Showing 1–49 of 49 results for author: Duesberg, G S

3D printing of hierarchical structures made of inorganic silicon-rich glass featuring self-forming nanogratings

Authors: Po-Han Huang, Shiqian Chen, Oliver Hartwig, David E. Marschner, Georg S. Duesberg, Göran Stemme, Jiantong Li, Kristinn B. Gylfason, Frank Niklaus

Abstract: Hierarchical structures are abundant in nature, such as in the superhydrophobic surfaces of lotus leaves and the structural coloration of butterfly wings. They consist of ordered features across multiple size scales, and their unique properties have attracted enormous interest in wide-ranging fields, including energy storage, nanofluidics, and nanophotonics. Femtosecond lasers, capable of inducing… ▽ More Hierarchical structures are abundant in nature, such as in the superhydrophobic surfaces of lotus leaves and the structural coloration of butterfly wings. They consist of ordered features across multiple size scales, and their unique properties have attracted enormous interest in wide-ranging fields, including energy storage, nanofluidics, and nanophotonics. Femtosecond lasers, capable of inducing various material modifications, have shown promise for manufacturing tailored hierarchical structures. However, existing methods such as multiphoton lithography and 3D printing using nanoparticle-filled inks typically involve polymers and suffer from high process complexity. Here, we demonstrate 3D printing of hierarchical structures in inorganic silicon-rich glass featuring self-forming nanogratings. This approach takes advantage of our finding that femtosecond laser pulses can induce simultaneous multiphoton crosslinking and self-formation of nanogratings in hydrogen silsesquioxane (HSQ). The 3D printing process combines the 3D patterning capability of multiphoton lithography and the efficient generation of periodic structures by the self-formation of nanogratings. We 3D-printed micro-supercapacitors with large surface areas and a remarkable areal capacitance of 1 mF/cm^2 at an ultrahigh scan rate of 50 V/s, thereby demonstrating the utility of our 3D printing approach for device applications in emerging fields such as energy storage. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Authors: Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel, Ke Ran, Sebastian Lukas, Enrique G. Marín, Oliver Hartwig, Maximilian Prechtl, Thorsten Wahlbrink, Joachim Mayer, Georg S. Duesberg, Andrés Godoy, Alwin Daus, Max C. Lemme

Abstract: Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult… ▽ More Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 30 pages

Graphene thermal infrared emitters integrated into silicon photonic waveguides

Authors: Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schroeder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Georg S. Duesberg, Frank Niklaus, Kristinn B. Gylfason, Max C. Lemme

Abstract: Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desi… ▽ More Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desired modes of the PIC waveguides via near-field coupling and would be stable at very high temperatures. Graphene is a semi-metallic two-dimensional material with comparable emissivity to thin metallic thermal emitters. It allows maximum coupling into waveguides by placing it directly into their evanescent fields. Here, we demonstrate graphene mid-IR emitters integrated with photonic waveguides that couple directly into the fundamental mode of silicon waveguides designed for a wavelength of 4,2 μm relevant for CO${_2}$ sensing. High broadband emission intensity is observed at the waveguide-integrated graphene emitter. The emission at the output grating couplers confirms successful coupling into the waveguide mode. Thermal simulations predict emitter temperatures up to 1000°C, where the blackbody radiation covers the mid-IR region. A coupling efficiency η, defined as the light emitted into the waveguide divided by the total emission, of up to 68% is estimated, superior to data published for other waveguide-integrated emitters. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: 24 pages

Metal-Organic Chemical Vapor Deposition of PtSe2

Authors: Maximilian Prechtl, Marc Busch, Oliver Hartwig, Kangho Lee, Tanja Stimpel-Lindner, Cormac Ó Coileáin, Kuanysh Zhussupbekov, Ainur Zhussupbekova, Samuel Berman, Igor V. Shvets, Georg S. Duesberg

Abstract: Platinum diselenide (PtSe2), a novel two-dimensional material from the class of noble-metal dichalcogenide (NMD), has recently received significant attention due to its outstanding properties. PtSe2, which undergoes a semi metallic to semiconductor transition when thinned, offers a band-gap in the infrared range and good air stability. These properties make it a prime active material in optoelectr… ▽ More Platinum diselenide (PtSe2), a novel two-dimensional material from the class of noble-metal dichalcogenide (NMD), has recently received significant attention due to its outstanding properties. PtSe2, which undergoes a semi metallic to semiconductor transition when thinned, offers a band-gap in the infrared range and good air stability. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, a synthesis method that can produce large-scale and reliable high quality PtSe2 is highly sought after. Here, we present PtSe2 growth by metal organic chemical vapor deposition. Films were grown on a variety of centimeter scale substrates and were characterized by Raman, X-ray photoelectron and X-ray diffraction spectroscopy, as well as scanning tunneling microscopy and spectroscopy. Domains within the films are found to be up to several hundred nanometers in size, and atomic scale measurements show their highly ordered crystalline structure. The thickness of homogenous films can be controlled via the growth time. This work provides fundamental guidance for the synthesis and implementation of high quality, large-scale PtSe2 layers, hence offering the key requirement for the implementation of PtSe2 in future electronic devices. △ Less

Submitted 2 February, 2023; v1 submitted 31 January, 2023; originally announced January 2023.

Comments: 20 Pages, 6 Figures. Main Manuscript (3 Figures, 14 pages) and Supporting Information (3 Figures, 6 pages) in one document

Post-Synthetic Treatment of Nickel-Iron Layered Double Hydroxides for the Optimum Catalysis of the Oxygen Evolution Reaction

Authors: Daire Tyndall, Sonia Jaskaniec, Brian Shortall, Ahin Roy, Lee Gannon, Katie ONeill, Michelle P. Browne, Joao Coelho, Cormac McGuinness, Georg S. Duesberg, Valeria Nicolosi

Abstract: Nickel-iron layered double hydroxide (NiFe LDH) platelets with high morphological regularity and sub-micrometre lateral dimensions were synthesized using a homogeneous precipitation technique for highly efficient catalysis of the oxygen evolution reaction (OER). Considering edge sites are the point of activity, efforts were made to control platelet size within the synthesized dispersions. The goal… ▽ More Nickel-iron layered double hydroxide (NiFe LDH) platelets with high morphological regularity and sub-micrometre lateral dimensions were synthesized using a homogeneous precipitation technique for highly efficient catalysis of the oxygen evolution reaction (OER). Considering edge sites are the point of activity, efforts were made to control platelet size within the synthesized dispersions. The goal is to controllably isolate and characterize size-reduced NiFe LDH particles. Synthetic approaches for size control of NiFe LDH platelets have not been transferable based on published work with other LDH materials and for that reason, we instead use post-synthetic treatment techniques to improve edge-site density. In the end, size reduced NiFe LDH/single-wall carbon nanotube (SWCNT) composites allowed to further reduce the OER overpotential to 237 plus/minus 7 mV ( L = 0.16 plus/minus 0.01 micrometres, 20 wt% SWCNT), which is one of the best values reported to date. This approach as well improved the long term activity of the catalyst in operating conditions. △ Less

Submitted 21 December, 2022; originally announced December 2022.

Journal ref: npj 2D Mater Appl 5, 73 (2021)

Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Authors: Shayan Parhizkar, Maximilian Prechtl, Anna Lena Giesecke, Stephan Suckow, Sophia Wahl, Sebastian Lukas, Oliver Hartwig, Nour Negm, Arne Quellmalz, Kristinn B. Gylfason, Daniel Schall, Matthias Wuttig, Georg S. Duesberg, Max C. Lemme

Abstract: Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PD… ▽ More Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $μ$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $μ$m to 28 $μ$m indicates the suitability of PtSe$_2$ for PDs far into the infrared wavelength range. Our PtSe$_2$ PDs integrated by direct growth outperform PtSe$_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe$_2$ an attractive 2D material for optoelectronics and PICs. △ Less

Submitted 21 March, 2022; v1 submitted 17 October, 2021; originally announced October 2021.

Comments: 23 pages, 4 figures

Journal ref: ACS Photonics, 9, 859-867, 2022

Synthesis and thermal stability of TMD thin films: A comprehensive XPS and Raman study

Authors: Conor P. Cullen, Oliver Hartwig, Cormac Ó Coileáin, John B. McManus, Lisanne Peters, Cansu Ilhan, Georg S. Duesberg, Niall McEvoy

Abstract: Transition metal dichalcogenides (TMDs) have been a core constituent of 2D material research throughout the last decade. Over this time, research focus has progressively shifted from synthesis and fundamental investigations, to exploring their properties for applied research such as electrochemical applications and integration in electrical devices. Due to the rapid pace of development, priority i… ▽ More Transition metal dichalcogenides (TMDs) have been a core constituent of 2D material research throughout the last decade. Over this time, research focus has progressively shifted from synthesis and fundamental investigations, to exploring their properties for applied research such as electrochemical applications and integration in electrical devices. Due to the rapid pace of development, priority is often given to application-oriented aspects while careful characterisation and analysis of the TMD materials themselves is occasionally neglected. This can be particularly evident for characterisations involving X-ray photoelectron spectroscopy (XPS), where measurement, peak-fitting, and analysis can be complex and nuanced endeavours requiring specific expertise. To improve the availability and accessibility of reference information, here we present a detailed peak-fitted XPS analysis of ten transition metal chalcogenides. The materials were synthesised as large-area thin-films on SiO2 using direct chalcogenisation of pre-deposited metal films. Alongside XPS, the Raman spectra with several excitation wavelengths for each material are also provided. These complementary characterisation methods can provide a more complete understanding of the composition and quality of the material. As material stability is a crucial factor when considering applications, the in-air thermal stability of the TMDs was investigated after several annealing points up to 400 °C. This delivers a trend of evolving XPS and Raman spectra for each material which improves interpretation of their spectra while also indicating their ambient thermal limits. This provides an accessible library and set of guidelines to characterise, compare, and discuss TMD XPS and Raman spectra. △ Less

Submitted 14 June, 2021; originally announced June 2021.

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Authors: Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Giovanna Capraro, Jens Bolten, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Satender Kataria, Georg S. Duesberg, Max C. Lemme

Abstract: Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermal… ▽ More Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications. △ Less

Submitted 8 April, 2021; originally announced April 2021.

Journal ref: Advanced Functional Material, 2102929, 2021

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Authors: Conor P. Cullen, Cormac Ó Coileáin, John B. McManus, Oliver Hartwig, David McCloskey, Georg S. Duesberg, Niall McEvoy

Abstract: Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility and strong layer-dependent bandgap, it has proven to be one of the more difficult TMDs to synthesise. In contrast to most TMDs, Pt has a significantly more stable… ▽ More Group-10 transition metal dichalcogenides (TMDs) are rising in prominence within the highly innovative field of 2D materials. While PtS2 has been investigated for potential electronic applications, due to its high charge-carrier mobility and strong layer-dependent bandgap, it has proven to be one of the more difficult TMDs to synthesise. In contrast to most TMDs, Pt has a significantly more stable monosulfide, the non-layered PtS. The existence of two stable platinum sulfides, sometimes within the same sample, has resulted in much confusion between the materials in the literature. Neither of these Pt sulfides have been thoroughly characterised as-of-yet. Here we utilise time-efficient, scalable methods to synthesise high-quality thin films of both Pt sulfides on a variety of substrates. The competing nature of the sulfides and limited thermal stability of these materials is demonstrated. We report peak-fitted X-ray photoelectron spectra, and Raman spectra using a variety of laser wavelengths, for both materials. This systematic characterisation provides a guide to differentiate between the sulfides using relatively simple methods which is essential to enable future work on these interesting materials. △ Less

Submitted 31 March, 2021; originally announced April 2021.

Slippery Polymer Monoliths: Surface Functionalization with Ordered MoS2 Microparticle Arrays

Authors: Weijia Han, Siwei Luo, Dirk Bröker, Norbert Vennemann, Markus Haase, Georg S. Duesberg, Martin Steinhart

Abstract: Components of technical systems and devices often require self-lubricating properties, which are implemented by means of dry lubricants. However, continuous lubricant coatings on the components' surfaces often suffer from poor adhesion, delamination and crack propagation. The replacement of continuous coatings with dense ordered arrays of microparticles consisting of dry lubricants may overcome th… ▽ More Components of technical systems and devices often require self-lubricating properties, which are implemented by means of dry lubricants. However, continuous lubricant coatings on the components' surfaces often suffer from poor adhesion, delamination and crack propagation. The replacement of continuous coatings with dense ordered arrays of microparticles consisting of dry lubricants may overcome these drawbacks. Using the well-established solid lubricant MoS2 as model system, we demonstrate that the sliding capability of polymeric monoliths can be significantly enhanced by integration of arrays of micron-sized dry lubricant microparticles into their contact surfaces. To synthesize the MoS2 microparticle arrays, we first prepared ordered hexagonal arrays of ammonium tetrathiomolybdate (ATM) microparticles on Si wafers by molding against poly(dimethylsiloxane) templates followed by high-temperature conversion of the ATM microparticles into MoS2 microparticles under Ar/H2 atmosphere in the presence of elemental sulfur. Finally, the obtained large-scale hexagonal MoS2 microparticle arrays were transferred to the surfaces of polymer monoliths under conservation of the array ordering. Self-lubrication of components of technical systems by incorporation of dry lubricant microparticle arrays into their contact surfaces is an example for overcoming the drawbacks of continuous functional coatings by replacing them with microparticle arrays. △ Less

Submitted 2 March, 2021; originally announced March 2021.

Comments: In press

Journal ref: Colloids and Surfaces A: Physicochemical and Engineering Aspects 2021

Nanoelectromechanical Sensors based on Suspended 2D Materials

Authors: Max C. Lemme, Stefan Wagner, Kangho Lee, Xuge Fan, Gerard J. Verbiest, Sebastian Wittmann, Sebastian Lukas, Robin J. Dolleman, Frank Niklaus, Herre S. J. van der Zant, Georg S. Duesberg, Peter G. Steeneken

Abstract: The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different… ▽ More The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Comments: Review paper

Journal ref: Research, vol. 2020, Article ID 8748602

Spectroscopic thickness and quality metrics for PtSe$_2$ layers produced by top-down and bottom-up techniques

Authors: Beata M. Szydłowska, Oliver Hartwig, Bartlomiej Tywoniuk, Tomáš Hartman, Tanja Stimpel-Lindner, Zdeněk Sofer, Niall McEvoy, Georg S. Duesberg, Claudia Backes

Abstract: Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material of varying quality and layer number. However, to… ▽ More Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material of varying quality and layer number. However, to date, no reliable high-throughput characterization to assess layer number exists. Here, we use top-down liquid phase exfoliation (LPE) coupled with centrifugation to produce widely basal plane defect-free PtSe$_2$ nanosheets of varying sizes and thicknesses. Quantification of the lateral dimensions by statistical atomic force microscopy allows us to quantitatively link information contained in optical spectra to the dimensions. For LPE nanosheets we establish metrics for lateral size and layer number based on extinction spectroscopy. Further, we compare the Raman spectroscopic response of LPE nanosheets with micromechanically exfoliated PtSe$_2$, as well as thin films produced by a range of bottom up techniques. We demonstrate that the Eg1 peak position and the intensity ratio of the Eg1/ A1g1 peaks can serve as robust metric for layer number across all sample types and will be of importance in future benchmarking of PtSe$_2$ films. △ Less

Submitted 9 June, 2020; v1 submitted 7 June, 2020; originally announced June 2020.

Comments: 20 pages, 3 figures

Three-dimensional printing of silica-glass structures with submicrometric features

Authors: Miku Laakso, Po-Han Huang, Pierre Edinger, Oliver Hartwig, Georg S. Duesberg, Carlos Errando-Herranz, Göran Stemme, Kristinn B. Gylfason, Frank Niklaus

Abstract: Humanity's interest in manufacturing silica-glass objects extends back over three thousand years. Silica glass is resistant to heating and exposure to many chemicals, and it is transparent in a wide wavelength range. Due to these qualities, silica glass is used for a variety of applications that shape our modern life, such as optical fibers in medicine and telecommunications. However, its chemical… ▽ More Humanity's interest in manufacturing silica-glass objects extends back over three thousand years. Silica glass is resistant to heating and exposure to many chemicals, and it is transparent in a wide wavelength range. Due to these qualities, silica glass is used for a variety of applications that shape our modern life, such as optical fibers in medicine and telecommunications. However, its chemical stability and brittleness impede the structuring of silica glass, especially on the small scale. Techniques for three-dimensional (3D) printing of silica glass, such as stereolithography and direct ink writing, have recently been demonstrated, but the achievable minimum feature size is several tens of micrometers. While submicrometric silica-glass structures have many interesting applications, for example in micro-optics, they are currently manufactured using lithography techniques, which severely limits the 3D shapes that can be realized. Here, we show 3D printing of optically transparent silica-glass structures with submicrometric features. We achieve this by cross-linking hydrogen silsesquioxane to silica glass using nonlinear absorption of laser light followed by the dissolution of the unexposed material. We print a functional microtoroid resonator with out-of-plane fiber couplers to demonstrate the new possibilities for designing and building silica-glass microdevices in 3D. △ Less

Submitted 14 May, 2020; originally announced May 2020.

Comments: 13 pages, 4 main figures, 6 extended data figures, 1 extended data table

Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants

Authors: John B. Mc Manus, Cansu Ilhan, Bastien Balsamo, Clive Downing, Conor P. Cullen, Tanja Stimpfel-Lidner, Graeme Cunningham, Lisanne Peters, Lewys Jones, Daragh Mullarkey, Igor V. Shvets, Georg S. Duesberg, Niall McEvoy

Abstract: Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically-exfoliated flakes from chemical vapour transport (CVT) grown cry… ▽ More Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically-exfoliated flakes from chemical vapour transport (CVT) grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis times, high-temperature anneals and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 degC. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by TEM and show promising initial electrical results. △ Less

Submitted 24 April, 2020; originally announced April 2020.

Defect Engineering of Two-dimensional Molybdenum Disulfide

Authors: Xin Chen, Peter Denninger, Tanja Stimpel-Lindner, Erdmann Spiecker, Georg S. Duesberg, Claudia Backes, Kathrin C. Knirsch, Andreas Hirsch

Abstract: Two-dimensional (2D) molybdenum disulfide (MoS2) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS2 nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS2 using thiols has emerged as one of the key stra… ▽ More Two-dimensional (2D) molybdenum disulfide (MoS2) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS2 nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS2 using thiols has emerged as one of the key strategies for engineering defects. Herein, we demonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS2 nanosheets using a series of substituted thiophenols in solution. The degree of functionalization can be tuned by varying the electron withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A1g peak strongly correlates to the degree of functionalization. Our results provide a spectroscopic indicator to monitor and quantify the defect engineering process. This method of MoS2 defect functionalization in solution also benefits the further exploration of defect free MoS2 for a wide range of applications. △ Less

Submitted 18 April, 2020; originally announced April 2020.

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Authors: John B. Mc Manus, Dominik V. Horvath, Michelle P. Browne, Conor P. Cullen, Graeme Cunningham, Toby Hallam, Kuanysh Zhussupbekov, Daragh Mullarkey, Cormac Ó Coileáin, Igor V. Shvets, Martin Pumera, Georg S. Duesberg, Niall McEvoy

Abstract: The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. O… ▽ More The synthesis of transition metal dichalcogenides (TMDs) has been a primary focus for 2D nanomaterial research over the last 10 years, however, only a small fraction of this research has been concentrated on transition metal ditellurides. In particular, nanoscale platinum ditelluride (PtTe2) has rarely been investigated, despite its potential applications in catalysis, photonics and spintronics. Of the reports published, the majority examine mechanically-exfoliated flakes from chemical vapor transport (CVT) grown crystals. While this production method is ideal for fundamental studies, it is very resource intensive therefore rendering this process unsuitable for large scale applications. In this report, the synthesis of thin films of PtTe2 through the reaction of solid-phase precursor films is described. This offers a production method for large-area, thickness-controlled PtTe2, suitable for a range of applications. These polycrystalline PtTe2 films were grown at temperatures as low as 450 degC, significantly below the typical temperatures used in the CVT synthesis methods. To investigate their potential applicability, these films were examined as electrocatalysts for the hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR). The films showed promising catalytic behavior, however, the PtTe2 was found to undergo chemical transformation to a substoichiometric chalcogenide compound under ORR conditions. This study shows while PtTe2 is stable and highly useful for HER, this property does not apply to ORR, which undergoes a fundamentally different mechanism. This study broadens our knowledge of the electrocatalysis of TMDs. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Investigation of Growth-Induced Strain in Monolayer MoS2 Grown by Chemical Vapor Deposition

Authors: Siwei Luo, Conor P. Cullen, Gencai Guo, Jianxin Zhong, Georg S. Duesberg

Abstract: Two-dimensional materials such as transitional metal dichalcogenides exhibit unique optical and electrical properties. Here we report on the varying optical properties of CVD grown MoS2 monolayer flakes with different shapes. In particular, it is observed that the perimeter and the central region of the flakes have non-uniform photoluminescence (PL) energy and intensity. We quantified these effect… ▽ More Two-dimensional materials such as transitional metal dichalcogenides exhibit unique optical and electrical properties. Here we report on the varying optical properties of CVD grown MoS2 monolayer flakes with different shapes. In particular, it is observed that the perimeter and the central region of the flakes have non-uniform photoluminescence (PL) energy and intensity. We quantified these effects systematically and propose that thermally induced strain during growth is the origin. The strain relaxation after transfer of the MoS2 flakes supports this explanation. Detailed investigations of the spatial distribution of the PL energy reveal that depending on the shape of the MoS2 flakes, the width of the strain field is different. Thus, our results help to elucidate the fundamental mechanisms responsible for the differences in PL and Raman signals between the perimeter region and the center region of monolayer MoS2 and suggest that the induced strain plays an important role in the growth of monolayer materials. △ Less

Submitted 22 December, 2019; originally announced December 2019.

Few-Layer MoS$_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection

Authors: Andreas Bablich, Daniel S. Schneider, Paul Kienitz, Satender Kataria, Stefan Wagner, Chanyoung Yim, Niall McEvoy, Olof Engstrom, Julian Müller, Yilmaz Sakalli, Benjamin Butz, Georg S. Duesberg, Peter Haring Bolívar, Max C. Lemme

Abstract: Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms… ▽ More Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS$_2$. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin photodetectors in the infrared range (IR, $λ$ = 2120 nm) in terms of sensitivities by up to 50 mAW$^{-1}$. Photodetectivities of up to 2 x 10$^{10}$ Jones and external quantum efficiencies of 3 % are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step towards pixelated and wavelength-selective sensors operating in the IR spectral range. △ Less

Submitted 22 July, 2019; originally announced July 2019.

Journal ref: ACS Photonics 6 (6), 1372-1378, 2019

Perforating freestanding molybdenum disulfide monolayers with highly charged ions

Authors: Roland Kozubek, Mukesh Tripathi, Mahdi Ghorbani-Asl, Silvan Kretschmer, Lukas Madauß, Erik Pollmann, Maria O'Brien, Niall McEvoy, Ursula Ludacka, Toma Susi, Georg S. Duesberg, Richard A. Wilhelm, Arkady V. Krasheninnikov, Jani Kotakoski, Marika Schleberger

Abstract: Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to… ▽ More Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Comments: 22 pages, 4 figures

Journal ref: J. Phys. Chem. Lett. 10, 5, 904-910 (2019)

Defect-Moderated Oxidative Etching of MoS2

Authors: Pierce Maguire, Jakub Jadwiszczak, Maria O'Brien, Darragh Keane, Georg S. Duesberg, Niall McEvoy, Hongzhou Zhang

Abstract: We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining mat… ▽ More We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion microscope. Raman spectroscopy, optical microscopy and scanning electron microscopy were used to characterize both the etched features and the remaining material. It has been found that by using a pre-treatment to introduce defects, MoS$_2$ can be etched very efficiently and with high region specificity by heating in air. △ Less

Submitted 11 June, 2019; originally announced June 2019.

Comments: 8 pages, 6 figures

PtSe2 grown directly on polymer foil for use as a robust piezoresistive sensor

Authors: Conor S. Boland, Cormac Ó Coileáin, Stefan Wagner, John B. McManus, Conor P. Cullen, Max C. Lemme, Georg S. Duesberg, Niall McEvoy

Abstract: Robust strain gauges are fabricated by growing PtSe2 layers directly on top of flexible polyimide foils. These PtSe2 layers are grown by low-temperature, thermally-assisted conversion of predeposited Pt layers. Under applied flexure the PtSe2 layers show a decrease in electrical resistance signifying a negative gauge factor. The influence of the growth temperature and film thickness on the electro… ▽ More Robust strain gauges are fabricated by growing PtSe2 layers directly on top of flexible polyimide foils. These PtSe2 layers are grown by low-temperature, thermally-assisted conversion of predeposited Pt layers. Under applied flexure the PtSe2 layers show a decrease in electrical resistance signifying a negative gauge factor. The influence of the growth temperature and film thickness on the electromechanical properties of the PtSe2 layers is investigated. The best-performing strain gauges fabricated have a superior gauge factor to that of commercial metal-based strain gauges. Notably, the strain gauges offer good cyclability and are very robust, surviving repeated peel tests and immersion in water. Furthermore, preliminary results indicate that the stain gauges also show potential for high-frequency operation. This host of advantageous properties, combined with the possibility of further optimization and channel patterning, indicate that PtSe2 grown directly on polyimide holds great promise for future applications. △ Less

Submitted 28 March, 2019; originally announced March 2019.

Photoresponsivity enhancement in monolayer MoS$_2$ by rapid O$_2$:Ar plasma treatment

Authors: Jakub Jadwiszczak, Gen Li, Conor P. Cullen, **g **g Wang, Pierce Maguire, Georg S. Duesberg, James G. Lunney, Hongzhou Zhang

Abstract: We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL map** and discuss the role of MoO$_x$ in improving the photocurrent generation in our devices. At the highest tested laser power of 0.1 mW, we find ten-fold enhancements to both the output current an… ▽ More We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL map** and discuss the role of MoO$_x$ in improving the photocurrent generation in our devices. At the highest tested laser power of 0.1 mW, we find ten-fold enhancements to both the output current and carrier field-effect mobility under the illumination wavelength of 488 nm. We suggest that the improvement of electrical performance is due to the surface presence of MoO$_x$ resulting from the chemical conversion of MoS$_2$ by the oxygen-containing plasma. Our results highlight the beneficial role of plasma treatment as a fast and convenient way of improving the properties of synthetic 2D MoS$_2$ devices for future consideration in optoelectronics research. △ Less

Submitted 22 December, 2018; originally announced December 2018.

Comments: 6 pages, 5 figures

Suppression of the Shear Raman Mode in Defective Bilayer MoS2

Authors: Pierce Maguire, Clive Downing, Jakub Jadwiszczak, Maria O'Brien, Darragh Keane, John B. McManus, Georg S. Duesberg, Valeria Nicolosi, Niall McEvoy, Hongzhou Zhang

Abstract: We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by transmission electron microscopy. With increasing ion dose the shear mode is observed to redshift and it is also suppressed sharply compared to other… ▽ More We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by transmission electron microscopy. With increasing ion dose the shear mode is observed to redshift and it is also suppressed sharply compared to other Raman peaks. We use the linear chain model to describe the changes to the Raman spectra. Our observations suggest that crystallite size and orientation are the dominant factors behind the changes to the Raman spectra. △ Less

Submitted 14 December, 2018; v1 submitted 13 December, 2018; originally announced December 2018.

Comments: 5 pages, 4 figures in main paper + supplemental

Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation

Authors: Jakub Jadwiszczak, Darragh Keane, Pierce Maguire, Conor P. Cullen, Yangbo Zhou, Hua-Ding Song, Clive Downing, Daniel S. Fox, Niall McEvoy, Rui Zhu, Jun Xu, Georg S. Duesberg, Zhi-Min Liao, John J. Boland, Hongzhou Zhang

Abstract: Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monol… ▽ More Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monolayer single-crystal molybdenum disulfide (MoS2) utilising a focused helium ion beam. Site-specific irradiation with the probe of a helium ion microscope (HIM) allows for the creation of charged defects in the MoS2 lattice. The reversible drift of these locally seeded defects in the applied electric field modulates the resistance of the semiconducting channel, enabling versatile memristive functionality on the nanoscale. We find the device can reliably retain its resistance ratios and set biases for hundreds of switching cycles at sweep frequencies of up to 2.9 V/s with relatively low drain-source biases. We also demonstrate long-term potentiation and depression with sharp habituation that promises application in future neuromorphic architectures. This work advances the down-scaling progress of memristive devices without sacrificing key performance parameters such as power consumption or its applicability for synaptic emulation. △ Less

Submitted 23 November, 2018; originally announced November 2018.

Comments: 37 pages, 5 main figures, 14 supplementary figures

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

Authors: HyunJeong Kim WungYeon Kim, Maria O'Brien, Niall McEvoy, Chanyoung Yim, Mario Marcia, Frank Hauke, Andreas Hirsch, Gyu-Tae Kim, Georg S. Duesberg

Abstract: Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a perylene bisimide derivative to allow for the deposition of Al2O3 dielectric. This allowed the fabrication of top-gated, fully-encapsulated MoS2 FETs. Furthermore, by… ▽ More Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a perylene bisimide derivative to allow for the deposition of Al2O3 dielectric. This allowed the fabrication of top-gated, fully-encapsulated MoS2 FETs. Furthermore, by the definition of vertical contacts on MoS2, devices, in which the channel area was never exposed to polymers, were fabricated. The MoS2 FETs showed high mobilities for transistors fabricated on SiO2 with Al2O3 as top-gate dielectric. Thus, gate-stack engineering using innovative chemistry is a promising approach for the fabrication of reliable electronic devices based on 2D materials. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films

Authors: Stefan Wagner, Chanyoung Yim, Niall McEvoy, Satender Kataria, Volkan Yokaribas, Agnieszka Kuc, Stephan Pindl, Claus-Peter Fritzen, Thomas Heine, Georg S. Duesberg, Max C. Lemme

Abstract: Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the poten… ▽ More Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400°C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines. △ Less

Submitted 19 March, 2018; originally announced March 2018.

Comments: 33 pages, 5 figures, including supporting information with 10 figures

Journal ref: Nano Letters, 18, 3738-3745, 2018

Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials

Authors: Pierce Maguire, Daniel S. Fox, Yangbo Zhou, Qian** Wang, Maria O'Brien, Jakub Jadwiszczak, Conor P. Cullen, John McManus, Niall McEvoy, Georg S. Duesberg, Hongzhou Zhang

Abstract: Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He$^+$) and neon (Ne$^+$). A detailed study of the… ▽ More Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He$^+$) and neon (Ne$^+$). A detailed study of the introduced defect sizes and resulting inter-defect distance with escalating ion dose was performed using Raman spectroscopy. Expanding on existing models, we found that the average defect size is considerably smaller for supported than freestanding graphene and that the rate of defect production is larger. We conclude that secondary atoms from the substrate play a significant role in defect production, creating smaller defects relative to those created by the primary ion beam. Furthermore, a similar model was also applied to supported MoS$_2$, another promising member of the 2D material family. Defect yields for both ions were obtained for MoS$_2$, demonstrating their different interaction with the material and facilitating comparison with other irradiation conditions in the literature. △ Less

Submitted 17 April, 2018; v1 submitted 27 July, 2017; originally announced July 2017.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 98, 134109 (2018)

Electrical characterization of structured platinum diselenide devices

Authors: Chanyoung Yim, Vikram Passi, Max C. Lemme, Georg S. Duesberg, Cormac Ó Coileáin Emiliano Pallechi, Dalal Fadil, Niall McEvoy

Abstract: Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we add… ▽ More Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant potential for use in device applications. Notably, PtSe2 can be grown at low temperature making it potentially suitable for industrial usage. Here, we address thickness dependent transport properties and investigate electrical contacts to PtSe2, a crucial and universal element of TMD-based electronic devices. PtSe2 films have been synthesized at various thicknesses and structured to allow contact engineering and the accurate extraction of electrical properties. Contact resistivity and sheet resistance extracted from transmission line method (TLM) measurements are compared for different contact metals and different PtSe2 film thicknesses. Furthermore, the transition from semimetal to semiconductor in PtSe2 has been indirectly verified by electrical characterization of field-effect devices. Finally, the influence of edge contacts at the metal - PtSe2 interface has been studied by nanostructuring the contact area using electron beam lithography. By increasing the edge contact length, the contact resistivity was improved by up to 70% compared to devices with conventional top contacts. The results presented here represent crucial steps towards realizing high-performance nanoelectronic devices based on group-10 TMDs. △ Less

Submitted 21 July, 2017; originally announced July 2017.

Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition

Authors: Kenan Elibol, Toma Susi, Maria O'Brien, Bernhard C. Bayer, Timothy J. Pennycook, Niall McEvoy, Georg S. Duesberg, Jannik C. Meyer, Jani Kotakoski

Abstract: Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defe… ▽ More Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defect lines within CVD-grown 2D materials, their atomic structure is of paramount importance. Here, through atomic-scale analysis of micrometer-long GBs, we show that covalently bound boundaries in 2D MoS2 tend to be decorated by nanopores. Such boundaries occur when differently oriented MoS2 grains merge during growth, whereas the overlap of grains leads to boundaries with bilayer areas. Our results suggest that the nanopore formation is related to stress release in areas with a high concentration of dislocation cores at the grain boundaries, and that the interlayer interaction leads to intrinsic rippling at the overlap regions. This provides insights for the controlled fabrication of large-scale MoS 2 samples with desired structural properties for applications. △ Less

Submitted 22 December, 2016; originally announced December 2016.

Comments: 26 pages, including supplementary material

Journal ref: Nanoscale 9, 1591-1598 (2017)

High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature

Authors: Chanyoung Yim, Kangho Lee, Niall McEvoy, Maria O Brien, Sarah Riazimehr, Nina C. Berner, Conor P. Cullen, Jani Kotakoski, Jannik C. Meyer, Max C. Lemme, Georg S. Duesberg

Abstract: Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integr… ▽ More Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermal assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this novel material with silicon (Si) technology. Besides the thorough characterization of this new 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically-stacked heterostructures of PtSe2 on Si which act as both photodiodes and photovoltaic cells. Thus this study establishes PtSe2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies. △ Less

Submitted 28 September, 2016; v1 submitted 28 June, 2016; originally announced June 2016.

Raman Characterization of Platinum Diselenide Thin Films

Authors: Maria O'Brien, Niall McEvoy, Carlo Motta, Jian-Yao Zheng, Nina C. Berner, Jani Kotakoski, Kenan Elibol, Timothy J. Pennycook, Jannik C. Meyer, Chanyoung Yim, Mohamed Abid, Toby Hallam, John F. Donegan, Stefano Sanvito, Georg S. Duesberg

Abstract: Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film t… ▽ More Platinum diselenide (PtSe2) is a newly discovered 2D material which is of great interest for applications in electronics and catalysis. PtSe2 films were synthesized by thermally-assisted selenization of predeposited platinum films and scanning transmission electron microscopy revealed the crystal structure of these films to be 1T. Raman scattering of these films was studied as a function of film thickness, laser wavelength and laser polarization. Eg and A1g Raman active modes were identified using polarization measurements in the Raman setup. These modes were found to display a clear position and intensity dependence with film thickness, for multiple excitation wavelengths, and their peak positions agree with simulated phonon dispersion curves for PtSe2. These results highlight the practicality of using Raman spectroscopy as a prime characterization technique for newly-synthesized 2D materials. △ Less

Submitted 31 December, 2015; originally announced December 2015.

Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors

Authors: Sarah Riazimehr, Andreas Bablich, Daniel Schneider, Satender Kataria, Vikram Passi, Chanyoung Yim, Georg S. Duesberg, Max C. Lemme

Abstract: We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considera… ▽ More We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon photodiodes. △ Less

Submitted 3 September, 2015; originally announced September 2015.

Journal ref: Solid-State Electronics, 115, 207-212, 2016

Map** of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects

Authors: Maria OBrien, Niall McEvoy, Damien Hanlon, Toby Hallam, Jonathan N. Coleman, Georg S. Duesberg

Abstract: Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour depositi… ▽ More Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour deposition (CVD). Raman spectra are acquired over large areas allowing changes in the position and intensity of the shear and layer-breathing modes to be visualized in maps. This allows detailed characterization of mono- and few-layered TMDs which is complementary to well-established (high-frequency) Raman and photoluminescence spectroscopy. This study presents a major step** stone in fundamental understanding of layered materials as map** the low-frequency modes allows the quality, symmetry, stacking configuration and layer number of 2D materials to be probed over large areas. In addition, we report on anomalous resonance effects in the low-frequency region of the WS2 Raman spectrum. △ Less

Submitted 8 December, 2015; v1 submitted 4 August, 2015; originally announced August 2015.

Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene

Authors: Nina C. Berner, Sinéad Winters, Claudia Backes, Chanyoung Yim, Kim C. Dümbgen, Izabela Kaminska, Sebastian Mackowski, Attilio A. Cafolla, Andreas Hirsch, Georg S. Duesberg

Abstract: The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide deri… ▽ More The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide derivatives and related this to the amount of substrate contamination. We were able to directly observe wet-chemically deposited SAMs in scanning tunnelling microscopy (STM) on transferred CVD graphene and revealed that the densely packed perylene ad-layers adsorb with the conjugated π-system of the core perpendicular to the graphene substrate. This elucidation of the non-covalent functionalisation of graphene has major implications on controlling its surface chemistry and opens new pathways for adaptable functionalisation in ambient conditions and on the large scale. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: 27 pages (including SI), 10 figures

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Authors: Maria O'Brien, Niall McEvoy, Damien Hanlon, Kangho Lee, Riley Gatensby, Jonathan N. Coleman, Georg S. Duesberg

Abstract: Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as are methods to characterize material quality. Here we present the chemical vapor deposition of MoSe2 monolayer and few layer crystals. These results show the prac… ▽ More Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as are methods to characterize material quality. Here we present the chemical vapor deposition of MoSe2 monolayer and few layer crystals. These results show the practicality of using chemical vapor deposition to reliably fabricate these materials. Low frequency Raman spectra and map** of shear and layer breathing modes of MoSe2 are presented for the first time. We correlate the behavior of these modes with layer number in the materials. The usefulness of low frequency Raman map** to probe the symmetry, quality, and monolayer presence in CVD grown 2D materials is emphasized. △ Less

Submitted 9 May, 2015; originally announced May 2015.

Direct Observationof DegenerateTwo-Photon Absorption and Its Saturation in WS2 and MoS2 Monolayer and Few-Layer Films

Authors: Saifeng Zhang, Ningning Dong, Niall McEvoy, Maria O'Brien, Sinéad Winters, Nina C. Berner, Chanyoung Yim, Yuanxin Li, Xiaoyan Zhang, Zhanghai Chen, Long Zhang, Georg S. Duesberg, Jun Wang

Abstract: The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was investigated using the Z-scan technique with femtosecond pulses from the visible to the near infrared. The dependence of nonlinear absorption of the WS2 and MoS2 films on layer number and excitation wavelength was studied systematically. WS2 with 1~3 layers exhibits a giant two-photon absorption (TPA) coefficient. Saturation o… ▽ More The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was investigated using the Z-scan technique with femtosecond pulses from the visible to the near infrared. The dependence of nonlinear absorption of the WS2 and MoS2 films on layer number and excitation wavelength was studied systematically. WS2 with 1~3 layers exhibits a giant two-photon absorption (TPA) coefficient. Saturation of TPA for WS2 with 1~3 layers and MoS2 with 25~27 layers was observed. The giant nonlinearity of WS2 and MoS2 is attributed to two dimensional confinement, a giant exciton effect and the band edge resonance of TPA. △ Less

Submitted 9 October, 2015; v1 submitted 8 March, 2015; originally announced March 2015.

Journal ref: ACS Nano 9 (7), 7142 - 7150 (2015)

Liquid exfoliation of solvent-stabilised black phosphorus: applications beyond electronics

Authors: Damien Hanlon, Claudia Backes, Evie Doherty, Clotilde S. Cucinotta, Nina C. Berner, Conor Boland, Kangho Lee, Peter Lynch, Zahra Gholamvand, Andrew Harvey, Saifeng Zhang, Kangpeng Wang, Glenn Moynihan, Anuj Pokle, Quentin M. Ramasse, Niall McEvoy, Werner J. Blau, Jun Wang, Stefano Sanvito, David D. ORegan, Georg S. Duesberg, Valeria Nicolosi, Jonathan N. Coleman

Abstract: Few layer black phosphorus is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of stability severely limits our ability to synthesise and process this material. Here we demonstrate that high-quality, few-layer black phosphorus nanosheets can be produced in large quantities by liquid phase exfoliation in the solvent N-cyclohexyl-2-… ▽ More Few layer black phosphorus is a new two-dimensional material which is of great interest for applications, mainly in electronics. However, its lack of stability severely limits our ability to synthesise and process this material. Here we demonstrate that high-quality, few-layer black phosphorus nanosheets can be produced in large quantities by liquid phase exfoliation in the solvent N-cyclohexyl-2-pyrrolidone (CHP). We can control nanosheet dimensions and have developed metrics to estimate both nanosheet size and thickness spectroscopically. When exfoliated in CHP, the nanosheets are remarkably stable unless water is intentionally introduced. Computational studies show the degradation to occur by reaction with water molecules only at the nanosheet edge, leading to the removal of phosphorus atoms and the formation of phosphine and phosphorous acid. We demonstrate that liquid exfoliated black phosphorus nanosheets are potentially useful in a range of applications from optical switches to gas sensors to fillers for composite reinforcement. △ Less

Submitted 8 January, 2015; originally announced January 2015.

Comments: 6 figures

Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$

Authors: Chanyoung Yim, Maria O`Brien, Niall McEvoy, Sarah Riazimehr, Heiko Schäfer-Eberwein, Andreas Bablich, Ravinder Pawar, Giuseppe Iannaccone, Clive Downing, Gianluca Fiori, Max C. Lemme, Georg S. Duesberg

Abstract: We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thicknes… ▽ More We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. △ Less

Submitted 1 July, 2014; originally announced July 2014.

Comments: 23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458)

Journal ref: Scientific Reports 4 (2014) 5458

Biocompatibility of Pristine Graphene Monolayers, Nanosheets and Thin Films

Authors: Jennifer Conroy, Navin K. Verma, Ronan J. Smith, Ehsan Rezvani, Georg S. Duesberg, Jonathan N. Coleman, Yuri Volkov

Abstract: There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic application… ▽ More There is an increasing interest to develop nanoscale biocompatible graphene structures due to their desirable physicochemical properties, unlimited application opportunities and scalable production. Here we report the preparation, characterization and biocompatibility assessment of novel graphene flakes and their enabled thin films suitable for a wide range of biomedical and electronic applications. Graphene flakes were synthesized by a chemical vapour deposition method or a liquid-phase exfoliation procedure and then thin films were prepared by transferring graphene onto glass coverslips. Raman spectroscopy and transmission electron microscopy confirmed a predominantly monolayer and a high crystalline quality formation of graphene. The biocompatibility assessment of graphene thin films and graphene flakes was performed using cultured human lung epithelial cell line A549 employing a multimodal approach incorporating automated imaging, high content screening, real-time impedance sensing in combination with biochemical assays. No detectable changes in the cellular morphology or attachment of A549 cells growing on graphene thin films or cells exposed to graphene flakes (0.1 to 5 ug/mL) for 4 to 72 h was observed. Graphene treatments caused a very low level of increase in cellular production of reactive oxygen species in A549 cells, but no detectable damage to the nuclei such as changes in morphology, condensation or fragmentation was observed. In contrast, carbon black proved to be significantly more toxic than the graphene. These data open up a promising view of using graphene enabled composites for a diverse scope of safer applications. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Origami-based spintronics in graphene

Authors: A. T. Costa, M. S. Ferreira, Toby Hallam, Georg S. Duesberg, A. H. Castro Neto

Abstract: We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results indicate that such origami-like structures can be used efficiently in spintronic applications. We show that periodically folded graphene sheets with enhanced spin-orbit interaction due to curvature effects can carry spin polarized currents and have gaps in the electronic spectrum in the presence of weak magnetic fields. Our results indicate that such origami-like structures can be used efficiently in spintronic applications. △ Less

Submitted 14 August, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Authors: Walter M. Weber, Georg S. Duesberg, Andrew P. Graham, Maik Liebau, Eugen Unger, Caroline Cheze, Lutz Geelhaar, Paolo Lugli, Henning Riechert, Franz Kreupl

Abstract: Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field… ▽ More Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si. △ Less

Submitted 13 September, 2006; originally announced September 2006.

Comments: accepted for publication in phys. stat. sol. (c)(C) (2006) WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Raman-modes of index-identified free-standing single-walled carbon nanotubes

Authors: Jannik C. Meyer, Matthieu Paillet, Thierry Michel, Alain Moreac, Anita Neumann, Georg S. Duesberg, Siegmar Roth, Jean-Louis Sauvajol

Abstract: Using electron diffraction on free-standing single-walled carbon nanotubes we have determined the structural indices (n,m) of tubes in the diameter range from 1.4 to 3nm. On the same free-standing tubes we have recorded Raman spectra of the tangential modes and the radial breathing mode. For the smaller diameters (1.4-1.7nm) these measurements confirm previously established radial breathing mode… ▽ More Using electron diffraction on free-standing single-walled carbon nanotubes we have determined the structural indices (n,m) of tubes in the diameter range from 1.4 to 3nm. On the same free-standing tubes we have recorded Raman spectra of the tangential modes and the radial breathing mode. For the smaller diameters (1.4-1.7nm) these measurements confirm previously established radial breathing mode frequency versus diameter relations, and would be consistent with the theoretically predicted proportionality to the inverse diameter. However, for extending the relation to larger diameters, either a yet unexplained environmental constant has to be assumed, or the linear relation has to be abandoned. △ Less

Submitted 24 June, 2005; originally announced June 2005.

Comments: 4 pages, 4 figures, +additional materials (select PostScript to obtain it)

Journal ref: Phys. Rev. Lett. 95, 217401 (2005)

Electron diffraction analysis of individual single-walled carbon nanotubes

Authors: Jannik C. Meyer, Matthieu Paillet, Georg S. Duesberg, Siegmar Roth

Abstract: We present a detailed electron diffraction study of individual single-walled carbon nanotubes. A novel sample preparation procedure provides well-separated, long and straight individual single-shell nanotubes. Diffraction experiments are carried out at 60kV, below the threshold for knock-on damage in carbon nanotubes. We describe experimental parameters that allow single-tube electron diffractio… ▽ More We present a detailed electron diffraction study of individual single-walled carbon nanotubes. A novel sample preparation procedure provides well-separated, long and straight individual single-shell nanotubes. Diffraction experiments are carried out at 60kV, below the threshold for knock-on damage in carbon nanotubes. We describe experimental parameters that allow single-tube electron diffraction experiments with widely available thermal emission transmission electron microscopes. Further, we review the simulation of diffraction patterns for these objects. △ Less

Submitted 14 August, 2005; v1 submitted 15 June, 2005; originally announced June 2005.

Comments: 10 pages, 10 figures. Ultramicroscopy (in press), 2005

Journal ref: Ultramicroscopy vol. 106 no. 3, pp. 176-190 (2006)

Lattice structure and vibrational properties of the same nano-object

Authors: Jannik C. Meyer, Matthieu Paillet, Jean-Lous Sauvajol, Georg S. Duesberg, Siegmar Roth

Abstract: We present a procedure for determining independently the lattice structure and the vibrational properties of the same individual nano-object. For the example of an individual single-walled carbon nanotube we demonstrate the determination of the structural indices (n,m) of the nanotube by electron diffraction and of the frequencies of vibrational modes by micro-Raman spectroscopy. The precise and… ▽ More We present a procedure for determining independently the lattice structure and the vibrational properties of the same individual nano-object. For the example of an individual single-walled carbon nanotube we demonstrate the determination of the structural indices (n,m) of the nanotube by electron diffraction and of the frequencies of vibrational modes by micro-Raman spectroscopy. The precise and independent determination of both structure and mode frequencies allows for direct and unambiguous verification of molecular dynamical calculations and of conclusions drawn from Raman-only experiments. △ Less

Submitted 17 January, 2005; v1 submitted 14 January, 2005; originally announced January 2005.

Comments: 3 pages, 3 figures

Carbon Nanotubes for Interconnect Applications

Authors: Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger

Abstract: We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8… ▽ More We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node, a current density of 5 10^8 A/cm^2 and a resistance of 7.8 kOhm could be achieved for a single multi-walled CNT vertical interconnect. △ Less

Submitted 20 December, 2004; originally announced December 2004.

Comments: 4 pages, 11 figures

Journal ref: IEDM Tech. Dig., pp. 683 - 686, December 2004

Sub 20 nm Short Channel Carbon Nanotube Transistors

Authors: R. V. Seidel, A. P. Graham, J. Kretz, B. Rajasekharan, G. S. Duesberg, M. Liebau, E. Unger, F. Kreupl, W. Hoenlein

Abstract: Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and P… ▽ More Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt. △ Less

Submitted 7 November, 2004; originally announced November 2004.

Comments: Nano Letters in press

Microelectronic interconnects based on carbon nanotubes

Authors: Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger

Abstract: Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration. Carbon nanotubes have emerged as a possible new material for electronic applications. They show promising characteristics for transistors as well as for interconnects. Here we review their basic properties and focus on the status of nanotubes with respect to their application as interconnects and discuss the challenges facing their integration. △ Less

Submitted 25 October, 2004; originally announced October 2004.

Comments: to appear in MRS proceedings of AMC 2004 (San Diego)

Carbon Nanotubes in Microelectronic Applications

Authors: F. Kreupl, G. S. Duesberg, A. P. Graham, M. Liebau, E. Unger, R. Seidel, W. Pamler, W. Hoenlein

Abstract: Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelec… ▽ More Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes, specify the applications, where nanotubes can contribute to the advancement of Moore's law and show our progress of nanotube process integration in a microelectronic compatible way. The growth of single individual nanotubes at lithographically defined locations on whole wafers as a key requirement for the successful implementation of nanotubes is shown. In terms of nanotube transistors we propose a vertical nanotube transistor concept which outperforms the ITRS requirements for the year 2016. The performance is mainly limited by contact resistances, but by comparison with silicon devices we show that fabricated nanotube transistors already today exceed the values for transconductance, on-resistance and drive current of silicon devices. △ Less

Submitted 14 October, 2004; originally announced October 2004.

Comments: published in: Physics, Chemistry and Applications of Nanostructures, Reviews and Short Notes to Nanomeeting 2003, V. E. Borisenko, S. V. Gaponenko, V. S. Gurin (Eds.), World Scientific (2003), pp. 525-532

Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes

Authors: R. V. Seidel, A. P. Graham, B. Rajasekharan, E. Unger, M. Liebau, G. S. Duesberg, F. Kreupl, W. Hoenlein

Abstract: The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almo… ▽ More The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs. △ Less

Submitted 13 October, 2004; originally announced October 2004.

Comments: submitted to Journal of Applied Physics