Ion-Beam Modification of Metastable Gallium Oxide Polymorphs
Authors:
D. I. Tetelbaum,
A. A. Nikolskaya,
D. S. Korolev,
A. I. Belov,
V. N. Trushin,
Yu. A. Dudin,
A. N. Mikhaylov,
A. I. Pechnikov,
M. P. Scheglov,
V. I. Nikolaev,
D. Gogova
Abstract:
Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of i…
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Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion do**, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient do** strategies.
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Submitted 27 February, 2021;
originally announced March 2021.
Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
I. N. Antonov,
R. N. Kriukov,
S. Yu. Zubkov,
D. E. Nikolichev,
A. A. Konakov,
Yu. A. Dudin,
Yu. M. Kuznetsov,
N. A. Sobolev,
M. P. Temiryazeva
Abstract:
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depen…
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The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.
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Submitted 20 February, 2019; v1 submitted 9 February, 2019;
originally announced February 2019.
