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Extended defects as a source of phonon confinement in polycrystalline Si and Ge films
Authors:
Larisa V. Arapkina,
Kirill V. Chizh,
Oleg V. Uvarov,
Valery V. Voronov,
Vladimir P. Dubkov,
Mikhail S. Storozhevykh,
Maksim V. Poliakov,
Lidiya S. Volkova,
Polina A. Edelbekova,
Alexey A. Klimenko,
Alexander A. Dudin,
Vladimir A. Yuryev
Abstract:
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in…
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We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in the main vibrational bands of TO(c-Si) and TO(c-Ge) phonons, respectively. It is shown that these peaks correspond to scattering in grain boundary area. For the poly-Si films, both a downward shift and an asymmetrical broadening of the vibrational band of TO(c-Si) near 520 cm$^{-1}$ are observed, whereas there is only a symmetric broadening in the spectra of poly-Ge. The Raman line shape has been modeled within the framework of the phonon confinement theory taking into account the sizes of coherent scattering domains obtained using XRD. The model includes a symmetrical band broadening observed in polycrystalline films. It is shown that confinement of phonon propagation might be in the poly-Si films. The phonon dispersion and the density of phonon states have been simulated using density functional theory. It has been found that phonon confinement relates to grain boundaries rather than other extended defects such as twins (multiple twins, twin boundaries), the appearance of which does not lead to significant changes in phonon dispersion and density of phonon states.
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Submitted 7 February, 2024;
originally announced March 2024.
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Designing an attack-defense game: how to increase robustness of financial transaction models via a competition
Authors:
Alexey Zaytsev,
Alex Natekin,
Evgeni Vorsin,
Valerii Smirnov,
Georgii Smirnov,
Oleg Sidorshin,
Alexander Senin,
Alexander Dudin,
Dmitry Berestnev
Abstract:
Given the escalating risks of malicious attacks in the finance sector and the consequential severe damage, a thorough understanding of adversarial strategies and robust defense mechanisms for machine learning models is critical. The threat becomes even more severe with the increased adoption in banks more accurate, but potentially fragile neural networks. We aim to investigate the current state an…
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Given the escalating risks of malicious attacks in the finance sector and the consequential severe damage, a thorough understanding of adversarial strategies and robust defense mechanisms for machine learning models is critical. The threat becomes even more severe with the increased adoption in banks more accurate, but potentially fragile neural networks. We aim to investigate the current state and dynamics of adversarial attacks and defenses for neural network models that use sequential financial data as the input.
To achieve this goal, we have designed a competition that allows realistic and detailed investigation of problems in modern financial transaction data. The participants compete directly against each other, so possible attacks and defenses are examined in close-to-real-life conditions. Our main contributions are the analysis of the competition dynamics that answers the questions on how important it is to conceal a model from malicious users, how long does it take to break it, and what techniques one should use to make it more robust, and introduction additional way to attack models or increase their robustness.
Our analysis continues with a meta-study on the used approaches with their power, numerical experiments, and accompanied ablations studies. We show that the developed attacks and defenses outperform existing alternatives from the literature while being practical in terms of execution, proving the validity of the competition as a tool for uncovering vulnerabilities of machine learning models and mitigating them in various domains.
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Submitted 23 August, 2023; v1 submitted 22 August, 2023;
originally announced August 2023.
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Influence of the thickness of Si and Ge films deposited on Si$_3$N$_4$/SiO$_2$/Si substrates on their structure and diffusion of hydrogen atoms from Si$_3$N$_4$ layers
Authors:
Larisa V. Arapkina,
Kirill V. Chizh,
Dmitry B. Stavrovskii,
Alexey A. Klimenko,
Alexander A. Dudin,
Vladimir P. Dubkov,
Mikhail S. Storozhevykh,
Vladimir A. Yuryev
Abstract:
The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium fi…
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The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium films. The thicker was the deposited film, the more considerable were the decrease of N$-$H absorption band intensity and the increase in that of the Si$-$N band. This tendency has been observed during the growth of both amorphous and polycrystalline Si or Ge films. The reduction of IR absorption at the band assigned to the N$-$H bond vibration is explained by breaking of these bonds followed by the diffusion of the hydrogen atoms from the Si$_3$N$_4$ layer into the growing film of silicon or germanium. The effect of the deposited film thickness on the diffusion of hydrogen is discussed within a model of the diffusion of hydrogen atoms controlled by the difference in chemical potentials of hydrogen atoms in the dielectric Si$_3$N$_4$ layer and the growing silicon or germanium film. Hydrogen atoms escape from the Si$_3$N$_4$ layer only during the deposition of a Si or Ge film when its thickness gradually grows. The interruption of the film growth stops the migration of hydrogen atoms into the film because of the decline in the chemical potential difference.
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Submitted 29 December, 2021;
originally announced January 2022.
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Ion-Beam Modification of Metastable Gallium Oxide Polymorphs
Authors:
D. I. Tetelbaum,
A. A. Nikolskaya,
D. S. Korolev,
A. I. Belov,
V. N. Trushin,
Yu. A. Dudin,
A. N. Mikhaylov,
A. I. Pechnikov,
M. P. Scheglov,
V. I. Nikolaev,
D. Gogova
Abstract:
Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of i…
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Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion do**, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient do** strategies.
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Submitted 27 February, 2021;
originally announced March 2021.
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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
Authors:
A. V. Kudrin,
V. P. Lesnikov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
I. N. Antonov,
R. N. Kriukov,
S. Yu. Zubkov,
D. E. Nikolichev,
A. A. Konakov,
Yu. A. Dudin,
Yu. M. Kuznetsov,
N. A. Sobolev,
M. P. Temiryazeva
Abstract:
The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depen…
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The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.
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Submitted 20 February, 2019; v1 submitted 9 February, 2019;
originally announced February 2019.
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Optimal Threshold Control by the Robots of Web Search Engines with Obsolescence of Documents
Authors:
Konstantin Avrachenkov,
Alexander Dudin,
Valentina Klimenok,
Philippe Nain,
Olga Semenova
Abstract:
A typical web search engine consists of three principal parts: crawling engine, indexing engine, and searching engine. The present work aims to optimize the performance of the crawling engine. The crawling engine finds new web pages and updates web pages existing in the database of the web search engine. The crawling engine has several robots collecting information from the Internet. We first calc…
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A typical web search engine consists of three principal parts: crawling engine, indexing engine, and searching engine. The present work aims to optimize the performance of the crawling engine. The crawling engine finds new web pages and updates web pages existing in the database of the web search engine. The crawling engine has several robots collecting information from the Internet. We first calculate various performance measures of the system (e.g., probability of arbitrary page loss due to the buffer overflow, probability of starvation of the system, the average time waiting in the buffer). Intuitively, we would like to avoid system starvation and at the same time to minimize the information loss. We formulate the problem as a multi-criteria optimization problem and attributing a weight to each criterion. We solve it in the class of threshold policies. We consider a very general web page arrival process modeled by Batch Marked Markov Arrival Process and a very general service time modeled by Phase-type distribution. The model has been applied to the performance evaluation and optimization of the crawler designed by INRIA Maestro team in the framework of the RIAM INRIA-Canon research project.
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Submitted 19 January, 2012;
originally announced January 2012.
