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Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$
Authors:
Vincent Dubost,
Tristan Cren,
François Debontridder,
Dimitri Roditchev,
Cristian Vaju,
Vincent Guiot,
Laurent Cario,
Benoît Corraze,
Etienne Janod
Abstract:
Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samp…
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Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.
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Submitted 29 April, 2013; v1 submitted 21 May, 2012;
originally announced May 2012.
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Disorder effects in pnictides : a tunneling spectroscopy study
Authors:
Y. Noat,
T. Cren,
V. Dubost,
S. Lange,
F. Debontridder,
J. Marcus,
P. Toulemonde,
W. Sacks,
D. Roditchev
Abstract:
We present the synthesis and the tunneling spectroscopy study of superconducting FeSe0.5Te0.5 (Tc = 14 K), SmFeAsO0.85 (Tc = 45 K) and SmFeAsO0.9F0.1 (Tc = 52 K). The samples were characterized by Rietveld refinement of X-ray diffraction patterns and transport measurements. Tunneling experiments on FeSe0.5Te0.5 revealed a single superconducting gap of ~1 meV in BCS-like tunnelling conductance spec…
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We present the synthesis and the tunneling spectroscopy study of superconducting FeSe0.5Te0.5 (Tc = 14 K), SmFeAsO0.85 (Tc = 45 K) and SmFeAsO0.9F0.1 (Tc = 52 K). The samples were characterized by Rietveld refinement of X-ray diffraction patterns and transport measurements. Tunneling experiments on FeSe0.5Te0.5 revealed a single superconducting gap of ~1 meV in BCS-like tunnelling conductance spectra. In SmFeAsO0.85 and SmFeAsO0.9F0.1 however, more complex spectra were observed characterized by two gap-like structures at ~4 meV and ~10 meV. These spectra are qualitatively understood assuming a two-band superconductor with a 's\pm' order parameter. We show that depending on the sign relation between the pairing amplitudes in the two bands, the interband quasiparticle scattering has a crucial effect on the shape of the tunneling spectra. Detailed analysis of the tunneling spectroscopy data supports the 's\pm' model, but single-gap spectra found in FeSe0.5Te0.5 are more compatible with a disorder-induced 's'-wave gap, due to the Se-Te substitution.
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Submitted 21 July, 2010; v1 submitted 19 July, 2010;
originally announced July 2010.
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Evidence for Scattering-Dependent Multigap Superconductivity in Ba8Si46
Authors:
Yves Noat,
Tristan Cren,
Pierre Toulemonde,
Alfonso San Miguel,
Francois Debontridder,
Vincent Dubost,
Dimitri Roditchev
Abstract:
We have studied the quasiparticle excitation spectrum of the superconductor Ba8Si46 by local tunneling spectroscopy. Using high energy resolution achieved in Superconductor-Superconductor junctions we observed tunneling conductance spectra of a non-conventional shape revealing two distinct energy gaps, DeltaL = 1.3meV and DeltaS = 0.9meV. The analysis of tunneling data evidenced that DeltaL is t…
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We have studied the quasiparticle excitation spectrum of the superconductor Ba8Si46 by local tunneling spectroscopy. Using high energy resolution achieved in Superconductor-Superconductor junctions we observed tunneling conductance spectra of a non-conventional shape revealing two distinct energy gaps, DeltaL = 1.3meV and DeltaS = 0.9meV. The analysis of tunneling data evidenced that DeltaL is the principal superconducting gap while DeltaS, smaller and more dispersive, is induced into an intrinsically non-superconducting band of the material by the inter-band quasiparticle scattering.
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Submitted 19 February, 2010;
originally announced February 2010.
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Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
Authors:
C. Vaju,
L. Cario,
B. Corraze,
E. Janod,
V. Dubost,
T. Cren,
D. Roditchev,
D. Braithwaite,
O. Chauvet
Abstract:
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these sys…
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Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron do** or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.
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Submitted 10 September, 2009;
originally announced September 2009.
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Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides
Authors:
Vincent Dubost,
T. Cren,
C. Vaju,
Laurent Cario,
B. Corraze,
E. Janod,
François Debontridder,
D. Roditchev
Abstract:
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the…
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We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.
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Submitted 30 June, 2009;
originally announced June 2009.
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Scanning Tunneling Spectroscopy on the novel superconductor CaC6
Authors:
N. Bergeal,
V. Dubost,
Y. Noat,
W. Sacks,
D. Roditchev,
N. Emery,
C. Herold,
J-F. Mareche,
P. Lagrange,
G. Loupias
Abstract:
We present scanning tunneling microscopy and spectroscopy of the newly discovered superconductor CaC$_6$. The tunneling conductance spectra, measured between 3 K and 15 K, show a clear superconducting gap in the quasiparticle density of states. The gap function extracted from the spectra is in good agreement with the conventional BCS theory with $Δ(0)$ = 1.6 $\pm$ 0.2 meV. The possibility of gap…
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We present scanning tunneling microscopy and spectroscopy of the newly discovered superconductor CaC$_6$. The tunneling conductance spectra, measured between 3 K and 15 K, show a clear superconducting gap in the quasiparticle density of states. The gap function extracted from the spectra is in good agreement with the conventional BCS theory with $Δ(0)$ = 1.6 $\pm$ 0.2 meV. The possibility of gap anisotropy and two-gap superconductivity is also discussed. In a magnetic field, direct imaging of the vortices allows to deduce a coherence length in the ab plane $ξ_{ab}\simeq$ 33 nm.
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Submitted 7 April, 2006;
originally announced April 2006.
