Showing 1–1 of 1 results for author: Duarte, V G M
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Moiré excitons in biased twisted bilayer graphene under pressure
Authors:
V. G. M. Duarte,
D. R. da Costa,
N. M. R. Peres,
L. K. Teles,
A. J. Chaves
Abstract:
Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing…
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Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges are located along the K-Gamma path of the superlattice Brillouin Zone, with the bandgap reaching values up to 200 meV in the single-particle picture. Employing the formalism of the semiconductor Bloch equations, we observe an enhancement of the bandgap due to the electron-electron interaction, with a renormalization of the bandgap of about 160 meV. From the solution of the corresponding Bethe-Salpeter equation, we show that this system supports highly anisotropic bright excitons whose electrons and holes are strongly hybridized between the adjacent layers.
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Submitted 14 October, 2023;
originally announced October 2023.
