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Qubits made by advanced semiconductor manufacturing
Authors:
A. M. J. Zwerver,
T. Krähenmann,
T. F. Watson,
L. Lampert,
H. C. George,
R. Pillarisetty,
S. A. Bojarski,
P. Amin,
S. V. Amitonov,
J. M. Boter,
R. Caudillo,
D. Corras-Serrano,
J. P. Dehollain,
G. Droulers,
E. M. Henry,
R. Kotlyar,
M. Lodari,
F. Luthi,
D. J. Michalak,
B. K. Mueller,
S. Neyens,
J. Roberts,
N. Samkharadze,
G. Zheng,
O. K. Zietz
, et al. (4 additional authors not shown)
Abstract:
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr…
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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer
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Submitted 29 January, 2021;
originally announced January 2021.
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Quantum Dot Arrays in Silicon and Germanium
Authors:
W. I. L. Lawrie,
H. G. J. Eenink,
N. W. Hendrickx,
J. M. Boter,
L. Petit,
S. V. Amitonov,
M. Lodari,
B. Paquelet Wuetz,
C. Volk,
S. Philips,
G. Droulers,
N. Kalhor,
F. van Riggelen,
D. Brousse,
A. Sammak,
L. M. K. Vandersypen,
G. Scappucci,
M. Veldhorst
Abstract:
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb…
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Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlap** gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing.
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Submitted 14 September, 2019;
originally announced September 2019.
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Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
Authors:
D. Sabbagh,
N. Thomas,
J. Torres,
R. Pillarisetty,
P. Amin,
H. C. George,
K. Singh,
A. Budrevich,
M. Robinson,
D. Merrill,
L. Ross,
J. Roberts,
L. Lampert,
L. Massa,
S. Amitonov,
J. Boter,
G. Droulers,
H. G. J. Eenink,
M. van Hezel,
D. Donelson,
M. Veldhorst,
L. M. K. Vandersypen,
J. S. Clarke,
G. Scappucci
Abstract:
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of…
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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Submitted 21 January, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Spin lifetime and charge noise in hot silicon quantum dot qubits
Authors:
L. Petit,
J. M. Boter,
H. G. J. Eenink,
G. Droulers,
M. L. V. Tagliaferri,
R. Li,
D. P. Franke,
K. J. Singh,
J. S. Clarke,
R. N. Schouten,
V. V. Dobrovitski,
L. M. K. Vandersypen,
M. Veldhorst
Abstract:
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise…
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We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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Submitted 1 September, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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On the resistivity at low temperatures in electron-doped cuprate superconductors
Authors:
S. Finkelman,
M. Sachs,
J. Paglione,
G. Droulers,
P. Bach,
R. L. Greene,
Y. Dagan
Abstract:
We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome on the underdoped side. The sheet resistance increases with increasing oxygen content whereas the superconducting transition temperature is steadily decreasing…
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We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome on the underdoped side. The sheet resistance increases with increasing oxygen content whereas the superconducting transition temperature is steadily decreasing down to zero. Upon applying various magnetic fields to suppress superconductivity we found that the sheet resistance increases when the temperature is lowered. It saturates at very low temperatures. These results, along with the magnetoresistance, cannot be described in the context of zero temperature two dimensional superconductor-to-insulator transition nor as a simple Kondo effect due to scattering off spins in the copper-oxide planes. We conjecture that due to the proximity to an antiferromagnetic phase magnetic droplets are induced. This results in negative magnetoresistance and in an upturn in the resistivity.
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Submitted 10 August, 2010;
originally announced August 2010.
