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Electron irradiation: from test to material tailoring
Authors:
A. Alessi,
O. Cavani,
R. Grasset,
H. -J. Drouhin,
V. I. Safarov,
M. Konczykowski
Abstract:
In this article, we report some examples of how high-energy electron irradiation can be used as a tool for sha** material properties turning the generation of point-defects into an advantage beyond the presumed degradation of the properties. Such an approach is radically different from what often occurs when irradiation is used as a test for radiation hard materials or devices degradation in har…
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In this article, we report some examples of how high-energy electron irradiation can be used as a tool for sha** material properties turning the generation of point-defects into an advantage beyond the presumed degradation of the properties. Such an approach is radically different from what often occurs when irradiation is used as a test for radiation hard materials or devices degradation in harsh environments. We illustrate the potential of this emerging technique by results obtained on two families of materials, namely semiconductors and superconductors.
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Submitted 1 September, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Spin injection efficiency at metallic interfaces probed by THz emission spectroscopy
Authors:
Jacques Hawecker,
T. H. Dang,
Enzo Rongione,
James Boust,
Sophie Collin,
Jean-Marie George,
Henri-Jean Drouhin,
Yannis Laplace,
Romain Grasset,
**gwei Dong,
Juliette Mangeney,
Jerome Tignon,
Henri Jaffrès,
Luca Perfetti,
Sukhdeep Dhillon
Abstract:
Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' l…
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Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' layer thickness, where THz emission generated by the inverse spin Hall effect is compared to the Gilbert dam** of the ferromagnetic resonance. Through the insertion of the 'X' layer we show that the ultrafast spin current injected in the non-magnetic layer defines a direct spin conductance, whereas the Gilbert dam** leads to an effective spin mixing-conductance of the trilayer. Importantly, we show that these two parameters are connected to each other and that spin-memory losses can be modeled via an effective Hamiltonian with Rashba fields. This work highlights that magneto-circuits concepts can be successfully extended to ultrafast spintronic devices, as well as enhancing the understanding of spin-to-charge conversion processes through the complementarity between ultrafast THz spectroscopy and steady state techniques.
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Submitted 17 March, 2021;
originally announced March 2021.
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Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
Authors:
T. Huong Dang,
D. Quang To,
E. Erina,
T. L. Hoai Nguyen,
V. Safarov,
H. Jaffres,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in…
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We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.
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Submitted 25 July, 2017;
originally announced July 2017.
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Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces
Authors:
T. Huong Dang,
H. Jaffrès,
T. L. Hoai Nguyen,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of…
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We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect.
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Submitted 2 September, 2015;
originally announced September 2015.
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Anisotropic magneto-thermal transport and Spin-Seebeck effect
Authors:
J. -E. Wegrowe,
H. -J. Drouhin,
D. Lacour
Abstract:
The angular dependence of the thermal transport in insulating or conducting ferromagnets is derived on the basis of the Onsager reciprocity relations applied to a magnetic system. It is shown that the angular dependence of the temperature gradient takes the same form as that of the anisotropic magnetoresistance, including anomalous and planar Hall contributions. The measured thermocouple generated…
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The angular dependence of the thermal transport in insulating or conducting ferromagnets is derived on the basis of the Onsager reciprocity relations applied to a magnetic system. It is shown that the angular dependence of the temperature gradient takes the same form as that of the anisotropic magnetoresistance, including anomalous and planar Hall contributions. The measured thermocouple generated between the extremities of the non-magnetic electrode in thermal contact to the ferromagnet follows this same angular dependence. The sign and amplitude of the magneto-voltaic signal is controlled by the difference of the Seebeck coefficients of the thermocouple.
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Submitted 19 November, 2013;
originally announced November 2013.
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Hydrostatic strain enhancement in laterally confined SiGe nanostripes
Authors:
G. M. Vanacore,
M. Chaigneau,
N. Barrett,
M. Bollani,
F. Boioli,
M. Salvalaglio,
F. Montalenti,
N. Manini,
L. Caramella,
P. Biagioni,
D. Chrastina,
G. Isella,
O. Renault,
M. Zani,
R. Sordan,
G. Onida,
R. Ossikovski,
H. -J. Drouhin,
A. Tagliaferri
Abstract:
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio c…
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Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function map**, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.
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Submitted 6 June, 2013;
originally announced June 2013.
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Thermal Spin-Accumulation in Electric Conductors and Insulators
Authors:
J. -E. Wegrowe,
H. -J. Drouhin,
D. Lacour
Abstract:
The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model is proposed in order to describe the effect of out-of-equilibrium spin-dependent heat carriers in electric conductors and insulators. It is shown that thermal…
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The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model is proposed in order to describe the effect of out-of-equilibrium spin-dependent heat carriers in electric conductors and insulators. It is shown that thermal spin-accumulation can be generated by the heat currents only over an arbitrarily long distance for both electric conductors or electric insulators. The diffusion equations for thermal spin-accumulation are derived in both cases, and the principle of its detection based on Spin-Nernst effect is described.
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Submitted 13 July, 2012;
originally announced July 2012.
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Spin-Orbit Engineering of Semiconductor Heterostructures
Authors:
Federico Bottegoni,
Henri-Jean Drouhin,
Guy Fishman,
Jean-Eric Wegrowe
Abstract:
We present a systematic construction of the probability-current operator,based on a momentum power expansion of effective Hamiltonians. The result is valid in the presence of a Rashba term and when a D'yakonov--Perel contribution is included. We propose practical tools for spin-orbit engineering of semiconductor heterostructures. We apply this formalism to a paradigmatic system, the interface betw…
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We present a systematic construction of the probability-current operator,based on a momentum power expansion of effective Hamiltonians. The result is valid in the presence of a Rashba term and when a D'yakonov--Perel contribution is included. We propose practical tools for spin-orbit engineering of semiconductor heterostructures. We apply this formalism to a paradigmatic system, the interface between two semi-infinite media, on one side a free-electron-like material and on the other side a barrier material with spin-orbit interaction. We show that the usual boundary conditions, namely the continuity of the envelope function and of a velocity at the interface, according to the BenDaniel-Duke approach, comply with the conservation of the probability current only when first- (Rashba-like) and second-order (free-electron-like) terms are taken into account in the Hamiltonian. We revisit the boundary conditions and we prove that the envelope function may be discontinuous at the interface.
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Submitted 23 September, 2011;
originally announced September 2011.
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Spin-Currents and Spin-Pum** Forces for Spintronics
Authors:
J. -E. Wegrowe,
H. -J. Drouhin
Abstract:
A general definition of the Spintronics concept of spin-pum** is proposed as generalized forces conjugated to the spin degrees of freedom in the framework of the theory of mesoscopic non-equilibrium thermodynamics. It is shown that at least three different kinds of spin-pum** forces and associated spin-currents can be defined in the most simple spintronics system (the Ferromagnetic/Non-Ferroma…
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A general definition of the Spintronics concept of spin-pum** is proposed as generalized forces conjugated to the spin degrees of freedom in the framework of the theory of mesoscopic non-equilibrium thermodynamics. It is shown that at least three different kinds of spin-pum** forces and associated spin-currents can be defined in the most simple spintronics system (the Ferromagnetic/Non-Ferromagnetic metal interface). Furthermore, the generalized force associated to the ferromagnetic collective variable is also introduced in an equal footing, in order to describe the coexistence of the spin of the conduction electrons (paramagnetic spins attached to $s$-band electrons) and the ferromagnetic-order parameter. The dynamical coupling between these two kinds of magnetic degrees of freedom is presented, and interpreted in terms of spin-transfer effects.
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Submitted 9 December, 2010;
originally announced December 2010.
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Spin rotation, spin filtering, and spin transfer in directional tunneling through non-centrosymmetric semiconductor barriers
Authors:
T. L. Hoai Nguyen,
Henri-Jean Drouhin,
Jean-Eric Wegrowe,
Guy Fishman
Abstract:
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling proc…
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We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved. Along some crystallographic directions, the incident wave experiences spin filtering during the tunneling. These results open stimulating perspectives for spin manipulation in tunnel devices.
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Submitted 13 January, 2009; v1 submitted 8 July, 2008;
originally announced July 2008.
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Magnetization reversal driven by spin-injection : a mesoscopic spin-transfer effect
Authors:
J. -E. Wegrowe,
S. M. Santos,
M. -C. Ciornei,
H. -J. Drouhin,
J. M. Rubí
Abstract:
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space, the density of magnetic moments. The corresponding gradient leads to a current-dependent diffusion process of the magnetization. In order to describe this effe…
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A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space, the density of magnetic moments. The corresponding gradient leads to a current-dependent diffusion process of the magnetization. In order to describe this effect, the dynamics of the magnetization of a ferromagnetic single domain is reconsidered in the framework of the thermokinetic theory of mesoscopic systems. Assuming an Onsager cross-coefficient that couples the currents, it is shown that spin-dependent electric transport leads to a correction of the Landau-Lifshitz-Gilbert equation of the ferromagnetic order parameter with supplementary diffusion terms. The consequence of spin-injection in terms of activation process of the ferromagnet is deduced, and the expressions of the effective energy barrier and of the critical current are derived. Magnetic fluctuations are calculated: the correction to the fluctuations is similar to that predicted for the activation. These predictions are consistent with the measurements of spin-transfer obtained in the activation regime and for ferromagnetic resonance under spin-injection.
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Submitted 7 January, 2008;
originally announced January 2008.
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Spin-transfer in an open ferromagnetic layer: from negative dam** to effective temperature
Authors:
J. -E. Wegrowe,
C. Ciornei,
H. -J. Drouhin
Abstract:
Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the magnetization, in which additional current-dependent dam** factors are added, and can be positive or negative. The origin of the dam** can be investigate…
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Spin-transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin-injection. Most of the experimental results about spin transfer are described on the basis of the Landau-Lifshitz-Gilbert equation of the magnetization, in which additional current-dependent dam** factors are added, and can be positive or negative. The origin of the dam** can be investigated further by performing stochastic experiments, like one shot relaxation experiments under spin-injection in the activation regime of the magnetization. In this regime, the Néel-Brown activation law is observed which leads to the introduction of a current-dependent effective temperature. In order to justify the introduction of these counterintuitive parameters (effective temperature and negative dam**), a detailed thermokinetic analysis of the different sub-systems involved is performed. We propose a thermokinetic description of the different forms of energy exchanged between the electric and the ferromagnetic sub-systems at a Normal/Ferromagnetic junction. The corresponding Fokker Planck equations, including relaxations, are derived. The dam** coefficients are studied in terms of Onsager-Casimir transport coefficients, with the help of the reciprocity relations. The effective temperature is deduced in the activation regime.
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Submitted 10 October, 2006;
originally announced October 2006.
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Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation
Authors:
J. -E. Wegrowe,
Q. Anh Nguyen,
M. Al-Barki,
J. -F. Dayen,
T. L. Wade,
H. -J. Drouhin
Abstract:
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expr…
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Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni nanowires contacted with Ni, Au and Cu. The results of this study show that while the giant magnetoresistance and corresponding thermopower demonstrates the role of spin-flip scattering, the observed anisotropic magnetothermopower indicates interband s-d relaxation mechanisms.
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Submitted 26 October, 2005; v1 submitted 8 August, 2005;
originally announced August 2005.
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Irreversible spin-transfer and magnetization reversal under spin-injection
Authors:
J. -E. Wegrowe,
H. -J. Drouhin
Abstract:
In the context of spin electronics, the two spin-channel model assumes that the spin carriers are composed of two distinct populations: the conduction electrons of spin up, and the conduction electrons of spin down. In order to distinguish the paramagnetic and ferromagnetic contributions in spin injection, we describe the current injection with four channels : the two spin populations of the con…
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In the context of spin electronics, the two spin-channel model assumes that the spin carriers are composed of two distinct populations: the conduction electrons of spin up, and the conduction electrons of spin down. In order to distinguish the paramagnetic and ferromagnetic contributions in spin injection, we describe the current injection with four channels : the two spin populations of the conduction bands ($s$ or paramagnetic) and the two spin populations of the more correlated electrons ($d$ or ferromagnetic). The redistribution of the conduction electrons at the interface is described by relaxation mechanisms between the channels. Providing that the $d$ majority-spin band is frozen, $s-d$ relaxation essentially concerns the minority-spin channels. Accordingly, even in the abscence of spin-flip scattering (i.e. without standard spin-accumulation or giant magnetoresistance), the $s-d$ relaxation leads to a $d$ spin accumulation effect. The coupled diffusion equations for the two relaxation processes ($s-d$ and spin-flip) are derived. The link with the ferromagnetic order parameter $\vec{M}$ is performed by assuming that only the $d$ channel contributes to the Landau-Lifshitz-Gilbert equation. The effect of magnetization reversal induced by spin injection is explained by these relaxations under the assumption that the spins of the conduction electrons act as environmental degrees of freedom on the magnetization.
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Submitted 18 August, 2004;
originally announced August 2004.
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Transfer of magnetization by spin injection between both interfaces of a Ni nanowire
Authors:
J. -E. Wegrowe,
M. Dubey,
T. Wade,
H. -J. Drouhin,
M. Konczykowski
Abstract:
Magnetization switching provoked by spin-injection is studied in Ni nanowires of various size and morphology. The response of the magnetization to the spin-injection is studied as a function of the amplitude of the current, the temperature, and the symmetry of the interfaces. The amplitude of the response of the magnetization to spin-injection is a decreasing function of the temperature, does no…
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Magnetization switching provoked by spin-injection is studied in Ni nanowires of various size and morphology. The response of the magnetization to the spin-injection is studied as a function of the amplitude of the current, the temperature, and the symmetry of the interfaces. The amplitude of the response of the magnetization to spin-injection is a decreasing function of the temperature, does not depend on the current sign, and occurs only in the case of asymmetric interfaces. It is shown that the spin-injection does not act on small magnetic inhomogeneities inside the layer. Some consequences in terms of longitudinal spin-transfer are discussed.
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Submitted 31 July, 2003;
originally announced July 2003.
