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Showing 1–3 of 3 results for author: Droopad, R

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  1. arXiv:1806.09270  [pdf, ps, other

    cond-mat.mes-hall eess.SP

    Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes

    Authors: E. R. Brown, W-D. Zhang, T. A. Growden, P. R. Berger, R. Droopad, D. F. Storm, D. J. Meyer

    Abstract: We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission. The measurements are made with a standard, un-isolated RF receiver and calibration is made using a substitution-resistor/hot-cold radiometric technique which wo… ▽ More

    Submitted 24 June, 2018; originally announced June 2018.

    Comments: 10 pages, 5 figures

  2. arXiv:1804.07666  [pdf

    cond-mat.mes-hall

    Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant- and Zener- Co-Tunneling

    Authors: E. R. Brown, W-D. Zhang, T. A. Growden, P. R. Berger, R. Droopad

    Abstract: We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very similar to what was observed recently in GaN/AlN DBRTDs, both of which suggest that the mechanism for emission is cross-gap electron-hole recombination via reso… ▽ More

    Submitted 20 April, 2018; originally announced April 2018.

  3. arXiv:cond-mat/0401591  [pdf

    cond-mat.mes-hall

    High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

    Authors: B. M. Kim, T. Brintlinger, E. Cobas, Haimei Zheng, M. S. Fuhrer, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser

    Abstract: Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increas… ▽ More

    Submitted 28 January, 2004; originally announced January 2004.

    Comments: 13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett

    Journal ref: Applied Physics Letters 84, 1946 (2004)