Charge Transport in Mixed Metal Halide Perovskite Semiconductors
Authors:
Satyaprasad P. Senanayak,
Krishanu Dey,
Ravichandran Shivanna,
Weiwei Li,
Dibyajyoti Ghosh,
Bart Roose,
Youcheng Zhang,
Zahra Andaji-Garmaroudi,
Nikhil Tiwale,
Judith L. MacManus Driscoll,
Richard Friend,
Samuel D. Stranks,
Henning Sirringhaus
Abstract:
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectro…
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Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the do**, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices.
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Submitted 5 February, 2022;
originally announced February 2022.
High Critical Current Density and Improved Irreversibility Field in Bulk MgB2 Made By A Scaleable, Nanoparticle Addition Route
Authors:
J. Wang,
Y. Bugoslavsky,
A. Berenov,
L. Cowey,
A. D. Caplin,
L. F. Cohen,
J. L. MacManus Driscoll,
L. D. Cooley,
X. Song,
D. C. Larbalestier
Abstract:
Bulk samples of MgB2 were prepared with 5, 10, and 15% wt.% Y2O3 nanoparticles added using a simple solid-state reaction route. Transmission electron microscopy (TEM) showed a fine nanostructure consisting of ~3-5 nm YB4 nanoparticles embedded within MgB2 grains of ~400 nm size. Compared to an undoped control sample, an improvement in the in-field critical current density Jc was observed, most n…
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Bulk samples of MgB2 were prepared with 5, 10, and 15% wt.% Y2O3 nanoparticles added using a simple solid-state reaction route. Transmission electron microscopy (TEM) showed a fine nanostructure consisting of ~3-5 nm YB4 nanoparticles embedded within MgB2 grains of ~400 nm size. Compared to an undoped control sample, an improvement in the in-field critical current density Jc was observed, most notably for 10% do**. At 4.2K, the lower bound Jc value was ~2x105A.cm-2 at 2T. At 20K, the corresponding value was ~8x104A.cm-2. Irreversibility fields were ~11.5 T at 4.2K and 5.5T at 20K, compared to ~4T and ~8T, respectively, for high-pressure synthesized bulk samples.
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Submitted 22 April, 2002;
originally announced April 2002.
