-
Excitation spectra of two correlated electrons in a quantum dot
Authors:
T. Ihn,
C. Ellenberger,
K. Ensslin,
Constantine Yannouleas,
Uzi Landman,
D. C. Driscoll,
A. C. Gossard
Abstract:
Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest singlet- and triplet states. These states can be reproduced in an exact diagonalization calculation of a parabolic dot with moderate in-plane anisotropy. The calcula…
▽ More
Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest singlet- and triplet states. These states can be reproduced in an exact diagonalization calculation of a parabolic dot with moderate in-plane anisotropy. The calculated spectra are in reasonable quantitative agreement with the measurement, and suggest that correlations between the electrons play a significant role in this system. Comparison of the exact results with the restricted Hartree-Fock and the generalized Heitler-London approach shows that the latter is more appropriate for this system because it can account for the spatial correlation of the electron states.
△ Less
Submitted 28 December, 2021;
originally announced December 2021.
-
Electron counting in quantum dots
Authors:
S. Gustavsson,
R. Leturcq,
M. Studer,
I. Shorubalko,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude…
▽ More
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters.
In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons.
The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.
△ Less
Submitted 28 May, 2009;
originally announced May 2009.
-
Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers
Authors:
Y. Yamauchi,
M. Hashisaka,
S. Nakamura,
K. Chida,
S. Kasai,
T. Ono,
R. Leturcq,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard,
K. Kobayashi
Abstract:
We performed a transport measurement in a ballistic Aharonov-Bohm ring and a Fabry-Perot type interferometer. In both cases we found that the interference signal is reversed at a certain bias voltage and that the visibility decays exponentially as a function of temperature, being in a strong analogy with recent reports on the electronic Mach-Zehnder interferometers. By analyzing the data includi…
▽ More
We performed a transport measurement in a ballistic Aharonov-Bohm ring and a Fabry-Perot type interferometer. In both cases we found that the interference signal is reversed at a certain bias voltage and that the visibility decays exponentially as a function of temperature, being in a strong analogy with recent reports on the electronic Mach-Zehnder interferometers. By analyzing the data including those in the previous works, the energy scales that characterize the dephasing are found to be dominantly dependent on the interferometer size, implying the presence of a universal behavior in ballistic interferometers in both linear and non-linear transport regimes.
△ Less
Submitted 14 April, 2009; v1 submitted 7 March, 2009;
originally announced March 2009.
-
Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
Authors:
M. Studer,
G. Salis,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute v…
▽ More
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute values and signs of the two components and show that for zero Rashba spin splitting the anisotropy of the spin-dephasing rate vanishes.
△ Less
Submitted 14 July, 2009; v1 submitted 5 March, 2009;
originally announced March 2009.
-
Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts
Authors:
U. Gasser,
S. Gustavsson,
B. Küng,
K. Ensslin,
T. Ihn,
D. C. Driscoll,
A. C. Gossard
Abstract:
We investigate experimentally the influence of current flow through two independent quantum point contacts to a nearby double quantum dot realized in a GaAs-AlGaAs heterostructure. The observed current through the double quantum dot can be explained in terms of coupling to a bosonic bath. The temperature of the bath depends on the power generated by the current flow through the quantum point con…
▽ More
We investigate experimentally the influence of current flow through two independent quantum point contacts to a nearby double quantum dot realized in a GaAs-AlGaAs heterostructure. The observed current through the double quantum dot can be explained in terms of coupling to a bosonic bath. The temperature of the bath depends on the power generated by the current flow through the quantum point contact. We identify the dominant absorption and emission mechanisms in a double quantum dot as an interaction with acoustic phonons. The experiment excludes coupling of a double quantum dot to shot noise generated by quantum point contact as the dominant mechanism.
△ Less
Submitted 12 February, 2009; v1 submitted 21 August, 2008;
originally announced August 2008.
-
Time-resolved detection of single-electron interference
Authors:
S. Gustavsson,
R. Leturcq,
M. Studer,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to…
▽ More
We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With increased bias voltage, the quantum point contact exerts a back-action on the interferometer leading to decoherence. We attribute this to emission of radiation from the quantum point contact, which drives non-coherent electronic transitions in the quantum dots.
△ Less
Submitted 11 July, 2008;
originally announced July 2008.
-
Detecting single-electron tunneling involving virtual processes in real time
Authors:
S. Gustavsson,
M. Studer,
R. Leturcq,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $δ$ from the Fermi energy in the leads. The non-zero tunneling probability can be interpreted as cotunneling, which occurs as a direct consequence of time-energy uncertainty. For small energy separation the ele…
▽ More
We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $δ$ from the Fermi energy in the leads. The non-zero tunneling probability can be interpreted as cotunneling, which occurs as a direct consequence of time-energy uncertainty. For small energy separation the electrons in the quantum dots delocalize and form molecular states. In this regime we establish the experimental equivalence between cotunneling and sequential tunneling into molecular states for electron transport in a double quantum dot. Finally, we investigate inelastic cotunneling processes involving excited states of the quantum dots. Using the time-resolved charge detection techniques, we are able to extract the shot noise of the current in the cotunneling regime.
△ Less
Submitted 13 October, 2008; v1 submitted 22 May, 2008;
originally announced May 2008.
-
Frequency-selective single photon detection using a double quantum dot
Authors:
S. Gustavsson,
M. Studer,
R. Leturcq,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily…
▽ More
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.
△ Less
Submitted 22 May, 2007;
originally announced May 2007.
-
In Situ Treatment of a Scanning Gate Microscopy Tip
Authors:
A. E. Gildemeister,
T. Ihn,
M. Sigrist,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field t…
▽ More
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.
△ Less
Submitted 27 June, 2007; v1 submitted 23 March, 2007;
originally announced March 2007.
-
Measurement of the Tip-Induced Potential in Scanning Gate Experiments
Authors:
A. E. Gildemeister,
T. Ihn,
M. Sigrist,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial dependence of the tip's lever arm with high resolution. We find that two parts of the tip-induced potential can be distinguished, one that depends on…
▽ More
We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial dependence of the tip's lever arm with high resolution. We find that two parts of the tip-induced potential can be distinguished, one that depends on the voltage applied to the tip and one that is independent of this voltage. The first part is due to the metallic tip while we interpret the second part as the effect of a charged dielectric particle on the tip. In the measurements of the lever arm we find fine structure that depends on which quantum state we study. The results are discussed in view of scanning gate experiments where the tip is used as a movable gate to study nanostructures.
△ Less
Submitted 9 July, 2007; v1 submitted 21 February, 2007;
originally announced February 2007.
-
Imaging a Coupled Quantum Dot - Quantum Point Contact System
Authors:
A. E. Gildemeister,
T. Ihn,
R. Schleser,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyz…
▽ More
We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyzed the tip-induced potential quantitatively and found its shape to be independent of the voltage applied to the tip within a certain range of parameters. We estimate that the trap density is below 0.1% of the do** density and that the interaction energy between the quantum dot and a trap is a significant portion of the dot's charging energy. Possibly, such charge traps are the reason for frequently observed parametric charge rearrangements.
△ Less
Submitted 13 February, 2007;
originally announced February 2007.
-
Counting statistics and super-Poissonian noise in a quantum dot
Authors:
S. Gustavsson,
R. Leturcq,
B. Simovic,
R. Schleser,
P. Studerus,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore,…
▽ More
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poissonian noise suggests a long relaxation time for the involved excited state, which could be related to the spin relaxation time.
△ Less
Submitted 12 December, 2006; v1 submitted 15 May, 2006;
originally announced May 2006.
-
Two-subband quantum Hall effect in parabolic quantum wells
Authors:
C. Ellenberger,
B. Simovic,
R. Leturcq,
T. Ihn,
S. E. Ulloa,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts…
▽ More
The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum Hall plateaus. These effects set in with the occupation of the second subband. We discuss our observations in the context of single-particle Landau fan charts of a two-subband system empirically extended by a density dependent subband separation and an enhanced spin-splitting g*.
△ Less
Submitted 10 February, 2006;
originally announced February 2006.
-
Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages
Authors:
D. Graf,
M. Frommenwiler,
P. Studerus,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scan…
▽ More
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth and the resulting electronic properties of the patterned structures are compared for constant and modulated voltage applied to the conductive tip of the scanning force microscope. All the lithography has been performed in non-contact mode. Modulating the applied voltage enhances the aspect ratio of the oxide lines, which significantly strengthens the insulating properties of the lines on GaAs. In addition, the oxidation process is found to be more reliable and reproducible. Using this technique, a quantum point contact and a quantum wire have been defined and the electronic stability, the confinement potential and the electrical tunability are demonstrated to be similar to the oxidation with constant voltage.
△ Less
Submitted 31 January, 2006;
originally announced January 2006.
-
Magnetic field symmetry and phase rigidity of the nonlinear conductance in a ring
Authors:
R. Leturcq,
D. Sanchez,
G. Gotz,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear meso…
▽ More
We have performed nonlinear transport measurements as a function of a perpendicular magnetic field in a semiconductor Aharonov-Bohm ring connected to two leads. While the voltage-symmetric part of the conductance is symmetric in magnetic field, the voltage-antisymmetric part of the conductance is not symmetric. These symmetry relations are compatible with the scattering theory for nonlinear mesoscopic transport. The observed asymmetry can be tuned continuously by changing the gate voltages near the arms of the ring, showing that the phase of the nonlinear conductance in a two-terminal interferometer is not rigid, in contrast to the case for the linear conductance.
△ Less
Submitted 5 April, 2006; v1 submitted 25 November, 2005;
originally announced November 2005.
-
Counting statistics of single-electron transport in a quantum dot
Authors:
S. Gustavsson,
R. Leturcq,
B. Simovic,
R. Schleser,
T. Ihn,
P. Studerus,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of t…
▽ More
We have measured the full counting statistics (FCS) of current fluctuations in a semiconductor quantum dot (QD) by real-time detection of single electron tunneling with a quantum point contact (QPC). This method gives direct access to the distribution function of current fluctuations. Suppression of the second moment (related to the shot noise) and the third moment (related to the asymmetry of the distribution) in a tunable semiconductor QD is demonstrated experimentally. With this method we demonstrate the ability to measure very low current and noise levels.
△ Less
Submitted 2 March, 2006; v1 submitted 11 October, 2005;
originally announced October 2005.
-
Probing the Kondo density of states in a three-terminal quantum ring
Authors:
R. Leturcq,
L. Schmid,
K. Ensslin,
Y. Meir,
D. C. Driscoll,
A. C. Gossard
Abstract:
We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to pr…
▽ More
We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to probe directly the Kondo DOS. In addition, by applying a bias between the two strongly coupled leads, we show the splitting of the out-of-equilibrium DOS.
△ Less
Submitted 4 May, 2005;
originally announced May 2005.
-
Cotunneling-mediated transport through excited states in the Coulomb blockade regime
Authors:
R. Schleser,
T. Ihn,
E. Ruh,
K. Ensslin,
M. Tews,
D. Pfannkuche,
D. C. Driscoll,
A. C. Gossard
Abstract:
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occuring after it has been excited by an inelastic cotunneling proces…
▽ More
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occuring after it has been excited by an inelastic cotunneling process. We explain our findings using transport calculations within the real-time Green's function approach, including diagrams up to fourth order in the tunneling matrix elements.
△ Less
Submitted 2 March, 2005;
originally announced March 2005.
-
Finite bias charge detection in a quantum dot
Authors:
R. Schleser,
E. Ruh,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.
△ Less
Submitted 2 March, 2005; v1 submitted 1 March, 2005;
originally announced March 2005.
-
Multiple layer local oxidation for fabricating semiconductor nanostructures
Authors:
M. Sigrist,
A. Fuhrer,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system…
▽ More
Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process.
△ Less
Submitted 5 November, 2004;
originally announced November 2004.
-
Time-Resolved Detection of Individual Electrons in a Quantum Dot
Authors:
R. Schleser,
E. Ruh,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling bet…
▽ More
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling between dot and reservoir can be extracted quantitatively. A similar analysis allows the determination of the occupation probability of the dot states.
△ Less
Submitted 24 June, 2004; v1 submitted 23 June, 2004;
originally announced June 2004.
