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The Need for Speed: Efficient Exact Simulation of Silicon Dangling Bond Logic
Authors:
Jan Drewniok,
Marcel Walter,
Robert Wille
Abstract:
The Silicon Dangling Bond (SiDB) logic platform, an emerging computational beyond-CMOS nanotechnology, is a promising competitor due to its ability to achieve integration density and clock speed values that are several orders of magnitude higher compared to current CMOS fabrication nodes. However, the exact physical simulation of SiDB layouts, which is an essential component of any design validati…
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The Silicon Dangling Bond (SiDB) logic platform, an emerging computational beyond-CMOS nanotechnology, is a promising competitor due to its ability to achieve integration density and clock speed values that are several orders of magnitude higher compared to current CMOS fabrication nodes. However, the exact physical simulation of SiDB layouts, which is an essential component of any design validation workflow, is computationally expensive. In this paper, we propose a novel algorithm called QuickExact, which aims to be both, efficient and exact. To this end, we are introducing three techniques, namely 1) Physically-informed Search Space Pruning, 2) Partial Solution Caching, and 3) Effective State Enumeration. Extensive experimental evaluations confirm that, compared to the state-of-the-art algorithm, the resulting approach leads to a paramount runtime advantage of more than a factor of 5000 on randomly generated layouts and more than a factor of 2000 on an established gate library.
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Submitted 8 August, 2023;
originally announced August 2023.
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QuickSim: Efficient and Accurate Physical Simulation of Silicon Dangling Bond Logic
Authors:
Jan Drewniok,
Marcel Walter,
Samuel Sze Hang Ng,
Konrad Walus,
Robert Wille
Abstract:
Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages of several orders of magnitude over conventional circuit technologies sparked the interest of academia and industry alike. While fabrication capabilities advance rapidly and first design automation methodolo…
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Silicon Dangling Bonds have established themselves as a promising competitor in the field of beyond-CMOS technologies. Their integration density and potential for energy dissipation advantages of several orders of magnitude over conventional circuit technologies sparked the interest of academia and industry alike. While fabrication capabilities advance rapidly and first design automation methodologies have been proposed, physical simulation effectiveness has yet to keep pace. Established algorithms in this domain either suffer from exponential runtime behavior or subpar accuracy levels. In this work, we propose a novel algorithm for the physical simulation of Silicon Dangling Bond systems based on statistical methods that offers both a time-to-solution and an accuracy advantage over the state of the art by more than one order of magnitude and a factor of more than three, respectively, as demonstrated by an exhaustive experimental evaluation.
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Submitted 6 March, 2023;
originally announced March 2023.
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Electron-Hole Binding Governs Carrier Transport in Halide Perovskite Nanocrystal Thin Films
Authors:
Michael F. Lichtenegger,
Jan Drewniok,
Andreas Bornschlegl,
Carola Lampe,
Andreas Singldinger,
Nina A. Henke,
Alexander S. Urban
Abstract:
Two-dimensional halide perovskite nanoplatelets (NPLs) have exceptional light-emitting properties, including wide spectral tunability, ultrafast radiative decays, high quantum yields (QY), and oriented emission. To realize efficient devices, it is imperative to understand how exciton transport progresses in NPL thin films. Due to the high binding energies of electron-hole pairs, excitons are gener…
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Two-dimensional halide perovskite nanoplatelets (NPLs) have exceptional light-emitting properties, including wide spectral tunability, ultrafast radiative decays, high quantum yields (QY), and oriented emission. To realize efficient devices, it is imperative to understand how exciton transport progresses in NPL thin films. Due to the high binding energies of electron-hole pairs, excitons are generally considered the dominant species responsible for carrier transfer. We employ spatially and temporally resolved optical microscopy to map exciton diffusion in perovskite nanocrystal (NC) thin films between 15 °C and 50 °C. At room temperature (RT), we find the diffusion length to be inversely correlated to the thickness of the nanocrystals (NCs). With increasing temperatures, exciton diffusion declines for all NC films, but at different rates. This leads to specific temperature turnover points, at which thinner NPLs exhibit higher diffusion lengths. We attribute this anomalous diffusion behavior to the coexistence of excitons and free electron hole-pairs inside the individual NCs within our temperature range. The organic ligand shell surrounding the NCs prevents charge transfer. Accordingly, any time an electron-hole pair spends in the unbound state reduces the FRET-mediated inter-NC transfer rates and consequently the overall diffusion. These results clarify how exciton diffusion progresses in strongly confined halide perovskite NC films, emphasizing critical considerations for optoelectronic devices.
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Submitted 15 March, 2022;
originally announced March 2022.
