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Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
Authors:
David P. Franke,
Florian M. Hrubesch,
Markus Künzl,
Kohei M. Itoh,
Martin Stutzmann,
Felix Hoehne,
Lukas Dreher,
Martin S. Brandt
Abstract:
The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic dono…
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The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic donors in silicon via strain and determine the two nonzero elements of the S tensor linking strain and electric field gradients in this material to $S_{11}=1.5\times10^{22}$ V/m$^2$ and $S_{44}=6\times 10^{22}$ V/m$^2$. We find a stronger benefit of dynamical decoupling on the coherence properties of transitions subject to first-order quadrupole shifts than on those subject to only second-order shifts and discuss applications of quadrupole physics including mechanical driving of magnetic resonance, cooling of mechanical resonators, and strain-mediated spin coupling.
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Submitted 7 April, 2016; v1 submitted 28 February, 2015;
originally announced March 2015.
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Pulsed Low-Field Electrically Detected Magnetic Resonance
Authors:
L. Dreher,
F. Hoehne,
H. Morishita,
H. Huebl,
M. Stutzmann,
K. M. Itoh,
M. S. Brandt
Abstract:
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well established at X-band frequencies (10 GHz), such as coherent spin rotations, Hahn echoes, and measurements of parallel and antiparallel spin pair life times ar…
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We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well established at X-band frequencies (10 GHz), such as coherent spin rotations, Hahn echoes, and measurements of parallel and antiparallel spin pair life times are also feasible at frequencies in the MHz regime. We find that the Rabi frequency of the coupled 31P electron-nuclear spin system scales with the magnetic field as predicted by the spin Hamiltonian, while the measured spin coherence and recombination times do not strongly depend on the magnetic field in the region investigated. The usefulness of pulsed low-field EDMR for measurements of small hyperfine interactions is demonstrated by electron spin echo envelope modulation measurements of the Pb0 dangling-bond state at the Si/SiO2 interface. A pronounced modulation with a frequency at the free Larmor frequency of hydrogen nuclei was observed for radio frequencies between 38 MHz and 400 MHz, attributed to the nuclear magnetic resonance of hydrogen in an adsorbed layer of water This demonstrates the high sensitivity of low-field EDMR also for spins not directly participating in the spin-dependent transport investigated.
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Submitted 5 February, 2015; v1 submitted 23 October, 2014;
originally announced October 2014.
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Spin Selection Rule-Based Sub-Millisecond Hyperpolarization of Nuclear Spins in Silicon
Authors:
Felix Hoehne,
Lukas Dreher,
David P. Franke,
Martin Stutzmann,
Leonid S. Vlasenko,
Kohei M. Itoh,
Martin S. Brandt
Abstract:
In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme i…
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In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly-coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of approx. 100 ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.
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Submitted 16 August, 2013;
originally announced August 2013.
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Time Constants of Spin-Dependent Recombination Processes
Authors:
Felix Hoehne,
Lukas Dreher,
Maximilian Suckert,
David P. Franke,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spi…
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We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spin pair formation as a function of the optical excitation intensity. Using electron nuclear double resonance, we show that the time constant of spin pair formation is determined by an electron capture process. Based on these time constants we devise a set of rate equations to calculate the current transient after a resonant microwave pulse and compare the results with experimental data. Finally, we critically discuss the effects of different boxcar integration time intervals typically used to analyze pulsed EDMR experiments on the determination of the time constants. The experiments are performed on phosphorus-doped silicon, where EDMR via spin pairs formed by phosphorus donors and Si/SiO2 interface dangling bond defects is detected.
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Submitted 15 July, 2013;
originally announced July 2013.
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Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface
Authors:
Max Suckert,
Felix Hoehne,
Lukas Dreher,
Markus Kuenzl,
Hans Huebl,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data…
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We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.
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Submitted 26 June, 2013;
originally announced June 2013.
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Angle-Dependent Spin-Wave Resonance Spectroscopy of (Ga,Mn)As Films
Authors:
L. Dreher,
C. Bihler,
E. Peiner,
A. Waag,
W. Schoch,
W. Limmer,
S. T. B. Goennenwein,
M. S. Brandt
Abstract:
A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [Bihler et al., Phys. Rev. B 79, 045205 (2009)], this formalism accounts for elliptical magnetization precession and magnetic properties arbitrarily varying across the layer thickness, including the magnetic anisotropy…
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A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [Bihler et al., Phys. Rev. B 79, 045205 (2009)], this formalism accounts for elliptical magnetization precession and magnetic properties arbitrarily varying across the layer thickness, including the magnetic anisotropy parameters, the exchange stiffness, the Gilbert dam**, and the saturation magnetization. To demonstrate the usefulness of our modeling approach, we experimentally study a set of (Ga,Mn)As samples grown by low-temperature molecular-beam epitaxy by means of electrochemical capacitance-voltage measurements and angle-dependent standing spin-wave resonance spectroscopy. By applying our modeling approach, the angle dependence of the spin-wave resonance data can be reproduced in a simulation with one set of simulation parameters for all external field orientations. We find that the approximately linear gradient in the out-of-plane magnetic anisotropy is related to a linear gradient in the hole concentrations of the samples.
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Submitted 5 March, 2013;
originally announced March 2013.
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Surface Acoustic Wave-Driven Ferromagnetic Resonance in Nickel Thin Films: Theory and Experiment
Authors:
L. Dreher,
M. Weiler,
M. Pernpeintner,
H. Huebl,
R. Gross,
M. S. Brandt,
S. T. B. Goennenwein
Abstract:
We present an extensive experimental and theoretical study of surface acoustic wave-driven ferromagnetic resonance. In a first modeling approach based on the Landau-Lifshitz-Gilbert equation, we derive expressions for the magnetization dynamics upon magnetoelastic driving that are used to calculate the absorbed microwave power upon magnetic resonance as well as the spin current density generated b…
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We present an extensive experimental and theoretical study of surface acoustic wave-driven ferromagnetic resonance. In a first modeling approach based on the Landau-Lifshitz-Gilbert equation, we derive expressions for the magnetization dynamics upon magnetoelastic driving that are used to calculate the absorbed microwave power upon magnetic resonance as well as the spin current density generated by the precessing magnetization in the vicinity of a ferromagnet/normal metal interface. In a second modeling approach, we deal with the backaction of the magnetization dynamics on the elastic wave by solving the elastic wave equation and the Landau-Lifshitz-Gilbert equation selfconsistently, obtaining analytical solutions for the acoustic wave phase shift and attenuation. We compare both modeling approaches with the complex forward transmission of a LiNbO$_3$/Ni surface acoustic wave hybrid device recorded experimentally as a function of the external magnetic field orientation and magnitude, rotating the field within three different planes and employing three different surface acoustic wave frequencies. We find quantitative agreement of the experimentally observed power absorption and surface acoustic wave phase shift with our modeling predictions using one set of parameters for all field configurations and frequencies.
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Submitted 31 July, 2012;
originally announced August 2012.
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Lock-in detection for pulsed electrically detected magnetic resonance
Authors:
Felix Hoehne,
Lukas Dreher,
Jan Behrends,
Matthias Fehr,
Hans Huebl,
Klaus Lips,
Alexander Schnegg,
Max Suckert,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We show that in pulsed electrically detected magnetic resonance (pEDMR) signal modulation in combination with a lock-in detection scheme can reduce the low-frequency noise level by one order of magnitude and in addition removes the microwave-induced non-resonant background. This is exemplarily demonstrated for spin-echo measurements in phosphorus-doped Silicon. The modulation of the signal is achi…
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We show that in pulsed electrically detected magnetic resonance (pEDMR) signal modulation in combination with a lock-in detection scheme can reduce the low-frequency noise level by one order of magnitude and in addition removes the microwave-induced non-resonant background. This is exemplarily demonstrated for spin-echo measurements in phosphorus-doped Silicon. The modulation of the signal is achieved by cycling the phase of the projection pulse used in pEDMR for the read-out of the spin state.
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Submitted 22 November, 2011;
originally announced November 2011.
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Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon
Authors:
Lukas Dreher,
Felix Hoehne,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor depending on its nuclear spin state, exploiting a spin-dependent recombination process via a spin pair at the Si/SiO2 interface. The nuclear-spin coherence time of…
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We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor depending on its nuclear spin state, exploiting a spin-dependent recombination process via a spin pair at the Si/SiO2 interface. The nuclear-spin coherence time of the ionized donor is 18 ms, two orders of magnitude longer than in the neutral donor state, rendering the ionized donor a potential resource as a quantum memory. The presented experimental techniques allow for spectroscopy of ionized-donor nuclear spins, increase the sensitivity of electrically detected electron nuclear double resonance by more than two orders of magnitude, and give experimental access to the lifetime of parallel electron spin pairs.
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Submitted 16 January, 2012; v1 submitted 18 September, 2011;
originally announced September 2011.
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Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
Authors:
**ming Lu,
Felix Hoehne,
Andre R. Stegner,
Lukas Dreher,
Hans Huebl,
Martin Stutzmann,
Martin S. Brandt
Abstract:
Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented,…
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Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.
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Submitted 8 February, 2011;
originally announced February 2011.
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Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR
Authors:
Felix Hoehne,
Lukas Dreher,
Hans Huebl,
Martin Stutzmann,
Martin S. Brandt
Abstract:
We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the $^{31}$P nuclear spins, where the $^{31}$P electron spins are detected electrically via spin-dependent transitions…
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We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the $^{31}$P nuclear spins, where the $^{31}$P electron spins are detected electrically via spin-dependent transitions through Si/SiO$_2$ interface states, thus not relying on a polarization of the electron spin system. In addition, the electrical detection of coherent nuclear spin oscillations is shown, demonstrating the feasibility to electrically read out the spin states of possible nuclear spin qubits.
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Submitted 23 December, 2010;
originally announced December 2010.
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Scaling behavior of the spin pum** effect in ferromagnet/platinum bilayers
Authors:
F. D. Czeschka,
L. Dreher,
M. S. Brandt,
M. Weiler,
M. Althammer,
I. -M. Imort,
G. Reiss,
A. Thomas,
W. Schoch,
W. Limmer,
H. Huebl,
R. Gross,
S. T. B. Goennenwein
Abstract:
We systematically measured the DC voltage V_ISH induced by spin pum** together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angl…
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We systematically measured the DC voltage V_ISH induced by spin pum** together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pum** in combination with the inverse spin Hall effect.
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Submitted 29 July, 2011; v1 submitted 14 December, 2010;
originally announced December 2010.
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Acoustically driven ferromagnetic resonance
Authors:
Mathias Weiler,
Lukas Dreher,
Christian Heeg,
Hans Huebl,
Rudolf Gross,
Martin S. Brandt,
Sebastian T. B. Goennenwein
Abstract:
Surface acoustic waves (SAW) in the GHz frequency range are exploited for the all-elastic excitation and detection of ferromagnetic resonance (FMR) in a ferromagnetic/ferroelectric (nickel/lithium niobate) hybrid device. We measure the SAW magneto-transmission at room temperature as a function of frequency, external magnetic field magnitude, and orientation. Our data are well described by a modifi…
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Surface acoustic waves (SAW) in the GHz frequency range are exploited for the all-elastic excitation and detection of ferromagnetic resonance (FMR) in a ferromagnetic/ferroelectric (nickel/lithium niobate) hybrid device. We measure the SAW magneto-transmission at room temperature as a function of frequency, external magnetic field magnitude, and orientation. Our data are well described by a modified Landau-Lifshitz-Gilbert approach, in which a virtual, strain-induced tickle field drives the magnetization precession. This causes a distinct magnetic field orientation dependence of elastically driven FMR that we observe in both model and experiment.
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Submitted 6 April, 2011; v1 submitted 29 September, 2010;
originally announced September 2010.
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Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers
Authors:
L. Dreher,
D. Donhauser,
J. Daeubler,
M. Glunk,
C. Rapp,
W. Schoch,
R. Sauer,
W. Limmer
Abstract:
Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and o…
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Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetry, phenomenologically describing the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR) by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A-oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the MA and AMR at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.
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Submitted 15 February, 2010; v1 submitted 10 February, 2010;
originally announced February 2010.
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Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration
Authors:
M. Glunk,
J. Daeubler,
L. Dreher,
S. Schwaiger,
W. Schoch,
R. Sauer,
W. Limmer,
A. Brandlmaier,
S. T. B. Goennenwein,
C. Bihler,
M. S. Brandt
Abstract:
We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the rela…
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We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As layers with 5% Mn on relaxed graded (In,Ga)As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the relaxed lattice constant of the as-grown and annealed (Ga,Mn)As layers turned out to be essentially unaffected by the strain. Angle-dependent magnetotransport measurements performed at different magnetic field strengths were used to probe the magnetic anisotropy. The measurements reveal a pronounced linear dependence of the uniaxial out-of-plane anisotropy on both strain and hole density. Whereas the uniaxial and cubic in-plane anisotropies are nearly constant, the cubic out-of-plane anisotropy changes sign when the magnetic easy axis flips from in-plane to out-of-plane. The experimental results for the magnetic anisotropy are quantitatively compared with calculations of the free energy based on a mean-field Zener model. An almost perfect agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grown samples. In addition, magnetostriction constants are derived from the anisotropy data.
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Submitted 9 April, 2009;
originally announced April 2009.
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Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
Authors:
W. Limmer,
J. Daeubler,
L. Dreher,
M. Glunk,
W. Schoch,
S. Schwaiger,
R. Sauer
Abstract:
The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually varied from compressive to tensile using (In,Ga)As templates with different In concentrations. Analytical expressions for the resistivities are derived from a s…
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The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually varied from compressive to tensile using (In,Ga)As templates with different In concentrations. Analytical expressions for the resistivities are derived from a series expansion of the resistivity tensor with respect to the direction cosines of the magnetization. In order to quantitatively model the experimental data, terms up to the fourth order have to be included. The expressions derived are generally valid for any single-crystalline cubic and tetragonal ferromagnet and apply to arbitrary surface orientations and current directions. The model phenomenologically incorporates the longitudinal and transverse anisotropic magnetoresistance as well as the anomalous Hall effect. The resistivity parameters obtained from a comparison between experiment and theory are found to systematically vary with the strain in the layer.
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Submitted 19 February, 2008;
originally announced February 2008.
