-
Ultrahigh magnetic field spectroscopy reveals the band structure of the 3D topological insulator Bi$_2$Se$_3$
Authors:
A. Miyata,
Z. Yang,
A. Surrente,
O. Drachenko,
D. K. Maude,
O. Portugall,
L. B. Duffy,
T. Hesjedal,
P. Plochocka,
R. J. Nicholas
Abstract:
We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear.…
▽ More
We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear. At even higher energies around 0.99 and 1.6 eV, new additional strong absorptions are observed with a temperature and magnetic-field dependence which suggest that they originate from higher band gaps. Spin orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV.
△ Less
Submitted 2 June, 2017;
originally announced June 2017.
-
Temperature-dependent magnetospectroscopy of HgTe quantum wells
Authors:
A. V. Ikonnikov,
S. S. Krishtopenko,
O. Drachenko,
M. Goiran,
M. S. Zholudev,
V. V. Platonov,
Yu. B. Kudasov,
A. S. Korshunov,
D. A. Maslov,
I. V. Makarov,
O. M. Surdin,
A. V. Philippov,
M. Marcinkiewicz,
S. Ruffenach,
F. Teppe,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretsky,
V. I. Gavrilenko
Abstract:
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of La…
▽ More
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.
△ Less
Submitted 30 August, 2016; v1 submitted 17 June, 2016;
originally announced June 2016.
-
High intensity study of THz detectors based on field effect transistors
Authors:
Dmytro B. But,
Christoph Drexler,
Mykola V. Sakhno,
Nina Dyakonova,
Oleksiy Drachenko,
Alexey Gutin,
Fiodor F. Sizov,
Sergey D. Ganichev,
Wojciech Knap
Abstract:
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of…
▽ More
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2).
△ Less
Submitted 2 February, 2014;
originally announced February 2014.
-
Identification of main contributions to conductivity of epitaxial InN
Authors:
T. A. Komissarova,
O. Drachenko,
V. N. Jmerik,
X. Wang,
A. Yoshikawa,
S. V. Ivanov
Abstract:
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, ne…
▽ More
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films.
△ Less
Submitted 26 May, 2011;
originally announced May 2011.
-
Intersubband magnetophonon resonances in quantum cascade structures
Authors:
D. Smirnov,
O. Drachenko,
J. Leotin,
H. Page,
C. Becker,
C. Sirtori,
V. Apalkov,
T. Chakraborty
Abstract:
We report on our magnetotransport measurements of GaAs/GaAlAs quantum cascade structures in a magnetic field of up to 62 T. We observe novel quantum oscillations in tunneling current that are periodic in reciprocal magnetic field. We explain these oscillations as intersubband magnetophonon resonance due to electron relaxation by emission of either single optical or acoustic phonons. Our work als…
▽ More
We report on our magnetotransport measurements of GaAs/GaAlAs quantum cascade structures in a magnetic field of up to 62 T. We observe novel quantum oscillations in tunneling current that are periodic in reciprocal magnetic field. We explain these oscillations as intersubband magnetophonon resonance due to electron relaxation by emission of either single optical or acoustic phonons. Our work also provides a non-optical in situ measurement of intersubband separations in quantum cascade structures.
△ Less
Submitted 6 September, 2001;
originally announced September 2001.
