Showing 1–13 of 13 results for author: Drabińska, A

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

Authors: Jakub Iwański, Jakub Kierdaszuk, Arkadiusz Ciesielski, Johannes Binder, Aneta Drabińska, Andrzej Wysmołek

Abstract: A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study… ▽ More A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 $^\circ$C to 1200 $^\circ$C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors. △ Less

Submitted 22 March, 2024; originally announced March 2024.

Electrostatically-induced strain of graphene on GaN nanorods

Authors: Jakub Kierdaszuk, Rafał Bożek, Tomasz Stefaniuk, Ewelina Możdzyńska, Karolina Piętak-Jurczak, Sebastian Złotnik, Vitaly Zubialevich, Aleksandra Przewłoka, Aleksandra Krajewska, Wawrzyniec Kaszub, Marta Gryglas-Borysiewicz, Andrzej Wysmołek, Johannes Binder, Aneta Drabińska

Abstract: Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman… ▽ More Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices. △ Less

Submitted 6 July, 2023; originally announced July 2023.

Electron Paramagnetic Resonance of $V_{N}-V_{Ga}$ complex in $BGaN$

Authors: Jakub Kierdaszuk, Ewelina. B. Możdżyńska, Aneta Drabińska, Andrzej Wysmołek, Jacek M. Baranowski

Abstract: Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence… ▽ More Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence of EPR intensities is compared with the results of High-Resolution Photoinduced Transient Spectroscopy (HRPITS). This allows to link particular traps with EPR signal. The activation energies of these traps are consistent with the theoretical position of the $V_{N}-V_{Ga}$ complex. Thermal annihilation of the EPR signal with 30 meV activation energy corresponds to shallow donor ionization. The model explaining light-induced EPR signal involving redistribution of electrons between deep and shallow donors mediated by photoionization to the conduction band is proposed. △ Less

Submitted 6 April, 2023; originally announced April 2023.

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

Authors: Jakub Kierdaszuk, Paweł Dąbrowski, Maciej Rogala, Paweł Krukowski, Aleksandra Przewłoka, Aleksandra Krajewska, Wawrzyniec Kaszub, Marta Sobanska, Zbigniew R. Zytkiewicz, Vitaly Z. Zubialevich, Paweł J. Kowalczyk, Andrzej Wysmołek, Johannes Binder, Aneta Drabińska

Abstract: Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribut… ▽ More Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters. △ Less

Submitted 31 July, 2021; originally announced August 2021.

Highly effective gating of graphene on GaN

Authors: Jakub Kierdaszuk, Ewelina Rozbiegała, Karolina Piętak, Sebastian Złotnik, Aleksandra Przewłoka, Aleksandra Krajewska, Wawrzyniec Kaszub, Maria Kamińska, Andrzej Wysmołek, Johannes Binder, Aneta Drabińska

Abstract: By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct… ▽ More By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromap** shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime. △ Less

Submitted 13 April, 2021; v1 submitted 4 February, 2021; originally announced February 2021.

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, Zbigniew R. Zytkiewicz, Marta Sobanska, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on… ▽ More We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while higher number of nanowires in contact with graphene locally reduce the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. Analysis of intensity ratios of Raman G, D and D' bands enable to trace how nanowire substrate impacts the defect concentration and type. The lowest concentration of defects is observed for graphene deposited on nanowires of the lowest density. Contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Surface-enhanced Raman scattering in graphene deposited on Al$_x$Ga$_{1-x}$N/GaN axial heterostructure nanowires

Authors: Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski, Rafał Bożek, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, Marta Sobanska, Zbigniew R. Zytkiewicz, Grzegorz Kowalski, Tomasz J. Antosiewicz, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in gra… ▽ More The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement. △ Less

Submitted 6 August, 2018; originally announced August 2018.

Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array

Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek, Justyna Grzonka, Aleksandra Krajewska, Zbigniew R. Zytkiewicz, Marta Sobanska, Kamil Klosek, Agnieszka Wołoś, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is obse… ▽ More A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered. △ Less

Submitted 7 November, 2017; v1 submitted 14 September, 2017; originally announced September 2017.

Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction

Authors: J. Papierska, A. Ciechan, P. Bogusławski, M. Boshta, M. M. Gomaa, E. Chikoidze, Y. Dumont, A. Drabińska, H. Przybylińska, A. Gardias, J. Szczytko, A. Twardowski, M. Tokarczyk, G. Kowalski, B. Witkowski, K. Sawicki, W. Pacuski, M. Nawrocki, J. Suffczyński

Abstract: Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient… ▽ More Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe do** with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue. △ Less

Submitted 2 December, 2016; v1 submitted 3 March, 2016; originally announced March 2016.

Comments: 17 pages, 10 figures

Journal ref: Phys. Rev. B 94, 224414 (2016)

Enhanced Raman scattering and weak localization in graphene deposited on GaN nanowires

Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Aneta Drabińska, Krzysztof Korona, Agnieszka Wołoś, Maria Kamińska, Andrzej Wysmołek, Iwona Pasternak, Aleksandra Krajewska, Krzysztof Pakuła, Zbigniew R. Zytkiewicz

Abstract: The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the de… ▽ More The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed to determine carrier concentration fluctuations induced by GaN nanowires. Comparison of Raman scattering spatial intensity maps and the images obtained using scanning electron microscope led to conclusion that vertically aligned GaN nanowires induce a homogenous strain, substantial spatial modulation of carrier concentration in graphene and unexpected homogenous distribution of defects created by interaction with nanowires. The analysis of the D and D' peak intensity ratio showed that interaction with nanowires also changes the probability of scattering on different types of defects. The Raman studies were correlated with weak localization effect measured using microwave induced contactless electron transport. Temperature dependence of weak localization signal showed electron-electron scattering as a main decoherence mechanism with additional, temperature independent scattering reducing coherence length. We attributed it to the interaction of electrons in graphene with charges present on the top of nanowires due to spontaneous and piezoelectric polarization of GaN. Thus, nanowires act as antennas and generate enhanced near field which can explain the observed large enhancement of Raman scattering intensity. △ Less

Submitted 24 September, 2015; v1 submitted 31 May, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 92, 195403 (2015)

Electron Paramagnetic Resonance of Mn in Bi$_2$Se$_3$ Topological Insulator

Authors: Agnieszka Wolos, Aneta Drabinska, Maria Kaminska, Andrzej Hruban, Stanislawa G. Strzelecka, Andrzej Materna, Miroslaw Piersa, Magdalena Romaniec, Ryszard Diduszko

Abstract: Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the… ▽ More Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the energy gap of Bi$_2$Se$_3$. The electron paramagnetic resonance spectrum of Mn$^2$$^+$ in Bi$_2$Se$_3$ is characterized by the isotropic g-factor |g| = 1.91 and large axial parameter D = -4.20 GHz x h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz x h and 16.8 GHz x h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi$_2$Se$_3$ acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity. △ Less

Submitted 5 December, 2014; originally announced December 2014.

Landau level spectroscopy of relativistic fermions with low Fermi velocity in Bi2Te3 three-dimensional topological insulator

Authors: A. Wolos, S. Szyszko, A. Drabinska, M. Kaminska, S. G. Strzelecka, A. Hruban, A. Materna, M. Piersa

Abstract: X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas osc… ▽ More X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas oscillations by contactless microwave spectroscopy allows determination of the Fermi level position. Occupation of topological surface states depends not only on bulk Fermi level but also on the surface band bending. △ Less

Submitted 13 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. Lett. (2012)

Rashba field in GaN

Authors: A. Wolos, Z. Wilamowski, C. Skierbiszewski, A. Drabinska, B. Lucznik, I. Grzegory, S. Porowski

Abstract: We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field s… ▽ More We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface. △ Less

Submitted 22 December, 2010; originally announced December 2010.

Journal ref: Physica B 406, 2548 (2011)