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Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate
Authors:
Dominik Bischoff,
Tobias Krähenmann,
Susanne Dröscher,
Michelle A. Gruner,
Clément Barraud,
Thomas Ihn,
Klaus Ensslin
Abstract:
We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of th…
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We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.
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Submitted 5 February, 2013;
originally announced February 2013.
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Electron flow in split-gated bilayer graphene
Authors:
S. Dröscher,
C. Barraud,
K. Watanabe,
T. Taniguchi,
T. Ihn,
K. Ensslin
Abstract:
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by electrostatic gating. By comparing the transconductance data recorded for different top gate geometries - continuous barrier and split-gate - the observed transpo…
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We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by electrostatic gating. By comparing the transconductance data recorded for different top gate geometries - continuous barrier and split-gate - the observed transport features for the split-gate can be attributed to interference effects inside the narrow opening.
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Submitted 20 July, 2012;
originally announced July 2012.
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High-frequency gate manipulation of a bilayer graphene quantum dot
Authors:
S. Dröscher,
J. Güttinger,
T. Mathis,
B. Batlogg,
T. Ihn,
K. Ensslin
Abstract:
We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the prese…
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We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.
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Submitted 19 June, 2012;
originally announced June 2012.
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Coulomb Gap in Graphene Nanoribbons
Authors:
S. Dröscher,
H. Knowles,
Y. Meir,
K. Ensslin,
T. Ihn
Abstract:
We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length, electron density, and temperature, single or multiple quan- tum dots dominate the conductance. Between conductance resonances cotunneling transport at the lowest tempe…
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We investigate the density and temperature-dependent conductance of graphene nanoribbons with varying aspect ratio. Transport is dominated by a chain of quantum dots forming spontaneously due to disorder. Depending on ribbon length, electron density, and temperature, single or multiple quan- tum dots dominate the conductance. Between conductance resonances cotunneling transport at the lowest temperatures turns into activated transport at higher temperatures. The density-dependent activation energy resembles the Coulomb gap in a quantitative manner. Individual resonances show signatures of multi-level transport in some regimes, and stochastic Coulomb blockade in others.
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Submitted 8 October, 2011; v1 submitted 21 July, 2011;
originally announced July 2011.
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Raman spectroscopy on etched graphene nanoribbons
Authors:
Dominik Bischoff,
Johannes Güttinger,
Susanne Dröscher,
Thomas Ihn,
Klaus Ensslin,
Christoph Stampfer
Abstract:
We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the w…
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We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.
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Submitted 5 May, 2011;
originally announced May 2011.
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Coherent Electron-Phonon Coupling in Tailored Quantum Systems
Authors:
P. Roulleau,
S. Baer,
T. Choi,
F. Molitor,
J. Güttinger,
T. Müller,
S. Dröscher,
K. Ensslin,
T. Ihn
Abstract:
The coupling between a two-level system and its environment leads to decoherence. Within the context of coherent manipulation of electronic or quasiparticle states in nanostructures, it is crucial to understand the sources of decoherence. Here, we study the effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot. Our measurements reveal oscillations of the double q…
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The coupling between a two-level system and its environment leads to decoherence. Within the context of coherent manipulation of electronic or quasiparticle states in nanostructures, it is crucial to understand the sources of decoherence. Here, we study the effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot. Our measurements reveal oscillations of the double quantum dot current periodic in energy detuning between the two levels. These periodic peaks are more pronounced in the nanowire than in graphene, and disappear when the temperature is increased. We attribute the oscillations to an interference effect between two alternative inelastic decay paths involving acoustic phonons present in these materials. This interpretation predicts the oscillations to wash out when temperature is increased, as observed experimentally.
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Submitted 19 April, 2011;
originally announced April 2011.
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Highly Tunable Hybrid Quantum Dots with Charge Detection
Authors:
C. Rössler,
B. Küng,
S. Dröscher,
T. Choi,
T. Ihn,
K. Ensslin,
M. Beck
Abstract:
In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tunin…
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In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local Schottky-gates, these criteria are nicely fulfilled in the resulting hybrid device. To this end, a quantum dot with adjacent charge detector is defined. After tuning the quantum dot to contain only a single electron, we are able to observe the charge detector signal of the quantum dot state for a wide range of tunnel couplings.
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Submitted 14 September, 2010;
originally announced September 2010.
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Observation of excited states in a graphene double quantum dot
Authors:
F. Molitor,
H. Knowles,
S. Dröscher,
U. Gasser,
T. Choi,
P. Roulleau,
J. Güttinger,
A. Jacobsen,
C. Stampfer,
K. Ensslin,
T. Ihn
Abstract:
We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel b…
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We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.
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Submitted 26 January, 2010;
originally announced January 2010.
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Quantum capacitance and density of states of graphene
Authors:
S. Dröscher,
P. Roulleau,
F. Molitor,
P. Studerus,
C. Stampfer,
T. Ihn,
K. Ensslin
Abstract:
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be…
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We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.
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Submitted 26 January, 2010;
originally announced January 2010.
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Transport through graphene double dots
Authors:
F. Molitor,
S. Dröscher,
J. Güttinger,
A. Jacobsen,
C. Stampfer,
T. Ihn,
K. Ensslin
Abstract:
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
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Submitted 5 May, 2009;
originally announced May 2009.
