Showing 1–15 of 15 results for author: Dougherty, D B

Map** Interfacial Energetic Landscape in Organic Solar Cells Reveals Pathways to Reducing Nonradiative Losses

Authors: Gaurab J. Thapa, Mihirsinh Chauhan, Jacob P. Mauthe, Daniel B. Dougherty, Aram Amassian

Abstract: Bulk heterojunction (BHJ) organic solar cells have made remarkable inroads towards 20% efficiency, yet nonradiative recombination losses (ΔVnr) remain high compared to silicon and perovskite photovoltaics. Interfaces buried within BHJ blends hold the key to recombination losses but access to their energetic landscape underpinning charge transfer (CT) states and their disorder remain elusive. Here,… ▽ More Bulk heterojunction (BHJ) organic solar cells have made remarkable inroads towards 20% efficiency, yet nonradiative recombination losses (ΔVnr) remain high compared to silicon and perovskite photovoltaics. Interfaces buried within BHJ blends hold the key to recombination losses but access to their energetic landscape underpinning charge transfer (CT) states and their disorder remain elusive. Here, we reveal the energetic landscape and CT state manifold of modern BHJs with both spatial and energetic resolutions and link the offset between singlet (ES1) and CT energy (ES1-CT) and interfacial energetic disorder with ΔVnr. We do so by locally map** the energy distributions of modern PM6-based BHJs with IT4F, Y6 and PC71BM acceptors and combine it, for the first time, with sensitive EQE measurements, to visualize and quantify donor (D) and acceptor (A) energetics at interfaces and associated them with CT states within a modified Marcus framework. A key new ability is the identification of the specific BHJ interfaces associated with the CT manifold, including where the lowest energy CT states reside. Moreover, we quantify energy levels and electronic disorders directly at these and other interfaces and connect these contributions to the energy losses. We delineate the influences of S1-CT offset and interfacial energetic disorder on ΔVnr across morphologically varied BHJs. Our results show both factors influencing energy losses in different ways. We demonstrate that PM6:Y6 can achieve low ΔVnr by forming a nominally sharp D/A interface with exceptionally low interfacial disorder via judicious processing combined with a low S1 to CT offset. This provides a design rule to minimize ΔVnr for modern NFAs: sharp D/A interfaces with low S1 to CT offset exhibiting minimal interfacial disorder. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Comments: Manuscript: 30 pages, 4 figures, 2 tables Supplementary information: 41 pages, 24 figures, 7 tables

Ligand Field Exciton Annihilation in Bulk CrCl3

Authors: Samanvitha Sridhar, Ario Khansari, Shaun O'Donnell, Alexandra T. Barth, Evgeny O. Danilov, Felix N. Castellano, Paul A. Maggard, Daniel B. Dougherty

Abstract: The layered van der Waals material CrCl3 exhibits very strongly bound ligand field excitons that control optoelectronic applications and are connected with magnetic ordering by virtue of their d-orbital origin. Time-resolved photoluminescence of these exciton populations at room temperature shows that their relaxation is dominated by exciton-exciton annihilation and that the spontaneous decay life… ▽ More The layered van der Waals material CrCl3 exhibits very strongly bound ligand field excitons that control optoelectronic applications and are connected with magnetic ordering by virtue of their d-orbital origin. Time-resolved photoluminescence of these exciton populations at room temperature shows that their relaxation is dominated by exciton-exciton annihilation and that the spontaneous decay lifetime is very long. These observations allow the rough quantification of the exciton annihilation rate constant and contextualization in light of a recent theory of universal scaling behavior of the annihilation process. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Growth-Temperature Dependence of Conductivity at the LaCrO$_3$/SrTiO$_3$ (001) Interface

Authors: A. H. Al-Tawhid, J. R. Frick, D. B. Dougherty, D. P. Kumah

Abstract: The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the… ▽ More The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions. A high sheet carrier concentration of 2x10$^{16}$ cm$^{-2}$ and mobility of 30,000 cm$^2$/V s is reported for the metallic interfaces, which is similar to the quasi-two dimensional gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface with similar growth conditions. High-resolution synchrotron X-ray-based structural determination of the atomic-scale structures of both metallic and insulating LCO/STO interfaces show chemical intermixing and an interfacial lattice expansion. Angle resolved photoemission spectroscopy of 2 and 4 uc metallic LCO/STO shows no intensity near the Fermi level indicating that the conducting region is occurring deep enough in the substrate to be inaccessible to photoemission spectroscopy. Post-growth annealing in flowing oxygen causes a reduction in the sheet carrier concentration and mobility for the metallic interface while annealing the insulating interface at high temperatures and low oxygen partial pressures results in metallicity. These results highlight the critical role of defects related to oxygen vacancies on the creation of mobile charge carriers at the LCO/STO heterointerface. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Journal ref: .Journal of Vacuum Science & Technology A 37, 021102 (2019)

Nonequilibrium Electron Dynamics In Pump-Probe Spectroscopy: Role Of Excited Phonon Populations

Authors: O. Abdurazakov, D. Nevola, A. Rustagi, J. K. Freericks, D. B. Dougherty, A. F. Kemper

Abstract: We study the role of excited phonon populations in the relaxation rates of nonequilibrium electrons using a nonequilibrium Green's function formalism. The transient modifications in the phononic properties are accounted for by self-consistently solving the Dyson equation for the electron and phonon Green's functions. The pump induced changes manifest in both the electronic and phononic spectral fu… ▽ More We study the role of excited phonon populations in the relaxation rates of nonequilibrium electrons using a nonequilibrium Green's function formalism. The transient modifications in the phononic properties are accounted for by self-consistently solving the Dyson equation for the electron and phonon Green's functions. The pump induced changes manifest in both the electronic and phononic spectral functions. We find that the excited phonon populations suppress the decay rates of nonequilibrium electrons due to enhanced phonon absorption. The increased phonon occupation also sets the nonequilibrium decay rates and the equilibrium scattering rates apart. The decay rates are found to be time-dependent, and this is illustrated in the experimentally observed population decay of photoexcited $\mathrm{Bi}_{1.5}\mathrm{Sb}_{0.5} \mathrm{Te}_{1.7}\mathrm{Se}_{1.3}$. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. B 98, 245110 (2018)

Unexpected Structures for Intercalation of Sodium in Epitaxial Graphene-SiC Interfaces

Authors: Andreas Sandin, Thushari Jayasekera, J. E., Rowe, Ki Wook Kim, M. Buongiorno Nardelli, Daniel B. Dougherty

Abstract: We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes the graphene. It intercalates in-between single-layer graphene and the carbon-rich interfacial layer. It also penetrates beneath the interfacial layer and deco… ▽ More We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes the graphene. It intercalates in-between single-layer graphene and the carbon-rich interfacial layer. It also penetrates beneath the interfacial layer and decouples it to form a second graphene layer. This decoupling is accelerated by annealing and is verified by direct Na deposition onto the interface layer. Our observations show that intercalation in graphene is fundamentally different than in graphite and is a versatile means of electronic control. △ Less

Submitted 29 November, 2011; originally announced November 2011.

Comments: 10 pages text, 2 pages, references, and 4 figure pages

The effect of p-type do** on the oxidation of H-Si(111) studied by second-harmonic generation

Authors: Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu

Abstract: Atomic force microscopy and second-harmonic generation data show that boron do** enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. Atomic force microscopy and second-harmonic generation data show that boron do** enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the reactivity of the Si-H up bonds than that of the Si-Si back bonds. △ Less

Submitted 7 September, 2011; originally announced September 2011.

Spatial First-passage Statistics of Al/Si(111)-(root3 x root3) Step Fluctuations

Authors: B. R. Conrad, W. G. Cullen, D. B. Dougherty, I. Lyubinetsky, E. D. Williams

Abstract: Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and s… ▽ More Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and survival probabilities are temperature independent. The power law functional form for spatial persistence probabilities is confirmed and the symmetric spatial persistence exponent is measured to be theta = 0.498 +/- 0.062 in agreement with the theoretical prediction theta = 1/2. The survival probability is found to scale directly with y/L, where y is the distance along the step edge. The form of the survival probabilities agree quantitatively with the theoretical prediction, which yields exponential decay in the limit of small y/L. The decay constant is found experimentally to be ys/L= 0.076 +/- 0.033 for y/L <= 0.2. △ Less

Submitted 2 October, 2008; originally announced October 2008.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. E 75, 021603 (2007)

Persistence and survival in equilibrium step fluctuations

Authors: M. Constantin, C. Dasgupta, S. Das Sarma, D. B. Dougherty, E. D. Williams

Abstract: Results of analytic and numerical investigations of first-passage properties of equilibrium fluctuations of monatomic steps on a vicinal surface are reviewed. Both temporal and spatial persistence and survival probabilities, as well as the probability of persistent large deviations are considered. Results of experiments in which dynamical scanning tunneling microscopy is used to evaluate these f… ▽ More Results of analytic and numerical investigations of first-passage properties of equilibrium fluctuations of monatomic steps on a vicinal surface are reviewed. Both temporal and spatial persistence and survival probabilities, as well as the probability of persistent large deviations are considered. Results of experiments in which dynamical scanning tunneling microscopy is used to evaluate these first-passage properties for steps with different microscopic mechanisms of mass transport are also presented and interpreted in terms of theoretical predictions for appropriate models. Effects of discrete sampling, finite system size and finite observation time, which are important in understanding the results of experiments and simulations, are discussed. △ Less

Submitted 28 February, 2007; originally announced February 2007.

Comments: 30 pages, 12 figures, review paper for a special issue of JSTAT

Correlations in nano-scale step fluctuations: comparison of simulation and experiments

Authors: F. Szalma, D. B. Dougherty, M. Degawa, Ellen D. Williams, Michael I. Haftel, T. L. Einstein

Abstract: We analyze correlations in step-edge fluctuations using the Bortz-Kalos-Lebowitz kinetic Monte Carlo algorithm, with a 2-parameter expression for energy barriers, and compare with our VT-STM line-scan experiments on spiral steps on Pb(111). The scaling of the correlation times gives a dynamic exponent confirming the expected step-edge-diffusion rate-limiting kinetics both in the MC and in the ex… ▽ More We analyze correlations in step-edge fluctuations using the Bortz-Kalos-Lebowitz kinetic Monte Carlo algorithm, with a 2-parameter expression for energy barriers, and compare with our VT-STM line-scan experiments on spiral steps on Pb(111). The scaling of the correlation times gives a dynamic exponent confirming the expected step-edge-diffusion rate-limiting kinetics both in the MC and in the experiments. We both calculate and measure the temperature dependence of (mass) transport properties via the characteristic hop** times and deduce therefrom the notoriously-elusive effective energy barrier for the edge fluctuations. With a careful analysis we point out the necessity of a more complex model to mimic the kinetics of a Pb(111) surface for certain parameter ranges. △ Less

Submitted 11 January, 2006; originally announced January 2006.

Comments: 10 pages, 9 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 73, 115413 [10 pp.] (2006)

Spiral Evolution in a Confined Geometry

Authors: Madhav Ranganathan, D. B. Dougherty, W. G. Cullen, Tong Zhao, John D. Weeks, E. D. Williams

Abstract: Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in… ▽ More Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in classical models of spiral growth, with boundary conditions fixing the dislocation core and regions of the step lying along the outer facet edge. △ Less

Submitted 21 November, 2005; originally announced November 2005.

Comments: 4 pages, 3 figures, to be published in Physical Review Letters

Sampling Time Effects for Persistence and Survival in Step Structural Fluctuations

Authors: D. B. Dougherty, C. Tao, O. Bondarchuk, W. G. Cullen, E. D. Williams, M. Constantin, C. Dasgupta, S. Das Sarma

Abstract: The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated S… ▽ More The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated Si(111) over the temperature range 770K - 970K. Although the fundamental time constant for step fluctuations on Ag and Al/Si varies by orders of magnitude over the temperature ranges of measurement, no dependence of the persistence amplitude on temperature is observed. Instead, the persistence probability is found to scale directly with t/Dt where Dt is the time interval used for sampling. Survival probabilities show a more complex scaling dependence which includes both the sampling interval and the total measurement time tm. Scaling with t/Dt occurs only when Dt/tm is a constant. We show that this observation is equivalent to theoretical predictions that the survival probability will scale as Dt/L^z, where L is the effective length of a step. This implies that the survival probability for large systems, when measured with fixed values of tm or Dt should also show little or no temperature dependence. △ Less

Submitted 21 October, 2005; v1 submitted 4 October, 2004; originally announced October 2004.

Comments: 27 pages, 10 figures

Journal ref: Phys. Rev. E 71, 021602 (2005)

Distinguishing step relaxation mechanisms via pair correlation functions

Authors: D. B. Dougherty, I. Lyubinetsky, T. L. Einstein, E. D. Williams

Abstract: Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows n… ▽ More Theoretical predictions of coupled step motion are tested by direct STM measurement of the fluctuations of near-neighbor pairs of steps on Si(111)-root3 x root3 R30 - Al at 970K. The average magnitude of the pair-correlation function is within one standard deviation of zero, consistent with uncorrelated near-neighbor step fluctuations. The time dependence of the pair-correlation function shows no statistically significant agreement with the predicted t^1/2 growth of pair correlations via rate-limiting atomic diffusion between adjacent steps. The physical considerations governing uncorrelated step fluctuations occurring via random attachment/detachment events at the step edge are discussed. △ Less

Submitted 20 August, 2004; originally announced August 2004.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. B 70, 235422 [5 pp.] (2004)

Correlation Time for Step Structural Fluctuations

Authors: O. Bondarchuk, D. B. Dougherty, M. Degawa, E. D. Williams, M. Constantin, C. Dasgupta, S. DasSarma

Abstract: Time dependent STM has been used to evaluate step fluctuations as a function of temperature (300-450 K) on Ag(111) films grown on mica. The temporal correlation function scales as a power law in time, t^1/n with measured values of 1/n varying over a range of 0.19 pm 0.04 to 0.29 pm 0.04 with no dependence on temperature. The average value of 1/n = 0.24 pm 0.01 is consistent with step-edge diffus… ▽ More Time dependent STM has been used to evaluate step fluctuations as a function of temperature (300-450 K) on Ag(111) films grown on mica. The temporal correlation function scales as a power law in time, t^1/n with measured values of 1/n varying over a range of 0.19 pm 0.04 to 0.29 pm 0.04 with no dependence on temperature. The average value of 1/n = 0.24 pm 0.01 is consistent with step-edge diffusion limited fluctuations (n = z = 4, conserved noise). The magnitude of the time correlation function and the width of the fluctuations both scale with temperature with the same apparent activation energy of Eeff = 0.21 pm 0.02 eV, indicating that the correlation time is at most weakly temperature dependent. Direct analysis of the autocorrelation function confirms that the correlation time is at most weakly temperature dependent, and thus the apparent correlation length is strongly temperature dependent. This behavior can be reproduced by assuming that the apparent correlation length is governed by the longest wavelength of step fluctuations that can be sampled in the measurement time interval. Evaluation of the correlation time for previous measurements for Al/Si(111) (z =2) yields the same conclusion about measurement time interval. In both cases the ratio of the measurement time to the effective correlation time is on the order of 10. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Infinite family of persistence exponents for interface fluctuations

Authors: M. Constantin, S. Das Sarma, C. Dasgupta, O. Bondarchuk, D. B. Dougherty, E. D. Williams

Abstract: We show experimentally and theoretically that the persistence of large deviations in equilibrium step fluctuations is characterized by an infinite family of independent exponents. These exponents are obtained by carefully analyzing dynamical experimental images of Al/Si(111) and Ag(111) equilibrium steps fluctuating at high (970K) and low (320K) temperatures respectively, and by quantitatively i… ▽ More We show experimentally and theoretically that the persistence of large deviations in equilibrium step fluctuations is characterized by an infinite family of independent exponents. These exponents are obtained by carefully analyzing dynamical experimental images of Al/Si(111) and Ag(111) equilibrium steps fluctuating at high (970K) and low (320K) temperatures respectively, and by quantitatively interpreting our observations on the basis of the corresponding coarse-grained discrete and continuum theoretical models for thermal surface step fluctuations under attachment/detachment (``high-temperature'') and edge-diffusion limited kinetics (``low-temperature'') respectively. △ Less

Submitted 27 February, 2004; v1 submitted 11 March, 2003; originally announced March 2003.

Comments: LaTeX, 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 91, 086103 (2003)

Experimental Persistence Probability for Fluctuating Steps

Authors: D. B. Dougherty, I. Lyubinetsky, E. D. Williams, M. Constantin, C. Dasgupta, S. Das Sarma

Abstract: The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step… ▽ More The persistence behavior for fluctuating steps on the $Si(111)$ $(\sqrt3 \times \sqrt3)R30^{0} - Al$ surface was determined by analyzing time-dependent STM images for temperatures between 770 and 970K. The measured persistence probability follows a power law decay with an exponent of $θ=0.77 \pm 0.03$. This is consistent with the value of $θ= 3/4$ predicted for attachment/detachment limited step kinetics. If the persistence analysis is carried out in terms of return to a fixed reference position, the measured persistence probability decays exponentially. Numerical studies of the Langevin equation used to model step motion corroborate the experimental observations. △ Less

Submitted 16 September, 2002; v1 submitted 4 September, 2002; originally announced September 2002.

Comments: LaTeX, 11 pages, 4 figures, minor changes in References section

Journal ref: Phys.Rev.Lett. 89, 136102 (2002)