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Microwave response of interacting oxide two-dimensional electron systems
Authors:
D. Tabrea,
I. A. Dmitriev,
S. I. Dorozhkin,
B. P. Gorshunov,
A. V. Boris,
Y. Kozuka,
A. Tsukazaki,
M. Kawasaki,
K. von Klitzing,
J. Falson
Abstract:
We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density s…
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We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids.
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Submitted 24 June, 2020;
originally announced June 2020.
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Characterization of individual layers in a bilayer electron system produced in a wide quantum well
Authors:
S. I. Dorozhkin,
A. A. Kapustin,
I. B. Fedorov,
V. Umansky,
K. von Klitzing,
J. H. Smet
Abstract:
Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of…
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Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.
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Submitted 29 December, 2017;
originally announced December 2017.
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Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States
Authors:
S. I. Dorozhkin,
A. A. Kapustin,
V. Umansky,
K. von Klitzing,
J. H. Smet
Abstract:
In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system…
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In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations.
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Submitted 5 September, 2016;
originally announced September 2016.
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Negative conductivity and anomalous screening in two-dimensional electron systems subjected to microwave radiation
Authors:
S. I. Dorozhkin,
I. A. Dmitriev,
A. D. Mirlin
Abstract:
A 2D electron system in a quantized magnetic field can be driven by microwave radiation into a non-equilibrium state with strong magnetooscillations of the dissipative conductivity. We demonstrate that in such system a negative conductivity can coexist with a positive diffusion coefficient. In a finite system, solution of coupled electrostatic and linear transport problems shows that the diffusion…
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A 2D electron system in a quantized magnetic field can be driven by microwave radiation into a non-equilibrium state with strong magnetooscillations of the dissipative conductivity. We demonstrate that in such system a negative conductivity can coexist with a positive diffusion coefficient. In a finite system, solution of coupled electrostatic and linear transport problems shows that the diffusion can stabilize a state with negative conductivity. Specifically, this happens when the system size is smaller than the absolute value of the non-equilibrium screening length that diverges at the point where the conductivity changes sign. We predict that a negative resistance can be measured in such a state. Further, for a non-zero difference between the work functions of two contacts, we explore the distribution of the electrostatic potential and of the electron density in the sample. We show that in the diffusion-stabilized regime of negative conductivity the system splits into two regions with opposite directions of electric field. This effect is a precursor of the domain structure that has been predicted to emerge spontaneously in the microwave-induced zero-resistance states.
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Submitted 29 July, 2011;
originally announced July 2011.
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Theory of the microwave-induced photocurrent and photovoltage magnetooscillations in a spatially non-uniform 2D electron gas
Authors:
I. A. Dmitriev,
S. I. Dorozhkin,
A. D. Mirlin
Abstract:
Recent experiment [S.I. Dorozhkin et al., Phys. Rev. Lett. 102, 036602 (2009)] on quantum Hall structures with strongly asymmetric contact configuration discovered microwave-induced photocurrent and photovoltage magnetooscillations in the absence of dc driving. We show that in an irradiated sample the Landau quantization leads to violation of the Einstein relation between the dc conductivity and…
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Recent experiment [S.I. Dorozhkin et al., Phys. Rev. Lett. 102, 036602 (2009)] on quantum Hall structures with strongly asymmetric contact configuration discovered microwave-induced photocurrent and photovoltage magnetooscillations in the absence of dc driving. We show that in an irradiated sample the Landau quantization leads to violation of the Einstein relation between the dc conductivity and diffusion coefficient. Then, in the presence of a built-in electric field in a sample, the microwave illumination causes photo-galvanic signals which oscillate as a function of magnetic field with the period determined by the ratio of the microwave frequency to the cyclotron frequency, as observed in the experiment.
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Submitted 28 September, 2009; v1 submitted 23 June, 2009;
originally announced June 2009.
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Photo-current and photo-voltage oscillations in the two-dimensional electron system: screening and "anti-screening" of a potential profile
Authors:
S. I. Dorozhkin,
I. V. Pechenezhskiy,
L. N. Pfeiffer,
K. W. West,
V. Umansky,
K. von Klitzing,
J. H. Smet
Abstract:
We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave frequency is close to a multiple of the cyclotron resonance frequency. They originate from built-in electric fields due to for instance band bending at contacts. The…
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We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave frequency is close to a multiple of the cyclotron resonance frequency. They originate from built-in electric fields due to for instance band bending at contacts. The oscillations correspond to a suppression (screening) or an enhancement ("anti-screening") of these fields by the photo-excited electrons.
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Submitted 1 July, 2008;
originally announced July 2008.
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Microwave induced magnetoresistance oscillations at the subharmonics of the cyclotron resonance
Authors:
S. I. Dorozhkin,
J. H. Smet,
K. von Klitzing,
L. N. Pfeiffer,
K. W. West
Abstract:
The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without…
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The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without invoking multi-photon absorption processes. The existence of a frequency threshold above which such oscillations disappear lends further support to this explanation.
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Submitted 29 August, 2006;
originally announced August 2006.
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Fractional quantum Hall effect without energy gap
Authors:
S. S. Murzin,
S. I. Dorozhkin,
G. E. Tsydynzhapov,
V. N. Zverev
Abstract:
In the fractional quantum Hall effect regime we measure diagonal ($ρ_{xx}$) and Hall ($ρ_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional mi…
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In the fractional quantum Hall effect regime we measure diagonal ($ρ_{xx}$) and Hall ($ρ_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.
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Submitted 30 March, 2006;
originally announced March 2006.
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Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures
Authors:
S. S. Murzin,
S. I. Dorozhkin,
D. K. Maude,
A. G. M. Jansen
Abstract:
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D e…
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The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σ_{xy},σ_{xx}) point determines a complete flow line.
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Submitted 10 January, 2006; v1 submitted 11 April, 2005;
originally announced April 2005.
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Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions
Authors:
S. I. Dorozhkin,
J. H. Smet,
V. Umansky,
K. von Klitzing
Abstract:
The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30 GHz causes a strong suppression of the resistance over a wide magnetic field range, whereas higher frequencies produce a non-monotonic behavior in the dampin…
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The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30 GHz causes a strong suppression of the resistance over a wide magnetic field range, whereas higher frequencies produce a non-monotonic behavior in the dam** of the Shubnikov-de Haas oscillations. These observations are explained by the creation of a non-equilibrium electron distribution function by microwave induced intra-Landau level transitions.
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Submitted 9 September, 2004;
originally announced September 2004.
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Giant magnetoresistance oscillations caused by cyclotron resonance harmonics
Authors:
S. I. Dorozhkin
Abstract:
For high-mobility two-dimensional electrons at a GaAs/AlGaAs heterojunction, we have studied, both experimentally and theoretically, the recently discovered giant magnetoresistance oscillations with nearly zero resistance in the oscillation minima which appear under microwave radiation. We have proposed a model based on nonequilibrium occupation of Landau levels caused by radiation which describ…
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For high-mobility two-dimensional electrons at a GaAs/AlGaAs heterojunction, we have studied, both experimentally and theoretically, the recently discovered giant magnetoresistance oscillations with nearly zero resistance in the oscillation minima which appear under microwave radiation. We have proposed a model based on nonequilibrium occupation of Landau levels caused by radiation which describes the oscillation picture.
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Submitted 26 April, 2003;
originally announced April 2003.
