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Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride
Authors:
Sinwoo Cho,
Omar Barrera,
Pietro Simeoni,
Emily N. Marshall,
Jack Kramer,
Keisuke Motoki,
Tzu-Hsuan Hsu,
Vakhtang Chulukhadze,
Matteo Rinaldi,
W. Alan Doolittle,
Ruochen Lu
Abstract:
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3Al0.7N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (k2) of 7.0% and quality fa…
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This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3Al0.7N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (k2) of 7.0% and quality factor (Q) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with k2 of 4.0% and Q of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, k2xQ) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods.
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Submitted 6 September, 2023;
originally announced September 2023.
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Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance
Authors:
Md Shafkat Bin Hoque,
Yee Rui Koh,
Kiumars Aryana,
Eric Hoglund,
Jeffrey L. Braun,
David H. Olson,
John T. Gaskins,
Habib Ahmad,
Mirza Mohammad Mahbube Elahi,
Jennifer K. Hite,
Zayd C. Leseman,
W. Alan Doolittle,
Patrick E. Hopkins
Abstract:
Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore…
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Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates typically inaccessible by traditional pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries.
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Submitted 25 February, 2021;
originally announced February 2021.
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Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO$_{3}$
Authors:
M. Brooks Tellekamp,
Joshua C. Shank,
Mark S. Goorsky,
W. Alan Doolittle
Abstract:
Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material qual…
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Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy (MBE) and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°) which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction (XRD) with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy (AFM).
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Submitted 8 October, 2019;
originally announced October 2019.
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Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials
Authors:
M. Brooks Tellekamp,
Joshua C. Shank,
W. Alan Doolittle
Abstract:
The role of stoichiometry and growth temperature in the preferential nucleation of material phases in the Li-Nb-O family are explored yielding an empirical growth phase diagram. It is shown that while single parameter variation often produces multi-phase films, combining substrate temperature control with the previously published lithium flux limited growth allows the repeatable growth of high qua…
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The role of stoichiometry and growth temperature in the preferential nucleation of material phases in the Li-Nb-O family are explored yielding an empirical growth phase diagram. It is shown that while single parameter variation often produces multi-phase films, combining substrate temperature control with the previously published lithium flux limited growth allows the repeatable growth of high quality single crystalline films of many different oxide phases. Higher temperatures (800-1050 °C) than normally used in MBE were necessary to achieve high quality materials. At these temperatures the desorption of surface species is shown to play an important role in film composition. Using this method single phase films of NbO, NbO$_{2}$, LiNbO$_{2}$, Li$_{3}$NbO$_{4}$, LiNbO$_{3}$, and LiNb$_{3}$O$_{8}$ have been achieved in the same growth system, all on c-plane sapphire. Finally, the future of these films in functional oxide heterostructures is briefly discussed.
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Submitted 8 October, 2019;
originally announced October 2019.
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Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing
Authors:
Joshua C. Shank,
M. Brooks Tellekamp,
Matthew J. Wahila,
Sebastian Howard,
Alex S. Weidenbach,
Bill Zivasatienraj,
Louis F. J. Piper,
W. Alan Doolittle
Abstract:
Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect…
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Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb$_{2}$O$_{5-x}$ deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it results from the oxygen deficiencies in the amorphous Nb$_{2}$O$_{5-x}$. Rectification occurs due to a transition from thermionic emission to tunneling current and is present even in thick devices (> 100 nm) due to charge trap** which controls the tunneling distance. The turn-on voltage is linearly proportional to the Schottky barrier height and, in contrast to traditional metal-insulator-metal diodes, is logarithmically proportional to the device thickness. Hysteresis in the I-V curve occurs due to the current limited filling of traps.
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Submitted 8 October, 2019;
originally announced October 2019.
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Quantum-statistical transport phenomena in memristive computing architectures
Authors:
Christopher N. Singh,
Brian A. Crafton,
Mathew P. West,
Alex S. Weidenbach,
Keith T. Butler,
Allan H. MacDonald,
Arjit Raychowdury,
Eric M. Vogel,
W. Alan Doolittle,
L. F. J. Piper,
Wei-Cheng Lee
Abstract:
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filame…
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The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filamentary memristive devices as disordered Anderson systems, the switching characteristics and intrinsic variability arise directly from the universality of electron transport in disordered media. Our framework suggests localization phenomena in nanoscale, solid-state memristive systems are directly linked to circuit level performance. We discuss how quantum conductance fluctuations in the active layer set a lower bound on device variability. This finding implies there is a fundamental quantum limit on the reliability of memristive devices, and electron coherence will play a decisive role in surpassing or maintaining Moore's Law with these systems.
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Submitted 31 May, 2021; v1 submitted 21 August, 2019;
originally announced August 2019.
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Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces
Authors:
Zhe Cheng,
Yee Rui Koh,
Habib Ahmad,
Renjiu Hu,
**g**g Shi,
Michael E. Liao,
Yekan Wang,
Tingyu Bai,
Ruiyang Li,
Eungkyu Lee,
Evan A. Clinton,
Christopher M. Matthews,
Zachary Engel,
Yates,
Tengfei Luo,
Mark S. Goorsky,
William Doolittle,
Zhiting Tian,
Patrick E. Hopkins,
Samuel Graham
Abstract:
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanis…
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A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.
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Submitted 23 September, 2019; v1 submitted 13 June, 2019;
originally announced June 2019.
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Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films
Authors:
Zhe Cheng,
Alex Weidenbach,
Tianli Feng,
M. Brooks Tellekamp,
Sebastian Howard,
Matthew J. Wahila,
Bill Zivasatienraj,
Brian Foley,
Sokrates T. Pantelides,
Louis F. J. Piper,
William Doolittle,
Samuel Graham
Abstract:
Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding…
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Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors.
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Submitted 14 July, 2018;
originally announced July 2018.
