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Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond
Authors:
Andre Chambers,
Daniel J. McCloskey,
Nikolai Dontschuk,
Hassan N. Al Hashem,
Billy J. Murdoch,
Alastair Stacey,
Steven Prawer,
Arman Ahnood
Abstract:
In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from electron emission sources to electrodes for neural interfacing. To tailor their properties for different uses, NCD surfaces can be terminated with various chemical functionalities, in particular hydrogen and oxygen, which shi…
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In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from electron emission sources to electrodes for neural interfacing. To tailor their properties for different uses, NCD surfaces can be terminated with various chemical functionalities, in particular hydrogen and oxygen, which shift the band edge positions and electron affinity values. While the band edge positions of chemically terminated single crystal diamond are well understood, the same is not true for nanocrystalline diamond, which has uncontrolled crystallographic surfaces with a variety of chemical states as well as graphitic grain boundary regions. In this work, the relative band edge positions of as-grown, hydrogen terminated, and oxygen terminated nitrogen-doped ultrananocrystalline diamond (N-UNCD) are determined using ultraviolet photoelectron spectroscopy (UPS), while the band bending is investigated using photoelectrochemical measurements. In contrast to the widely reported negative electrode affinity of hydrogen terminated single crystal diamond, our work demonstrates that hydrogen terminated N-UNCD exhibits a positive electron affinity owing to the increased surface and bulk defect densities. These findings elucidate the marked differences in electrochemical properties of hydrogen and oxygen terminated N-UNCD, such as the dramatic changes in electrochemical capacitance.
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Submitted 20 June, 2024;
originally announced June 2024.
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Methods for color center preserving hydrogen-termination of diamond
Authors:
Daniel J. McCloskey,
Daniel Roberts,
Lila V. H. Rodgers,
Yuri Barsukov,
Igor D. Kaganovich,
David A. Simpson,
Nathalie P. de Leon,
Alastair Stacey,
Nikolai Dontschuk
Abstract:
Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these case…
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Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources which can etch or damage the diamond as well as deposited materials or embedded colour centers. This work explores alternative methods for lower-damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high-purity, non-explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x-ray photoelectron spectroscopy, and comparison of the results to density-functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non-destructive to near-surface ensembles of nitrogen-vacancy centers, in stark contrast to plasma treatments which use heated sample stages.
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Submitted 17 June, 2024;
originally announced June 2024.
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3D-map** and manipulation of photocurrent in an optoelectronic diamond device
Authors:
A. A. Wood,
D. J. McCloskey,
N. Dontschuk,
A. Lozovoi,
R. M. Goldblatt,
T. Delord,
D. A. Broadway,
J. -P. Tetienne,
B. C. Johnson,
K. T. Mitchell,
C. T. -K. Lew,
C. A. Meriles,
A. M. Martin
Abstract:
Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailor…
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Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies.
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Submitted 10 February, 2024;
originally announced February 2024.
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On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond
Authors:
A. J. Healey,
S. C. Scholten,
A. Nadarajah,
P. Singh,
N. Dontschuk,
L. C. L. Hollenberg,
D. A. Simpson,
J. -P. Tetienne
Abstract:
Dense, near-surface (within 10 nm) ensembles of nitrogen-vacancy (NV) centres in diamond are rapidly moving into prominence as the workhorse of a variety of envisaged applications, ranging from the imaging of fast-fluctuating magnetic signals to the facilitation of nuclear hyperpolarisation. Unlike their bulk counterparts, near-surface ensembles suffer from charge stability issues and reduced NV f…
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Dense, near-surface (within 10 nm) ensembles of nitrogen-vacancy (NV) centres in diamond are rapidly moving into prominence as the workhorse of a variety of envisaged applications, ranging from the imaging of fast-fluctuating magnetic signals to the facilitation of nuclear hyperpolarisation. Unlike their bulk counterparts, near-surface ensembles suffer from charge stability issues and reduced NV formation efficiency due to the diamond surface's role as a vacancy sink during annealing and an electron sink afterwards. To this end, work is ongoing to determine the best methods for producing high-quality ensembles in this regime. Here we examine the prospects for creating such ensembles cost-effectively by implanting nitrogen-rich type Ib diamond with electron donors, aiming to exploit the high bulk nitrogen density to combat surface-induced band bending in the process. This approach has previously been successful at creating deeper ensembles, however we find that in the near-surface regime there are fewer benefits over nitrogen implantation into pure diamond substrates. Our results suggest that control over diamond surface termination during annealing is key to successfully creating high-yield near-surface NV ensembles generally, and implantation into type Ib diamond may be worth revisiting once that has been accomplished.
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Submitted 28 October, 2022;
originally announced October 2022.
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Varied magnetic phases in a van der Waals easy-plane antiferromagnet revealed by nitrogen-vacancy center microscopy
Authors:
A. J. Healey,
S. Rahman,
S. C. Scholten,
I. O. Robertson,
G. J. Abrahams,
N. Dontschuk,
B. Liu,
L. C. L. Hollenberg,
Y. Lu,
J. -P. Tetienne
Abstract:
Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin components that do not suffer from surface defects. One appealing property is easily-switchable yet robust magnetic order, a quality only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widef…
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Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin components that do not suffer from surface defects. One appealing property is easily-switchable yet robust magnetic order, a quality only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widefield nitrogen-vacancy (NV) center magnetic imaging to measure the properties of individual flakes of CuCrP$_2$S$_6$, a multiferroic van der Waals magnet known to exhibit weak easy-plane anisotropy in the bulk. We chart the crossover between in-plane ferromagnetism in thin flakes down to the trilayer, and the bulk behaviour dominated by a low-field spin-flop transition. Further, by exploiting the directional dependence of NV center magnetometry, we are able to observe an instance of a predominantly out-of-plane ferromagetic phase near zero field, in contradiction with expectation and previous experiments on the bulk material. We attribute this to the presence of surface anisotropies arising from the sample preparation process or exposure to the ambient environment, which is expected to have more general implications for a broader class of weakly anisotropic van der Waals magnets.
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Submitted 20 April, 2022;
originally announced April 2022.
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Electrical Control of Quantum Emitters in a Van der Waals Heterostructure
Authors:
Simon J. U. White,
Tieshan Yang,
Nikolai Dontschuk,
Chi Li,
Zai-Quan Xu,
Mehran Kianinia,
Alastair Stacey,
Milos Toth,
Igor Aharonovich
Abstract:
Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient do** inhibits electrical tr…
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Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient do** inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in n hBN graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly coherent source with linewidths of 160 MHz. Our results enhance the potential of hBN for tuneable solid state quantum emitters for the growing field of quantum information science.
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Submitted 4 November, 2021;
originally announced November 2021.
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An Integrated Widefield Probe for Practical Diamond Nitrogen-Vacancy Microscopy
Authors:
G. J. Abrahams,
S. C. Scholten,
A. J. Healey,
I. O. Robertson,
N. Dontschuk,
S. Q. Lim,
B. C. Johnson,
D. A. Simpson,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably…
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The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably minimizes NV-sample standoff. We built a compact widefield NV microscope which incorporates an integrated widefield diamond probe with full position and angular control, and developed a systematic alignment procedure based on optical interference fringes. Using this platform, we imaged an ultrathin (1 nm) magnetic film test sample, and conducted a detailed study of the spatial resolution. We reproducibly achieved an estimated NV-sample standoff (and hence spatial resolution) of at most $\sim2~μ$m across a $\sim0.5$ mm field of view. Guided by these results, we suggest future improvements for approaching the optical diffraction limit. This work is a step towards realizing a widefield NV microscope suitable for routine high-throughput map** of magnetic fields.
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Submitted 29 September, 2021;
originally announced September 2021.
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Improved current density and magnetisation reconstruction through vector magnetic field measurements
Authors:
D. A. Broadway,
S. E. Lillie,
Sam C. Scholten,
D. Rohner,
N. Dontschuk,
P. Maletinsky,
J. -P. Tetienne,
L. C. L. Hollenberg
Abstract:
Stray magnetic fields contain significant information about the electronic and magnetic properties of condensed matter systems. For two-dimensional (2D) systems, stray field measurements can even allow full determination of the source quantity. For instance, a 2D map of the stray magnetic field can be uniquely transformed into the 2D current density that gave rise to the field and, under some cond…
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Stray magnetic fields contain significant information about the electronic and magnetic properties of condensed matter systems. For two-dimensional (2D) systems, stray field measurements can even allow full determination of the source quantity. For instance, a 2D map of the stray magnetic field can be uniquely transformed into the 2D current density that gave rise to the field and, under some conditions, into the equivalent 2D magnetisation. However, implementing these transformations typically requires truncation of the initial data and involves singularities that may introduce errors, artefacts, and amplify noise. Here we investigate the possibility of mitigating these issues through vector measurements. For each scenario (current reconstruction and magnetisation reconstruction) the different possible reconstruction pathways are analysed and their performances compared. In particular, we find that the simultaneous measurement of both in-plane components ($B_x$ and $B_y$) enables near-ideal reconstruction of the current density, without singularity or truncation artefacts, which constitutes a significant improvement over reconstruction based on a single component (e.g. $B_z$). On the other hand, for magnetisation reconstruction, a single measurement of the out-of-plane field ($B_z$) is generally the best choice, regardless of the magnetisation direction. We verify these findings experimentally using nitrogen-vacancy magnetometry in the case of a 2D current density and a 2D magnet with perpendicular magnetisation.
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Submitted 14 May, 2020;
originally announced May 2020.
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Imaging domain reversal in an ultrathin van der Waals ferromagnet
Authors:
David A. Broadway,
Sam C. Scholten,
Cheng Tan,
Nikolai Dontschuk,
Scott E. Lillie,
Brett C. Johnson,
Guolin Zheng,
Zhenhai Wang,
Artem R. Oganov,
Shangjie Tian,
Chenghe Li,
Hechang Lei,
Lan Wang,
Lloyd C. L. Hollenberg,
Jean-Philippe Tetienne
Abstract:
The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. However, the microscopic details of fundamental processes such as the initial magnetization or domain reversal, which govern the magnetic hysteresis, remain largely unknown in the ultrathin limit. Here we employ a widefield n…
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The recent isolation of two-dimensional van der Waals magnetic materials has uncovered rich physics that often differs from the magnetic behaviour of their bulk counterparts. However, the microscopic details of fundamental processes such as the initial magnetization or domain reversal, which govern the magnetic hysteresis, remain largely unknown in the ultrathin limit. Here we employ a widefield nitrogen-vacancy (NV) microscope to directly image these processes in few-layer flakes of magnetic semiconductor vanadium triiodide (VI$_3$). We observe complete and abrupt switching of most flakes at fields $H_c\approx0.5-1$ T (at 5 K) independent of thickness down to two atomic layers, with no intermediate partially-reversed state. The coercive field decreases as the temperature approaches the Curie temperature ($T_c\approx50$ K), however, the switching remains abrupt. We then image the initial magnetization process, which reveals thickness-dependent domain wall depinning fields well below $H_c$. These results point to ultrathin VI$_3$ being a nucleation-type hard ferromagnet, where the coercive field is set by the anisotropy-limited domain wall nucleation field. This work illustrates the power of widefield NV microscopy to investigate magnetization processes in van der Waals ferromagnets, which could be used to elucidate the origin of the hard ferromagnetic properties of other materials and explore field- and current-driven domain wall dynamics.
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Submitted 18 March, 2020;
originally announced March 2020.
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Epitaxial growth of SiC on (100) Diamond
Authors:
A. Tsai,
A. Aghajamali,
N. Dontschuk,
B. C. Johnson,
M. Usman,
A. K. Schenk,
M. Sear,
C. I. Pakes,
L. C. L. Hollenberg,
J. C. McCallum,
S. Rubanov,
A. Tadich,
N. A. Marks,
A. Stacey
Abstract:
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the inter…
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We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.
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Submitted 17 February, 2020;
originally announced February 2020.
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Laser modulation of superconductivity in a cryogenic widefield nitrogen-vacancy microscope
Authors:
Scott E. Lillie,
David A. Broadway,
Nikolai Dontschuk,
Sam C. Scholten,
Brett C. Johnson,
Sebastian Wolf,
Stephan Rachel,
Lloyd C. L. Hollenberg,
Jean-Philippe Tetienne
Abstract:
Microscopic imaging based on nitrogen-vacancy (NV) centres in diamond, a tool increasingly used for room-temperature studies of condensed matter systems, has recently been extended to cryogenic conditions. However, it remains unclear whether the technique is viable for imaging temperature-sensitive phenomena below 10 K given the inherent laser illumination requirements, especially in a widefield c…
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Microscopic imaging based on nitrogen-vacancy (NV) centres in diamond, a tool increasingly used for room-temperature studies of condensed matter systems, has recently been extended to cryogenic conditions. However, it remains unclear whether the technique is viable for imaging temperature-sensitive phenomena below 10 K given the inherent laser illumination requirements, especially in a widefield configuration. Here we realise a widefield NV microscope with a field of view of 100 $μ$m and a base temperature of 4 K, and use it to image Abrikosov vortices and transport currents in a superconducting Nb film. We observe the disappearance of vortices upon increase of laser power and their clustering about hot spots upon decrease, indicating that laser powers as low as 1 mW (4 orders of magnitude below the NV saturation) are sufficient to locally quench the superconductivity of the film ($T_c = 9$ K). This significant local heating is confirmed by resistance measurements, which reveal the presence of large temperature gradients (several K) across the film. We then investigate the effect of such gradients on transport currents, where the current path is seen to correlate with the temperature profile even in the fully superconducting phase. In addition to highlighting the role of temperature inhomogeneities in superconductivity phenomena, this work establishes that, under sufficiently low laser power conditions, widefield NV microscopy enables imaging over mesoscopic scales down to 4 K with a submicrometer spatial resolution, providing a new platform for real-space investigations of a range of systems from topological insulators to van der Waals ferromagnets.
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Submitted 5 December, 2019;
originally announced December 2019.
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Imaging graphene field-effect transistors on diamond using nitrogen-vacancy microscopy
Authors:
Scott E. Lillie,
Nikolai Dontschuk,
David A. Broadway,
Daniel L. Creedon,
Lloyd C. L. Hollenberg,
Jean-Philippe Tetienne
Abstract:
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored. Here we fabricate graphene field-effect transistors (GFETs) directly on the diamond surface and characterise them via NV microscopy. The current densi…
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The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored. Here we fabricate graphene field-effect transistors (GFETs) directly on the diamond surface and characterise them via NV microscopy. The current density within the gated graphene is reconstructed from NV magnetometry under both mostly p- and n-type do**, but the exact do** level is found to be affected by the measurements. Additionally, we observe a surprisingly large modulation of the electric field at the diamond surface under an applied gate potential, seen in NV photoluminescence and NV electrometry measurements, suggesting a complex electrostatic response of the oxide-graphene-diamond structure. Possible solutions to mitigate these effects are discussed.
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Submitted 30 May, 2019;
originally announced May 2019.
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Enhanced widefield quantum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays
Authors:
D. J. McCloskey,
N. Dontschuk,
D. A. Broadway,
A. Nadarajah,
A. Stacey,
J. -P. Tetienne,
L. C. L. Hollenberg,
S. Prawer,
D. A. Simpson
Abstract:
Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter…
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Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter regime for this purpose, but their applicability to widefield sensing with NV ensembles remains largely unexplored. Here we fabricate and characterize closely-packed arrays of diamond nanopillars, each hosting its own dense, near-surface ensemble of NV centres. We explore the optimal geometry for diamond nanopillars hosting NV ensembles and realise enhanced spin and photoluminescence properties which lead to increased measurement sensitivities (greater than a factor of 3) when compared to unpatterned surfaces. Utilising the increased measurement sensitivity, we image the mechanical stress tensor in each nanopillar across the arrays and show the fabrication process has negligible impact on in-built stress compared to the unpatterned surface. Our results demonstrate that photonic nanostructuring of the diamond surface is a viable strategy for increasing the sensitivity of ensemble-based widefield sensing and imaging.
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Submitted 6 February, 2019;
originally announced February 2019.
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Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors
Authors:
D. A. Broadway,
B. C. Johnson,
M. S. J. Barson,
S. E. Lillie,
N. Dontschuk,
D. J. McCloskey,
A. Tsai,
T. Teraji,
D. A. Simpson,
A. Stacey,
J. C. McCallum,
J. E. Bradby,
M. W. Doherty,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stre…
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The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial map** of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including map** the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.
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Submitted 3 December, 2018;
originally announced December 2018.
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Origins of diamond surface noise probed by correlating single spin measurements with surface spectroscopy
Authors:
Sorawis Sangtawesin,
Bo L. Dwyer,
Srikanth Srinivasan,
James J. Allred,
Lila V. H. Rodgers,
Kristiaan De Greve,
Alastair Stacey,
Nikolai Dontschuk,
Kane M. O'Donnell,
Di Hu,
D. Andrew Evans,
Cherno Jaye,
Daniel A. Fischer,
Matthew L. Markham,
Daniel J. Twitchen,
Hongkun Park,
Mikhail D. Lukin,
Nathalie P. de Leon
Abstract:
The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometer…
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The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometers of the surface, suggesting that diamond surfaces are plagued with ubiquitous defects. Prior work on characterizing near-surface noise has primarily relied on using NV centers themselves as probes; while this has the advantage of exquisite sensitivity, it provides only indirect information about the origin of the noise. Here we demonstrate that surface spectroscopy methods and single spin measurements can be used as complementary diagnostics to understand sources of noise. We find that surface morphology is crucial for realizing reproducible chemical termination, and use these insights to achieve a highly ordered, oxygen-terminated surface with suppressed noise. We observe NV centers within 10 nm of the surface with coherence times extended by an order of magnitude.
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Submitted 31 October, 2018;
originally announced November 2018.
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Apparent delocalisation of the current flow in metallic wires observed with diamond nitrogen-vacancy magnetometry
Authors:
J. -P. Tetienne,
N. Dontschuk,
D. A. Broadway,
S. E. Lillie,
T. Teraji,
D. A. Simpson,
A. Stacey,
L. C. L. Hollenberg
Abstract:
We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic micro-wires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centres engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically-detected magnetic resonance…
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We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic micro-wires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centres engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically-detected magnetic resonance spectroscopy. The in-plane magnetic field (i.e. parallel to the diamond surface) is found to be significantly weaker than predicted, while the out-of-plane field also exhibits an unexpected modulation. We show that the measured magnetic field is incompatible with Ampere's circuital law or Gauss's law for magnetism when we assume that the current is confined to the metal, independent of the details of the current density. This result was reproduced in several diamond samples, with a measured deviation from Ampere's law by as much as 94(6)\%. To resolve this apparent magnetic anomaly, we introduce a generalised description whereby the current is allowed to flow both above the NV sensing layer (including in the metallic wire) and below the NV layer (i.e. in the diamond). Inversion of the Biot-Savart law within this two-channel description leads to a unique solution for the two current densities, which completely explains the data, is consistent with the laws of classical electrodynamics and indicates a total NV-measured current that closely matches the electrically-measured current. However, this description also leads to the surprising conclusion that in certain circumstances the majority of the current appears to flow in the diamond substrate rather than in the metallic wire, and to spread laterally in the diamond by several micrometres away from the wire. No electrical conduction was observed between nearby test wires, ruling out a conventional conductivity effect. [...]
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Submitted 17 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Spatial map** of band bending in semiconductor devices using in-situ quantum sensors
Authors:
D. A. Broadway,
N. Dontschuk,
A. Tsai,
S. E. Lillie,
C. T. -K. Lew,
J. C. McCallum,
B. C. Johnson,
M. W. Doherty,
A. Stacey,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are…
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Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional map** of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.
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Submitted 13 September, 2018;
originally announced September 2018.
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Magnetic noise from ultra-thin abrasively deposited materials on diamond
Authors:
S. E. Lillie,
D. A. Broadway,
N. Dontschuk,
A. Zavabeti,
D. A. Simpson,
T. Teraji,
T. Daeneke,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
Sensing techniques based on the negatively charged nitrogen-vacancy (NV) centre in diamond have emerged as promising candidates to characterise ultra-thin and 2D materials. An outstanding challenge to this goal is isolating the contribution of 2D materials from undesired contributions arising from surface contamination, and changes to the diamond surface induced by the sample or transfer process.…
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Sensing techniques based on the negatively charged nitrogen-vacancy (NV) centre in diamond have emerged as promising candidates to characterise ultra-thin and 2D materials. An outstanding challenge to this goal is isolating the contribution of 2D materials from undesired contributions arising from surface contamination, and changes to the diamond surface induced by the sample or transfer process. Here we report on such a scenario, in which the abrasive deposition of trace amounts of materials onto a diamond gives rise to a previously unreported source of magnetic noise. By deliberately scratching the diamond surface with macroscopic blocks of various metals (Fe, Cu, Cr, Au), we are able to form ultra-thin structures (i.e. with thicknesses down to $<1$\,nm), and find that these structures give rise to a broadband source of noise. Explanation for these effects are discussed, including spin and charge noise native to the sample and/or induced by sample-surface interactions, and indirect effects, where the deposited material affects the charge stability and magnetic environment of the sensing layer. This work illustrates the high sensitivity of NV noise spectroscopy to ultra-thin materials down to sub-nm regimes -- a key step towards the study of 2D electronic systems -- and highlights the need to passivate the diamond surface for future sensing applications in ultra-thin and 2D materials.
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Submitted 13 August, 2018;
originally announced August 2018.
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Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trap** and Noise Sources
Authors:
Alastair Stacey,
Nikolai Dontschuk,
Jyh-Pin Chou,
David A. Broadway,
Alex Schenk,
Michael J. Sear,
Jean-Philippe Tetienne,
Alon Hoffman,
Steven Prawer,
Chris I. Pakes,
Anton Tadich,
Nathalie P. de Leon,
Adam Gali,
Lloyd C. L. Hollenberg
Abstract:
Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for these applications is often limited by the uncontrolled nature of the diamond material surface, which suffers from Fermi-level pinning and hosts a significant densi…
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Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for these applications is often limited by the uncontrolled nature of the diamond material surface, which suffers from Fermi-level pinning and hosts a significant density of electro-magnetic noise sources. These issues occur despite the oxide-free and air-stable nature of the diamond crystal surface, which should be an ideal candidate for functionalization and chemical-engineering. In this work we reveal a family of previously unidentified and near-ubiquitous primal surface defects which we assign to differently reconstructed surface vacancies. The density of these defects is quantified with X-ray absorption spectroscopy, their energy structures are elucidated by ab initio calculations, and their effect on near-surface quantum probes is measured directly. Subsequent ab-initio calculation of band-bending from these defects suggest they are the source of Fermi-level pinning at most diamond surfaces. Finally, an investigation is conducted on a broad range of post-growth surface treatments and concludes that none of them can reproducibly reduce this defect density below the Fermi-pinning threshold, making this defect a prime candidate as the source for decoherence-limiting noise in near-surface quantum probes.
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Submitted 9 July, 2018;
originally announced July 2018.
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Proximity-induced artefacts in magnetic imaging with nitrogen-vacancy ensembles in diamond
Authors:
J. -P. Tetienne,
D. A. Broadway,
S. E. Lillie,
N. Dontschuk,
T. Teraji,
L. T. Hall,
A. Stacey,
D. A. Simpson,
L. C. L. Hollenberg
Abstract:
Magnetic imaging with ensembles of nitrogen-vacancy (NV) centres in diamond is a recently developed technique that allows for quantitative vector field map**. Here we uncover a source of artefacts in the measured magnetic field in situations where the magnetic sample is placed in close proximity (a few tens of nm) to the NV sensing layer. Using magnetic nanoparticles as a test sample, we find th…
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Magnetic imaging with ensembles of nitrogen-vacancy (NV) centres in diamond is a recently developed technique that allows for quantitative vector field map**. Here we uncover a source of artefacts in the measured magnetic field in situations where the magnetic sample is placed in close proximity (a few tens of nm) to the NV sensing layer. Using magnetic nanoparticles as a test sample, we find that the measured field deviates significantly from the calculated field, in shape, amplitude and even in sign. By modelling the full measurement process, we show that these discrepancies are caused by the limited measurement range of NV sensors combined with the finite spatial resolution of the optical readout. We numerically investigate the role of the stand-off distance to identify an artefact-free regime, and discuss an application to ultrathin materials. This work provides a guide to predict and mitigate proximity-induced artefacts that can arise in NV-based wide-field magnetic imaging, and also demonstrates that the sensitivity of these artefacts to the sample can make them a useful tool for magnetic characterisation.
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Submitted 26 March, 2018;
originally announced March 2018.
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High precision single qubit tuning via thermo-magnetic field control
Authors:
David A. Broadway,
Scott E. Lillie,
Nikolai Dontschuk,
Alastair Stacey,
Liam T. Hall,
Jean-Philippe Tetienne,
Lloyd C. L. Hollenberg
Abstract:
Precise control of the resonant frequency of a spin qubit is of fundamental importance to quantum sensing protocols. We demonstrate a control technique on a single nitrogen-vacancy (NV) centre in diamond where the applied magnetic field is modified by fine-tuning a permanent magnet's magnetisation via temperature control. Through this control mechanism, nanoscale cross-relaxation spectroscopy of b…
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Precise control of the resonant frequency of a spin qubit is of fundamental importance to quantum sensing protocols. We demonstrate a control technique on a single nitrogen-vacancy (NV) centre in diamond where the applied magnetic field is modified by fine-tuning a permanent magnet's magnetisation via temperature control. Through this control mechanism, nanoscale cross-relaxation spectroscopy of both electron and nuclear spins in the vicinity of the NV centre are performed. We then show that through maintaining the magnet at a constant temperature an order of magnitude improvement in the stability of the NV qubit frequency can be achieved. This improved stability is tested in the polarisation of a small ensemble of nearby $^{13}$C spins via resonant cross-relaxation and the lifetime of this polarisation explored. The effectiveness and relative simplicity of this technique may find use in the realisation of portable spectroscopy and/or hyperpolarisation systems.
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Submitted 23 December, 2017;
originally announced December 2017.
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Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond
Authors:
J. -P. Tetienne,
R. W. de Gille,
D. A. Broadway,
T. Teraji,
S. E. Lillie,
J. M. McCoey,
N. Dontschuk,
L. T. Hall,
A. Stacey,
D. A. Simpson,
L. C. L. Hollenberg
Abstract:
We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage…
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We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy ($4-30$~keV) and dose ($5\times10^{11}-10^{13}$~ions/cm$^2$) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at $\geq1100^\circ$C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving $\approx10$-17~nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications.
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Submitted 4 February, 2018; v1 submitted 13 November, 2017;
originally announced November 2017.
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Quantum imaging of current flow in graphene
Authors:
Jean-Philippe Tetienne,
Nikolai Dontschuk,
David A. Broadway,
Alastair Stacey,
David A. Simpson,
Lloyd C. L. Hollenberg
Abstract:
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous opportunities for future electronic and sensing devices. However, to fully realise these goals a major challenge is the ability to non-invasively image charge curren…
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Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous opportunities for future electronic and sensing devices. However, to fully realise these goals a major challenge is the ability to non-invasively image charge currents in monolayer graphene structures and devices. Typically, electronic transport in graphene has been investigated via resistivity measurements, however, such measurements are generally blind to spatial information critical to observing and studying landmark transport phenomena such as electron guiding and focusing, topological currents and viscous electron backflow in real space, and in realistic imperfect devices. Here we bring quantum imaging to bear on the problem and demonstrate high-resolution imaging of current flow in graphene structures. Our method utilises an engineered array of near-surface, atomic-sized quantum sensors in diamond, to map the vector magnetic field and reconstruct the vector current density over graphene geometries of varying complexity, from mono-ribbons to junctions, with spatial resolution at the diffraction limit and a projected sensitivity to currents as small as 1 μA. The measured current maps reveal strong spatial variations corresponding to physical defects at the sub-μm scale. The demonstrated method opens up an important new avenue to investigate fundamental electronic and spin transport in graphene structures and devices, and more generally in emerging two-dimensional materials and thin film systems.
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Submitted 29 September, 2016;
originally announced September 2016.
