Showing 1–15 of 15 results for author: Dong, J T

Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)

Authors: C. P. Dempsey, J. T. Dong, I. Villar Rodriguez, Y. Gul, S. Chatterjee, M. Pendharkar, S. N. Holmes, M. Pepper, C. J. Palmstrøm

Abstract: InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown t… ▽ More InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown to reduce the effect of both of these scattering mechanisms. However, for current state-of-the-art devices with As-based cladding and barrier layers, the critical thickness is limited to $\leq7$ nm. In this report, we demonstrate the use of strain compensation techniques in the InGaAs cladding layers to extend the critical thickness well beyond this limit. We induce tensile strain in the InGaAs cladding layers by reducing the In concentration from In$_{0.81}$Ga$_{0.19}$As to In$_{0.70}$Ga$_{0.30}$As and we observe changes in both the critical thickness of the well and the maximum achievable mobility. The peak electron mobility at 2 K is $1.16\times10^6$ cm$^2/$Vs, with a carrier density of $4.2\times10^{11}$ /cm$^2$. Additionally, we study the quantum lifetime and Rashba spin splitting in the highest mobility device as these parameters are critical to determine if these structures can be used in topologically nontrivial devices. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Cryogenic growth of tantalum thin films for low-loss superconducting circuits

Authors: Teun A. J. van Schijndel, Anthony P. McFadden, Aaron N. Engel, Jason T. Dong, Wilson J. Yánez-Parreño, Manisha Parthasarathy, Raymond W. Simmonds, Christopher J. Palmstrøm

Abstract: Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize si… ▽ More Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase $α$-Ta on several different substrates, which include Al$\mathrm{_2}$O$\mathrm{_3}$(0001), Si(001), Si(111), SiN${_x}$, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray $θ$-2$θ$ diffraction after warming to room temperature indicates the formation of polycrystalline $α$-Ta. The 50 nm $α$-Ta films grown on Al$\mathrm{_2}$O$\mathrm{_3}$(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity ($\mathrm{ρ_{300 K}}$) of 13.4 $\mathrm{μΩ}$cm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (T$_C$) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher $\mathrm{ρ_{300 K}}$, lower RRR and Tc, and increased $β$-Ta content. Coplanar waveguide resonators with a gap width of 3 $\mathrmμ$m fabricated from cryogenically grown Ta on Si(111) and Al$\mathrm{_2}$O$\mathrm{_3}$(0001) show low power Q$_i$ of 1.9 million and 0.7 million, respectively, indicating polycrystalline $α$-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial. △ Less

Submitted 20 May, 2024; originally announced May 2024.

Enhanced mobility of ternary InGaAs quantum wells through digital alloying

Authors: Jason T. Dong, Yilmaz Gul, Aaron N. Engel, Teun A. J. van Schijndel, Connor P. Dempsey, Michael Pepper, Christopher J. Palmstrøm

Abstract: High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering withi… ▽ More High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering within the quantum well and increase the peak 2 K electron mobility to 545,000 cm^2/V s, which is the highest reported mobility for high In content InGaAs quantum wells to the best of the authors' knowledge. Our results demonstrate that the digital alloy approach can be used to increase the mobility of quantum wells in random alloy ternary materials. △ Less

Submitted 29 March, 2024; v1 submitted 25 March, 2024; originally announced March 2024.

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Authors: Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar, Connor P. Dempsey, Shinichi Nishihaya, Wilson Yánez-Parreño, Yuhao Chang, Jason T. Dong, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investig… ▽ More The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $α$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant war** in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $α$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $α$-Sn in spintronics. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Strain Solitons in an Epitaxially Strained van der Waals-like Material

Authors: Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey, Aaron N. Engel, Christopher J. Palmstrøm

Abstract: Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approa… ▽ More Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approach towards the generation of strain solitons poses a significant challenge in the study of and use of the properties of strain solitons. Here we report the formation of strain solitons with epitaxial growth of bismuth on an InSb (111)B substrate by molecular beam epitaxy. The morphology of the strain solitons for films of varying thickness is characterized with scanning tunneling microscopy and the local strain state is determined from the analysis of atomic resolution images. Bending in the solitons is attributed due to interactions with the interface, and large angle bending is associated with edge dislocations. Our results enable the scalable generation of strain solitons. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Authors: Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar, Jason T. Dong, Shinichi Nishihaya, Yu Hao Chang, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α… ▽ More $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk do** or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response. △ Less

Submitted 29 November, 2023; v1 submitted 27 November, 2023; originally announced November 2023.

Electronic structure of InSb (001), (110), and (111)B surfaces

Authors: Jason T. Dong, Hadass S. Inbar, Mihir Pendharkar, Teun A. J. van Schijndel, Elliot C. Young, Connor P. Dempsey, Christopher J. Palmstrøm

Abstract: The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned n… ▽ More The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to $254 \pm 35$ meV towards the conduction band on the InSb (001) surface and $60 \pm 35$ meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination. △ Less

Submitted 18 February, 2023; originally announced February 2023.

Comments: 7 pages, 5 figures

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors: Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm

Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an… ▽ More Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. △ Less

Submitted 16 May, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect

Authors: P. Zhang, S. Mudi, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Her… ▽ More Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://zenodo.org/record/6416083

Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions

Authors: P. Zhang, A. Zarassi, L. Jarjat, V. Van de Sande, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gat… ▽ More We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence. △ Less

Submitted 19 November, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083 v2: Added block "Non-identical negative and positive switching currents" and Figs.S4, S5. v3: Added Figs. 6, S6-S9, simulations with both inductive and second harmonic effects

Journal ref: SciPost Phys. 16, 030 (2024)

Planar Josephson Junctions Templated by Nanowire Shadowing

Authors: P. Zhang, A. Zarassi, M. Pendharkar, J. S. Lee, L. Jarjat, V. Van de Sande, B. Zhang, S. Mudi, H. Wu, S. Tan, C. P. Dempsey, A. P. McFadden, S. D. Harrington, B. Shojaei, J. T. Dong, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol… ▽ More More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Mihir Pendharkar, Aaron N. Engel, Jason T. Dong, Shoaib Khalid, Yu Hao Chang, Taozhi Guo, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin… ▽ More Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. △ Less

Submitted 25 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.

Report number: Phys. Rev. Materials 6, L121201

Journal ref: Phys. Rev. Materials 6, L121201 (2022)

Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device

Authors: Mohit Gupta, Gino V. Graziano, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensiona… ▽ More The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits. △ Less

Submitted 3 June, 2023; v1 submitted 16 June, 2022; originally announced June 2022.

Journal ref: Nat Commun 14, 3078 (2023)

Selective Control of Conductance Modes in Multi-terminal Josephson Junctions

Authors: Gino V. Graziano, Mohit Gupta, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point cont… ▽ More The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point contact geometry in three-terminal Josephson devices. We demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions. △ Less

Submitted 9 October, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Comments: 15 pages, 4 figures

Journal ref: Nat Commun 13, 5933 (2022)

Towards merged-element transmons using silicon fins: the FinMET

Authors: Aranya Goswami, Anthony P. McFadden, Tongyu Zhao, Hadass S. Inbar, Jason T. Dong, Ruichen Zhao, Corey Rae McRae, Raymond W. Simmonds, Christopher J. Palmstrøm, David P. Pappas

Abstract: A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process… ▽ More A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers. △ Less

Submitted 1 July, 2022; v1 submitted 25 August, 2021; originally announced August 2021.