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Bosonic multi-Higgs correlations beyond leading order
Authors:
Anisha,
Daniel Domenech,
Christoph Englert,
Maria J. Herrero,
Roberto A. Morales
Abstract:
The production of multiple Higgs bosons at the LHC and beyond is a strong test of the mechanism of electroweak symmetry breaking. Taking inspiration from recent experimental efforts to move towards limits on triple Higgs production at the Large Hadron Collider, we consider generic bosonic deviations of $HH$ and $HHH$ production from the Standard Model in the guise of Higgs Effective Field Theory.…
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The production of multiple Higgs bosons at the LHC and beyond is a strong test of the mechanism of electroweak symmetry breaking. Taking inspiration from recent experimental efforts to move towards limits on triple Higgs production at the Large Hadron Collider, we consider generic bosonic deviations of $HH$ and $HHH$ production from the Standard Model in the guise of Higgs Effective Field Theory. Including one-loop radiative corrections within the HEFT and going up to ${\mathcal{O}}(p^4)$ in the momentum expansion, we provide a detailed motivation of the parameter range that the LHC (and future hadron colliders) can explore, through accessing non-standard coupling modifications and momentum dependencies that probe Higgs boson non-linearities. In particular, we find that radiative corrections can enhance the sensitivity to Higgs-self coupling modifiers and HEFT-specific momentum dependencies can vastly increase triple Higgs production thus providing further motivation to consider these processes during the LHC's high-luminosity phase.
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Submitted 8 May, 2024;
originally announced May 2024.
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Exploring correlations between HEFT Higgs couplings $κ_V$ and $κ_{2V}$ via HH production at $e^+e^-$ colliders
Authors:
J. M. Dávila,
D. Domenech,
M. J. Herrero,
R. A. Morales
Abstract:
In this work we explore the phenomenological implications at future $e^+e^-$ colliders of assuming anomalous couplings of the Higgs boson to gauge bosons $HVV$ and $HHVV$ ($V=W,Z$) given by the $κ$-modifiers with respect to the Standard Model couplings, $κ_V$ and $κ_{2V}$, respectively. For this study we use the Higgs Effective Field Theory (HEFT) where these two $κ$ parameters are identified with…
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In this work we explore the phenomenological implications at future $e^+e^-$ colliders of assuming anomalous couplings of the Higgs boson to gauge bosons $HVV$ and $HHVV$ ($V=W,Z$) given by the $κ$-modifiers with respect to the Standard Model couplings, $κ_V$ and $κ_{2V}$, respectively. For this study we use the Higgs Effective Field Theory (HEFT) where these two $κ$ parameters are identified with the two most relevant effective couplings at leading order, concretely $a=κ_V$ and $b=κ_{2V}$. Our focus is put on these two couplings and their potential correlations which we believe carry interesting information on the underlying ultraviolet theory. The particular studied process is $e^+e^- \to HH ν\bar ν$, where the vector boson scattering subprocess $WW \to HH$ plays a central role, specially at the largest planned energy colliders. Our detailed study of this process as a function of the energy and the angular variables indicates that the produced Higgs bosons in the BSM scenarios will have in general a high transversality as compared to the SM case if $κ_V^2 \neq κ_{2V}$. In order to enhance the sensitivity to these HEFT parameters $κ_V$ and $κ_{2V}$ and their potential correlations we propose here some selected differential cross sections for the $e^+e^- \to HH ν\barν$ process where different kinematic properties of the BSM case with respect to the SM are manifested. Finally, we will focus on the dominant Higgs decays to $b \bar b$ pairs leading to final events with 4 $b$-jets and missing transverse energy from the undetected neutrinos and will provide the expected accessibility to the $(κ_V,κ_{2V})$ effective couplings and their potential correlations. In our study we will consider the three projected energies for $e^+e^-$ colliders of 500 GeV, 1000 GeV and 3000 GeV.
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Submitted 20 May, 2024; v1 submitted 6 December, 2023;
originally announced December 2023.
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Non-decoupling effects from heavy Higgs bosons by matching 2HDM to HEFT amplitudes
Authors:
F. Arco,
D. Domenech,
M. J. Herrero,
R. A. Morales
Abstract:
In this work we explore the low energy effects induced from the integration of the heavy Higgs boson modes, $H$, $A$ and $H^\pm$, within the Two Higgs Doublet Model (2HDM) by assuming that the lightest Higgs boson $h$ is the one observed experimentally at $m_h \sim 125$ GeV. We work within the context of Effective Field Theories, focusing on the Higgs Effective Field Theory (HEFT), although some c…
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In this work we explore the low energy effects induced from the integration of the heavy Higgs boson modes, $H$, $A$ and $H^\pm$, within the Two Higgs Doublet Model (2HDM) by assuming that the lightest Higgs boson $h$ is the one observed experimentally at $m_h \sim 125$ GeV. We work within the context of Effective Field Theories, focusing on the Higgs Effective Field Theory (HEFT), although some comparisons with the Standard Model Effective Field Theory (SMEFT) case are also discussed through this work. Our main focus is placed in the computation of the non-decoupling effects from the heavy Higgs bosons and the capture of such effects by means of the HEFT coefficients which are expressed in terms of the input parameters of the 2HDM. Our approach to solve this issue is by matching the amplitudes of the 2HDM and the HEFT for physical processes involving the light Higgs boson $h$ in the external legs, instead of the most frequently used matching procedure at the Lagrangian level. More concretely, we perform the matching at the amplitudes level for the following physical processes, including scattering and decays: $h\to WW^*\to Wf\bar{f'}$, $h\to ZZ^*\to Zf\bar{f}$, $WW \to hh$, $ZZ \to hh$, $hh \to hh$, $h \to γγ$ and $h \to γZ$. One important point of this work is that the matching is required to happen at low energies compared to the heavy Higgs boson masses, and these are heavier than the other particle masses. The proper expansion for this heavy mass limit is also defined here, which provides the results for the non-decoupling effects presented in this work. We finally discuss the implications of the resulting effective coefficients, and remark on the interesting correlations detected among them.
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Submitted 28 July, 2023;
originally announced July 2023.
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Double Higgs production at TeV $e^+e^-$ colliders with Effective Field Theories: sensitivity to BSM Higgs couplings
Authors:
D. Domenech,
M. J. Herrero,
R. A. Morales,
M. Ramos
Abstract:
In this work we study the production of two Higgs bosons at the two planned electron positron colliders with energies at the TeV domain, CLIC and ILC, within the context of Effective Field Theories (EFTs) to describe beyond the Standard Model Higgs Physics. We focus first on the case of the Higgs Effective Field Theory (HEFT) and next we compare with the case of the Standard Model Effective Field…
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In this work we study the production of two Higgs bosons at the two planned electron positron colliders with energies at the TeV domain, CLIC and ILC, within the context of Effective Field Theories (EFTs) to describe beyond the Standard Model Higgs Physics. We focus first on the case of the Higgs Effective Field Theory (HEFT) and next we compare with the case of the Standard Model Effective Field Theory (SMEFT). The predictions for double Higgs production in both EFTs are first presented for the most relevant subprocess participating in the total process of our interest, $e^+e^- \to HH ν\bar ν$, which is the scattering of two gauge bosons, $WW \to HH$, also called $WW$ fusion. The predictions for the cross section $ σ(W_X W_Y\to HH)$ as a function of the subprocess energy are analyzed in full detail for the two EFTs, for all the polarization channels with longitudinal and transverse modes $XY=LL, TT,LT,TL$, and for the most relevant effective operators in both cases. We will demonstrate that in the HEFT case, the total cross section can be fully understood in terms of the $LL$ contribution and this in turn is dominated at these TeV energies mainly by two HEFT coefficients. By doing the matching between the two EFTs at the level of the scattering amplitude for the subprocess, we will be able to find the correspondence of the leading coefficients in the HEFT and the SMEFT. In the final part of this work we will then explore the sensitivity to these two most relevant HEFT coefficients, at CLIC (3 TeV, 5 ab$^{-1}$) and ILC (1 TeV, 8 ab$^{-1}$). We will then conclude on the accessible region of these two parameters by studying the predicted rates at these two $e^+e^-$ colliders for the final state $b \bar b b \bar b ν\bar ν$ leading to characteristic signals with 4 bottom jets and missing energy.
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Submitted 10 August, 2022;
originally announced August 2022.
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Phase diffusion quantum entropy source on a silicon chip
Authors:
Miquel Rudé,
Carlos Abellán,
Albert Capdevila,
David Domenech,
Morgan W. Mitchell,
Waldimar Amaya,
Valerio Pruneri
Abstract:
We report an accelerated laser phase diffusion quantum entropy source with all non-laser optical and optoelectronic elements implemented in silicon photonics. The device uses efficient and robust single-laser accelerated phase diffusion methods, and implements the whole quantum entropy source scheme including an unbalanced Mach-Zehnder interferometer with optimized splitting ratio, in a 0.5 mmx1 m…
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We report an accelerated laser phase diffusion quantum entropy source with all non-laser optical and optoelectronic elements implemented in silicon photonics. The device uses efficient and robust single-laser accelerated phase diffusion methods, and implements the whole quantum entropy source scheme including an unbalanced Mach-Zehnder interferometer with optimized splitting ratio, in a 0.5 mmx1 mm footprint. We demonstrate Gbps raw entropy-generation rates in a technology compatible with conventional CMOS fabrication techniques.
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Submitted 12 April, 2018;
originally announced April 2018.
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A Monolithic Integrated Microwave Photonics Filter
Authors:
Javier S. Fandiño,
Pascual Muñoz,
David Doménech,
José Capmany
Abstract:
Meeting the ever increasing demand for transmission capacity in wireless networks will require evolving towards higher regions in the radiofrequency spectrum, reducing cell sizes as well as resorting to more compact, agile and power efficient equipment at the base stations, capable of smoothly interfacing the radio and fiber segments. Photonic chips with fully functional microwave photonic systems…
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Meeting the ever increasing demand for transmission capacity in wireless networks will require evolving towards higher regions in the radiofrequency spectrum, reducing cell sizes as well as resorting to more compact, agile and power efficient equipment at the base stations, capable of smoothly interfacing the radio and fiber segments. Photonic chips with fully functional microwave photonic systems are promising candidates to achieve these targets. Over the last years, many integrated microwave photonic chips have been reported in different technologies. However, and to the best of our knowledge, none of them have fully integrated all the required active and passive components. Here, we report the first ever demonstration of a microwave photonics tunable filter completely integrated in an Indium Phosphide chip and packaged. The chip implements a reconfigurable RF- photonic filter, it includes all the required elements, such as lasers, modulators and photodetectors, and its response can be tuned by means of control electric currents. This demonstration is a fundamental step towards the feasibility of compact and fully programmable integrated microwave photonic processors.
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Submitted 21 December, 2016;
originally announced December 2016.
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A quantum entropy source on an InP photonic integrated circuit for random number generation
Authors:
Carlos Abellan,
Waldimar Amaya,
David Domenech,
Pascual Muñoz,
Jose Capmany,
Stefano Longhi,
Morgan W. Mitchell,
Valerio Pruneri
Abstract:
Random number generators are essential to ensure performance in information technologies, including cryptography, stochastic simulations and massive data processing. The quality of random numbers ultimately determines the security and privacy that can be achieved, while the speed at which they can be generated poses limits to the utilisation of the available resources. In this work we propose and…
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Random number generators are essential to ensure performance in information technologies, including cryptography, stochastic simulations and massive data processing. The quality of random numbers ultimately determines the security and privacy that can be achieved, while the speed at which they can be generated poses limits to the utilisation of the available resources. In this work we propose and demonstrate a quantum entropy source for random number generation on an indium phosphide photonic integrated circuit made possible by a new design using two-laser interference and heterodyne detection. The resulting device offers high-speed operation with unprecedented security guarantees and reduced form factor. It is also compatible with complementary metal-oxide semiconductor technology, opening the path to its integration in computation and communication electronic cards, which is particularly relevant for the intensive migration of information processing and storage tasks from local premises to cloud data centres.
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Submitted 11 September, 2016;
originally announced September 2016.
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Thermal tuners on a Silicon Nitride platform
Authors:
Daniel Pérez,
Juan Fernández,
Rocío Baños,
José David Doménech,
Ana M. Sánchez,
Josep M. Cirera,
Roser Mas,
Javier Sánchez,
Sara Durán,
Emilio Pardo,
Carlos Domínguez,
Daniel Pastor,
José Capmany,
Pascual Muñoz
Abstract:
In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variab…
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In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variables involved in the thermal efficiency, switching power and heater dimensions, are analysed. Finally, with focus on exploring the limits of this compact tuners with regards to on chip component density, the thermal-cross talk is also investigated. Tuners with footprint of 270x5 μm 2 and switching power of 350 mW are reported, with thermal-cross talk, in terms of induced phase change in adjacent devices of less than one order of magnitude at distances over 20 μm. Paths for the improvement of thermal efficiency, power consumption and resilience of the devices are also outlined
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Submitted 11 April, 2016;
originally announced April 2016.
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Echelle Gratings with Metal Reflectors in Generic Thick Silicon Technology
Authors:
José David Doménech,
Rocío Baños,
Pascual Muñoz
Abstract:
In this paper, the experimental demonstration of Echelle Grating multiplexers in generic thick Silicon technology, using metal reflectors, is reported. Two multiplexer designs are shown, covering the C-band and partially the S and L bands, with 4 and 8 channels respectively. The multiplexers exhibited performance similar to previously reported devices on dedicated manufacturing processes. The aver…
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In this paper, the experimental demonstration of Echelle Grating multiplexers in generic thick Silicon technology, using metal reflectors, is reported. Two multiplexer designs are shown, covering the C-band and partially the S and L bands, with 4 and 8 channels respectively. The multiplexers exhibited performance similar to previously reported devices on dedicated manufacturing processes. The average figures measured are insertion loss 5 dB, loss non-uniformity 3 dB, polarization dependent loss 0.6 dB, polarization dependent wavelength shift of 0.3 nm, with reduced footprint. The performance comparison between multiplexers with and without metal mirrors, for both polarizations, is provided. Several dies were measured, and the passband features for the multiplexers are analyzed, giving a reference on the process variations for future designers.
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Submitted 19 June, 2015;
originally announced June 2015.
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Two-port multimode interference reflectors based on aluminium mirrors in a thick SOI platform
Authors:
Javier S. Fandiño,
José D. Doménech,
Pascual Muñoz
Abstract:
Multimode interference reflectors (MIRs) were recently introduced as a new type of photonic integrated devices for on-chip, broadband light reflection. In the original proposal, different MIRs were demonstrated based on total internal reflection mirrors made of two deep-etched facets. Although simpler to fabricate, this approach imposes certain limits on the shape of the field pattern at the refle…
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Multimode interference reflectors (MIRs) were recently introduced as a new type of photonic integrated devices for on-chip, broadband light reflection. In the original proposal, different MIRs were demonstrated based on total internal reflection mirrors made of two deep-etched facets. Although simpler to fabricate, this approach imposes certain limits on the shape of the field pattern at the reflecting facets, which in turn restricts the types of MIRs that can be implemented. In this work, we propose and experimentally demonstrate the use of aluminium-based mirrors for the design of 2-port MIRs with variable reflectivity. These mirrors do not impose any restrictions on the incident field, and thus give more flexibility at the design stage. Different devices with reflectivities between~0~and~0.5 were fabricated in a 3~um thick SOI platform, and characterization of multiple dies was performed to extract statistical data about their performance. Our measurements show that, on average, losses both in the aluminium mirror and in the access waveguides reduce the reflectivities to about~79\% of their target value. Moreover, standard deviations lower than $\pm$5\% are obtained over a 20~nm wavelength range (1540-1560~nm). We also provide a theoretical modelling of the aluminium mirror based on the effective index method and Fresnel equations in multilayer thin films, which shows good agreement with FDTD simulations.
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Submitted 7 April, 2015;
originally announced April 2015.
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Arbitrary coupling ratio multimode interference couplers in Silicon-on-Insulator
Authors:
José David Doménech,
Javier S. Fandiño,
Bernardo Gargallo,
Pascual Muñoz
Abstract:
In this paper we present the design, manufacturing, characterization and analysis of the coupling ratio spectral response for Multimode Interference (MMI) couplers in Silicon-on-Insulator (SOI) technology. The couplers were designed using a Si rib waveguide with SiO 2 cladding, on a regular 220 nm film and 2 μm buried oxide SOI wafer. A set of eight different designs, three canonical and five usin…
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In this paper we present the design, manufacturing, characterization and analysis of the coupling ratio spectral response for Multimode Interference (MMI) couplers in Silicon-on-Insulator (SOI) technology. The couplers were designed using a Si rib waveguide with SiO 2 cladding, on a regular 220 nm film and 2 μm buried oxide SOI wafer. A set of eight different designs, three canonical and five using a widened/narrowed coupler body, have been subject of study, with coupling ratios 50:50, 85:15 and 72:28 for the former, and 95:05, 85:15, 75:25, 65:35 and 55:45 for the latter. Two wafers of devices were fabricated, using two different etch depths for the rib waveguides. A set of six dies, three per wafer, whose line metrology matched the design, were retained for characterization. The coupling ratios obtained in the experimental results match, with little deviations, the design targets for a wavelength range between 1525 and 1575 nm, as inferred from spectral measurements and statistical analyses. Excess loss for all the devices is conservatively estimated to be less than approximately 2 dB. All the design parameters, body width and length, input/output positions and widths, and tapers dimensions are disclosed for reference.
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Submitted 23 May, 2014;
originally announced May 2014.
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Silicon graphene Bragg gratings
Authors:
Jose Capmany,
David Domenech,
Pascual Munoz
Abstract:
We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.
We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.
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Submitted 27 December, 2013;
originally announced December 2013.
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Silicon graphene waveguide tunable broadband microwave photonics phase shifter
Authors:
Jose Capmany,
David Domenech,
Pascual Muñoz
Abstract:
We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifte based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360 degree radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.
We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifte based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360 degree radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.
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Submitted 26 December, 2013;
originally announced December 2013.
