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Carbon Irradiated SI-GaAs for Photoconductive THz Detection
Authors:
Abhishek Singh,
Sanjoy Pal,
Harshad Surdi,
S. S. Prabhu,
Mathimalar S.,
Vandana Nanal,
R. G. Pillay,
G. H. Dohler
Abstract:
We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012…
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We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.
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Submitted 21 September, 2014;
originally announced September 2014.
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Improved Efficiency of Photoconductive THz Emitters by Increasing the Effective Contact Length of Electrodes
Authors:
Abhishek Singh,
Harshad Surdi,
V. V. Nikesh,
S. S. Prabhu,
G. H. Döhler
Abstract:
We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on th…
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We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We partially etch out 500 nm thick layer of SI-GaAs in grating like pattern with various periods before the contact deposition. By depositing the electrodes on the patterned surface, the electrodes follow the contour of the grating period. This increases the effective contact length of the electrodes per unit area of the active regions on the PCE. The maxima of the electric field amplitude of the THz pulses emitted from the patterned surface are enhanced by up to more than a factor 2 as compared to an un-patterned surface. We attribute this increase to the increase of the effective contact length of the electrode due to surface patterning.
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Submitted 28 June, 2013;
originally announced June 2013.
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Arrayed Continuous-wave THz Photomixers
Authors:
S. T. Bauerschmidt,
S. Malzer,
G. H. Döhler,
H. Lu,
A. C. Gossard,
S. Preu
Abstract:
We present both chip-scale and free space coherent arrays of continuous-wave THz photomixers. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. The constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of NxN while reducing the beam widt…
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We present both chip-scale and free space coherent arrays of continuous-wave THz photomixers. By altering the relative phases of the exciting laser signals, the relative THz phase between the array elements can be tuned, allowing for beam steering. The constructive interference of the emission of N elements leads to an increase of the focal intensity by a factor of NxN while reducing the beam width by ~1/N, below the diffraction limit of a single source. Such array architectures strongly improve the THz power distribution for stand-off spectroscopy and imaging systems while providing a huge bandwidth at the same time. We demonstrate this by beam profiles generated by a free space 2x2 and a 4x1 array for a transmission distance of 4.2 meters. Spectra between 70 GHz and 1.1 THz have been recorded with these arrays.
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Submitted 21 May, 2013;
originally announced May 2013.
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On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs
Authors:
S. Loth,
M. Wenderoth,
R. G. Ulbrich,
S. Malzer,
G. H. Döhler
Abstract:
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function…
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The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.
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Submitted 22 August, 2007;
originally announced August 2007.
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Bulk and contact-sensitized photocarrier generation in single layer TPD devices
Authors:
Debdutta Ray,
Meghan P. Patankar,
Gottfried H. Dohler,
K. L. Narasimhan
Abstract:
In this paper, we report on the photoelectronic properties of TPD studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the hole mobility and "tau" the carrier trap** time. The "mew-tau" product is a measure of the electronic quality of the material and allows a quantitative comparison of d…
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In this paper, we report on the photoelectronic properties of TPD studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the hole mobility and "tau" the carrier trap** time. The "mew-tau" product is a measure of the electronic quality of the material and allows a quantitative comparison of different samples. We have carried out numerical simulations to understand the photocurrent in these structures. We show that in reverse bias, the photocurrent (PC) is due to bulk. The carrier generation is governed by field assisted exciton dissociation at electric fields greater than 10^6 V/cm. At lower fields the generation of carriers occurs spontaneously in the bulk of the sample. In forward bias, the photocurrent is due to exciton dissociation at the ITO contact. We also obtain a "mew-tau" product for holes from forward bias PC measurements which is in agreement with the value obtained from reverse bias measurements. Based on our experiments, we demonstrate that TPD in a sandwich structure is a good candidate for cheap large area solar blind UV detector arrays.
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Submitted 7 August, 2006;
originally announced August 2006.
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Probing electrodynamical properties of the edge states in a quantum Hall system by surface photovoltage spectroscopy
Authors:
B. Karmakar,
G. H. Dohler,
B. M. Arora
Abstract:
An importent question regarding the dissipation-less current carried by the edge states in a quantum Hall system is understanding the results of the electrodynamical interaction among the mobile electrons in the quantum mechanical limit under a magnetic field B. The interaction affects the transport parameters, the transverse electric field and the electron velocity. We have developed a new surf…
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An importent question regarding the dissipation-less current carried by the edge states in a quantum Hall system is understanding the results of the electrodynamical interaction among the mobile electrons in the quantum mechanical limit under a magnetic field B. The interaction affects the transport parameters, the transverse electric field and the electron velocity. We have developed a new surface photovoltage spectroscopic technique to measure the parameters from the transition energies between the electron and heavy hole edge states. We observe that the measured electron velocity and transverse (Hall) electric field increase as B^{1/2} and B^{3/2} respectively.
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Submitted 11 May, 2005;
originally announced May 2005.
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Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors
Authors:
M. Beck,
C. Metzner,
S. Malzer,
G. H. Döhler
Abstract:
We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation po…
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We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.
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Submitted 26 April, 2005;
originally announced April 2005.
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Intersubband gain in a Bloch oscillator and Quantum cascade laser
Authors:
Harald Willenberg,
Gottfried H. Dohler,
Jerome Faist
Abstract:
The link between the inversion gain of quantum cascade structures and the Bloch gain in periodic superlattices is presented. The proposed theoretical model based on the density matrix formalism is able to treat the gain mechanism of the Bloch oscillator and Quantum cascade laser on the same footing by taking into account in-plane momentum relaxation. The model predicts a dispersive contribution…
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The link between the inversion gain of quantum cascade structures and the Bloch gain in periodic superlattices is presented. The proposed theoretical model based on the density matrix formalism is able to treat the gain mechanism of the Bloch oscillator and Quantum cascade laser on the same footing by taking into account in-plane momentum relaxation. The model predicts a dispersive contribution in addition to the (usual) population-inversion-dependent intersubband gain in quantum cascade structures and - in the absence of inversion - provides the quantum mechanical description for the dispersive gain in superlattices. It corroborates the predictions of the semi-classical miniband picture, according to which gain is predicted for photon energies lower than the Bloch oscillation frequency, whereas net absorption is expected at higher photon energies, as a description which is valid in the high-temperature limit. A red-shift of the amplified emission with respect to the resonant transition energy results from the dispersive gain contribution in any intersubband transition, for which the population inversion is small.
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Submitted 16 May, 2002;
originally announced May 2002.
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Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field
Authors:
J. Soubusta,
R. Grill,
P. Hlidek,
M. Zvara,
L. Smrcka,
S. Malzer,
W. Geisselbrecht,
G. H. Dohler
Abstract:
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band…
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The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band regime. The experimental data are presented for an MBE-grown DQW consisting of two 5 nm wide GaAs wells, separated by a 4 monolayers (MLs) wide pure AlAs central barrier, and sandwiched between Ga_{0.7}Al_{0.3}As layers. The bias voltage is applied along the growth direction. Spatially direct and indirect excitonic transitions are identified, and the radius of the exciton and squeezing of the exciton in the growth direction are evaluated variationally. The excitonic binding energies, recombination energies, oscillator strengths, and relative intensities of the transitions as functions of the applied field are calculated. Our analysis demonstrates that this simple model is applicable in case of narrow DQWs not just for a qualitative description of the PL peak positions but also for the estimation of their individual shapes and intensities.
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Submitted 14 June, 1999;
originally announced June 1999.
