Record-high Anomalous Ettingshausen effect in a micron-sized magnetic Weyl semimetal on-chip cooler
Authors:
Mohammadali Razeghi,
Jean Spiece,
Valentin Fonck,
Yao Zhang,
Michael Rohde,
Rikkie Joris,
Philip S. Dobson,
Jonathan M. R. Weaver,
Lino da Costa Pereira,
Simon Granville,
Pascal Gehring
Abstract:
Solid-state cooling devices offer compact, quiet, reliable and environmentally friendly solutions that currently rely primarily on the thermoelectric (TE) effect. Despite more than two centuries of research, classical thermoelectric coolers suffer from low efficiency which hampers wider application. In this study, the less researched Anomalous Ettingshausen effect (AEE), a transverse thermoelectri…
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Solid-state cooling devices offer compact, quiet, reliable and environmentally friendly solutions that currently rely primarily on the thermoelectric (TE) effect. Despite more than two centuries of research, classical thermoelectric coolers suffer from low efficiency which hampers wider application. In this study, the less researched Anomalous Ettingshausen effect (AEE), a transverse thermoelectric phenomenon, is presented as a new approach for on-chip cooling. This effect can be boosted in materials with non-trivial band topologies as demonstrated in the Heusler alloy $\text{Co}_2\text{MnGa}$. Enabled by the high quality of our material, in situ scanning thermal microscopy experiments reveal a record-breaking anomalous Ettingshausen coefficient of $-2.1$~mV in $μ$m-sized on-chip cooling devices at room temperature. A significant 44\% of the effect is contributed by the intrinsic topological properties, in particular the Berry curvature of $\text{Co}_2\text{MnGa}$, emphasising the unique potential of magnetic Weyl semimetals for high-performance spot cooling in nanostructures.
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Submitted 20 March, 2024;
originally announced March 2024.
Single-material MoS$_{2}$ thermoelectric junction enabled by substrate engineering
Authors:
Mohammadali Razeghi,
Jean Spiece,
Oğuzhan Oğuz,
Doruk Pehlivanoğlu,
Yubin Huang,
Ali Sheraz,
Phillip S. Dobson,
Jonathan M. R. Weaver,
Pascal Gehring,
T. Serkan Kasırga
Abstract:
To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by do**, which renders difficult when working with two-dimensional (2d) materials. Here, we employ substrate effects to form a thermoelectric junction in ultra-thin few-layer MoS2 films. We invest…
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To realize a thermoelectric power generator, typically a junction between two materials with different Seebeck coefficient needs to be fabricated. Such difference in Seebeck coefficients can be induced by do**, which renders difficult when working with two-dimensional (2d) materials. Here, we employ substrate effects to form a thermoelectric junction in ultra-thin few-layer MoS2 films. We investigated the junctions with a combination of scanning photocurrent microscopy and scanning thermal microscopy. This allows us to reveal that thermoelectric junctions form across the substrate-engineered parts. We attribute this to a gating effect induced by interfacial charges in combination with alterations in the electron-phonon scattering mechanisms. This work demonstrates that substrate engineering is a promising strategy to develop future compact thin-film thermoelectric power generators.
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Submitted 3 January, 2023;
originally announced January 2023.
