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Mechanism of charge transfer and electrostatic field fluctuations in high entropy metallic alloys
Authors:
Wai-Ga D. Ho,
Wasim Raja Mondal,
Hanna Terletska,
Ka-Ming Tam,
Mariia Karabin,
Markus Eisenbach,
Yang Wang,
Vladimir Dobrosavljevic
Abstract:
High entropy alloys present a new class of disordered metals which hold promising prospects for the next generation of materials and technology. However, much of the basic physics underlying these robust, multifunctional materials -- and those of other, more generic forms of disordered matter -- still remain the subject of ongoing inquiry. We thus present a minimal-working model that describes the…
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High entropy alloys present a new class of disordered metals which hold promising prospects for the next generation of materials and technology. However, much of the basic physics underlying these robust, multifunctional materials -- and those of other, more generic forms of disordered matter -- still remain the subject of ongoing inquiry. We thus present a minimal-working model that describes the disorder-driven fluctuations in the electronic charge distributions and electrostatic "Madelung" fields in disordered metals. Our theory follows a standard perturbative scheme and captures the leading contributions from dominant electronic processes, including electrostatic screening and impurity scattering events. We show here that a modest first-order treatment incorporating these effects is sufficient to reproduce the linear charge transfer trends featured in both high-entropy and other conventional alloys, our model also shedding light on the microscopic origins of these statistical features. We further elaborate on the nature of these electronic charge and Madelung field fluctuations by determining how these emerge from the statistics of the underlying disorder, and how these can be described using the linear response formulation that we develop here. In doing so, our work answers various questions which have long-perplexed the disordered materials community. It also opens up possible avenues for providing systematic corrections to modern first-principles approaches to disorder-modeling (e.g. the conventional CPA method) which currently lack these statistical features.
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Submitted 24 November, 2023;
originally announced November 2023.
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A diamond anvil microassembly for Joule heating and electrical measurements up to 150 GPa and 4000 K
Authors:
Zachary M. Geballe,
Suzy M. Vitale,
**g Yang,
Francesca Miozzi,
Vasilije V. Dobrosavljevic,
Michael J. Walter
Abstract:
When diamond anvil cell (DAC) sample chambers are outfitted with both thermal insulation and electrodes, two cutting-edge experimental methods are enabled: Joule heating with spectroradiometric temperature measurement, and electrical resistance measurements of samples heated to thousands of kelvin. The accuracy of temperature and resistance measurements, however, often suffers from poor control of…
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When diamond anvil cell (DAC) sample chambers are outfitted with both thermal insulation and electrodes, two cutting-edge experimental methods are enabled: Joule heating with spectroradiometric temperature measurement, and electrical resistance measurements of samples heated to thousands of kelvin. The accuracy of temperature and resistance measurements, however, often suffers from poor control of the shape and location of the sample, electrodes, and thermal insulation. Here, we present a recipe for the reproducible and precise fabrication of DAC sample, electrodes, and thermal insulation using a three-layer microassembly. The microassembly contains two potassium chloride thermal insulation layers, four electrical leads, a sample, and a buttressing layer made of polycrystalline alumina. The sample, innermost electrodes, and buttress layer are fabricated by focused-ion-beam milling. Three iron samples are presented as proof of concept. Each is successfully compressed and pulsed Joule heated while maintaining a four-point probe configuration. The highest pressure-temperature condition achieved is $\sim 150$ GPa and $\sim 4000$ K.
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Submitted 27 October, 2023;
originally announced October 2023.
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Relevance of long-range screening in Mott transition examined via a hydrogen lattice
Authors:
Zi-Jian Lang,
Sudeshna Sen,
Pak Ki Henry Tsang,
Kristjan Haule,
Vladimir Dobrosavljević,
Wei Ku
Abstract:
The Mott transition, a metal-insulator transition due to strong electronic interaction, is observed in many materials without an accompanying change of system symmetry. An important open question in Mott's proposal is the role of long-range screening, whose drastic change across the quantum phase transition may self-consistently make the transition more abrupt, toward a first-order one. Here we in…
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The Mott transition, a metal-insulator transition due to strong electronic interaction, is observed in many materials without an accompanying change of system symmetry. An important open question in Mott's proposal is the role of long-range screening, whose drastic change across the quantum phase transition may self-consistently make the transition more abrupt, toward a first-order one. Here we investigate this effect in a model system of hydrogen atoms in a cubic lattice, using charge self-consistent dynamical mean-field theory that incorporates approximately the long-range interaction within the density functional treatment. We found that the system is well within the charge-transfer regime and that the charge-transfer gap intimately related to the Mott transition closes smoothly instead. This indicates that within this approximation, the long-range screening does not play an essential role in this prototypical example. We explain this finding by demonstrating analytically that the obtained insulating phase in this typical case is driven by short-range physics of large energy scale, and the transition is controlled by the charge-transfer gap closing, both insensitive to long-range screening.
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Submitted 27 August, 2023;
originally announced August 2023.
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Universal scaling near band-tuned metal-insulator phase transitions
Authors:
Simone Fratini,
Sergio Ciuchi,
Vladimir Dobrosavljevic,
Louk Rademaker
Abstract:
We present a theory for band-tuned metal-insulator transitions based on the Kubo formalism. Such a transition exhibits scaling of the resistivity curves, in the regime where $Tτ>1$ or $μτ>1$, where $τ$ is the scattering time and $μ$ the chemical potential. At the critical value of the chemical potential, the resistivity diverges as a power law, $R_c \sim 1/T$. Consequently, on the metallic side th…
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We present a theory for band-tuned metal-insulator transitions based on the Kubo formalism. Such a transition exhibits scaling of the resistivity curves, in the regime where $Tτ>1$ or $μτ>1$, where $τ$ is the scattering time and $μ$ the chemical potential. At the critical value of the chemical potential, the resistivity diverges as a power law, $R_c \sim 1/T$. Consequently, on the metallic side there is a regime with negative $dR/dT$, which is often misinterpreted as insulating. We show that scaling and this `fake insulator' regime is observed in a wide range of experimental systems. In particular, we show that Mooij correlations in high-temperature metals with negative $dR/dT$ can be quantitatively understood with our scaling theory in the presence of $T$-linear scattering.
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Submitted 18 July, 2023;
originally announced July 2023.
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Quantum critical phase of FeO spans conditions of Earth's lower mantle
Authors:
Wai-Ga D. Ho,
Peng Zhang,
Kristjan Haule,
Jennifer M. Jackson,
Vladimir Dobrosavljevic,
Vasilije V. Dobrosavljevic
Abstract:
Earth's interior consists primarily of an insulating rocky mantle and a metallic iron-dominant core. Recent work has shown that mountain-scale structures at the core-mantle boundary may be highly enriched in FeO reported to exhibit high conductivity and metallic behavior at extreme pressure-temperature (P-T) conditions. However, the underlying electronic processes in FeO remain poorly understood a…
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Earth's interior consists primarily of an insulating rocky mantle and a metallic iron-dominant core. Recent work has shown that mountain-scale structures at the core-mantle boundary may be highly enriched in FeO reported to exhibit high conductivity and metallic behavior at extreme pressure-temperature (P-T) conditions. However, the underlying electronic processes in FeO remain poorly understood and controversial. Here we systematically explore the electronic structure of B1-FeO at extreme conditions with large-scale theoretical modeling using state-of-the-art embedded dynamical mean field theory (eDMFT). Fine sampling of the phase diagram at more than 350 volume-temperature conditions reveals that, instead of sharp metallization, compression of FeO at high temperatures induces a gradual orbitally selective insulator-metal transition. Specifically, at P-T conditions of the lower mantle, FeO exists in an intermediate "quantum critical" state, characteristic of strongly correlated electronic matter. Transport in this regime, distinct from insulating or metallic behavior, is marked by incoherent diffusion of electrons in the conducting t_{2g} orbital and a band gap in the e_g orbital, resulting in moderate electrical conductivity (~ 10^5 S/m) with modest P -T dependence as observed in experiments. FeO-rich regions in Earth's lowermost mantle could thus influence electromagnetic interactions between the mantle and the core, producing several features observed in Earth's rotation and magnetic field evolution.
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Submitted 11 January, 2023;
originally announced January 2023.
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Do** a Wigner-Mott insulator: Exotic charge orders in transition-metal dichalcogenide moiré heterobilayers
Authors:
Yuting Tan,
Pak Ki Henry Tsang,
Vladimir Dobrosavljević,
Louk Rademaker
Abstract:
The moiré pattern induced by lattice mismatch in transition-metal dichalcogenide heterobilayers causes the formation of flat bands, where interactions dominate the kinetic energy. At fractional fillings of the flat valence band, the long-range electron interactions then induce Wigner-Mott crystals. In this Letter we investigate the nontrivial electronic phases appearing away from commensurate fill…
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The moiré pattern induced by lattice mismatch in transition-metal dichalcogenide heterobilayers causes the formation of flat bands, where interactions dominate the kinetic energy. At fractional fillings of the flat valence band, the long-range electron interactions then induce Wigner-Mott crystals. In this Letter we investigate the nontrivial electronic phases appearing away from commensurate fillings. Here, competing phases arise that are either characterized as doped Wigner-Mott charge transfer insulators or alternatively, a novel state with frozen charge order yet is conducting: the 'electron slush'. We propose that an extremely spatially inhomogeneous local density of states can serve as a key signature of the electron slush.
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Submitted 5 December, 2023; v1 submitted 14 October, 2022;
originally announced October 2022.
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How to recognize the universal aspects of Mott criticality?
Authors:
Yuting Tan,
Vladimir Dobrosavljevic,
Louk Rademaker
Abstract:
In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is…
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In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notable, on the metallic side a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT) and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.
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Submitted 30 June, 2022; v1 submitted 4 June, 2022;
originally announced June 2022.
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Ab initio Approaches to High Entropy Alloys: A Comparison of CPA, SQS, and Supercell Methods
Authors:
Mariia Karabin,
Wasim Mondal,
Andreas Ostlin,
Wai-Ga D. Ho,
Vladimir Dobrosavljevic,
Ka-Ming Tam,
Hanna Terletska,
Liviu Chioncel,
Yang Wang,
Markus Eisenbach
Abstract:
We present a comparative study of different modeling approaches to the electronic properties of the $\textrm{Hf}_{0.05}\textrm{Nb}_{0.05}\textrm{Ta}_{0.8}\textrm{Ti}_{0.05}\textrm{Zr}_{0.05}$ high entropy alloy. Common to our modeling is the methodology to compute the one-particle Green's function in the framework of density functional theory. We demonstrate that the special quasi-random structure…
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We present a comparative study of different modeling approaches to the electronic properties of the $\textrm{Hf}_{0.05}\textrm{Nb}_{0.05}\textrm{Ta}_{0.8}\textrm{Ti}_{0.05}\textrm{Zr}_{0.05}$ high entropy alloy. Common to our modeling is the methodology to compute the one-particle Green's function in the framework of density functional theory. We demonstrate that the special quasi-random structures modeling and the supercell, i.e. the locally self-consistent multiple-scatering methods provide very similar results for the ground state properties such as the spectral function (density of states) and the equilibrium lattice parameter. To reconcile the multiple-scattering single-site coherent potential approximation with the real space supercell methods, we included the effect of screening of the net charges of the alloy components. Based on the analysis of the total energy and spectral functions computed within the density functional theory, we found no signature for the long-range or local magnetic moments formation in the $\textrm{Hf}_{0.05}\textrm{Nb}_{0.05}\textrm{Ta}_{0.8}\textrm{Ti}_{0.05}\textrm{Zr}_{0.05}$ high entropy alloy, instead we find possible superconductivity below $\sim 9$K.
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Submitted 29 March, 2022;
originally announced March 2022.
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Disorder-dominated quantum criticality in moiré bilayers
Authors:
Yuting Tan,
Pak Ki Henry Tsang,
V. Dobrosavljević
Abstract:
Moiré bilayer materials have recently attracted much attention following the discovery of various correlated insulating states at specific band fillings. Here we discuss the metal-insulator transitions (MITs) that have been observed in the same devices, but at fillings far from the strongly correlated regime dominated by Mott-like physics, displaying many similarities to other examples of disorder…
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Moiré bilayer materials have recently attracted much attention following the discovery of various correlated insulating states at specific band fillings. Here we discuss the metal-insulator transitions (MITs) that have been observed in the same devices, but at fillings far from the strongly correlated regime dominated by Mott-like physics, displaying many similarities to other examples of disorder-dominated MITs. We propose a minimal theoretical model describing the interplay of interactions and disorder, which able to capture most experimental trends observed on several devices.
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Submitted 5 December, 2022; v1 submitted 21 December, 2021;
originally announced December 2021.
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Mott domain walls: a (strongly) non-Fermi liquid state of matter
Authors:
Tsung-Han Lee,
J. Vučičević,
D. Tanasković,
E. Miranda,
V. Dobrosavljević
Abstract:
Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments, displaying unusual properties. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they neither resemble a typical metal nor a stand…
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Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments, displaying unusual properties. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they neither resemble a typical metal nor a standard insulator, displaying unfamiliar temperature dependence of (local) transport properties. Here we take a closer look at such domain wall matter by examining an appropriate unstable solution of the Hubbard model. We show that transport in this regime is dominated by the emergence of "resilient quasiparticles" displaying strong non-Fermi liquid features, reflecting the quantum-critical fluctuations in the vicinity of the Mott point.
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Submitted 4 October, 2022; v1 submitted 10 November, 2021;
originally announced November 2021.
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Quantum-embedding description of the Anderson lattice model with the ghost Gutzwiller Approximation
Authors:
Marius S. Frank,
Tsung-Han Lee,
Gargee Bhattacharyya,
Pak Ki Henry Tsang,
Victor L. Quito,
Vladimir Dobrosavljević,
Ove Christiansen,
Nicola Lanatà
Abstract:
We present benchmark calculations of the Anderson lattice model based on the recently-developed "ghost Gutzwiller approximation". Our analysis shows that, in some parameters regimes, the predictions of the standard Gutzwiller approximation can be incorrect by orders of magnitude for this model. We show that this is caused by the inability of this method to describe simultaneously the Mott physics…
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We present benchmark calculations of the Anderson lattice model based on the recently-developed "ghost Gutzwiller approximation". Our analysis shows that, in some parameters regimes, the predictions of the standard Gutzwiller approximation can be incorrect by orders of magnitude for this model. We show that this is caused by the inability of this method to describe simultaneously the Mott physics and the hybridization between correlated and itinerant degrees of freedom (whose interplay often governs the metal-insulator transition in real materials). Finally, we show that the ghost Gutzwiller approximation solves this problem, providing us with results in remarkable agreement with dynamical mean field theory throughout the entire phase diagram, while being much less computationally demanding. We provide an analytical explanation of these findings and discuss their implications within the context of ab-initio computation of strongly-correlated matter.
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Submitted 24 July, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
Authors:
A. A. Shashkin,
M. Yu. Melnikov,
V. T. Dolgopolov,
M. M. Radonjić,
V. Dobrosavljević,
S. -H. Huang,
C. W. Liu,
Amy Y. X. Zhu,
S. V. Kravchenko
Abstract:
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is…
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The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect.
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Submitted 24 March, 2022; v1 submitted 10 June, 2021;
originally announced June 2021.
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Rise and Fall of Landau's Quasiparticles While Approaching the Mott Transition
Authors:
Andrej Pustogow,
Yohei Saito,
Anja Löhle,
Miriam Sanz Alonso,
Atsushi Kawamoto,
Vladimir Dobrosavljević,
Martin Dressel,
Simone Fratini
Abstract:
Landau suggested that the low-temperature properties of metals can be understood in terms of long-lived quasiparticles with all complex interactions included in Fermi-liquid parameters, such as the effective mass $m^{\star}$. Despite its wide applicability, electronic transport in bad or strange metals and unconventional superconductors is controversially discussed towards a possible collapse of t…
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Landau suggested that the low-temperature properties of metals can be understood in terms of long-lived quasiparticles with all complex interactions included in Fermi-liquid parameters, such as the effective mass $m^{\star}$. Despite its wide applicability, electronic transport in bad or strange metals and unconventional superconductors is controversially discussed towards a possible collapse of the quasiparticle concept. Here we explore the electrodynamic response of correlated metals at half filling for varying correlation strength upon approaching a Mott insulator. We reveal persistent Fermi-liquid behavior with pronounced quadratic dependences of the optical scattering rate on temperature and frequency, along with a puzzling elastic contribution to relaxation. The strong increase of the resistivity beyond the Ioffe-Regel-Mott limit is accompanied by a `displaced Drude peak' in the optical conductivity. Our results, supported by a theoretical model for the optical response, demonstrate the emergence of a bad metal from resilient quasiparticles that are subject to dynamical localization and dissolve near the Mott transition.
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Submitted 18 January, 2021;
originally announced January 2021.
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Unusually thick metal-insulator domain walls around the Mott point
Authors:
M. Y. Suárez-Villagrán,
N. Mitsakos,
Tsung-Han Lee,
J. H. Miller, Jr.,
E. Miranda,
V. Dobrosavljević
Abstract:
Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of the respective phases, which are separated by surprisingly thick, or fat, domain walls, as revealed both by imaging experiments and recent theoretical modeling.…
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Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of the respective phases, which are separated by surprisingly thick, or fat, domain walls, as revealed both by imaging experiments and recent theoretical modeling. To gain insight into this unexpected behavior, we perform a systematic model study of the structure of such metal-insulator domain walls around the Mott point, within the dynamical mean-field theory framework. Our study reveals that a mechanism producing such "fat" domain walls can be traced to strong magnetic frustration, which is expected to be a robust feature of "spin-liquid" Mott systems.
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Submitted 11 October, 2021; v1 submitted 25 November, 2020;
originally announced November 2020.
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Bypassing the computational bottleneck of quantum-embedding theories for strong electron correlations with machine learning
Authors:
John Rogers,
Tsung-Han Lee,
Sahar Pakdel,
Wenhu Xu,
Vladimir Dobrosavljević,
Yong-Xin Yao,
Ove Christiansen,
Nicola Lanatà
Abstract:
A cardinal obstacle to performing quantum-mechanical simulations of strongly-correlated matter is that, with the theoretical tools presently available, sufficiently-accurate computations are often too expensive to be ever feasible. Here we design a computational framework combining quantum-embedding (QE) methods with machine learning. This allows us to bypass altogether the most computationally-ex…
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A cardinal obstacle to performing quantum-mechanical simulations of strongly-correlated matter is that, with the theoretical tools presently available, sufficiently-accurate computations are often too expensive to be ever feasible. Here we design a computational framework combining quantum-embedding (QE) methods with machine learning. This allows us to bypass altogether the most computationally-expensive components of QE algorithms, making their overall cost comparable to bare Density Functional Theory (DFT). We perform benchmark calculations of a series of actinide systems, where our method describes accurately the correlation effects, reducing by orders of magnitude the computational cost. We argue that, by producing a larger-scale set of training data, it will be possible to apply our method to systems with arbitrary stoichiometries and crystal structures, paving the way to virtually infinite applications in condensed matter physics, chemistry and materials science.
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Submitted 26 June, 2020;
originally announced June 2020.
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Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
Authors:
A. A. Shashkin,
M. Yu. Melnikov,
V. T. Dolgopolov,
M. Radonjić,
V. Dobrosavljević,
S. -H. Huang,
C. W. Liu,
A. Y. X. Zhu,
S. V. Kravchenko
Abstract:
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of…
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We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
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Submitted 26 August, 2020; v1 submitted 30 April, 2020;
originally announced April 2020.
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Phase coexistence at the first-order Mott-transition revealed by pressure-dependent dielectric spectroscopy of $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$
Authors:
R. Rösslhuber,
A. Pustogow,
E. Uykur,
A. Böhme,
A. Löhle,
R. Hübner,
J. Schlueter,
Y. Tan,
V. Dobrosavljević,
M. Dressel
Abstract:
The dimer Mott insulator $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ single crystals as a function of temperature (down to $T=8$ K) and pressure (up to $p=4$ kbar). At ambient conditions, a relaxor-like…
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The dimer Mott insulator $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ single crystals as a function of temperature (down to $T=8$ K) and pressure (up to $p=4$ kbar). At ambient conditions, a relaxor-like dielectric behavior develops below 50 K that shifts toward lower temperatures as the crystal is pressurized. Interestingly, a second peak emerges in $\varepsilon_{1}(T)$ around $T=15$ K, which becomes strongly enhanced with pressure and is attributed to a small volume fraction of metallic puddles in the insulating host phase. When approaching the phase boundary, this peak diverges rapidly reaching $\varepsilon_{1} \approx 10^{5}$. Our dynamical mean-field theory calculations substantiate that the dielectric catastrophe at the Mott transition is not caused by closing the energy gap, but due to the spatial coexistence of correlated metallic and insulating regions. We discuss the percolative nature of the first-order Mott insulator-to-metal transition in all details.
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Submitted 10 March, 2021; v1 submitted 27 November, 2019;
originally announced November 2019.
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Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS$_2$
Authors:
Byoung Hee Moon,
Gang Hee Han,
Miloš M. Radonjić,
Hyun** Ji,
Vladimir Dobrosavljević
Abstract:
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition…
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The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition (MIT), revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground for the study of strong correlation physics, which should open an exciting avenue for future research, making a parallel with recent advances in twisted bilayer graphene
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Submitted 11 November, 2019; v1 submitted 7 November, 2019;
originally announced November 2019.
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The two-dimensional disordered Mott metal-insulator transition
Authors:
M. Y. Suárez-Villagrán,
N. Mitsakos,
Tsung-Han Lee,
V. Dobrosavljević,
J. H. Miller, Jr.,
E. Miranda
Abstract:
We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through the Statistical Dynamical Mean-Field Theory (statDMFT). This theory is a natural extension of the Dynamical Mean-Fi…
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We studied several aspects of the Mott metal-insulator transition in the disordered case. The model on which we based our analysis is the disordered Hubbard model, which is the simplest model capable of capturing the Mott metal-insulator transition. We investigated this model through the Statistical Dynamical Mean-Field Theory (statDMFT). This theory is a natural extension of the Dynamical Mean-Field Theory (DMFT), which has been used with relative success in the last several years with the purpose of describing the Mott transition in the clean case. As is the case for the latter theory, the statDMFT incorporates the electronic correlation effects only in their local manifestations. Disorder, on the other hand, is treated in such a way as to incorporate Anderson localization effects. With this technique, we analyzed the disordered two-dimensional Mott transition, using Quantum Monte Carlo to solve the associated single-impurity problems. We found spinodal lines at which the metal and insulator cease to be meta-stable. We also studied spatial fluctuations of local quantities, such as the self-energy and the local Green's function, and showed the appearance of metallic regions within the insulator and vice-versa. We carried out an analysis of finite-size effects and showed that, in agreement with the theorems of Imry and Ma, the first-order transition is smeared in the thermodynamic limit. We analyzed transport properties by means of a map** to a random classical resistor network and calculated both the average current and its distribution across the metal-insulator transition.
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Submitted 5 June, 2020; v1 submitted 12 August, 2019;
originally announced August 2019.
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Low-Temperature Dielectric Anomalies at the Mott Insulator-Metal Transition
Authors:
A. Pustogow,
R. Rösslhuber,
Y. Tan,
E. Uykur,
M. Wenzel,
A. Böhme,
A. Löhle,
R. Hübner,
Y. Saito,
A. Kawamoto,
J. A. Schlueter,
V. Dobrosavljević,
M. Dressel
Abstract:
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- and temperature-dependent dielectric response of the Mott insulator $κ$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the…
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The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- and temperature-dependent dielectric response of the Mott insulator $κ$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the Fermi-liquid state by applying external pressure and chemical substitution of the donor molecules. At low temperatures the coexistence region at the first-order transition leads to a strong enhancement of the quasi-static dielectric constant $ε_1$ when the effective correlations are tuned through the critical value. Several dynamical regimes are identified around the Mott point and vividly mapped through pronounced permittivity crossovers. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory.
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Submitted 28 November, 2019; v1 submitted 9 July, 2019;
originally announced July 2019.
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Fragility of the Kondo insulating gap against disorder: relevance to recent puzzles in topological Kondo insulators
Authors:
Sudeshna Sen,
N. S. Vidhyadhiraja,
Eduardo Miranda,
Vladimir Dobrosavljević,
Wei Ku
Abstract:
Kondo insulators are strongly correlated system in which a clean insulating gap emerges only at very low temperature due to many-body effects involving localized $f$-electrons. However, certain Kondo insulators, like SmB$_6$ and Ce${_3}$Bi${_4}$Pt${_3}$, display metallic behaviors at extremely low temperatures, that have defied current understanding. Recent advances in topological effects in mater…
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Kondo insulators are strongly correlated system in which a clean insulating gap emerges only at very low temperature due to many-body effects involving localized $f$-electrons. However, certain Kondo insulators, like SmB$_6$ and Ce${_3}$Bi${_4}$Pt${_3}$, display metallic behaviors at extremely low temperatures, that have defied current understanding. Recent advances in topological effects in materials has raised the attention on the protected surface states in these "topological Kondo insulators" as a potential resolution to some of the puzzling behaviors. Here we resolve these puzzles via a different route, by showing that the emergent Kondo insulating scale is extremely vulnerable against moderate degree of disorder, such that the gap is filled with a small number of states. Therefore, the real samples are probably never truly insulating and this in turn compromises the essential building block of topological considerations. Our results suggest strongly that systems like the Slater insulators would be a more promising direction to extend the realm of topology to strongly correlated systems.
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Submitted 15 August, 2020; v1 submitted 30 July, 2018;
originally announced July 2018.
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Uncovering the Origin of Divergence in the CsM(CrO$_4$)$_2$ (M = La, Pr, Nd, Sm, Eu; Am) Family through Examination of the Chemical Bonding in a Molecular Cluster and by Band Structure Analysis
Authors:
Shane S. Galley,
Alexandra A. Arico,
Tsung-Han Lee,
Xiaoyu Deng,
Yong-Xin Yao,
Joseph M. Sperling,
Vanessa Proust,
Julia S. Storbeck,
Vladimir Dobrosavljevic,
Jennifer N. Neu,
Theo Siegrist,
Ryan E. Baumbach,
Thomas E. Albrecht-Schmitt,
Nikolas Kaltsoyannis,
Nicola Lanata
Abstract:
A series of f-block chromates, CsM(CrO$_4$)$_2$ (M = La, Pr, Nd, Sm, Eu; Am), were prepared revealing notable differences between the AmIII derivatives and their lanthanide analogs. While all compounds form similar layered structures, the americium compound exhibits polymorphism and adopts both a structure isomorphous with the early lanthanides as well as one that possesses lower symmetry. Both po…
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A series of f-block chromates, CsM(CrO$_4$)$_2$ (M = La, Pr, Nd, Sm, Eu; Am), were prepared revealing notable differences between the AmIII derivatives and their lanthanide analogs. While all compounds form similar layered structures, the americium compound exhibits polymorphism and adopts both a structure isomorphous with the early lanthanides as well as one that possesses lower symmetry. Both polymorphs are dark red and possess band gaps that are smaller than the LnIII compounds. In order to probe the origin of these differences, the electronic structure of $α$-CsSm(CrO$_4$)$_2$, $α$-CsEu(CrO$_4$)$_2$ and $α$-CsAm(CrO$_4$)$_2$ were studied using both a molecular cluster approach featuring hybrid density functional theory and QTAIM analysis, and by the periodic LDA+GA and LDA+DMFT methods. Notably, the covalent contributions to bonding by the f orbitals was found to be more than twice as large in the AmIII chromate than in the SmIII and EuIII compounds, and even larger in magnitude than the Am-5f spin-orbit splitting in this system. Our analysis indicates also that the Am-O covalency in $α$-CsAm(CrO$_4$)$_2$ is driven by the degeneracy of the 5f and 2p orbitals, and not by orbital overlap.
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Submitted 20 March, 2018;
originally announced March 2018.
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Low-Energy Excitations in Quantum Spin-Liquids Identified by Optical Spectroscopy
Authors:
A. Pustogow,
Y. Saito,
E. Zhukova,
B. Gorshunov,
R. Kato,
T. -H. Lee,
S. Fratini,
V. Dobrosavljević,
M. Dressel
Abstract:
The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the Hubbard bands, distinct in-gap excitations can be identified at low temperatures and frequencies which we attribute to the quantum spin liquid state. For the strong…
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The electrodynamic response of organic spin liquids with highly-frustrated triangular lattices has been measured in a wide energy range. While the overall optical spectra of these Mott insulators are governed by transitions between the Hubbard bands, distinct in-gap excitations can be identified at low temperatures and frequencies which we attribute to the quantum spin liquid state. For the strongly correlated $β^{\prime}$-EtMe$_3$\-Sb\-[Pd(dmit)$_2$]$_2$, we discover enhanced conductivity below $175~{\rm cm}^{-1}$, comparable to the energy of the magnetic coupling $J\approx 250$ K. For $ω\rightarrow 0$ these low-frequency excitations vanish faster than the charge-carrier response subject to Mott-Hubbard correlations, resulting in a dome-shape band peaked at 100~\cm. Possible relations to spinons, magnons and disorder are discussed.
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Submitted 7 August, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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The origin of Mooij correlations in disordered metals
Authors:
Sergio Ciuchi,
Domenico Di Sante,
Vladimir Dobrosavljević,
Simone Fratini
Abstract:
Sufficiently disordered metals display systematic deviations from the behavior predicted by semi-classical Boltzmann transport theory. Here the scattering events from impurities or thermal excitations can no longer be considered as additive independent processes, as asserted by Matthiessen's rule following from this picture. In the intermediate region between the regime of good conduction and that…
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Sufficiently disordered metals display systematic deviations from the behavior predicted by semi-classical Boltzmann transport theory. Here the scattering events from impurities or thermal excitations can no longer be considered as additive independent processes, as asserted by Matthiessen's rule following from this picture. In the intermediate region between the regime of good conduction and that of insulation, one typically finds a change of sign of the temperature coefficient of resistivity (TCR), even at elevated temperature spanning ambient conditions, a phenomenology that was first identified by Mooij in 1973. Traditional weak coupling approaches to identify relevant corrections to the Boltzmann picture focused on long distance interference effects such as "weak localization", which are especially important in low dimensions (1D, 2D) and close to the zero temperature limit. Here we formulate a strong-coupling approach to tackle the interplay of strong disorder and lattice deformations (phonons) in bulk three-dimensional metals at high temperatures. We identify a polaronic mechanism of strong disorder renormalization, which describes how a lattice locally responds to the relevant impurity potential. This mechanism, which quantitatively captures the Mooij regime, is physically distinct and unrelated to Anderson localization, but realizes early seminal ideas of Anderson himself, concerning the interplay of disorder and lattice deformations.
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Submitted 12 September, 2018; v1 submitted 31 January, 2018;
originally announced February 2018.
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Critical role of electronic correlations in determining crystal structure of transition metal compounds
Authors:
Nicola Lanatà,
Tsung-Han Lee,
Yong-Xin Yao,
Vladan Stevanović,
Vladimir Dobrosavljević
Abstract:
The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spat…
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The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spatial arrangements of the atoms. Remarkably, we find that the main qualitative features of this complex behavior can be traced back to simple electrostatics, i.e., to the fact that the strong $d$-electron correlations influence substantially the charge transfer mechanism, which, in turn, controls the electrostatic interactions. This result advances our understanding of the influence of strong correlations on the crystal structure, opens a new avenue for extending structure prediction methodologies to strongly correlated materials, and paves the way for predicting and studying metastability and polymorphism in these systems.
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Submitted 27 February, 2018; v1 submitted 23 October, 2017;
originally announced October 2017.
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Quantum Spin Liquids Unveil the Genuine Mott State
Authors:
A. Pustogow,
M. Bories,
A. Löhle,
R. Rösslhuber,
E. Zhukova,
B. Gorshunov,
S. Tomić,
J. A. Schlueter,
R. Hübner,
T. Hiramatsu,
Y. Yoshida,
G. Saito,
R. Kato,
T. -H. Lee,
V. Dobrosavljević,
S. Fratini,
M. Dressel
Abstract:
The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of thr…
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The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of three organic quantum spin liquids with different degrees of effective correlation, where the absence of magnetic order enables unique insight into the nature of the genuine Mott state down to the most relevant low-temperature region. Combining optical spectroscopy with pressure-dependent dc transport and theoretical calculations, we succeeded to construct a phase diagram valid for all Mott insulators on a quantitative scale. In the vicinity of the low-temperature phase boundary, we discover metallic fluctuations within the Mott gap, exhibiting enhanced absorption upon cooling that is not present in antiferromagnetic Mott insulators. Our findings reveal the phase coexistence region and Pomeranchuk-like anomaly of the Mott transition, previously predicted but never observed.
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Submitted 19 October, 2017;
originally announced October 2017.
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Multiple crossovers and coherent states in a Mott-Peierls insulator
Authors:
O. Nájera,
M. Civelli,
V. Dobrosavljević,
M. J. Rozenberg
Abstract:
We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic ev…
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We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic evolution of the electronic structure across the phase diagram. We found that at low intra-dimer hop** the emerging local magnetic moments can unbind above a characteristic singlet temperature $T^*$. Upon increasing the inter-dimer hop** subtle changes occur in the electronic structure. Notably, we find Hubbard bands of a mix character with coherent and incoherent excitations. We argue that this state is relevant for VO$_2$ and its signatures may be observed in spectroscopic studies, and possibly through pump-probe experiments.
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Submitted 20 October, 2017; v1 submitted 28 July, 2017;
originally announced July 2017.
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Emergent Bloch Excitations in Mott Matter
Authors:
Nicola Lanatà,
Tsung-Han Lee,
Yongxin Yao,
Vladimir Dobrosavljević
Abstract:
We develop a unified theoretical picture for excitations in Mott systems, portraying both the heavy quasiparticle excitations and the Hubbard bands as features of an emergent Fermi liquid state formed in an extended Hilbert space, which is non-perturbatively connected to the physical system. This observation sheds light on the fact that even the incoherent excitations in strongly correlated matter…
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We develop a unified theoretical picture for excitations in Mott systems, portraying both the heavy quasiparticle excitations and the Hubbard bands as features of an emergent Fermi liquid state formed in an extended Hilbert space, which is non-perturbatively connected to the physical system. This observation sheds light on the fact that even the incoherent excitations in strongly correlated matter often display a well defined Bloch character, with pronounced momentum dispersion. Furthermore, it indicates that the Mott point can be viewed as a topological transition, where the number of distinct dispersing bands displays a sudden change at the critical point. Our results, obtained from an appropriate variational principle, display also remarkable quantitative accuracy. This opens an exciting avenue for fast realistic modeling of strongly correlated materials.
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Submitted 22 July, 2017; v1 submitted 19 January, 2017;
originally announced January 2017.
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First-principles-based method for electron localization: Application to monolayer hexagonal boron nitride
Authors:
C. Ekuma,
V. Dobrosavljević,
D. Gunlycke
Abstract:
We present a first-principles-based many-body typical medium dynamical cluster approximation method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of a boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculati…
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We present a first-principles-based many-body typical medium dynamical cluster approximation method for characterizing electron localization in disordered structures. This method applied to monolayer hexagonal boron nitride shows that the presence of a boron vacancies could turn this wide-gap insulator into a correlated metal. Depending on the strength of the electron interactions, these calculations suggest that conduction could be obtained at a boron vacancy concentration as low as $1.0\%$. We also explore the distribution of the local density of states, a fingerprint of spatial variations, which allows localized and delocalized states to be distinguished. The presented method enables the study of disorder-driven insulator-metal transitions not only in $h$-BN but also in other physical materials.
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Submitted 22 March, 2017; v1 submitted 13 January, 2017;
originally announced January 2017.
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Fate of spinons at the Mott point
Authors:
Tsung-Han Lee,
Serge Florens,
Vladimir Dobrosavljevic
Abstract:
Gapless spin liquids have recently been observed in several frustrated Mott insulators, with elementary spin excitations - "spinons" - reminiscent of degenerate Fermi systems. However, their precise role at the Mott point, where charge fluctuations begin to proliferate, remains controversial and ill-understood. Here we present the simplest theoretical framework that treats the dynamics of emergent…
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Gapless spin liquids have recently been observed in several frustrated Mott insulators, with elementary spin excitations - "spinons" - reminiscent of degenerate Fermi systems. However, their precise role at the Mott point, where charge fluctuations begin to proliferate, remains controversial and ill-understood. Here we present the simplest theoretical framework that treats the dynamics of emergent spin and charge excitations on the same footing, providing a new physical picture of the Mott metal-insulator transition at half filing. We identify a generic orthogonality mechanism leading to strong dam** of spinons, arising as soon as the Mott gap closes. Our results indicates that spinons should not play a significant role within the high-temperature quantum critical regime above the Mott point - in striking agreement with all available experiments.
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Submitted 21 September, 2016; v1 submitted 4 July, 2016;
originally announced July 2016.
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Slave Boson Theory of Orbital Differentiation with Crystal Field Effects: Application to UO$_2$
Authors:
Nicola Lanatà,
Yongxin Yao,
Xiaoyu Deng,
Vladimir Dobrosavljević,
Gabriel Kotliar
Abstract:
We derive an exact operatorial reformulation of the rotational invariant slave boson method and we apply it to describe the orbital differentiation in strongly correlated electron systems starting from first principles. The approach enables us to treat strong electron correlations, spin-orbit coupling and crystal field splittings on the same footing by exploiting the gauge invariance of the mean-f…
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We derive an exact operatorial reformulation of the rotational invariant slave boson method and we apply it to describe the orbital differentiation in strongly correlated electron systems starting from first principles. The approach enables us to treat strong electron correlations, spin-orbit coupling and crystal field splittings on the same footing by exploiting the gauge invariance of the mean-field equations. We apply our theory to the archetypical nuclear fuel UO$_2$, and show that the ground state of this system displays a pronounced orbital differention within the $5f$ manifold, with Mott localized $Γ_8$ and extended $Γ_7$ electrons.
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Submitted 12 February, 2017; v1 submitted 30 June, 2016;
originally announced June 2016.
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Resolving the VO$_2$ controversy: Mott mechanism dominates the insulator-to-metal transition
Authors:
Óscar Nájera,
Marcello Civelli,
Vladimir Dobrosavljević,
Marcelo J. Rozenberg
Abstract:
We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our resul…
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We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO$_2$ is compatible with a Mott electronic mechanism, providing fresh insight to a long standing "chicken-and-egg" debate and calling for further research of "Mottronics" applications of this system.
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Submitted 11 January, 2017; v1 submitted 9 June, 2016;
originally announced June 2016.
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Suppressed Density of States in Self-Generated Coulomb Glasses
Authors:
Louk Rademaker,
Zohar Nussinov,
Leon Balents,
Vladimir Dobrosavljevic
Abstract:
We investigate the structure of metastable states in self-generated Coulomb glasses. In dramatic contrast to disordered electron glasses, we find that these states lack marginal stability. Such absence of marginal stability is reflected by the suppression of the single-particle density of states into an exponentially soft gap of the form $g(ε) \sim e^{-V / ξ|ε|}$. To analytically explain this beha…
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We investigate the structure of metastable states in self-generated Coulomb glasses. In dramatic contrast to disordered electron glasses, we find that these states lack marginal stability. Such absence of marginal stability is reflected by the suppression of the single-particle density of states into an exponentially soft gap of the form $g(ε) \sim e^{-V / ξ|ε|}$. To analytically explain this behavior, we extend the stability criterion of Efros and Shklovskii to incorporate local charge correlations, in qualitative agreement with our numerical findings. Our work suggests the existence of a new class of self-generated glasses dominated by strong geometric frustration.
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Submitted 14 June, 2018; v1 submitted 6 May, 2016;
originally announced May 2016.
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Disorder-driven metal-insulator transitions in deformable lattices
Authors:
Domenico Di Sante,
Simone Fratini,
Vladimir Dobrosavljević,
Sergio Ciuchi
Abstract:
We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which refle…
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We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which reflects disorder-enhanced polaron formation, is here given a microscopic basis by treating the lattice deformations and Anderson localization effects on the same footing. We identify an intermediate "bad insulator" transport regime which displays resistivity values exceeding the Mott-Ioffe-Regel limit and with a negative temperature coefficient, as often observed in strongly disordered metals. Our calculations reveal that this behavior originates from significant temperature-induced rearrangements of electronic states due to enhanced interaction effects close to the disorder-driven MIT.
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Submitted 5 January, 2017; v1 submitted 26 April, 2016;
originally announced April 2016.
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Wigner-Mott quantum criticality: from 2D-MIT to 3He and Mott organics
Authors:
V. Dobrosavljevic,
D. Tanaskovic
Abstract:
Experiments performed over the last twenty years have revealed striking similarities between several two-dimensional (2D) fermion systems, including diluted two-dimensional electron liquids in semiconductors, 3He monolayers, and layered organic charge-transfer salts. These experimental results, together with recent theoretical advances, provide compelling evidence that strong electronic correlatio…
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Experiments performed over the last twenty years have revealed striking similarities between several two-dimensional (2D) fermion systems, including diluted two-dimensional electron liquids in semiconductors, 3He monolayers, and layered organic charge-transfer salts. These experimental results, together with recent theoretical advances, provide compelling evidence that strong electronic correlations - Wigner-Mott physics - dominate the universal features of the corresponding metal-insulator transitions (MIT). Here we review the recent theoretical work exploring quantum criticality of Mott and Wigner-Mott transitions, and argue that most puzzling features of the experiments find natural and physically transparent interpretation based on this perspective.
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Submitted 17 December, 2016; v1 submitted 30 January, 2016;
originally announced February 2016.
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Strong correlations generically protect d-wave superconductivity against disorder
Authors:
Shao Tang,
V. Dobrosavljevic,
E. Miranda
Abstract:
We address the question of why strongly correlated d-wave superconductors, such as the cuprates, prove to be surprisingly robust against the introduction of non-magnetic impurities. We show that, very generally, both the pair-breaking and the normal state transport scattering rates are significantly suppressed by strong correlations effects arising in the proximity to a Mott insulating state. We a…
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We address the question of why strongly correlated d-wave superconductors, such as the cuprates, prove to be surprisingly robust against the introduction of non-magnetic impurities. We show that, very generally, both the pair-breaking and the normal state transport scattering rates are significantly suppressed by strong correlations effects arising in the proximity to a Mott insulating state. We also show that the correlation-renormalized scattering amplitude is generically enhanced in the forward direction, an effect which was previously often ascribed to the specific scattering by charged impurities outside the copper-oxide planes.
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Submitted 28 October, 2015; v1 submitted 27 October, 2015;
originally announced October 2015.
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Metal to insulator quantum-phase transition in few-layered ReS$_2$
Authors:
Nihar R. Pradhan,
Amber McCreary,
Daniel Rhodes,
Zhengguang Lu,
Simin Feng,
Efstratios Manousakis,
Dmitry Smirnov,
Raju Namburu,
Madan Dubey,
Angela R. Hight Walker,
Humberto Terrones,
Mauricio Terrones,
Vladimir Dobrosavljevic,
Luis Balicas
Abstract:
In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties o…
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In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electronic structure might host a non-trivial topology. Here, we report an overall evaluation of the anisotropic Raman response and the transport properties of few-layered ReS$_2$ field-effect transistors. We find that ReS$_2$ exfoliated on SiO$_2$ behaves as an $n$-type semiconductor with an intrinsic carrier mobility surpassing $μ_i$ ~30 cm$^2$/Vs at $T = 300$ K which increases up to ~350 cm$^2$/Vs at 2 K. Semiconducting behavior is observed at low electron densities $n$, but at high values of n the resistivity decreases by a factor > 7 upon cooling to 2 K and displays a metallic $T^2$-dependence. This indicates that the band structure of 1T$^{\prime}$-ReS$_2$ is quite susceptible to an electric field applied perpendicularly to the layers. The electric-field induced metallic state observed in transition metal dichalcogenides was recently claimed to result from a percolation type of transition. Instead, through a scaling analysis of the conductivity as a function of $T$ and $n$, we find that the metallic state of ReS$_2$ results from a second-order metal to insulator transition driven by electronic correlations. This gate-induced metallic state offers an alternative to phase engineering for producing ohmic contacts and metallic interconnects in devices based on transition metal dichalcogenides.
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Submitted 7 October, 2015;
originally announced October 2015.
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Avoiding Stripe Order: Emergence of the Supercooled Electron Liquid
Authors:
Louk Rademaker,
Arnaud Ralko,
Simone Fratini,
Vladimir Dobrosavljevic
Abstract:
In the absence of disorder, electrons can display glassy behavior through supercooling the liquid state, avoiding the solidification into a charge ordered state. Such supercooled electron liquids are experimentally found in organic $θ$-$MM'$ compounds. We present theoretical results that qualitatively capture the experimental findings. At intermediate temperatures, the conducting state crosses ove…
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In the absence of disorder, electrons can display glassy behavior through supercooling the liquid state, avoiding the solidification into a charge ordered state. Such supercooled electron liquids are experimentally found in organic $θ$-$MM'$ compounds. We present theoretical results that qualitatively capture the experimental findings. At intermediate temperatures, the conducting state crosses over into a weakly insulating pseudogap phase. The stripe order phase transition is first order, so that the liquid phase is metastable below $T_s$. In the supercooled liquid phase the resistivity increases further and the density of states at the Fermi level is suppressed, indicating kinetic arrest and the formation of a glassy state. Our results are obtained using classical Extended Dynamical Mean Field Theory.
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Submitted 15 February, 2016; v1 submitted 12 August, 2015;
originally announced August 2015.
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Anderson localization effects near the Mott metal-insulator transition
Authors:
Helena Braganca,
M. C. O. Aguiar,
J. Vucicevic,
D. Tanaskovic,
V. Dobrosavljevic
Abstract:
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties…
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The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar as in the clean case. However, as we increase disorder Anderson localization effects are responsible for shrinking the coexistence region and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.
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Submitted 24 September, 2015; v1 submitted 15 July, 2015;
originally announced July 2015.
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Landau-Ginzburg Theory for Anderson localization
Authors:
Samiyeh Mahmoudian,
Vladimir Dobrosavljević
Abstract:
The Typical Medium Theory provides conceptually the simplest order parameter description of Anderson localization by self-consistently calculating the geometrically-averaged (typical) local density of states (LDOS). Here we show how spatial correlations can also be captured within such a self-consistent theory, by utilizing the standard Landau method of allowing for (slow) spatial fluctuations of…
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The Typical Medium Theory provides conceptually the simplest order parameter description of Anderson localization by self-consistently calculating the geometrically-averaged (typical) local density of states (LDOS). Here we show how spatial correlations can also be captured within such a self-consistent theory, by utilizing the standard Landau method of allowing for (slow) spatial fluctuations of the order parameter, and performing an appropriate gradient expansion. Our theoretical results provide insight into recent STM experiments, which were used to visualize the spatially fluctuating electronic wave functions near the metal insulator transition in $Ga_{1-x}Mn_{x}As.$ We show that, within our theory, all features of the experiment can be accounted for by considering a model of disorder renormalized by long-range Coulomb interactions. This includes the pseudogap formation, the $C(R)\sim\frac{1}{R}$ form of the LDOS autocorrelations function, and the $ζ\sim\frac{1}{E}$ energy dependence of the correlation length at criticality.
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Submitted 2 March, 2015;
originally announced March 2015.
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Bad-metal behavior reveals Mott quantum criticality in doped Hubbard models
Authors:
J. Vucicevic,
D. Tanaskovic,
M. Rozenberg,
V. Dobrosavljevic
Abstract:
Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott p…
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Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through Dynamical Mean-Field Theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transition are confined to extremely low temperatures, while clear signatures of Mott quantum criticality emerge across much of the phase diagram. Remarkable scaling behavior is identified for the entire family of resistivity curves, with a quantum critical region covering the entire BM regime, providing not only insight, but also quantitative understanding around the MIR limit, in agreement with the available experiments.
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Submitted 25 June, 2015; v1 submitted 26 December, 2014;
originally announced December 2014.
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Glassy dynamics in geometrically frustrated Coulomb liquids without disorder
Authors:
Samiyeh Mahmoudian,
Louk Rademaker,
Arnaud Ralko,
Simone Fratini,
Vladimir Dobrosavljević
Abstract:
We show that introducing long-range Coulomb interactions immediately lifts the massive ground state degeneracy induced by geometric frustration for electrons on quarter-filled triangular lattices in the classical limit. Important consequences include the stabilization of a stripe-ordered crystalline (global) ground state, but also the emergence of very many low-lying metastable states with amorpho…
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We show that introducing long-range Coulomb interactions immediately lifts the massive ground state degeneracy induced by geometric frustration for electrons on quarter-filled triangular lattices in the classical limit. Important consequences include the stabilization of a stripe-ordered crystalline (global) ground state, but also the emergence of very many low-lying metastable states with amorphous "stripe-glass" spatial structures. Melting of the stripe order thus leads to a frustrated Coulomb liquid at intermediate temperatures, showing remarkably slow (viscous) dynamics, with very long relaxation times growing in Arrhenius fashion upon cooling, as typical of strong glass formers. On shorter time scales, the system falls out of equilibrium and displays the aging phenomena characteristic of supercooled liquids above the glass transition. Our results show remarkable similarity with the recent observations of charge-glass behavior in ultra-clean triangular organic materials of the $θ$-(BEDT-TTF)$_2$ family.
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Submitted 16 April, 2015; v1 submitted 14 December, 2014;
originally announced December 2014.
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Non-Fermi-Liquid Behavior in Metallic Quasicrystals with Local Magnetic Moments
Authors:
Eric C. Andrade,
Anuradha Jagannathan,
Eduardo Miranda,
Matthias Vojta,
Vladimir Dobrosavljević
Abstract:
Motivated by the intrinsic non-Fermi-liquid behavior observed in the heavy-fermion quasicrystal $\mbox{Au}_{51}\mbox{Al}_{34}\mbox{Yb}_{15}$, we study the low-temperature behavior of dilute magnetic impurities placed in metallic quasicrystals. We find that a large fraction of the magnetic moments are not quenched down to very low temperatures $T$, leading to a power-law distribution of Kondo tempe…
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Motivated by the intrinsic non-Fermi-liquid behavior observed in the heavy-fermion quasicrystal $\mbox{Au}_{51}\mbox{Al}_{34}\mbox{Yb}_{15}$, we study the low-temperature behavior of dilute magnetic impurities placed in metallic quasicrystals. We find that a large fraction of the magnetic moments are not quenched down to very low temperatures $T$, leading to a power-law distribution of Kondo temperatures $P(T_{\mbox{K}})\sim T_{\mbox{K}}^{α-1}$, with a nonuniversal exponent $α$, in a remarkable similarity to the Kondo-disorder scenario found in disordered heavy-fermion metals. For $α<1$, the resulting singular $P(T_{\mbox{K}})$ induces non-Fermi-liquid behavior with diverging thermodynamic responses as $T\rightarrow0$.
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Submitted 15 July, 2015; v1 submitted 11 December, 2014;
originally announced December 2014.
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Strong-disorder renormalization group study of the Anderson localization transition in three and higher dimensions
Authors:
Hossein Javan Mard,
Jose A. Hoyos,
Eduardo Miranda,
Vladimir Dobrosavljevic
Abstract:
We implement an efficient strong-disorder renormalization-group (SDRG) procedure to study disordered tight-binding models in any dimension and on the Erdos-Renyi random graphs, which represent an appropriate infinite dimensional limit. Our SDRG algorithm is based on a judicious elimination of most (irrelevant) new bonds generated under RG. It yields excellent agreement with exact numerical results…
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We implement an efficient strong-disorder renormalization-group (SDRG) procedure to study disordered tight-binding models in any dimension and on the Erdos-Renyi random graphs, which represent an appropriate infinite dimensional limit. Our SDRG algorithm is based on a judicious elimination of most (irrelevant) new bonds generated under RG. It yields excellent agreement with exact numerical results for universal properties at the critical point without significant increase of computer time, and confirm that, for Anderson localization, the upper critical dimension duc = infinite. We find excellent convergence of the relevant 1/d expansion down to d=2, in contrast to the conventional 2+epsilon expansion, which has little to say about what happens in any d>3. We show that the mysterious mirror symmetry of the conductance scaling function is a genuine strong-coupling effect, as speculated in early work. This opens an efficient avenue to explore the critical properties of Anderson transition in the strong-coupling limit in high dimensions.
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Submitted 6 March, 2016; v1 submitted 11 December, 2014;
originally announced December 2014.
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Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$
Authors:
Xiaoyan Shi,
** V. Lin,
T. Sasagawa,
V. Dobrosavljević,
Dragana Popović
Abstract:
In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurement…
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In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurements in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$, providing striking evidence for quantum critical behavior of the resistivity -- the signature of a $H$-driven SIT. The transition is not direct: it is accompanied by the emergence of an intermediate state, which is a superconductor only at $T=0$. Our finding of a two-stage $H$-driven SIT goes beyond the conventional scenario in which a single quantum critical point separates the superconductor and the insulator in the presence of a perpendicular $H$. Similar two-stage $H$-driven SIT, in which both disorder and quantum phase fluctuations play an important role, may also be expected in other copper-oxide high-temperature superconductors.
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Submitted 2 December, 2014;
originally announced December 2014.
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Quantum criticality at the Anderson transition: a TMT perspective
Authors:
Samiyeh Mahmoudian,
Shao Tang,
Vladimir Dobrosavljević
Abstract:
We present a complete analytical and numerical solution of the Typical Medium Theory (TMT) for the Anderson metal-insulator transition. In this theory, we self-consistently calculate the typical amplitude of the electron wave-We present a complete analytical and numerical solution of the Typical Medium Theory (TMT) for the Anderson metal-insulator transition. This approach self-consistently calcul…
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We present a complete analytical and numerical solution of the Typical Medium Theory (TMT) for the Anderson metal-insulator transition. In this theory, we self-consistently calculate the typical amplitude of the electron wave-We present a complete analytical and numerical solution of the Typical Medium Theory (TMT) for the Anderson metal-insulator transition. This approach self-consistently calculates the typical amplitude of the electronic wave-functions, thus representing the conceptually simplest order-parameter theory for the Anderson transition. We identify all possible universality classes for the critical behavior, which can be found within such a mean-field approach. This provides insights into how interaction-induced renormalizations of the disorder potential may produce qualitative modifications of the critical behavior. We also formulate a simplified description of the leading critical behavior, thus obtaining an effective Landau theory for Anderson localization.
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Submitted 15 April, 2015; v1 submitted 17 November, 2014;
originally announced November 2014.
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Shock-waves and commutation speed of memristors
Authors:
Shao Tang,
Federico Tesler,
Fernando Gomez Marlasca,
Pablo Levy,
V. Dobrosavljević,
Marcelo Rozenberg
Abstract:
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the…
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Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report the striking result of a connection between the resistive switching and {\em shock wave} formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide based memristor device. The shock wave scenario brings unprecedented physical insight and enables to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect -- the commutation speed.
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Submitted 18 March, 2016; v1 submitted 15 November, 2014;
originally announced November 2014.
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Strong-disorder renormalization-group study of the one-dimensional tight-binding model
Authors:
Hossein Javan Mard,
J. A. Hoyos,
Eduardo Miranda,
Vladimir Dobrosavljevic
Abstract:
We formulate a strong-disorder renormalization-group (SDRG) approach to study the beta function of the tight-binding model in one dimension with both diagonal and off-diagonal disorder for states at the band center. We show that the SDRG method, when used to compute transport properties, yields exact results since it is identical to the transfer matrix method. The beta function is shown to be univ…
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We formulate a strong-disorder renormalization-group (SDRG) approach to study the beta function of the tight-binding model in one dimension with both diagonal and off-diagonal disorder for states at the band center. We show that the SDRG method, when used to compute transport properties, yields exact results since it is identical to the transfer matrix method. The beta function is shown to be universal when only off-diagonal disorder is present even though single-parameter scaling is known to be violated. A different single-parameter scaling theory is formulated for this particular (particle-hole symmetric) case. Upon breaking particle-hole symmetry (by adding diagonal disorder), the beta function is shown to crossover from the universal behavior of the particle-hole symmetric case to the conventional non-universal one in agreement with the two-parameter scaling theory. We finally draw an analogy with the random transverse-field Ising chain in the paramagnetic phase. The particle-hole symmetric case corresponds to the critical point of the quantum Ising model while the generic case corresponds to the Griffiths paramagnetic phase.
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Submitted 6 October, 2014; v1 submitted 4 April, 2014;
originally announced April 2014.
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Mottness-induced healing in strongly correlated superconductors
Authors:
Shao Tang,
E. Miranda,
V. Dobrosavljevic
Abstract:
We study impurity healing effects in models of strongly correlated superconductors. We show that in general both the range and the amplitude of the spatial variations caused by nonmagnetic impurities are significantly suppressed in the superconducting as well as in the normal states. We explicitly quantify the weights of the local and the non-local responses to inhomogeneities and show that the fo…
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We study impurity healing effects in models of strongly correlated superconductors. We show that in general both the range and the amplitude of the spatial variations caused by nonmagnetic impurities are significantly suppressed in the superconducting as well as in the normal states. We explicitly quantify the weights of the local and the non-local responses to inhomogeneities and show that the former are overwhelmingly dominant over the latter. By quantifying the spatial range of the local response, we show that it is restricted to only a few lattice spacings over a significant range of do**s in the vicinity of the Mott insulating state. We demonstrate that this healing effect is ultimately due to the suppression of charge fluctuations induced by Mottness. We also define and solve analytically a simplified yet accurate model of healing, within which we obtain simple expressions for quantities of direct experimental relevance.
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Submitted 8 January, 2015; v1 submitted 11 November, 2013;
originally announced November 2013.
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Charge avalanches and depinning in the Coulomb glass: The role of long-range interactions
Authors:
Juan Carlos Andresen,
Yohanes Pramudya,
Helmut G. Katzgraber,
Creighton K. Thomas,
Gergely T. Zimanyi,
V. Dobrosavljevic
Abstract:
We explore the stability of far-from-equilibrium metastable states of a three-dimensional Coulomb glass at zero temperature by studying charge avalanches triggered by a slowly varying external electric field. Surprisingly, we identify a sharply defined dynamical ("depinning") phase transition from stationary to nonstationary charge displacement at a critical value of the external electric field. U…
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We explore the stability of far-from-equilibrium metastable states of a three-dimensional Coulomb glass at zero temperature by studying charge avalanches triggered by a slowly varying external electric field. Surprisingly, we identify a sharply defined dynamical ("depinning") phase transition from stationary to nonstationary charge displacement at a critical value of the external electric field. Using particle-conserving dynamics, scale-free system-spanning avalanches are observed only at the critical field. We show that the qualitative features of this depinning transition are completely different for an equivalent short-range model, highlighting the key importance of long-range interactions for nonequilibrium dynamics of Coulomb glasses.
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Submitted 24 March, 2016; v1 submitted 11 September, 2013;
originally announced September 2013.