Nanosecond stochastic operation in perpendicular superparamagnetic tunnel junctions
Authors:
Lucile Soumah,
Louise Desplat,
Nhat-Tan Phan,
Ahmed Sidi El Valli,
Advait Madhavan,
Florian Disdier,
Stéphane Auffret,
Ricardo Sousa,
Ursula Ebels,
Philippe Talatchian
Abstract:
We demonstrate the miniaturization of perpendicularly magnetized superparamagnetic tunnel junctions (SMTJs) down to 50 nm in diameter. We experimentally show stochastic reversals in those junctions, with tunable mean dwell times down to a few nanoseconds through applied magnetic field and voltage. The mean dwell times measured at negligible bias voltage agree with our simulations based on Langer's…
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We demonstrate the miniaturization of perpendicularly magnetized superparamagnetic tunnel junctions (SMTJs) down to 50 nm in diameter. We experimentally show stochastic reversals in those junctions, with tunable mean dwell times down to a few nanoseconds through applied magnetic field and voltage. The mean dwell times measured at negligible bias voltage agree with our simulations based on Langer's theory. We shed light on an Arrhenius prefactor $τ_0$ of a few femtoseconds, implying that the rates of thermally-activated magnetic transitions exceed the GHz-to-THz limitation of macrospin models, whereby $τ_0\sim1$ ns. We explain the small prefactor values by a Meyer-Neldel compensation phenomenon, where the prefactor exhibits a large entropic contribution with an exponential dependence on the activation energy. These findings pave the way towards the development of ultrafast, low-power unconventional computing schemes operating by leveraging thermal noise in perpendicular SMTJs, which are scalable below 20 nm.
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Submitted 5 February, 2024;
originally announced February 2024.
Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy
Authors:
by J. Urrestarazu Larrañaga,
Naveen Sisodia,
Van Tuong Pham,
Ilaria Di Manici,
Aurélien Masseboeuf,
Kevin Garello,
Florian Disdier,
Bruno Fernandez,
Sebastian Wintz,
Markus Weigand,
Mohamed Belmeguenai,
Stefania Pizzini,
Ricardo Sousa,
Liliana Buda-Prejbeanu,
Gilles Gaudin,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regardi…
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Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current induced manipulation in industry compatible ultrathin films were first steps towards the realisation of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be further manipulated by both gate voltage and external magnetic field, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.
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Submitted 1 August, 2023;
originally announced August 2023.
