Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases
Authors:
Aubin JC. M. Prot,
Michele Melchiorre,
Felix Dingwell,
Anastasia Zelenina,
Hossam Elanzeery,
Alberto Lomuscio,
Thomas Dalibor,
Maxim Guc,
Robert Fonoll-Rubio,
Victor Izquierdo-Roca,
Gunnar Kusch,
Rachel A. Oliver,
Susanne Siebentritt
Abstract:
Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-re…
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Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-resolved photoluminescence (PL) measurements reveal two main radiative recombination paths at 1.04 eV and 1.5-1.6 eV, attributed to two phases of low and high band gap material, respectively. Instead of a continuous change in the band gap throughout the thickness of the absorber, we propose a model where discrete band gap phases interlace, creating an apparent gradient. Cathodoluminescence and Raman scattering spectroscopy confirm this result. Additionally, deep defects associated to the high gap phase reduce the absorber performance. Etching away the back part of the absorber leads to an increase of one order of magnitude in the PL intensity, i.e., 60 meV in quasi Fermi level splitting. Non-radiative voltage losses correlate linearly with the relative contribution of the high energy PL peak, suggesting that reducing the high gap phase could increase the open circuit voltage by up to 180 mV.
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Submitted 5 July, 2023;
originally announced July 2023.
On the origin of tail states and VOC losses in Cu(In,Ga)Se2
Authors:
Omar RamÃrez,
Jiro Nishinaga,
Felix Dingwell,
Taowen Wang,
Aubin Prot,
Max Hilaire Wolter,
Vibha Ranjan,
Susanne Siebentritt
Abstract:
The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail s…
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The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect of compositional variations and alkali incorporation into single crystals. The results demonstrate that alkalis decrease the density of tail states despite the absence of grain boundaries, suggesting that there is more to alkalis than just grain boundary effects. Moreover, an increase in do** as a result of alkali incorporation is shown to contribute to the reduced tail states, which are demonstrated to arise largely from electrostatic potential fluctuations and to be determined by grain interior properties. By analyzing the voltage loss in high-efficiency polycrystalline and single crystalline devices, this work presents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2 based on the combined effect of do** on tail states and VOC.
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Submitted 3 December, 2022;
originally announced December 2022.
