-
Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes
Authors:
I. Pallecchi,
F. Caglieris,
M. Ceccardi,
N. Manca,
D. Marre',
L. Repetto,
M. Schott,
D. I. Bilc,
S. Chaitoglou,
A. Dimoulas,
M. J. Verstraete
Abstract:
The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remar…
▽ More
The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by higher integration and interfaces which are atomically sharper and cleaner than conventional electronics. Among these functionalities, some VdWDs possess remarkable thermoelectric properties. SnSe2 has been identified as a promising thermoelectric material on the basis of its estimated electronic and transport properties. In this work we carry out experimental meas-urements of the electric and thermoelectric properties of SnSe2 flakes. For a 30 micron thick SnSe2 flake at room temperature, we measure electron mobility of 40 cm^2 V^-1 s^-1, a carrier density of 4 x 10^18 cm^-3, a Seebeck coefficient S around -400 microV/K and thermoelectric power factor around 0.35 mW m^-1 K^-2. The comparison of experimental results with theoretical calculations shows fair agreement and indicates that the dominant carrier scattering mechanisms are polar optical phonons at room temperature and ionized im-purities below 50 K. In order to explore possible improvement of the thermoelectric properties, we carry out reversible electrostatic do** on a thinner flake, in a field effect setup. On this 75 nm thick SnSe2 flake, we measure a field effect variation of the Seebeck coefficient of up to 290 % at low temperature, and a corresponding variation of the thermoelectric power factor of up to 1050 %. We find that the power factor increases with the depletion of n-type charge carriers. Field effect control of thermoelectric transport opens perspectives for boosting energy harvesting and novel switching technologies based on two-dimensional materials.
△ Less
Submitted 28 April, 2023;
originally announced April 2023.
-
Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion
Authors:
E. Longo,
L. Locatelli,
P. Tsipas,
A. Lintzeris,
A. Dimoulas,
M. Fanciulli,
M. Longo,
R. Mantovan
Abstract:
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (…
▽ More
Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here we report the full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. In order to exploit such ideal topologically-protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and spin-charge conversion (SCC) is probed by spin pum** ferromagnetic resonance. A large SCC is measured at room temperature, which is interpreted within the inverse Edelstein effect (IEE), thus resulting in a conversion efficiency lambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.
△ Less
Submitted 21 April, 2023;
originally announced April 2023.
-
Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces
Authors:
Emigdio Chavez-Angel,
Polychronis Tsipas,
Peng Xiao,
Mohammad Taghi Ahmadi,
Abdalghani Daaoub,
Hatef Sadeghi,
Clivia M. Sotomayor Torres,
Athanasios Dimoulas,
Alexandros El Sachat
Abstract:
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating ultra-thin thermal metamaterials based on crystalline lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistan…
▽ More
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating ultra-thin thermal metamaterials based on crystalline lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m^2K/GW) and ultralow cross-plane thermal conductivities (0.01-0.07 Wm^-1K^-1) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.
△ Less
Submitted 10 March, 2023;
originally announced March 2023.
-
Ultrafast spin-charge conversion at SnBi$_2$Te$_4$/Co topological insulator interfaces probed by terahertz emission spectroscopy
Authors:
E. Rongione,
S. Fragkos,
L. Baringthon,
J. Hawecker,
E. Xenogiannopoulou,
P. Tsipas,
C. Song,
M. Micica,
J. Mangeney,
J. Tignon,
T. Boulier,
N. Reyren,
R. Lebrun,
J. -M. George,
P. Lefèvre,
S. Dhillon,
A. Dimoulas,
H. Jaffres
Abstract:
Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insul…
▽ More
Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.
△ Less
Submitted 16 March, 2022;
originally announced March 2022.
-
Ferroelectric Tunneling Junctions for Edge Computing
Authors:
Erika Covi,
Quang T. Duong,
Suzanne Lancaster,
Viktor Havel,
Jean Coignus,
Justine Barbot,
Ole Richter,
Philip Klein,
Elisabetta Chicca,
Laurent Grenouillet,
Athanasios Dimoulas,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
△ Less
Submitted 5 July, 2021;
originally announced July 2021.
-
Surface-Enhanced Raman Spectroscopy of Graphene Integrated in Plasmonic Silicon Platforms with Three-Dimensional Nanotopography
Authors:
Maria Kanidi,
Alva Dagkli,
Nikolaos Kelaidis,
Dimitrios Palles,
Sigiava Aminalragia-Giamini,
Jose Marquez-Velasco,
Alan Colli,
Athanasios Dimoulas,
Elefterios Lidorikis,
Maria Kandyla,
Efstratios I. Kamitsos
Abstract:
Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of the remarkable mechanical properties of graphene to combine it with scalable 3D plasmonic nanostructured silicon substrates, which enhance the interaction of graphene with electromagnetic radiation. Large areas of femto…
▽ More
Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of the remarkable mechanical properties of graphene to combine it with scalable 3D plasmonic nanostructured silicon substrates, which enhance the interaction of graphene with electromagnetic radiation. Large areas of femtosecond laser-structured arrays of silicon nanopillars, decorated with gold nanoparticles, are integrated with graphene, which conforms to the substrate nanotopography. We obtain Raman spectra at 488, 514, 633, and 785 nm excitation wavelengths, spanning the entire visible range. For all excitation wavelengths, the Raman signal of graphene is enhanced by 2-3 orders of magnitude, similarly to the highest enhancements measured to date, concerning surface-enhanced Raman Spectroscopy (SERS) of graphene on plasmonic substrates. Moreover, in contrast to traditional deposition and lithographic methods, the fabrication method employed here relies on single-step, maskless, cost-effective, rapid laser processing of silicon in water, amenable to large-scale fabrication. Finite-difference time-domain simulations elucidate the advantages of the 3D topography of the substrate. Conformation of graphene to the Au-decorated silicon nanopillars enables graphene to sample near fields from an increased number of nanoparticles. Due to synergistic effects with the nanopillars, different nanoparticles become more active for different wavelengths and locations on the pillars, providing broadband enhancement. Nanostructured plasmonic silicon is a promising platform for integration with graphene and other 2D materials, for next-generation applications of large-area hybrid nanomaterials in the fields of sensing, photonics, optoelectronics, and medical diagnostics.
△ Less
Submitted 11 February, 2019;
originally announced February 2019.
-
Molecular Beam Epitaxy of thin HfTe2 semimetal films
Authors:
Sigiava Aminalragia-Giamini,
Jose Marquez-Velasco,
Polychronis Tsipas,
Dimitra Tsoutsou,
Gilles Renaud,
Athanasios Dimoulas
Abstract:
Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure…
▽ More
Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2 /AlN is an epitaxial topological Dirac semimetal.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates
Authors:
Md. Shahinur Rahman,
Evangelos K. Evangelou,
Nikos Konofaos,
A. Dimoulas
Abstract:
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trap** phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of t…
▽ More
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trap** phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mechanism that explains the dielectric degradations (current decay transient behavior) of the gate stack devices grown on high mobility substrates under CVS bias from low to higher fields, and which is unlike to those used for other MOS devices. Finally, the time dependent degradation of the corresponding devices revealed an initial current decay due to relaxation, followed by charge trap** and generation of stress-induced leakage which eventually lead to hard breakdown after long CVS stressing.
△ Less
Submitted 12 June, 2012; v1 submitted 8 June, 2012;
originally announced June 2012.
