Showing 1–7 of 7 results for author: Dimitrakopoulos, C

Infrared Spectroscopy of Wafer-Scale Graphene

Authors: Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, Phaedon Avouris

Abstract: We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphen… ▽ More We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, do** level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37\pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 \mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics. △ Less

Submitted 15 November, 2011; originally announced November 2011.

Comments: ACS Nano Just Accepted; http://dx.doi.org/10.1021/nn203506n, 2011

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Authors: Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins, Yanqing Wu, L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Christos Dimitrakopoulos, Phaedon Avouris

Abstract: This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene te… ▽ More This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Journal ref: IEEE Electron Device Letters vol. 32, pp. 1343-1345 (2011)

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Authors: Wenjuan Zhu, Christos Dimitrakopoulos, Marcus Freitag, Phaedon Avouris

Abstract: The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is reduced in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition… ▽ More The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is reduced in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition occurring at about 2 layers. The mobility increases with carrier density in thick graphene, similar to multi-layer graphene exfoliated from natural graphite, suggesting that the individual layers are still electrically coupled in spite of reports recording non-Bernal stacking order in C-face grown graphene. The Hall coefficient peak value is reduced in thick graphene due to the increased density of states. A reliable and rapid characterization tool for the layer number is therefore highly desirable. To date, AFM height determination and Raman scattering are typically used since the optical contrast of graphene on SiC is weak. However, both methods suffer from low throughput. We show that the scanning electron microscopy (SEM) contrast can give similar results with much higher throughput. △ Less

Submitted 20 September, 2011; originally announced September 2011.

Journal ref: IEEE Transactions on Nanotechnology, Vol. 10, No. 5, pp. 1196-1201, 2011

Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates

Authors: Timothy J. McArdle, Jack O. Chu, Yu Zhu, Zihong Liu, Mahadevaiyer Krishnan, Christopher M. Breslin, Christos Dimitrakopoulos, Robert Wisnieff, Alfred Grill

Abstract: We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reductio… ▽ More We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the non-polished samples. △ Less

Submitted 31 March, 2011; originally announced March 2011.

Comments: 12 pages, 3 figures, accepted in Applied Physics Letters

Journal ref: Applied Physics Letters 98, 132108 (2011)

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer, Shu-Jen Han, Yanqing Wu, Wenjuan Zhu, D. Kurt Gaskill, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., Alfred Grill, Phaedon Avouris

Abstract: Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport… ▽ More Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 13 pages, 3 figures, accepted in Appl. Phys. Lett

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Authors: Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Keith A. Jenkins, Yu Zhu, Zihong Liu, Timothy J. McArdle, John A. Ott, Robert Wisnieff, Phaedon Avouris

Abstract: Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, fo… ▽ More Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene. △ Less

Submitted 4 June, 2010; originally announced June 2010.

Comments: 30 pages (double line spacing). Submitted

Report number: IBM Research Report - RC24986

Journal ref: J. Vac. Sci. Technol. B 28, 985 (2010)

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins, Damon B. Farmer, Hsin-Ying Chiu, Alfred Grill, Phaedon Avouris

Abstract: High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate l… ▽ More High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics. △ Less

Submitted 19 February, 2010; originally announced February 2010.