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Hot electron dynamics in a semiconductor nanowire under intense THz excitation
Authors:
Andrei Luferau,
Maximilian Obst,
Stephan Winnerl,
Alexej Pashkin,
Susanne C. Kehr,
Emmanouil Dimakis,
Felix G. Kaps,
Osama Hatem,
Kalliopi Mavridou,
Lukas M. Eng,
Manfred Helm
Abstract:
We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distri…
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We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pum** at various power levels.
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Submitted 25 March, 2024;
originally announced March 2024.
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Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies
Authors:
Rakesh Rana,
Leila Balaghi,
Ivan Fotev,
Harald Schneider,
Manfred Helm,
Emmanouil Dimakis,
Alexej Pashkin
Abstract:
We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4…
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We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump / THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4 MV/cm. This behavior is attributed to the intervalley electron scattering resulting in the increase of the average electron effective mass and the corresponding decrease of the electron mobility by about 2 times at the highest fields. We demonstrate that the increase of the effective mass is non-uniform along the nanowires and takes place mainly in their middle part, leading to a spatially inhomogeneous carrier response. Our results quantify the nonlinear transport regime in GaAs-based nanowires and show their high potential for development of nano-devices operating at THz frequencies.
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Submitted 1 April, 2020;
originally announced April 2020.
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Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
Authors:
L. Balaghi,
G. Bussone,
R. Grifone,
R. Hübner,
J. Grenzer,
M. Ghorbani-Asl,
A. Krasheninnikov,
H. Schneider,
M. Helm,
E. Dimakis
Abstract:
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impos…
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The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures. The built-in strain in the core can be regulated via the composition and the thickness of the shell. Thick enough shells become almost strain-free, whereas the thin core undergoes a predominantly-hydrostatic tensile strain, which causes the reduction of the GaAs band gap energy. For the highest strain of 7 % in this work (obtained for x=0.54), a remarkable reduction of the band gap by 40 % was achieved in agreement with theoretical calculations. Such strong modulation of its electronic properties renders GaAs suitable for near-infrared nano-photonics and presumably high electron mobility nano-transistors.
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Submitted 28 March, 2018;
originally announced March 2018.
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Two-dimensional electron gas in monolayer InN quantum wells
Authors:
W. Pan,
E. Dimakis,
G. T. Wang,
T. D. Moustakas,
D. C. Tsui
Abstract:
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperat…
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We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
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Submitted 14 August, 2014;
originally announced August 2014.
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A Better Understanding of the Performance of Rate-1/2 Binary Turbo Codes that Use Odd-Even Interleavers
Authors:
Konstantinos S. Arkoudogiannis,
Christos E. Dimakis,
Konstantinos V. Koutsouvelis
Abstract:
The effects of the odd-even constraint - as an interleaver design criterion - on the performance of rate-1/2 binary turbo codes are revisited. According to the current understanding, its adoption is favored because it makes the information bits be uniformly protected, each one by its own parity bit. In this paper, we provide instances that contradict this point of view suggesting for a different e…
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The effects of the odd-even constraint - as an interleaver design criterion - on the performance of rate-1/2 binary turbo codes are revisited. According to the current understanding, its adoption is favored because it makes the information bits be uniformly protected, each one by its own parity bit. In this paper, we provide instances that contradict this point of view suggesting for a different explanation of the constraint's behavior, in terms of distance spectrum.
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Submitted 28 October, 2012;
originally announced October 2012.
