Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Authors:
Shivali Agrawal,
Len van Deurzen,
Jimy Encomendero,
Joseph E. Dill,
Hsin Wei,
Huang,
Vladimir Protasenko,
Huili,
Xing,
Debdeep Jena
Abstract:
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable…
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Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization do**. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization do** enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.
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Submitted 13 December, 2023;
originally announced December 2023.
