Showing 1–4 of 4 results for author: Dill, J

Neural Visibility Field for Uncertainty-Driven Active Map**

Authors: Shangjie Xue, Jesse Dill, Pranay Mathur, Frank Dellaert, Panagiotis Tsiotras, Danfei Xu

Abstract: This paper presents Neural Visibility Field (NVF), a novel uncertainty quantification method for Neural Radiance Fields (NeRF) applied to active map**. Our key insight is that regions not visible in the training views lead to inherently unreliable color predictions by NeRF at this region, resulting in increased uncertainty in the synthesized views. To address this, we propose to use Bayesian Net… ▽ More This paper presents Neural Visibility Field (NVF), a novel uncertainty quantification method for Neural Radiance Fields (NeRF) applied to active map**. Our key insight is that regions not visible in the training views lead to inherently unreliable color predictions by NeRF at this region, resulting in increased uncertainty in the synthesized views. To address this, we propose to use Bayesian Networks to composite position-based field uncertainty into ray-based uncertainty in camera observations. Consequently, NVF naturally assigns higher uncertainty to unobserved regions, aiding robots to select the most informative next viewpoints. Extensive evaluations show that NVF excels not only in uncertainty quantification but also in scene reconstruction for active map**, outperforming existing methods. △ Less

Submitted 15 June, 2024; v1 submitted 11 June, 2024; originally announced June 2024.

Comments: Accepted to CVPR 2024. More details can be found at https://sites.google.com/view/nvf-cvpr24/

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Authors: Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei, Huang, Vladimir Protasenko, Huili, Xing, Debdeep Jena

Abstract: Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable… ▽ More Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization do**. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization do** enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments. △ Less

Submitted 13 December, 2023; originally announced December 2023.

Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)

Authors: James M. Etheridge, Joseph Dill, Connor P. Dempsey, Mihir Pendharkar, Javier Garcia-Barriocanal, Guichuan Yu, Vlad S. Pribiag, Paul A. Crowell, Chris J. Palmstrøm

Abstract: We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane… ▽ More We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 5 figures

Photoemission-based microelectronic devices

Authors: Ebrahim Forati, Tyler J. Dill, Andrea Tao, Dan Sievenpiper

Abstract: The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength, and po… ▽ More The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength, and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface (metasurface) and a low-power infrared (IR) laser can cause enough photoemission (via electron tunneling) to implement feasible microelectronic devices such as transistors, switches, and modulators. Photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. △ Less

Submitted 19 April, 2016; v1 submitted 7 December, 2015; originally announced December 2015.