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arXiv:1612.04223 [pdf, ps, other]
Ultrafast all-optical gated amplifier based on ZnO nanowire lasing
Abstract: We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it propagates diffusively through the forest. We have measured… ▽ More
Submitted 13 December, 2016; originally announced December 2016.
Comments: 3 pages, 3 figures
Journal ref: Appl. Phys. Lett. 101, 021101 (2012)
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arXiv:1610.05658 [pdf, ps, other]
Measurement of light diffusion in ZnO nanowire forests
Abstract: Optimum design of efficient nanowire solar cells requires better understanding of light diffusion in a nanowire array. Here we demonstrate that our recently developed ultrafast all-optical shutter can be used to directly measure the dwell time of light in a nanowire array. Our measurements on disordered ZnO nanowire arrays, "nanowire forests," indicate that the photon mean free path and the dwell… ▽ More
Submitted 18 October, 2016; originally announced October 2016.
Journal ref: Appl. Phys. Lett. 100, 101108 (2012)
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Ultrafast all-optical shutter based on two-photon absorption
Abstract: An ultrafast all-optical shutter is presented, based on a simple two-color two-photon absorption technique. For time-resolved luminescence measurements this shutter is an interesting alternative to the optical Kerr gate. The rejection efficiency is 99%, the switching-off and switching-on speeds are limited by the pulse length only, the rejection time is determined by the crystal slab thickness, an… ▽ More
Submitted 20 April, 2016; originally announced April 2016.
Comments: 3 pages, 3 figures
Journal ref: Optics Letters 36, 2776 (2011)
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Modelling and experiments of self-reflectivity under femtosecond ablation conditions
Abstract: We present a numerical model which describes the propagation of a single femtosecond laser pulse in a medium of which the optical properties dynamically change within the duration of the pulse. We use a Finite Difference Time Domain (FDTD) method to solve the Maxwell's equations coupled to equations describing the changes in the material properties. We use the model to simulate the self-reflectivi… ▽ More
Submitted 20 February, 2014; originally announced February 2014.
Comments: 11 pages, 8 figures
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Observation of Preformed Electron-Hole Cooper Pairs
Abstract: Electrons and holes in a semiconductor form hydrogen-atom-like bound states, called excitons. At high electron-hole densities the attractive Coulomb force becomes screened and excitons can no longer exist. Bardeen-Cooper-Schrieffer theory predicts that at such high densities co-operative many-body effects can at low temperatures induce a bound state, an electron-hole Cooper pair, comparable to an… ▽ More
Submitted 18 November, 2011; originally announced November 2011.
Comments: Main article: 11 pages, 3 figures. Supplement: 10 pages, 4 figures
Journal ref: Physical Review B 85, 195206 (2012)
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arXiv:1012.3600 [pdf, ps, other]
Ultrafast screening and carrier dynamics in ZnO: Theory and experiment
Abstract: At carrier densities above the Mott density Coulomb screening destroys the exciton resonance. This, together with band-gap renormalization and band filling, severely affects the optical spectra. We have experimentally studied these effects by ultrafast pump-probe reflectivity measurements on a ZnO single crystal at various wavelengths around the exciton resonance and in a broad carrier-density ran… ▽ More
Submitted 1 July, 2011; v1 submitted 16 December, 2010; originally announced December 2010.
Comments: 44 pages, 18 figures. To appear in Physical Review B
Journal ref: Phys. Rev. B 84, 035207 (2011)
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arXiv:0707.4156 [pdf, ps, other]
Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon
Abstract: We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silico… ▽ More
Submitted 27 July, 2007; originally announced July 2007.
Comments: 14 pages, 3 figures, final version
Journal ref: Fluctuations and Noise Letters, v. 5, pp. L443-L456 (2005)
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Coherent vibrations of submicron spherical gold shells in a photonic crystal
Abstract: Coherent acoustic radial oscillations of thin spherical gold shells of submicron diameter excited by an ultrashort optical pulse are observed in the form of pronounced modulations of the transient reflectivity on a subnanosecond time scale. Strong acousto-optical coupling in a photonic crystal enhances the modulation of the transient reflectivity up to 4%. The frequency of these oscillations is… ▽ More
Submitted 26 February, 2007; v1 submitted 31 July, 2006; originally announced July 2006.
Comments: Error in Eqs.2 and 3 corrected; Tabl. I corrected; Fig.1 revised; a model that explains the dependence of the oscillation amplitude of the transient reflectivity with wavelength added
Journal ref: Physical Review B 75, 161102(R) (2007)
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New experimental evidence for the role of long-range potential fluctuations in the mechanism of 1/f noise in a-Si:H
Abstract: We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were hydrogenated; in the other one only the n-layers were hydrogenated, while the intrinsic layer was deuterated. The third film had p-i-p structure with all three… ▽ More
Submitted 20 October, 2003; originally announced October 2003.
Comments: 7 pages, 3 figures, to appear in J. Non-Cryst. Solids
Journal ref: J. Non-Cryst. Solids, v.338-340, p.310 (2004)
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Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon
Abstract: We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of… ▽ More
Submitted 20 October, 2003; v1 submitted 30 October, 2002; originally announced October 2002.
Comments: 8 pages, 3 figures, several new parts and one new figure are added, but no conceptual revisions
Journal ref: Phys. Rev. B, Vol. 68, p. 125207 (2003)