Showing 1–17 of 17 results for author: Diez, L H

Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Authors: Beatrice Bednarz, Maria-Andromachi Syskaki, Rohit Pachat, Leon Prädel, Martin Wortmann, Timo Kuschel, Shimpei Ono, Mathias Kläui, Liza Herrera Diez, Gerhard Jakob

Abstract: Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-… ▽ More Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias. △ Less

Submitted 7 June, 2024; v1 submitted 12 April, 2024; originally announced April 2024.

Comments: main manuscript and supplementary material

Journal ref: Appl. Phys. Lett. 124, 232403 (2024)

Control of the magnetic anisotropy in multi-repeat Pt/Co/Al heterostructures using magneto-ionic gating

Authors: Tristan da Câmara Santa Clara Gomes, Tanvi Bhatnagar-Schöffmann, Sachin Krishnia, Yanis Sassi, Dedalo Sanz-Hernández, Nicolas Reyren, Marie-Blandine Martin, Frederic Brunnett, Sophie Collin, Florian Godel, Shimpei Ono, Damien Querlioz, Dafiné Ravelosona, Vincent Cros, Julie Grollier, Pierre Seneor, Liza Herrera Diez

Abstract: Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate… ▽ More Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate that the perpendicular magnetic anisotropy can be reversibly quenched through gate-driven oxidation of the intermediary Al layer between Co and AlO$_\text{x}$, enabling dynamic control of the magnetic layers contributing to the out-of-plane remanence - varying between $n$ and $n +1$. For multilayer configurations with $n = 2$ and $n = 4$, we observe reversible and non-volatile additions of 1/3 and 1/5, respectively, to the anomalous Hall effect amplitude based on the applied gate voltage. Magnetic imaging reveals that the gate-induced spin-reorientation transition occurs through the propagation of a single 90$^{\circ}$ magnetic domain wall separating the perpendicular and in-plane anisotropy states. In the 5-repetition multilayer, the modification leads to a doubling of the period of the magnetic domains at remanence. These results demonstrate that the magneto-ionic control of the anisotropy of a single magnetic layer can be used to control the magnetic properties of coupled multilayer systems, extending beyond the gating effects on a single magnetic layer. △ Less

Submitted 2 October, 2023; originally announced October 2023.

Comments: 9 pages + 3 pages of supplementary materials, 5 main figures + 6 supplementary figures

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

Authors: Maria-Andromachi Syskaki, Takaaki Dohi, Sergei Olegovich Filnov, Sergey Alexeyevich Kasatikov, Beatrice Bednarz, Alevtina Smekhova, Florian Kronast, Mona Bhukta, Rohit Pachat, Johannes Wilhelmus van der Jagt, Shimpei Ono, Dafiné Ravelosona Ramasitera, Jürgen Langer, Mathias Kläui, Liza Herrera Diez, Gerhard Jakob

Abstract: The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying… ▽ More The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion

Authors: Johannes Wilhelmus van der Jagt, Vincent Jeudy, André Thiaville, Mamour Sall, Nicolas Vernier, Liza Herrera Diez, Mohamed Belmeguenai, Yves Roussigné, Salim M. Chérif, Mouad Fattouhi, Luis Lopez-Diaz, Alessio Lamperti, Roméo Juge, Dafiné Ravelosona

Abstract: Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process… ▽ More Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 22 pages, 12 figures. Currently under review

Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers

Authors: Adriano Di Pietro, Rohit Pachat, Liza Herrera Diez, Johannes W. van der Jagt, Dafiné Ravelosona, Gianfranco Durin

Abstract: The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism… ▽ More The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$. △ Less

Submitted 25 April, 2022; originally announced April 2022.

Comments: 8 pages, 5 figures

Key points in the determination of the interfacial Dzyaloshinskii-Moriya interaction from asymmetric bubble domain expansion

Authors: A. Magni, G. Carlotti, A. Casiraghi, E. Darwin, G. Durin, L. Herrera Diez, B. J. Hickey, A. Huxtable, C. Y. Hwang, G. Jakob, C. Kim, M. Kläui, J. Langer, C. H. Marrows, H. T. Nembach, D. Ravelosona, G. A. Riley, J. M. Shaw, V. Sokalski, S. Tacchi, M. Kuepferling

Abstract: Different models have been used to evaluate the interfacial Dzyaloshinskii-Moriya interaction (DMI) from the asymmetric bubble expansion method using magneto-optics. Here we investigate the most promising candidates over a range of different magnetic multilayers with perpendicular anisotropy. Models based on the standard creep hypothesis are not able to reproduce the domain wall (DW) velocity prof… ▽ More Different models have been used to evaluate the interfacial Dzyaloshinskii-Moriya interaction (DMI) from the asymmetric bubble expansion method using magneto-optics. Here we investigate the most promising candidates over a range of different magnetic multilayers with perpendicular anisotropy. Models based on the standard creep hypothesis are not able to reproduce the domain wall (DW) velocity profile when the DW roughness is high. Our results demonstrate that the DW roughness and the interface roughness of the sample layers are correlated. Furthermore, we give guidance on how to obtain reliable results for the DMI value with this popular method. A comparison of the results with Brillouin light scattering (BLS) measurements on the same samples shows that the BLS approach often results in higher measured values of DMI. △ Less

Submitted 13 January, 2022; originally announced January 2022.

Ion irradiation and implantation modifications of magneto-ionically induced exchange bias in Gd/NiCoO

Authors: Christopher J. Jensen, Alberto Quintana, Mamour Sall, Liza Herrera Diez, Junwei Zhang, Xixiang Zhang, Dafiné Ravelosona, Kai Liu

Abstract: Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the… ▽ More Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the Ni$_{0.33}$Co$_{0.67}$O lattice due to strain relaxation. At low He+ fluence ($\leq$ 2$\times$10$^{14}$ ions cm$^{-2}$), the redox-induced interfacial magnetic moment initially increases, owing to enhanced oxygen migration. At higher fluence, the exchange bias is suppressed due to reduction of pinned uncompensated interfacial Ni$_{0.33}$Co$_{0.67}$O spins. For oxygen implanted samples, an initial lattice expansion below a dose of 5$\times$10$^{15}$ cm$^{-2}$ is subsequently dominated at higher dose by a lattice contraction and phase segregation into NiO and CoO-rich phases, which in turn alters the exchange bias. These results highlight the possibility of ion irradiation and implantation as an effective means to tailor magneto-ionic effects. △ Less

Submitted 23 August, 2021; originally announced August 2021.

Comments: 20 pages, 4 figures

Journal ref: Journal of Magnetism and Magnetic Materials, 540, 168479 (2021)

Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$

Authors: R. Pachat, D. Ourdani, J. W. van der Jagt, M. -A. Syskaki, A. Di Pietro, Y. Roussigné, S. Ono, M. S. Gabor, M. Chérif, G. Durin, J. Langer, M. Belmeguenai, D. Ravelosona, L. Herrera Diez

Abstract: In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full rev… ▽ More In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective dam** parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. Applied 15, 064055 (2021)

Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation

Authors: A. Sud, S. Tacchi, D. Sagkovits, C. Barton, M. Sall, L. H. Diez, E. Stylianidis, N. Smith, L. Wright, S. Zhang, X. Zhang, D. Ravelosona, G. Carlotti, H. Kurebayashi, O. Kazakova, M. Cubukcu

Abstract: We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the… ▽ More We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He$^{+}$ irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He$^{+}$ irradiation. This external degree of freedom offers promising perspectives to further improve the control of magnetic skyrmions in multilayers, that could push them towards integration in future technologies. △ Less

Submitted 18 September, 2021; v1 submitted 9 May, 2021; originally announced May 2021.

Comments: 10 pages, 6 figures

Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

Authors: Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Liza Herrera Diez, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz

Abstract: The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal… ▽ More The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have for example proposed in-memory architectures to implement low power binarized neural networks. These simple neural networks, where synaptic weights and neuronal activations assume binary values, can indeed approach state-of-the-art performance on vision tasks. In this work, we revisit one of these architectures where synapses are implemented in a differential fashion to reduce bit errors, and synaptic weights are read using precharge sense amplifiers. Based on experimental measurements on a hybrid 130 nm CMOS/RRAM chip and on circuit simulation, we show that the same memory array architecture can be used to implement ternary weights instead of binary weights, and that this technique is particularly appropriate if the sense amplifier is operated in near-threshold regime. We also show based on neural network simulation on the CIFAR-10 image recognition task that going from binary to ternary neural networks significantly increases neural network performance. These results highlight that AI circuits function may sometimes be revisited when operated in low power regimes. △ Less

Submitted 5 May, 2020; originally announced May 2020.

Bloch-to-Néel domain wall transition evinced through morphology of magnetic bubble expansion in Ta/CoFeB/MgO layers

Authors: Arianna Casiraghi, Alessandro Magni, Liza Herrera Diez, Juergen Langer, Berthold Ocker, Massimo Pasquale, Dafiné Ravelosona, Gianfranco Durin

Abstract: Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-Néel domain walls (DWs). Here we investigate the creep evolution of the overall magnetic bubble morphology in these systems under the combined presence of in-plane and out-of-plane ma… ▽ More Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are often characterised by vanishing or modest values of interfacial Dzyaloshinskii-Moriya interaction (DMI), which results in purely Bloch or mixed Bloch-Néel domain walls (DWs). Here we investigate the creep evolution of the overall magnetic bubble morphology in these systems under the combined presence of in-plane and out-of-plane magnetic fields and we show that He$^+$ ion irradiation induces a transition of the internal DW structure towards a fully Néel spin texture. This transition can be correlated to a simultaneous increase in DMI strength and reduction in saturation magnetisation -- which are a direct consequence of the effects of ion irradiation on the bottom and top CoFeB interfaces, respectively. The threshold irradiation dose above which DWs acquire a pure Néel character is experimentally found to be between 12 $\times$ 10$^{18}$ He$^+$/m$^2$ and 16 $\times$ 10$^{18}$ He$^+$/m$^2$, matching estimations from the one dimensional DW model based on material parameters. Our results indicate that evaluating the global bubble shape during its expansion can be an effective tool to sense the internal bubble DW structure. Furthermore, we show that ion irradiation can be used to achieve post-growth engineering of a desired DW spin texture. △ Less

Submitted 8 July, 2019; originally announced July 2019.

Tuning spin torque nano-oscillator nonlinearity using He+ irradiation

Authors: Sheng Jiang, Roman Khymyn, Sunjae Chung, Quang Tuan Le, Liza Herrera Diez, Afshin Houshang, Mohammad Zahedinejad, Dafine Ravelosona, Johan Åkerman

Abstract: We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As th… ▽ More We use He$^+$ irradiation to tune the nonlinearity, $\mathcal{N}$, of all-perpendicular spin-torque nano-oscillators (STNOs) using the He$^+$ fluence-dependent perpendicular magnetic anisotropy (PMA) of the [Co/Ni] free layer. Employing fluences from 6 to 20$\times10^{14}$~He$^{+}$/cm$^{2}$, we are able to tune $\mathcal{N}$ in an in-plane field from strongly positive to moderately negative. As the STNO microwave signal properties are mainly governed by $\mathcal{N}$, we can in this way directly control the threshold current, the current tunability of the frequency, and the STNO linewidth. In particular, we can dramatically improve the latter by more than two orders of magnitude. Our results are in good agreement with the theory for nonlinear auto-oscillators, confirm theoretical predictions of the role of nonlinearity, and demonstrate a straightforward path towards improving the microwave properties of STNOs. △ Less

Submitted 20 December, 2018; originally announced December 2018.

Comments: 5 pages, 4 figures

Tuning the magnetodynamic properties of all-perpendicular spin valves using He+ irradiation

Authors: S. Jiang, S. Chung, L. Herrera Diez, T. Q. Le, F. Magnusson, D. Ravelosona, J. Åkerman

Abstract: Using He+ ion irradiation, we demonstrate how the magnetodynamic properties of both ferromagnetic layers in all-perpendicular [Co/Pd]/Cu/[Co/Ni] spin valves can be tuned by varying the He+ ion fluence. As the perpendicular magnetic anisotropy of both layers is gradually reduced by the irradiation, different magnetic configurations can be achieved from all-perpendicular, through orthogonal, to all… ▽ More Using He+ ion irradiation, we demonstrate how the magnetodynamic properties of both ferromagnetic layers in all-perpendicular [Co/Pd]/Cu/[Co/Ni] spin valves can be tuned by varying the He+ ion fluence. As the perpendicular magnetic anisotropy of both layers is gradually reduced by the irradiation, different magnetic configurations can be achieved from all-perpendicular, through orthogonal, to all in-plane. In addition, both the magnetic dam** and the inhomogeneous broadening of the Co/Ni layer improve substantially with increasing fluence. GMR of the spin valve is negatively affected and decreases linearly from an original value of 1.14% to 0.4% at the maximum fluence of 50*10^14 He+/cm^2. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Comments: 5 Pages, 4 Figures

The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometry

Authors: J. -P. Tetienne, T. Hingant, L. J. Martinez, S. Rohart, A. Thiaville, L. Herrera Diez, K. Garcia, J. -P. Adam, J. -V. Kim, J. -F. Roch, I. M. Miron, G. Gaudin, L. Vila, B. Ocker, D. Ravelosona, V. Jacques

Abstract: The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Néel type, and dramatically affects the efficiency of the different proposed mechanisms.… ▽ More The recent observation of current-induced domain wall (DW) motion with large velocity in ultrathin magnetic wires has opened new opportunities for spintronic devices. However, there is still no consensus on the underlying mechanisms of DW motion. Key to this debate is the DW structure, which can be of Bloch or Néel type, and dramatically affects the efficiency of the different proposed mechanisms. To date, most experiments aiming to address this question have relied on deducing the DW structure and chirality from its motion under additional in-plane applied fields, which is indirect and involves strong assumptions on its dynamics. Here we introduce a general method enabling direct, in situ, determination of the DW structure in ultrathin ferromagnets. It relies on local measurements of the stray field distribution above the DW using a scanning nanomagnetometer based on the Nitrogen-Vacancy defect in diamond. We first apply the method to a Ta/Co40Fe40B20(1 nm)/MgO magnetic wire and find clear signature of pure Bloch DWs. In contrast, we observe left-handed Néel DWs in a Pt/Co(0.6 nm)/AlOx wire, providing direct evidence for the presence of a sizable Dzyaloshinskii-Moriya interaction (DMI) at the Pt/Co interface. This method offers a new path for exploring interfacial DMI in ultrathin ferromagnets and elucidating the physics of DW motion under current. △ Less

Submitted 6 October, 2014; originally announced October 2014.

Comments: Main text and Supplementary Information, 33 pages and 12 figures

Journal ref: Nature Communications 6, 6733 (2015)

Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As

Authors: L. Herrera Diez, M. Konuma, E. Placidi, F. Arciprete, A. W. Rushforth, R. P. Campion, B. L. Gallagher, J. Honolka, K. Kern

Abstract: We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with resp… ▽ More We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure. △ Less

Submitted 16 June, 2010; originally announced June 2010.

Comments: 4 pages, 4 figures

Temperature dependent Neel wall dynamics in GaMnAs/GaAs

Authors: J. Honolka, L. Herrera Diez, R. K. Kremer, K. Kern, E. Placidi, F. Arciprete

Abstract: Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a dra… ▽ More Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors. △ Less

Submitted 28 August, 2009; originally announced August 2009.

Comments: Figures 2 and 6 not correctly TeXified

Complex domain wall dynamics in compressively strained GaMnAs epilayers

Authors: L. Herrera Diez, R. K. Kremer, A. Enders, M. Rössle, E. Arac, J. Honolka, K. Kern, E. Placidi, F. Arciprete

Abstract: The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta) domain walls with considerably different dynamic behavior are observed. While the (90+Delta) reversal is identified to be propagation dominated with a small n… ▽ More The domain wall induced reversal dynamics in compressively strained GaMnAs was studied employing the magneto-optical Kerr effect and Kerr microscopy. Due to the influence of an uniaxial part in the in-plane magnetic anisotropy (90+/-Delta) domain walls with considerably different dynamic behavior are observed. While the (90+Delta) reversal is identified to be propagation dominated with a small number of domain walls, the case of (90-Delta) reversal includes the nucleation of many domain walls. The domain wall nucleation/propagation energy for both transitions are estimated using model calculations from which we conclude that single domain devices can be achievable using the (90+Delta) mode. △ Less

Submitted 30 October, 2008; v1 submitted 16 May, 2008; originally announced May 2008.

Comments: 4 figures

Journal ref: Phys. Rev. B 78, 155310 (2008)