Showing 101–143 of 143 results for author: Dietl, T

An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System

Authors: J. Jaroszynski, T. Andrearczyk, G. Karczewski, J. Wróbel, T. Wojtowicz, Dragana Popovic, T. Dietl

Abstract: A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wells reveals an apparent metal-insulator transition as well as an anomalous intermediate phase just on its metallic side. This phase is characterized by colossal magnetoresistance-like phenomena, which are assigned to the phase separation of the electron fluid and the associated emergence of ferromagnetic bubbles. A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wells reveals an apparent metal-insulator transition as well as an anomalous intermediate phase just on its metallic side. This phase is characterized by colossal magnetoresistance-like phenomena, which are assigned to the phase separation of the electron fluid and the associated emergence of ferromagnetic bubbles. △ Less

Submitted 15 June, 2006; v1 submitted 8 September, 2005; originally announced September 2005.

Comments: 5 pages, 4 figures, title changed, text rewritten

Journal ref: Phys. Rev. B 76, 045322 (2007)

Reorientation Transition in Single-Domain (Ga,Mn)As

Authors: K-Y. Wang, M. Sawicki, K. W. Edmonds, R. P. Campion, S. Maat, C. T. Foxon, B. L. Gallagher, T. Dietl

Abstract: We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole tempe… ▽ More We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching. △ Less

Submitted 7 July, 2005; originally announced July 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev Lett. 95, 217204 (2005)

Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wells

Authors: G. Grabecki, J. Wrobel, T. Dietl, E. Janik, M. Aleszkiewicz, E. Papis, E. Kaminska, A. Piotrowska, G. Springholz, G. Bauer

Abstract: Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostr… ▽ More Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostructures. However, in contrast to any other system studied so far, we observe precise conductance quantization in $2e^2/h$ units, {\it despite of significant amount of charged defects in the vicinity of the constriction}. We show that such extraordinary results is a consequence of the paraelectric properties of PbTe, namely, the suppression of long-range tails of the Coulomb potentials due to the huge dielectric constant. △ Less

Submitted 29 June, 2005; originally announced June 2005.

Comments: 7 pages, 6 figures, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 72, 125332 (2005)

The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors

Authors: C. Sliwa, T. Dietl

Abstract: The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x} {Mn}_x {N}$, ${Ga}_{1-x} {Mn}_x {As}$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{app… ▽ More The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (${Ga}_{1-x} {Mn}_x {N}$, ${Ga}_{1-x} {Mn}_x {As}$). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the \emph{apparent} value of the s-d exchange coupling $N_0 α$ is reduced. It is shown that the magnitude of this effect increases when x diminishes. Our model may explain an unusual behavior of electron spin splitting observed recently in those two materials in the Mn concentration range x <= 0.2%. △ Less

Submitted 5 May, 2005; originally announced May 2005.

Comments: 4 pages

Journal ref: included in Physical Review B 78, 165205 (2008) as Section VI

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

Authors: P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl

Abstract: The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Butt… ▽ More The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization. △ Less

Submitted 25 February, 2005; originally announced February 2005.

Comments: Submitted to Phys. Rev. B Rapid Communications

Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films

Authors: T. Andrearczyk, J. Jaroszynski, G. Grabecki, T. Dietl, T. Fukumura, M. Kawasaki

Abstract: Effects of spin-orbit coupling and s-d exchange interaction are probed by magnetoresistance measurements carried out down to 50 mK on ZnO and Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative description of the data for ZnO:Al in terms of weak-localization theory makes it possible to determine… ▽ More Effects of spin-orbit coupling and s-d exchange interaction are probed by magnetoresistance measurements carried out down to 50 mK on ZnO and Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative description of the data for ZnO:Al in terms of weak-localization theory makes it possible to determine the coupling constant λ_{so} = (4.4 +- 0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} = λ_{so}*c(s x k). A complex and large magnetoresistance of Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d spin-splitting and magnetic polaron formation on the disorder-modified electron-electron interactions. It is suggested that the proposed model explains the origin of magnetoresistance observed recently in many magnetic oxide systems. △ Less

Submitted 24 February, 2005; originally announced February 2005.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 72, 121309(R) (2005)

Transport and Magnetism in p-type cubic (Ga,Mn)N

Authors: KW Edmonds, SV Novikov, M Sawicki, RP Campion, C. R. Staddon, AD Giddings, LX Zhao, KY Wang, T Dietl, CT Foxon, BL Gallagher

Abstract: The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is observed down to around 150K, characterised by an acceptor ionisation energy of around 45-60meV. The dependence of hole concentration and ionisation energy on Mn… ▽ More The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is observed down to around 150K, characterised by an acceptor ionisation energy of around 45-60meV. The dependence of hole concentration and ionisation energy on Mn concentration indicates that the shallow acceptor level is not simply due to unintentional co-do**. Thermopower measurements on freestanding films, CV profilometry, and the dependence of conductivity on thickness and growth temperature, all show that the conduction is not due to diffusion into the substrate. We therefore associate the p-type conductivity with the presence of the Mn in the cubic GaN films. Magnetometry measurements indicate a small room temperature ferromagnetic phase, and a significantly larger magnetic coupling at low temperatures. △ Less

Submitted 18 November, 2004; originally announced November 2004.

Comments: 14 pages

Journal ref: Part of this manuscript was published in Applied Physics Letters, vol. 86, p. 152114 (2005)

Magnetism in (Ga,Mn)As Thin Films With TC Up To 173K

Authors: K. Y. Wang, R. P. Campion, K. W. Edmonds, M. Sawicki, T. Dietl, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the magnetic properties of (Ga,Mn)As thin films with Mn concentration between 1 and 9%. Ferromagnetic transition temperatures TC of up to 173K are observed. The results are compared to the predictions of the Zener mean-field theory. We find no evidence of a fundamental limit to TC. We have investigated the magnetic properties of (Ga,Mn)As thin films with Mn concentration between 1 and 9%. Ferromagnetic transition temperatures TC of up to 173K are observed. The results are compared to the predictions of the Zener mean-field theory. We find no evidence of a fundamental limit to TC. △ Less

Submitted 18 November, 2004; originally announced November 2004.

Comments: presented at ICPS-27; 2 pages

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Authors: M. Sawicki, T. Dietl, C. T. Foxon, S. V. Novikov, R. P. Campion, K. W. Edmonds, K. Y. Wang, A. D. Giddings, B. L. Gallagher

Abstract: Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N. Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N. △ Less

Submitted 21 October, 2004; originally announced October 2004.

Comments: 2 pages, 1 figure, proc. ICPS 27, Flagstaff '04

Journal ref: Proc. 27th Int. Conf. on Phys. of Semicon., Flagstaff, Az, July 2004, eds. J. Menendez and Ch. Van de Walle, (New York 2005) p. 1371.

Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers

Authors: M. Sawicki, F. Matsukura, A. Idziaszek, T. Dietl, G. M. Schott, C. Ruester, C. Gould, G. Karczewski, G. Schmidt, L. W. Molenkamp

Abstract: It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature an… ▽ More It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed. △ Less

Submitted 21 October, 2004; originally announced October 2004.

Comments: 7 pages, 5 Postscript figures, uses revtex4

Journal ref: Phys. Rev. B 70, 245325 (2004)

In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

Authors: M. Sawicki, K-Y. Wang, K. W. Edmonds, R. P. Campion, C. R. Staddon, N. R. S. Farley, C. T. Foxon, E. Papis, E. Kaminska, A. Piotrowska, T. Dietl, B. L. Gallagher

Abstract: We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it can be rotated from the [-110] direction to the [110] direction by low temperature annealing. We show that this behavior is hole-density-dependent and does not originate from surface anisotropy. The presence of uniaxia… ▽ More We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it can be rotated from the [-110] direction to the [110] direction by low temperature annealing. We show that this behavior is hole-density-dependent and does not originate from surface anisotropy. The presence of uniaxial anisotropy as well its dependence on the hole-concentration and temperature can be explained in terms of the p-d Zener model of the ferromagnetism assuming a small trigonal distortion. △ Less

Submitted 21 October, 2004; originally announced October 2004.

Comments: 4 pages, 6 Postscript figures, uses revtex4

Journal ref: Phys. Rev. B 71, 121302(R) (2005)

Spintronics and ferromagnetism in wide-band-gap semiconductors

Authors: Tomasz Dietl

Abstract: Recent progress in understanding and controlling spintronic properties of (Ga,Mn)As and related compounds is contrasted to diverging experimental and theoretical results concerning the origin of high temperature ferromagnetism discovered in an ample class of magnetically doped wide-band-gap semiconductors. Recent progress in understanding and controlling spintronic properties of (Ga,Mn)As and related compounds is contrasted to diverging experimental and theoretical results concerning the origin of high temperature ferromagnetism discovered in an ample class of magnetically doped wide-band-gap semiconductors. △ Less

Submitted 26 August, 2004; originally announced August 2004.

Comments: 6 pages, 5 figures 85 references; Proceedings of 27th International Conference on Physics of Semiconductors, Flagstaff, Arizona, USA, July 2004, ed. J. Mendez (AIP Proceedings)

Journal ref: Proc. 27th International Conference on Physics of Semiconductors Flagstaff, USA, 2004 eds. J. Menendez and C. G Van de Walle (AIP, Melville, 2005), p. 56

Monte Carlo simulations of ferromagnetism in p-CdMnTe quantum wells

Authors: D. Kechrakos, N. Papanikolaou, K. N. Trohidou, T. Dietl

Abstract: Monte Carlo simulations, in which the Schrodinger equation is solved at each Monte Carlo sweep, are employed to assess the influence of magnetization fluctuations,short-range antiferromagnetic interactions, disorder, magnetic polaron formation, and spin-Peierls instability on the carrier-mediated Ising ferromagnetism in two-dimensional electronic systems. The determined critical temperature and… ▽ More Monte Carlo simulations, in which the Schrodinger equation is solved at each Monte Carlo sweep, are employed to assess the influence of magnetization fluctuations,short-range antiferromagnetic interactions, disorder, magnetic polaron formation, and spin-Peierls instability on the carrier-mediated Ising ferromagnetism in two-dimensional electronic systems. The determined critical temperature and hysteresis are affected in a nontrivial way by the antiferromagnetic interactions. The findings explain striking experimental results for modulation-doped p-CdMnTe quantum wells. △ Less

Submitted 23 February, 2005; v1 submitted 14 July, 2004; originally announced July 2004.

Comments: 4 pages, 4 figures, to be published in Physical Review Letters; replaced figure 4; revised text

Journal ref: Phys.Rev.Lett. 94(12) 127201 (2005)

High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions

Authors: M. Zenger, J. Moser, W. Wegscheider, D. Weiss, T. Dietl

Abstract: We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic i… ▽ More We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling barrier. △ Less

Submitted 15 April, 2004; originally announced April 2004.

Comments: 12 pages, 4 figures, submitted to Appl. Phys. Lett

Spin filtering in a hybrid ferromagnetic-semiconductor microstructure

Authors: J. Wróbel, T. Dietl, A. Lusakowski, G. Grabecki, K. Fronc, R. Hey, K. H. Ploog, H. Shtrikman

Abstract: We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low e… ▽ More We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low electron densities. △ Less

Submitted 13 April, 2004; originally announced April 2004.

Journal ref: Phys. Rev. Lett. Vol.93, 246601 (2004)

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

Authors: E. M. Hankiewicz, T. Jungwirth, T. Dietl, C. Timm, Jairo Sinova

Abstract: We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation… ▽ More We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density. △ Less

Submitted 1 March, 2004; v1 submitted 26 February, 2004; originally announced February 2004.

Comments: 10 pages, 7 figures, some typos corrected

Journal ref: Phys. Rev. B 70, 241301 (2005).

Unidirectional Transmission of Electrons in a Magnetic Field Gradient

Authors: G. Grabecki, J. Wrobel, K. Fronc, M. Aleszkiewicz, M. Guziewicz, E. Papis, E. Kaminska, A. Piotrowska, H. Shtrikman, T. Dietl

Abstract: The work presents an experimental demonstration of time-reversal asymmetry of electron states propagating along boundary separating areas with opposite magnetic fields. For this purpose we have fabricated a hybrid ferromagnet-semiconductor device in form of a Hall cross with two ferromagnets deposited on top. The magnets generated two narrow magnetic barriers of opposite polarity in the active H… ▽ More The work presents an experimental demonstration of time-reversal asymmetry of electron states propagating along boundary separating areas with opposite magnetic fields. For this purpose we have fabricated a hybrid ferromagnet-semiconductor device in form of a Hall cross with two ferromagnets deposited on top. The magnets generated two narrow magnetic barriers of opposite polarity in the active Hall area. We have observed that if the signs of the barriers are reversed, the bend resistance changes its sign. Using the Landauer-Buttiker theory, we have demonstrated that this is a direct consequence of asymmetric transmission of the "snake" and the "cycloidal" trajectories formed the boundary separating the regions with opposite magnetic field directions. △ Less

Submitted 10 November, 2003; originally announced November 2003.

Comments: 8 pages, 5 figures, presented at 11th Int. Conf. on Modulated Semiconductor Structures Nara, July 2003. To be published in Physica E

Journal ref: Physica E 21, 451 (2004).

Spin order manipulations in nanostructures of II-VI ferromagnetic semiconductors

Authors: Tomasz Dietl

Abstract: An overview of recent studies on ferromagnetism in Cr- and Mn-based II-VI diluted magnetic semiconductors is presented emphasizing differences in underlying exchange mechanisms. Examples of manipulations with spin ordering by carrier density, dimensionality, light, and electric field are given. An overview of recent studies on ferromagnetism in Cr- and Mn-based II-VI diluted magnetic semiconductors is presented emphasizing differences in underlying exchange mechanisms. Examples of manipulations with spin ordering by carrier density, dimensionality, light, and electric field are given. △ Less

Submitted 23 July, 2003; originally announced July 2003.

Comments: 6 pages, 7 figures, Proceedings International Conference on Magnetism, Rome 2003, J. Magn. Magn. Mater., in press

Journal ref: J. Magn. Magn. Materials 272-276 (2004) 1969.

Mn Interstitial Diffusion in (Ga,Mn)As

Authors: K. W. Edmonds, P. Boguslawski, K. Y. Wang, R. P. Campion, N. R. S. Farley, B. L. Gallagher, C. T. Foxon, M. Sawicki, T. Dietl, M. B. Nardelli, J. Bernholc

Abstract: We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the… ▽ More We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, and resistivity measurements during annealing, show that the observed changes are due to out-diffusion of Mn interstitials towards the surface, governed by an energy barrier of about 0.7-0.8 eV. The Mn interstitial is a double donor resulting in compensation of charge carriers and suppression of ferromagnetism. Electric fields induced by high concentrations of substitutional Mn acceptors have a significant effect on the diffusion. △ Less

Submitted 7 July, 2003; originally announced July 2003.

Comments: 5 pages, 4 figures, submitted to Physical Review Letters

Journal ref: Physical Review Letters 92, 037201 (2004)

Hall effect and magnetoresistance in p-type ferromagnetic semiconductors

Authors: Tomasz Dietl, Fumihiro Matsukura, Hideo Ohno, Joel Cibert, David Ferrand

Abstract: Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-scattering mechanisms assessed for (Ga,Mn)As and (Zn,Mn)Te. It is emphasized that magnetotransport studies of ferromagnetic semiconductors in h… ▽ More Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of side-jump and skew-scattering mechanisms assessed for (Ga,Mn)As and (Zn,Mn)Te. It is emphasized that magnetotransport studies of ferromagnetic semiconductors in high magnetic fields make it possible to separate the contributions of the ordinary and anomalous Hall effects, to evaluate the role of the spins in carrier scattering and localization as well as to determine the participation ratio of the ferromagnetic phase near the metal-insulator transition. A sizable negative magnetoresistance in the regime of strong magnetic fields is assigned to the weak localization effect. △ Less

Submitted 20 June, 2003; v1 submitted 18 June, 2003; originally announced June 2003.

Comments: 7 pages, 6 figures; NATO Advanced Research Workshop "Recent Trends on Physical Phenomena in High Magnetic Fields", Les Houches, February 2002, in press

Journal ref: Proc. NATO Workshop "Recent Trends in Theory of Physical Phenomena in High Magnetic Fields" eds. I. Vagner et al. (Kluwer, Dordrecht, 2003) p. 197.

Nitrides as spintronic materials

Authors: Tomasz Dietl

Abstract: A report of progress in spintronics-related works involving group III nitrides is given emphasizing contradictory opinions concerning basics characteristics of these materials. The actual position of magnetic impurities in the GaN lattice as well as a possible role of magnetic precipitates is discussed. The question whether the hole introduce by the Mn impurities is localized tightly on the Mn d… ▽ More A report of progress in spintronics-related works involving group III nitrides is given emphasizing contradictory opinions concerning basics characteristics of these materials. The actual position of magnetic impurities in the GaN lattice as well as a possible role of magnetic precipitates is discussed. The question whether the hole introduce by the Mn impurities is localized tightly on the Mn d-levels or rather on the hybridized p-d bonding states is addressed. The nature of spin-spin interactions and magnetic phases, as provided by theoretical and experimental findings, is outlined, and possible origins of the high temperature ferromagnetism observed in (Ga,Mn)N are presented. Experimental studies aiming at evaluating characteristic times of spin coherence and dephasing in GaN are described. △ Less

Submitted 18 June, 2003; originally announced June 2003.

Comments: 6 pages, 9 figures, 5th International Conference on Nitride Semiconductors, Nara, May 2003, phys. stat. solidi

Journal ref: phys. stat. solidi (b) 240 (2003) 433

III-V and II-VI Mn-based Ferromagnetic Semiconductors

Authors: Tomasz Dietl

Abstract: A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the Curie temperatures T_C above 1 K have been observed for the uniformly and modulation-doped p-type… ▽ More A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the Curie temperatures T_C above 1 K have been observed for the uniformly and modulation-doped p-type structures but not in the case of n-type films. The experiments demonstrating the tunability of T_C by light and electric field are presented. The tailoring of domain structures and magnetic anisotropy by strain engineering and confinement is discussed emphasizing the role of the spin-orbit coupling in the valence band. The question of designing modulated magnetic structures in low dimensional semiconductor systems is addressed. Recent progress in search for semiconductors with T_C above room temperature is presented. △ Less

Submitted 18 June, 2003; originally announced June 2003.

Comments: 8 pages, 9 figures, Spring Meeting of the German Physical Society, March 2003, Advances in Solid State Physics

Journal ref: Advances in Solid State Physics, ed. B. Kramer (Springer, Berlin, 2003) p. 413-426.

Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering

Authors: H. Kepa, Le Van Khoi, C. M. Brown, M. Sawicki, J. K. Furdyna, T. M. Giebultowicz, T. Dietl

Abstract: The effect of hole do** on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn$_{1-x}$Mn$_x$Te is probed by inelastic neutron scattering. The difference in the NN exchange energy $ΔJ_1$ in the presence and in the absence of the holes is determined. The obtained value of $ΔJ_1$ is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the met… ▽ More The effect of hole do** on the exchange coupling of the nearest neighbor (NN) Mn pairs in Zn$_{1-x}$Mn$_x$Te is probed by inelastic neutron scattering. The difference in the NN exchange energy $ΔJ_1$ in the presence and in the absence of the holes is determined. The obtained value of $ΔJ_1$ is in good agreement with the predictions of the Zener/RKKY model, even on the insulator side of the metal-insulator transition. △ Less

Submitted 7 June, 2003; originally announced June 2003.

Comments: 4 pages, 2 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 91 (2003) 087205

Effect of bulk inversion asymmetry on the Datta-Das transistor

Authors: A. Łusakowski, J. Wróbel, T. Dietl

Abstract: A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for… ▽ More A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices. △ Less

Submitted 14 April, 2003; originally announced April 2003.

Comments: 4 pages, Revtex4, 4 EPS figures

Journal ref: Phys. Rev. B68, 081201(R) (2003)

Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers

Authors: M. Sawicki, F. Matsukura, A. Idziaszek, T. Dietl, G. M. Schott, C. Ruester, G. Karczewski, G. Schmidt, L. W. Molenkamp

Abstract: It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration, and temperature. This behavior reflects the spin anisotropy of the valence subbands and corroborates predictions of the mean field Zener model of the carrier m… ▽ More It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration, and temperature. This behavior reflects the spin anisotropy of the valence subbands and corroborates predictions of the mean field Zener model of the carrier mediated ferromagnetism in III-V diluted magnetic semiconductors with Mn. At the same time the existence of in-plane uniaxial anisotropy with [110] the easy axis is evidenced. This is related to the top/bottom symmetry breaking, resulting in the lowering of point symmetry of (Ga,Mn)As to the C_{2v} symmetry group. The latter mechanism coexists with the hole-induced cubic anisotropy, but takes over close to T_C. △ Less

Submitted 23 December, 2002; v1 submitted 20 December, 2002; originally announced December 2002.

Comments: 4 pages, Latex, 4 eps figures. Extended and upgraded version appeared in cond-mat/0410549

Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells

Authors: J. Jaroszynski, T. Andrearczyk, G. Karczewski, J. Wrobel, T. Wojtowicz, E. Papis, E. Kaminska, A. Piotrowska, Dragana Popovic, T. Dietl

Abstract: We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature $T_C$ as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles, and electron densities, are discussed… ▽ More We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature $T_C$ as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles, and electron densities, are discussed taking into account both Coulomb electron-electron interactions and s$-$d coupling to Mn spin fluctuations. The critical behavior of the resistance ``spikes'' at $T \to T_C$ corroborates theoretical suggestions that the ferromagnet is destroyed by domain excitations. △ Less

Submitted 12 December, 2002; v1 submitted 14 May, 2002; originally announced May 2002.

Comments: revised, 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 89, 266802, (2002)

Ferromagnetic semiconductors

Authors: Tomasz Dietl

Abstract: The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some details. Results of a quantitative comparison between… ▽ More The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some details. Results of a quantitative comparison between experimental and theoretical results, notably for Mn-based III-V and II-VI compounds, are presented. This comparison demonstrates that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures T_C magnetic anisotropy, domain structure, and magnetic circular dichroism. On this basis, chemical trends are examined and show to lead to the prediction of semiconductor systems with T_C that may exceed room temperature, an expectation that are being confirmed by recent findings. Results for materials containing magnetic ions other than Mn are also presented emphasizing that the double exchange involving ho** through d states may operate in those systems. △ Less

Submitted 16 January, 2002; originally announced January 2002.

Comments: 18 pages, 8 figures; special issue of Semicon. Sci. Technol. on semiconductor spintronics

Journal ref: Semicond. Sci. Technol. 17, 377 (2002)

Why ferromagnetic semiconductors?

Authors: Tomasz Dietl

Abstract: Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular a… ▽ More Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular attention is paid to those concepts which propose to exploit electron or nuclear spins as the information carriers. Here, ferromagnetic semiconductors of III-V or II-VI compounds containing a sizable concentration of transition metals appear as outstanding spintronic materials. △ Less

Submitted 16 January, 2002; originally announced January 2002.

Comments: 8 PDF pages, Polish Physical Soc. Meeting

Journal ref: Acta Phys. Polon. A 100 (2001) 139 (Suppl.)

Kinetic exchange vs. room temperature ferromagnetism in diluted magnetic semiconductors

Authors: J. Blinowski, P. Kacman, T. Dietl

Abstract: Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the do** by shallow impurities may lead to the ferromagnetism driven by the double exchange. We consider the dependence of kinetic exchang… ▽ More Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the do** by shallow impurities may lead to the ferromagnetism driven by the double exchange. We consider the dependence of kinetic exchange on the p-d hybridization, on the electronic configurations of the magnetic ions, and on the energies of the charge transfer between the valence band of host materials and the magnetic ions. In the case of Mn-based II-VI compounds, the do** by acceptors is necessary for the hole-induced ferromagnetism. The latter is, however, possible without any do** for some of Mn-, Fe- or Co-based III-V magnetic semiconductors. In nitrides with Fe or Co carrier-induced ferromagnetism with T_C>300K is expected in the presence of acceptor do**. △ Less

Submitted 2 January, 2002; originally announced January 2002.

Comments: 6 pages, 1 figure

Journal ref: Mat. Res. Soc. Symp. Proc. Vol. 690, F6.9 (eds. T.J. Klemmer, J.Z. Sun, A. Fert, MRS 2002)

Light and electric field control of ferromagnetism in magnetic quantum structures

Authors: H. Boukari, P. Kossacki, M. Bertolini, D. Ferrand, J. Cibert, S. Tatarenko, A. Wasiela, J. A. Gaj, T. Dietl

Abstract: A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic… ▽ More A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid. △ Less

Submitted 21 February, 2002; v1 submitted 27 November, 2001; originally announced November 2001.

Comments: 4 pages and 3 figures

Journal ref: Phys. Rev. Lett. 88, 207204 (2002)

Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

Authors: T. Dietl, F. Matsukura, H. Ohno

Abstract: It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both strong increase of E_b and evolution of Mn spin-resonance spectrum with the magnitude of valence-band offsets. For such a structure of Mn impurity in III-… ▽ More It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both strong increase of E_b and evolution of Mn spin-resonance spectrum with the magnitude of valence-band offsets. For such a structure of Mn impurity in III-V materials, possible models accounting for the recently determined Curie temperature of about 940 K in a compensated Ga(0.91)Mn(0.09)N are discussed. △ Less

Submitted 13 September, 2001; originally announced September 2001.

Comments: 4 RevTex pages, 2 figures

Journal ref: Phys. Rev. B 66, 033203 (2002)

Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures

Authors: T. Andrearczyk, J. Jaroszynski, G. Karczewski, J. Wrobel, T. Wojtowicz, T. Dietl, E. Papis, E. Kami'nska, A. Piotrowska

Abstract: We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and enhanced localization make it possible to detect an additional QHE plateau associated with extended states floating-up in vanishing magnetic field. We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and enhanced localization make it possible to detect an additional QHE plateau associated with extended states floating-up in vanishing magnetic field. △ Less

Submitted 6 September, 2001; originally announced September 2001.

Comments: 4 revtex pages, 2 figures

Journal ref: Physica E 12, 361 (2002).

Magnetic domains in III-V magnetic semiconductors

Authors: T. Dietl, Jürgen König, A. H. MacDonald

Abstract: Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width d = 1.1 um for Ga_0.957Mn_0.043As/In_0.16Ga_0.8… ▽ More Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width d = 1.1 um for Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)]. △ Less

Submitted 5 December, 2001; v1 submitted 30 June, 2001; originally announced July 2001.

Comments: 4 RevTex pages, 2 figures spelling of author's names corrected in abstract page

Journal ref: Phys. Rev. B 64, 241201(R) (2001)

Carrier-induced ferromagnetism in p-Zn1-xMnxTe

Authors: D. Ferrand, J. Cibert, A. Wasiela, C. Bourgognon, S. Tatarenko, G. Fishman, T. Andrearczyk, J. Jaroszynski, S. Kolesnik, T. Dietl, B. Barbara, D. Dufeu

Abstract: We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The… ▽ More We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems. △ Less

Submitted 31 July, 2000; originally announced July 2000.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 63, 085201 (2001)

Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

Authors: T. Dietl, H. Ohno, F. Matsukura

Abstract: A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of strain upon the hole density-of-states, and (iii) the influence of disorder and carrier-carrier interactions, particularly near t… ▽ More A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of strain upon the hole density-of-states, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A quantitative comparison between experimental and theoretical results for (Ga,Mn)As demonstrates that theory describes the values of the Curie temperatures observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of biaxial strain. Furthermore, the model reproduces unusual sign, magnitude, and temperature dependence of magnetic circular dichroism in the spectral region of the fundamental absorption edge. Chemical trends and various suggestions concerning design of novel ferromagnetic semiconductor systems are described. △ Less

Submitted 12 July, 2000; v1 submitted 11 July, 2000; originally announced July 2000.

Comments: 25 pages, 16 figures

Journal ref: Phys. Rev. B 63, 195205 (2001)

Ferromagnetism in III-V and II-VI semiconductor structures

Authors: Tomasz Dietl, Hideo Ohno

Abstract: The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructu… ▽ More The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructures, and more recently, in Zn1-xMnxTe:N epilayers. On the theoretical side, a model is presented, which takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of confinement and strain upon the hole density-of-states and response function, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A comparison between experimental and theoretical results demonstrates that the model can describe the magnetic circular dichroism, the values of TC observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of confinement and biaxial strain. Various suggestions concerning design of novel ferromagnetic semiconductor systems are described. △ Less

Submitted 28 March, 2000; v1 submitted 29 February, 2000; originally announced February 2000.

Comments: Proc. 11th International Winterschool on Low Dimensional Systems: Fundamentals and Applications Mauterndorf, Austria, 2000, Physica E, to be published 9 pages, 4 figures, new version replaces HTML by PS format, and contains some typos corrected

Journal ref: Physica E9, 185 (2001)

Weak localization in the 2D metallic regime of Si-MOS

Authors: G. Brunthaler, A. Prinz, G. Bauer, V. M. Pudalov, E. M. Dizhur, J. Jaroszynski, P. Glod, T. Dietl

Abstract: The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are pr… ▽ More The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are present in the investigated temperature and concentration range thus proving the absence of strong quantum effects due to electron-electron interaction. From saturation effects of the phase coherence time a lower boundary for spin-orbit scattering of about 200 ps is estimated. △ Less

Submitted 2 November, 1999; originally announced November 1999.

Comments: 4 pages, 3 figures, Conf. on "Localization: Disorder and Interaction in Transport Phenomena" July 29 - August 2, 1999, Hamburg, Germany

Journal ref: Ann. Phys. 8, 579 (1999)

Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

Authors: D. Ferrand, J. Cibert, C. Bourgognon, S. Tatarenko, A. Wasiela, G. Fishman, A. Bonanni, H. Sitter, S. Kolesnik, J. Jaroszynski, A. Barcz, T. Dietl

Abstract: p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes c… ▽ More p-type do** of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration. △ Less

Submitted 8 October, 1999; originally announced October 1999.

Comments: 3 figures Ninth International Conference on II-VI Compounds, Kyoto, Japan, november 1999

Journal ref: J. Cryst. Growth 214/215 (2000) 387

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Authors: T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, H. Ohno

Abstract: Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic reg… ▽ More Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV. △ Less

Submitted 28 September, 1999; originally announced September 1999.

Comments: PDF file, 8 pages, 4 figures

Quantum ballistic transport in constrictions of n-PbTe

Authors: G. Grabecki, J. Wrobel, T. Dietl, K. Byczuk, E. Papis, E. Kaminska, A. Piotrowska, G. Springholz, M. Pinczolits, G. Bauer

Abstract: Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In the moderately strong magnetic fields perpendicular to the current, B>1T, the conductance shows accurate quantization in the units of 1e^2/h as a function of th… ▽ More Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In the moderately strong magnetic fields perpendicular to the current, B>1T, the conductance shows accurate quantization in the units of 1e^2/h as a function of the side-gate voltage. In the absence of the field, a temperature-independent step structure, with an average step height approx. 1e^2/h, is observed. It is suggested that such a quantization may reflect the lifting of the Kramers degeneracy by the exchange interaction among the electrons, effective despite a large dielectric constant of bulk PbTe. △ Less

Submitted 12 June, 1999; originally announced June 1999.

Comments: 4 pages, 4 Postscript figures

Journal ref: Phys. Rev. B 60, R5133 (1999).

Realistic Electron-Electron Interaction in a Quantum Wire

Authors: K. Byczuk, T. Dietl

Abstract: The form of an effective electron-electron interaction in a quantum wire with a large static dielectric constant is determined and the resulting properties of the electron liquid in such a one-dimensional system are described. The exchange and correlation energies are evaluated and a possibility of a paramagnetic-ferromagnetic phase transition in the ground state of such a system is discussed. L… ▽ More The form of an effective electron-electron interaction in a quantum wire with a large static dielectric constant is determined and the resulting properties of the electron liquid in such a one-dimensional system are described. The exchange and correlation energies are evaluated and a possibility of a paramagnetic-ferromagnetic phase transition in the ground state of such a system is discussed. Low-energy excitations are briefly described. △ Less

Submitted 23 December, 1998; originally announced December 1998.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 60, 1507-1510 (1999)

Magnetoconductance noise and irreversibilities in submicron wires of spin-glass n-CdMnTe

Authors: J. Jaroszynski, J. Wrobel, G. Karczewski, T. Wojtowicz, T. Dietl

Abstract: Signatures of spin-glass freezing such as the appearance of 1/f conductance noise, the recovery of universal conductance fluctuations, aging, as well as magnetic and thermal irreversibilities are detected in mesoscopic wires of CdMnTe:I at millikelvin temperatures. Spectral characteristics of conductance time series are consistent with the droplet model of short-range spin-glasses. Signatures of spin-glass freezing such as the appearance of 1/f conductance noise, the recovery of universal conductance fluctuations, aging, as well as magnetic and thermal irreversibilities are detected in mesoscopic wires of CdMnTe:I at millikelvin temperatures. Spectral characteristics of conductance time series are consistent with the droplet model of short-range spin-glasses. △ Less

Submitted 29 April, 1998; originally announced April 1998.

Comments: 4 pages revtex, 3 gif figures, Phys. Rev. Lett. 98 (likely)

Report number: IF 09-97

Journal ref: Phys. Rev. Lett. 80 (1998) 5635

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

Authors: G. Brunthaler, T. Dietl, A. Prinz, M. Sawicki, J. Jaroszynski, P. Glod, F. Schaffler, G. Bauer, D. K. Maude, J. C. Portal

Abstract: A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particl… ▽ More A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures. △ Less

Submitted 17 December, 1997; originally announced December 1997.

Comments: 5 pages, 3 figures, Solid State Communications, in print

Report number: HL-97-12

Journal ref: Solid State Commun. 106, 157 (1998)