Showing 1–50 of 143 results for author: Dietl, T

Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling

Authors: D. Sztenkiel, K. Gas, N. Gonzalez Szwacki, M. Foltyn, C. Sliwa, T. Wojciechowski, J. Z. Domagala, D. Hommel, M. Sawicki, T. Dietl

Abstract: We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we… ▽ More We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Comments: 18 pages, 10 Figures

CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect

Authors: Giuseppe Cuono, Carmine Autieri, Tomasz Dietl

Abstract: Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te… ▽ More Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te and (Hg,Mn)Te, and examine their suitability for the fabrication of ferromagnetic barriers or ferromagnetic topological quantum wells, respectively. To account for the strong correlation of transition metal d electrons we employ hybrid functionals with different mixing parameters aHSE focusing on aHSE = 0.32, which better reproduces the experimental band gaps in HgTe, CdTe, Hg0.875Mn0.125Te, and Cd0.875Mn0.125Te. We find that Cr, like Mn, acts as an isoelectronic dopant but V can be an in-gap donor in CdTe and a resonant donor in HgTe, similar to the case of Fe in HgSe. From the magnetic point of view, Cr-do** results in a ferromagnetic phase within the general gradient approximation (GGA) but interactions become antiferromagnetic within hybrid functionals. However, (Hg,V)Te is a ferromagnet within both exchange-correlation functionals in a stark contrast to (Hg,Mn)Te for which robust antiferromagnetic coupling is found theoretically and experimentally. Furthermore, we establish that the Jahn-Teller effect is relevant only in the case of Cr-do**. Considering lower defect concentrations in HgTe-based quantum wells compared to (Bi,Sb)3Te2 layers, our results imply that HgTe quantum wells or (Cd,Hg)Te barriers containing either V or Cr show advantages over (Bi,Sb,Cr,V)3Te2-based QAHE systems but whether (i) ferromagnetic coupling will dominate in the Cr case and (ii) V will not introduce too many electrons to the quantum well is to be checked experimentally △ Less

Submitted 27 December, 2023; originally announced December 2023.

Comments: 9 pages, 7 figures

Tight-binding theory of spin-spin interactions, Curie temperatures, and quantum Hall effects in topological (Hg,Cr)Te in comparison to non-topological (Zn,Cr)Te, and (Ga,Mn)N

Authors: Cezary Śliwa, Tomasz Dietl

Abstract: Earlier theoretical results on $p$-$d$ and $d$-$d$ exchange interactions for zinc-blende semiconductors with $\mathrm{Cr}^{2{+}}$ and $\mathrm{Mn}^{3{+}}$ ions are revisited and extended by including contributions beyond the dominating ferromagnetic (FM) superexchange term [i.e., the interband Bloembergen-Rowland-Van Vleck contribution and antiferromagnetic (AFM) two-electron term], and applied to… ▽ More Earlier theoretical results on $p$-$d$ and $d$-$d$ exchange interactions for zinc-blende semiconductors with $\mathrm{Cr}^{2{+}}$ and $\mathrm{Mn}^{3{+}}$ ions are revisited and extended by including contributions beyond the dominating ferromagnetic (FM) superexchange term [i.e., the interband Bloembergen-Rowland-Van Vleck contribution and antiferromagnetic (AFM) two-electron term], and applied to topological Cr-doped HgTe and non-topological (Zn,Cr)Te and (Ga,Mn)N in zinc-blende and wurtzite crystallographic structures. From the obtained values of the $d$-$d$ exchange integrals $J_{ij}$, and by combining the Monte-Carlo simulations with the percolation theory for randomly distributed magnetic ions, we determine magnitudes of Curie temperatures $T_{\text{C}}(x)$ for $\mathrm{Zn}_{1-x}\mathrm{Cr}_x\mathrm{Te}$ and $\mathrm{Ga}_{1-x}\mathrm{Mn}_x\mathrm{N}$ and compare to available experimental data. Furthermore, we find that competition between FM and AFM $d$-$d$ interactions can lead to a spin-glass phase in the case of $\mathrm{Hg}_{1-x}\mathrm{Cr}_x\mathrm{Te}$. This competition, along with a relatively large magnitude of the AF $p$-$d$ exchange energy $N_0β$ can stabilize the quantum spin Hall effect, but may require the application of tilted magnetic field to observe the quantum anomalous Hall effect in HgTe quantum wells doped with Cr, as confirmed by the Chern number determination. △ Less

Submitted 5 June, 2024; v1 submitted 30 October, 2023; originally announced October 2023.

Comments: 19 pages, 11 figures

Ab-initio overestimation of the topological region in Eu-based compounds

Authors: Giuseppe Cuono, Raghottam M. Sattigeri, Carmine Autieri, Tomasz Dietl

Abstract: An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the… ▽ More An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the computational studies to the whole class of systems EuCd2X2 (X = P, As, Sb, Bi), to EuIn2X2 (X = P, As, Sb), and to nonmagnetic AEIn2As2 (AE= Ca, Sr, Ba) employing a hybrid functional method. We find that our approach provides the magnitude of the energy gap for EuCd2As2 in agreement with the experimental value. Actually, our results indicate that EuSn2As2, BaIn2As2, EuCd2Bi2 and EuCd2SbBi are robust topological insulators, while all other compounds are topologically trivial semiconductors. The trivial band gaps of EuCd2P2, EuCd2As2 and EuCd2Sb2 are in the range of 1.38-1.48 eV, 0.72-0.79 eV and 0.46-0.49 eV, respectively. The topologically trivial Eu-based systems are antiferromagnetic semiconductors with a strong red shift of the energy gap in a magnetic field caused by the exchange coupling of the band states to spins localized on the 4f-shell of Eu ions. Additionally, the EuIn2X2 (X = P, As) compounds show altermagnetic exchange-induced band spin-splitting, particularly noticeable in the case of states derived from 5d-Eu orbitals. △ Less

Submitted 23 August, 2023; v1 submitted 18 May, 2023; originally announced May 2023.

Comments: 16 pages, 18 figures, 1 table

Journal ref: Physical Review B 108, 075150 (2023)

EuCd$_2$As$_2$: a magnetic semiconductor

Authors: D. Santos-Cottin, I. Mohelský, J. Wyzula, F. Le Mardelé, I. Kapon, S. Nasrallah, N. BarišIć, I. Živković, J. R. Soh, F. Guo, K. Rigaux, M. Puppin, J. H. Dil, B. Gudac, Z. Rukelj, M. Novak, A. B. Kuzmenko, C. C. Homes, Tomasz Dietl, M. Orlita, Ana Akrap

Abstract: EuCd$_2$As$_2$ is now widely accepted as a topological semimetal in which a Weyl phase is induced by an external magnetic field. We challenge this view through firm experimental evidence using a combination of electronic transport, optical spectroscopy and excited-state photoemission spectroscopy. We show that the EuCd$_2$As$_2$ is in fact a semiconductor with a gap of 0.77 eV. We show that the ex… ▽ More EuCd$_2$As$_2$ is now widely accepted as a topological semimetal in which a Weyl phase is induced by an external magnetic field. We challenge this view through firm experimental evidence using a combination of electronic transport, optical spectroscopy and excited-state photoemission spectroscopy. We show that the EuCd$_2$As$_2$ is in fact a semiconductor with a gap of 0.77 eV. We show that the externally applied magnetic field has a profound impact on the electronic band structure of this system. This is manifested by a huge decrease of the observed band gap, as large as 125~meV at 2~T, and consequently, by a giant redshift of the interband absorption edge. However, the semiconductor nature of the material remains preserved. EuCd$_2$As$_2$ is therefore a magnetic semiconductor rather than a Dirac or Weyl semimetal, as suggested by {\em ab initio} computations carried out within the local spin-density approximation. △ Less

Submitted 11 October, 2023; v1 submitted 19 January, 2023; originally announced January 2023.

Comments: Accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 131, 186704 (2023)

Engineering axion insulator phase in superlattices with inversion symmetry breaking

Authors: Rajibul Islam, Sougata Mardanya, Alexander Lau, Giuseppe Cuono, Tay-Rong Chang, Bahadur Singh, Carlo M. Canali, Tomasz Dietl, Carmine Autieri

Abstract: We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnT… ▽ More We study theoretically the interplay between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results show the evolution of the magnetic topological phases with respect to the magnetic configurations. An axion insulator phase is observed for the antiferromagnetic order with the out-of-plane Néel vector direction below a critical thickness of MnTe, which is the ground state amongst all magnetic configurations. Defining $T$ as the time-reversal symmetry, this axion insulator phase is protected by a magnetic two-fold rotational symmetry $C_2{\cdot}T$. The axion insulator phase evolves into a trivial insulator as we increase the thickness of the magnetic layers. By switching the Néel vector direction into the $ab$ plane, the system realizes different antiferromagnetic topological insulators depending on the thickness of MnTe. These phases feature gapless surface Dirac cones shifted away from high-symmetry points on surfaces perpendicular to the Néel vector direction of the magnetic layers. In the presence of ferromagnetism, the system realizes a magnetic Weyl semimetal and a ferromagnetic semimetal for out-of-plane and in-plane magnetization directions, respectively. We observe large anomalous Hall conductivity in the presence of ferromagnetism in the three-dimensional superlattice. △ Less

Submitted 19 February, 2023; v1 submitted 9 November, 2022; originally announced November 2022.

Comments: 14 pages, 13 figures

Journal ref: Phys. Rev. B 107, 125102 (2023)

Quantitative theory of backscattering in topological HgTe and (Hg,Mn)Te quantum wells: acceptor states, Kondo effect, precessional dephasing, and bound magnetic polaron

Authors: Tomasz Dietl

Abstract: We present the theory and numerical evaluations of the backscattering rate determined by acceptor holes or Mn spins in HgTe and (Hg,Mn)Te quantum wells in the quantum spin Hall regime. The role of anisotropic s-p and sp-d exchange interactions, Kondo coupling, Luttinger liquid effects, precessional dephasing, and bound magnetic polarons is quantified. The determined magnitude and temperature depen… ▽ More We present the theory and numerical evaluations of the backscattering rate determined by acceptor holes or Mn spins in HgTe and (Hg,Mn)Te quantum wells in the quantum spin Hall regime. The role of anisotropic s-p and sp-d exchange interactions, Kondo coupling, Luttinger liquid effects, precessional dephasing, and bound magnetic polarons is quantified. The determined magnitude and temperature dependence of conductance are in accord with experimental results for HgTe and (Hg,Mn)Te quantum wells. △ Less

Submitted 24 February, 2023; v1 submitted 7 September, 2022; originally announced September 2022.

Comments: 12 pages, 8 figures, companion paper to arXiv:2206.01613, Phys. Rev. Lett. 130, 086202 (2023).; v2 contains modifications resulting from the review process

Journal ref: Phys. Rev. B 107, 085421 (2023)

Effects of charge dopants in quantum spin Hall materials

Authors: Tomasz Dietl

Abstract: Semiconductors' sensitivity to electrostatic gating and do** accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase tr… ▽ More Semiconductors' sensitivity to electrostatic gating and do** accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells. △ Less

Submitted 23 February, 2023; v1 submitted 3 June, 2022; originally announced June 2022.

Comments: 5 pages, 3 figures; companion paper to arXiv:2209.03283, Phys. Rev. B 107, 085421 (2023), v3 contains modifications resulting from the review process

Journal ref: Phys. Rev. Lett. 130, 086202 (2023)

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Authors: Ghulam Hussain, Giuseppe Cuono, Rajibul Islam, Artur Trajnerowicz, Jarosław Jureńczyk, Carmine Autieri, Tomasz Dietl

Abstract: We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and… ▽ More We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors. △ Less

Submitted 18 March, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Comments: 11 figures, 13 pages

Journal ref: J. Phys. D: Appl. Phys. 55 495301 (2022)

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

Authors: Rajibul Islam, Barun Ghosh, Giuseppe Cuono, Alexander Lau, Wojciech Brzezicki, Arun Bansil, Amit Agarwal, Bahadur Singh, Tomasz Dietl, Carmine Autieri

Abstract: In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced… ▽ More In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring do**, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion. △ Less

Submitted 7 April, 2022; v1 submitted 31 December, 2021; originally announced December 2021.

Comments: 19 pages, 16 figures. Paper accepted in Physical Review Research

Journal ref: Physical Review RESEARCH 4, 023114 (2022)

HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures

Authors: I. Yahniuk, A. Kazakov, B. Jouault, S. S. Krishtopenko, S. Kret, G. Grabecki, G. Cywiński, N. N. Mikhailov, S. A. Dvoretskii, J. Przybytek, V. I. Gavrilenko, F. Teppe, T. Dietl, W. Knap

Abstract: HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of t… ▽ More HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of the magnetoresistance of different of HgTe quantum wells as a function temperature and magnetic field, determining the critical magnetic field $B_c$. We demonstrate that for QWs of specific width $B_c$ becomes low enough to grant observation of remarkably wide QHE plateaus at the filling factor ${v=-1}$ (holes) in relaxed cryomagnetic conditions: while using commercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvin provided by ${^4He}$ liquid system only. Band structure calculations allow us to explain qualitatively observed phenomena due to the interplay between light holes and heavy holes energy sub-bands (side maxima of the valence band). Our work clearly shows that the peculiar band structure properties of HgTe QWs with massless Dirac fermions make them an ideal platform for develo** metrological devices with relaxed cryomagnetic conditions. △ Less

Submitted 15 November, 2021; originally announced November 2021.

Superexchange dominates in magnetic topological insulators

Authors: Cezary Sliwa, Carmine Autieri, Jacek A. Majewski, Tomasz Dietl

Abstract: It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (th… ▽ More It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the magnitude of the interband contribution is small even in topological systems. From the proposed theoretical approach and our computational studies of magnetism in Mn-doped HgTe and CdTe, we conclude that, in the absence of band carriers, the superexchange dominates, and its sign depends on the coordination and charge state of magnetic impurities rather than on the topological class of the host material. △ Less

Submitted 4 February, 2022; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: 12 pages, 4 figures; new version contains extended Supplemental Material

Journal ref: Physical Review B 104, L220404 (2021)

From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins

Authors: Tomasz Dietl

Abstract: The abundance of semiconductors in our smartphones, computers, fiber optic junctions, cars, light sources, photovoltaic and thermoelectric cells results from the possibilities of controlling their properties through do**, lighting, and applying various fields. This paper, a part of the volume celebrating 100 years of the Polish Physical Society, presents a biased selection of worthwhile results… ▽ More The abundance of semiconductors in our smartphones, computers, fiber optic junctions, cars, light sources, photovoltaic and thermoelectric cells results from the possibilities of controlling their properties through do**, lighting, and applying various fields. This paper, a part of the volume celebrating 100 years of the Polish Physical Society, presents a biased selection of worthwhile results obtained by researchers at the Institute of Physics, Polish Academy of Sciences relevant, as seen today, to topological matter and spintronics. Comprehensive studies, combining materials development, experimental investigations, and theoretical description of narrow-gap and dilute-magnetic semiconductors have been especially significant in this context. This survey also emphasizes, in an autobiographical tone, a half of a century of the author's intellectual emotions accompanying the rise of ideas and quantitative theories, allowing identifying the physics behind ongoing and future observations. △ Less

Submitted 23 February, 2023; v1 submitted 12 March, 2021; originally announced March 2021.

Comments: version 3 is updated by recent results

Journal ref: Acta Phys. Polon. A 139, 355 (2021)

Realization of the Chern insulator and Axion insulator phases in antiferromagnetic $MnTe$-$Bi_2(Se, Te)_3$-$MnTe$ heterostructures

Authors: N. Pournaghavi, M. F. Islam, Rajibul Islam, Carmine Autieri, Tomasz Dietl, C. M. Canali

Abstract: Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te… ▽ More Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te$_3$) TI thin film sandwiched between two antiferromagnetic MnTe layers. We find that an orthogonal exchange field from the MnTe layers, stabilized by a small anisotropy barrier, opens an energy gap of the order of 10 meV at the Dirac point of the TI film. A topological analysis demonstrates that, depending on the relative orientation of the exchange field at the two interfaces, the total Chern number of the system is either ${\cal C} = 1$ or ${\cal C} = 0$, characteristic of the CI and the AI phase, respectively. Non-topological surface states inside the energy-gap region, caused by the interface potential, complicate this identification. Remarkably though, the calculation of the anomalous Hall conductivity shows that such non-topological surface states do not affect the topology-induced transport properties. Given the size of the exchange gap, we estimate that gapless chiral edge states, leading to the quantum anomalous Hall effect, should emerge on the sidewalls of these heterostructures in the CI phase for widths $\ge 200$ nm. We also discuss the possibility of inducing transitions between the CI and the AI phases by means of the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer. △ Less

Submitted 15 May, 2021; v1 submitted 15 January, 2021; originally announced January 2021.

Comments: 13 pages, 8 figures

Journal ref: Phys. Rev. B 103, 195308 (2021)

Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors

Authors: Carmine Autieri, Cezary Śliwa, Rajibul Islam, Giuseppe Cuono, Tomasz Dietl

Abstract: Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magnetooptical effects as well as determines spin-spin interactions in magnetic insulators and semiconductors. However, even in archetypical dilute magnetic semiconductors such as Cd$_{1-x}$Mn$_x$Te and Hg$_{1-x}$Mn$_x$Te the evolution of this coupling with the wave vector is not unders… ▽ More Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magnetooptical effects as well as determines spin-spin interactions in magnetic insulators and semiconductors. However, even in archetypical dilute magnetic semiconductors such as Cd$_{1-x}$Mn$_x$Te and Hg$_{1-x}$Mn$_x$Te the evolution of this coupling with the wave vector is not understood. A series of experiments have demonstrated that exchange-induced splitting of magnetooptical spectra of Cd$_{1-x}$Mn$_x$Te and Zn$_{1-x}$Mn$_x$Te at the L points of the Brillouin zone is, in contradiction to the existing theories, more than one order of magnitude smaller compared to its value at the zone center and can show an unexpected sign of the effective Landé factors. The origin of these findings we elucidate quantitatively by combining: (i) relativistic first-principles density functional calculations; (ii) a tight-binding approach that takes carefully into account k-dependence of the potential and kinetic sp-d exchange interactions; (iii) a theory of magnetic circular dichroism (MCD) for $E_1$ and $E_1$ + $Δ_1$ optical transitions, developed here within the envelope function $kp$ formalism for the L point of the Brillouin zone in zinc-blende crystals. This combination of methods leads to the conclusion that the physics of MCD at the boundary of the Brillouin zone is strongly affected by the strength of two relativistic effects in particular compounds: (i) the mass-velocity term that controls the distance of the conduction band at the L point to the upper Hubbard band of Mn ions and, thus, a relative magnitude and sign of the exchange splittings in the conduction and valence bands; (ii) the spin-momentum locking by spin-orbit coupling that reduces exchange splitting depending on the orientation of particular L valleys with respect to the magnetization direction. △ Less

Submitted 22 October, 2021; v1 submitted 11 June, 2020; originally announced June 2020.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. B 103, 115209 (2021)

Magnetic-field-induced topological phase transition in Fe-doped (Bi,Sb)$_2$Se$_3$ heterostructures

Authors: Y. Satake, J. Shiogai, G. P. Mazur, S. Kimura, S. Awaji, K. Fujiwara, T. Nojima, K. Nomura, S. Souma, T. Sato, T. Dietl, A. Tsukazaki

Abstract: Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence… ▽ More Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, do**, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting. △ Less

Submitted 21 February, 2020; originally announced February 2020.

Comments: 31 pages, 4 figures and supplementary 30 pages, 11 figures

Journal ref: Phys. Rev. Materials 4, 044202 (2020)

Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se

Authors: Alexander Kazakov, Wojciech Brzezicki, Timo Hyart, Bartłomiej Turowski, Jakub Polaczyński, Zbigniew Adamus, Marta Aleszkiewicz, Tomasz Wojciechowski, Jaroslaw Z. Domagala, Ondrej Caha, Andrei Varykhalov, Gunther Springholz, Tomasz Wojtowicz, Valentine V. Volobuev, Tomasz Dietl

Abstract: Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates… ▽ More Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates Berry's phase quantization, leading to additional dephasing in weak-antilocalization magnetoresistance (WAL-MR). Our experimental studies of WAL-MR corroborate these theoretical expectations in (111) Pb$_{1-x}$Sn$_x$Se thin film with Sn contents $x$ corresponding to both topological crystalline insulator and topologically trivial phases. In particular, we find the shortening of the phase coherence length in samples with intentionally broken mirror symmetry. Our results indicate that the classification of quantum transport phenomena into universality classes should encompass, in addition to time-reversal and spin-rotation invariances, spatial symmetries in specific systems. △ Less

Submitted 21 June, 2021; v1 submitted 18 February, 2020; originally announced February 2020.

Comments: Accepted version

Journal ref: Phys. Rev. B 103, 245307 (2021)

Families of magnetic semiconductors -- an overview

Authors: Tomasz Dietl, Alberta Bonanni, Hideo Ohno

Abstract: The interplay of magnetic and semiconducting properties has been in the focus since more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor families, including europium chalcogenides, chromium spinels, dilute magnetic semiconductors, dilute ferromagnetic semiconductors and insulators, mentioning also s… ▽ More The interplay of magnetic and semiconducting properties has been in the focus since more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor families, including europium chalcogenides, chromium spinels, dilute magnetic semiconductors, dilute ferromagnetic semiconductors and insulators, mentioning also sources of non-uniformities in the magnetization distribution, accounting for an apparent high Curie temperature ferromagnetism in many systems. Our survey is carried out from today's perspective of ferromagnetic and antiferromagnetic spintronics as well as of the emerging fields of magnetic topological materials and atomically thin 2D layers. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: 7 pages, 87 references

Journal ref: J. Semicond. 40, 080301 (2019)

Gating effects in antiferromagnetic CuMnAs

Authors: M. J. Grzybowski, P. Wadley, K. W. Edmonds, R. P. Campion, K. Dybko, M. Majewicz, B. L. Gallagher, M. Sawicki, T. Dietl

Abstract: Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directio… ▽ More Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing ionic liquid as a gate insulator. The data allow to determine the carrier type, concentration, and mobility independently of the Hall effect that may be affected by an anomalous component. △ Less

Submitted 9 August, 2019; originally announced August 2019.

Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

Authors: Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wróbel, Grzegorz Cywiński, 1 Sławomir Kret, Tomasz Dietl, Wojciech Knap

Abstract: We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to… ▽ More We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices. △ Less

Submitted 17 October, 2018; originally announced October 2018.

Comments: 8 pages, 10 figures

Journal ref: npj Quantum Materials (2019) 4:13

Nematicity of correlated systems driven by anisotropic chemical phase separation

Authors: Ye Yuan, René Hübner, Magdalena Birowska, Chi Xu, Mao Wang, Slawomir Prucnal, Rafal Jakiela, Kay Potzger, Roman Böttger, Stefan Facsko, Jacek A. Majewski, Manfred Helm, Maciej Sawicki, Shengqiang Zhou, Tomasz Dietl

Abstract: The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi… ▽ More The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems. △ Less

Submitted 2 November, 2018; v1 submitted 16 July, 2018; originally announced July 2018.

Comments: 16 pages and 11 figures

Journal ref: Phys. Rev. Materials 2, 114601 (2018)

Thermodynamic perturbation theory for non-interacting quantum particles with application to spin-spin interactions in solids

Authors: Cezary Sliwa, Tomasz Dietl

Abstract: The determination of the Landau free energy (the grand thermodynamic potential) by a perturbation theory is advanced to arbitrary order for the specific case of non-interacting fermionic systems perturbed by a one-particle potential. Peculiar features of the formalism are highlighted, and its applicability for bosons is indicated. The results are employed to develop a more explicit approach descri… ▽ More The determination of the Landau free energy (the grand thermodynamic potential) by a perturbation theory is advanced to arbitrary order for the specific case of non-interacting fermionic systems perturbed by a one-particle potential. Peculiar features of the formalism are highlighted, and its applicability for bosons is indicated. The results are employed to develop a more explicit approach describing exchange interactions between spins of Anderson's magnetic impurities in metals, semiconductors, and insulators. Within the fourth order our theory provides on the equal footing formulae for the Ruderman-Kittel-Kasuya-Yosida, Bloembergen-Rowland, superexchange, and two-electron exchange integrals at non-zero temperature. △ Less

Submitted 9 February, 2018; originally announced February 2018.

Comments: 11 pages

Journal ref: Phys. Rev. B 98, 035105 (2018)

Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers

Authors: M. Sawicki, O. Proselkov, C. Sliwa, P. Aleshkevych, J. Z. Domagala, J. Sadowski, T. Dietl

Abstract: Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain a… ▽ More Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range. △ Less

Submitted 23 February, 2018; v1 submitted 31 January, 2018; originally announced February 2018.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. B 97, 184403 (2018)

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

Authors: Ye Yuan, Chi Xu, René Hübner, Rafal Jakiela, Roman Böttger, Manfred Helm, Maciej Sawicki, Tomasz Dietl, Shengqiang Zhou

Abstract: Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of… ▽ More Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in In1-xMnxAs compared to Ga1-xMnxAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Comments: 23 pages, 10 figures, to appear at Phys. Rev. Mater

Journal ref: Phys. Rev. Mater 1, 054401 (2017)

Experimental search for the origin of low-energy modes in topological materials

Authors: G. P. Mazur, K. Dybko, A. Szczerbakow, J. Z. Domagala, A. Kazakov, M. Zgirski, E. Lusakowska, S. Kret, J. Korczak, T. Story, M. Sawicki, T. Dietl

Abstract: Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles… ▽ More Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles, and show to what extent our data are consistent with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations to a collective state adjacent to atomic steps at topological surfaces. △ Less

Submitted 27 July, 2019; v1 submitted 12 September, 2017; originally announced September 2017.

Comments: 15 pages, 27 figures (with Supplemental Material)

Journal ref: Phys. Rev. B 100, 041408(R) (2019)

Comment on "Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]" by M. Kobayashi et al., arXiv:1608.07718

Authors: S. Souma, L. Chen, R. Oszwałdowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, T. Takahashi

Abstract: Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of fe… ▽ More Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of ferromagnetic (Ga,Mn)As. In this comment, we show that the assignment of bands' positions in respect to EF by Kobayashi et al. is not consistent with our data. By comparing the ARPES result to band-structure calculations, we demonstrate clearly that EF resides inside the valence band in accordance with the p-d Zener model. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: 5 pages, 1 figure

Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As

Authors: S. Souma, L. Chen, R. Oszwaldowski, T. Sato, F. Matsukura, T. Dietl, H. Ohno, T. Takahashi

Abstract: Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off ban… ▽ More Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the valence band in this model compound. By a direct determination of the distance of the split-off band to the Fermi energy EF, we conclude that EF is located within the heavy/light hole band. However, the bands are strongly perturbed by disorder and disorder-induced carrier correlations that lead to the Coulomb gap at EF, which we resolve experimentally in a series of samples, and show that its depth and width enlarge when the Curie temperature decreases. Furthermore, we have detected surprising linear magnetic dichroism in photoemission spectra of the split-off band. By a quantitative theoretical analysis we demonstrate that it arises from the Dresselhaus-type spin-orbit term in zinc-blende crystals. The spectroscopic access to the magnitude of such asymmetric part of spin-orbit coupling is worthwhile, as they account for spin-orbit torque in spintronic devices of ferromagnets without inversion symmetry. △ Less

Submitted 7 June, 2016; originally announced June 2016.

Comments: 30 pages, 5 figures, supplemental info included

Journal ref: Scientific Reports 6, 27266 (2016)

Stretching magnetism with an electric field in a nitride semiconductor

Authors: D. Sztenkiel, M. Foltyn, G. P. Mazur, R. Adhikari, K. Kosiel, K. Gas, M. Zgirski, R. Kruszka, R. Jakiela, Tian Li, A. Piotrowska, A. Bonanni, M. Sawicki, T. Dietl

Abstract: By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that… ▽ More By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap region, and the Mn3+ ions show strong single-ion anisotropy. We establish that (Ga,Mn)N sustains an electric field up to at least 5 MV/cm, indicating that Mn do** turns GaN into a worthwhile semi-insulating material. Under these conditions, the magnetoelectric coupling may be driven by the inverse piezoelectric effect that stretches the elementary cell along the c axis and, thus, affects the magnitude of magnetic anisotropy. We develop a corresponding theory and show that it describes the experimentally determined dependence of magnetization on the electric field quantitatively with no adjustable parameters as a function of the magnetic field and temperature. In this way, our work bridges two research domains developed so far independently: piezoelectricity of wurtzite semiconductors and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components. △ Less

Submitted 2 November, 2016; v1 submitted 23 April, 2016; originally announced April 2016.

Comments: 11 pages, 10 figures, version after revision

Journal ref: Nat. Commun. 7, 13232 (2016)

Conductance oscillations in quantum point contacts of InAs/GaSb heterostructures

Authors: Michał Papaj, Łukasz Cywiński, Jerzy Wróbel, Tomasz Dietl

Abstract: We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an oscillatory decay as a function of the distance to the edge. This is in contrast to the behavior of the edge states in HgTe quantum wells, which decay into the bulk in a… ▽ More We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an oscillatory decay as a function of the distance to the edge. This is in contrast to the behavior of the edge states in HgTe quantum wells, which decay into the bulk in a simple exponential manner. The difference between the two materials is brought about by spatial separation of electrons and holes in InAs/GaSb, which affects the magnitudes of the parameters describing the particle-hole asymmetry and the strength of intersubband coupling within the Bernevig-Hughes-Zhang model. We show that the character of the wave function decay impacts directly the dependence of the point contact conductance on the constriction width and the Fermi energy, which can be verified experimentally and serve to determine accurately the values of relevant parameters. In the case of InAs/GaSb heterostructures the conductance magnitude oscillates as a function of the constriction width following the oscillations of the edge state penetration, whereas in HgTe/(Hg,Cd)Te quantum wells a single switching from transmitting to reflecting contact is predicted. △ Less

Submitted 14 May, 2016; v1 submitted 22 February, 2016; originally announced February 2016.

Comments: 8 pages, 6 figures, accepted version, references and additional paragraph added

Journal ref: Phys. Rev. B 93, 195305 (2016)

(Ga,Mn)As under pressure: a first-principles investigation

Authors: N. Gonzalez Szwacki, Jacek A. Majewski, T. Dietl

Abstract: Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25\%$ and $12.5\%$ under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for $x=6.25\%$ that non-hybridized Mn-3$d$ levels and Mn-induced states reside about 5 and 0.4 eV be… ▽ More Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25\%$ and $12.5\%$ under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for $x=6.25\%$ that non-hybridized Mn-3$d$ levels and Mn-induced states reside about 5 and 0.4 eV below the Fermi energy, respectively. For elevated pressures, the Mn-3$d$ levels, Mn-induced states, and the Fermi level shift towards higher energies, however, the position of the Mn-induced states relative to the Fermi energy remains constant due to hybridization of the Mn-3$d$ levels with the valence As-4$p$ orbitals. We also evaluate, employing Monte Carlo simulations, the Curie temperature ($T_{\rm C}$). At zero pressure, we obtain $T_{\rm C}=181$K, whereas the pressure-induced changes in $T_{\rm C}$ are d$T_{\rm C}$/d$p=+4.3$K/GPa for $x=12.5\%$ and an estimated value of d$T_{\rm C}$/d$p\approx+2.2$K/GPa for $x=6.25\%$ under pressures up to 6 GPa. The determined values of d$T_{\rm C}$/d$p$ compare favorably with d$T_{\rm C}$/d$p=+$(2-3) K/GPa at $p\leq1.2$GPa found experimentally and estimated within the $p$-$d$ Zener model for Ga$_{0.93}$Mn$_{0.07}$As in the regime where hole localization effects are of minor importance [M. Gryglas-Borysiewicz $et$ $al$., Phys. Rev. B ${\bf 82}$, 153204 (2010)]. △ Less

Submitted 19 February, 2015; v1 submitted 12 February, 2015; originally announced February 2015.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 91, 184409 (2015)

Spinodal nanodecomposition in magnetically doped semiconductors

Authors: T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S. Kuroda, M. Tanaka, Pham Nam Hai, H. Katayama-Yoshida

Abstract: This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Mon… ▽ More This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three- and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, co-do** by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear either in the form of nanodots (the {\em dairiseki} phase) or nanocolumns (the {\em konbu} phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn- and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magneto-optical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication. △ Less

Submitted 22 December, 2015; v1 submitted 27 December, 2014; originally announced December 2014.

Comments: 72 pages, 79 figures

Journal ref: Rev. Mod. Phys. 87, 1311-1377 (2015)

Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies

Authors: R. Adhikari, W. Stefanowicz, B. Faina, M. Sawicki, T. Dietl, A. Bonanni

Abstract: A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by me… ▽ More A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., $n$-(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between $n$-type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds. △ Less

Submitted 12 December, 2014; originally announced December 2014.

Comments: 5 pages, 5 figures

Spin dynamics of a confined electron interacting with magnetic or nuclear spins: A semiclassical approach

Authors: Tomasz Dietl

Abstract: A physically transparent and mathematically simple semiclassical model is employed to examine dynamics in the central-spin problem. The results reproduce a number of previous findings obtained by various quantum approaches and, at the same time, provide information on the electron spin dynamics and Berry's phase effects over a wider range of experimentally relevant parameters than available previo… ▽ More A physically transparent and mathematically simple semiclassical model is employed to examine dynamics in the central-spin problem. The results reproduce a number of previous findings obtained by various quantum approaches and, at the same time, provide information on the electron spin dynamics and Berry's phase effects over a wider range of experimentally relevant parameters than available previously. This development is relevant to dynamics of bound magnetic polarons and spin dephasing of an electron trapped by an impurity or a quantum dot, and coupled by a contact interaction to neighboring localized magnetic impurities or nuclear spins. Furthermore, it substantiates the applicability of semiclassical models to simulate dynamic properties of spintronic nanostructures with a mesoscopic number of spins. △ Less

Submitted 7 October, 2014; originally announced October 2014.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 91, 125204 (2015)

Experimental determination of Rashba spin-orbit coupling in wurtzite $n$-GaN:Si

Authors: W. Stefanowicz, R. Adhikari, T. Andrearczyk, B. Faina, M. Sawicki, J. A. Majewski, T. Dietl, A. Bonanni

Abstract: Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajec… ▽ More Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $α_{\text{R}}\,=\,(4.5 \pm 1)$ meV$Å$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of $α_{\text{R}}$ across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. It is found that electron-electron scattering with small energy transfer accounts for low temperature decoherence in these systems. △ Less

Submitted 5 May, 2014; v1 submitted 27 February, 2014; originally announced February 2014.

Comments: the version after the revision process

Journal ref: Physical Review B 89, 205201 (2014)

Orbital magnetization in dilute ferromagnetic semiconductors

Authors: Cezary Śliwa, Tomasz Dietl

Abstract: The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave fu… ▽ More The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. The computed magnitude of orbital magnetization is in accord with experimental values obtained by x-ray magnetic circular dichroism in (III,Mn)V compounds. The direct effect of the magnetic field on the hole spectrum is studied too, and employed to interpret a dependence of the Coulomb blockade maxima on the magnetic field in a single electron transistor with a (Ga,Mn)As gate. △ Less

Submitted 1 August, 2014; v1 submitted 10 February, 2014; originally announced February 2014.

Comments: the version after the revision process

Journal ref: Phys. Rev. B 90, 045202 (2014)

Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN

Authors: Thibaut Devillers, Mauro Rovezzi, Nevill Gonzalez Szwacki, Sylwia Dobkowska, Wiktor Stefanowicz, Dariusz Sztenkiel, Andreas Grois, Jan Suffczyński, Andrea Navarro-Quezada, Bogdan Faina, Tian Li, Pieter Glatzel, Francesco d'Acapito, Rafał Jakieła, Maciej Sawicki, Jacek A. Majewski, Tomasz Dietl, Alberta Bonanni

Abstract: Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron technique… ▽ More Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codo** of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors. △ Less

Submitted 13 November, 2013; originally announced November 2013.

Comments: Supplementary information available at http://www.nature.com/srep/2012/121010/srep00722/extref/srep00722-s1.pdf

Journal ref: T. Devillers et al., Sci. Rep. 2, 722 (2012)

Reducing influence of antiferromagnetic interactions on ferromagnetic properties of p-(Cd,Mn)Te quantum wells

Authors: C. Simserides, A. Lipinska, K. N. Trohidou, T. Dietl

Abstract: In order to explain the absence of hysteresis in ferromagnetic p-type (Cd,Mn)Te quantum wells (QWs), spin dynamics was previously investigated by Monte Carlo simulations combining the Metropolis algorithm with the determination of hole eigenfunctions at each Monte Carlo sweep. Short-range antiferromagnetic superexchange interactions between Mn spins - which compete with the hole-mediated long-rang… ▽ More In order to explain the absence of hysteresis in ferromagnetic p-type (Cd,Mn)Te quantum wells (QWs), spin dynamics was previously investigated by Monte Carlo simulations combining the Metropolis algorithm with the determination of hole eigenfunctions at each Monte Carlo sweep. Short-range antiferromagnetic superexchange interactions between Mn spins - which compete with the hole-mediated long-range ferromagnetic coupling - were found to accelerate magnetization dynamics if the the layer containing Mn spins is wider than the vertical range of the hole wave function. Employing this approach it is shown here that appreciate magnitudes of remanence and coercivity can be obtained if Mn ions are introduced to the quantum well in a delta-like fashion. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 4.5 pages, 3 figures

Journal ref: Physica E: Low-dimensional Systems and Nanostructures 42 (2010) 2694-2697

Theory of ferromagnetism driven by superexchange in dilute magnetic semiconductors

Authors: C. Simserides, J. A. Majewski, K. N. Trohidou, T. Dietl

Abstract: Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th cation coordination sphere in zinc-blende GaN. It is shown that for a set of experimentally determined input parameters there are no itinerant carriers and the… ▽ More Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th cation coordination sphere in zinc-blende GaN. It is shown that for a set of experimentally determined input parameters there are no itinerant carriers and the coupling between localized Mn$^{3+}$ spins in GaN proceeds via superexchange that is ferromagnetic for all explored $R_{ij}$ values. Extensive Monte Carlo simulations serve to evaluate the magnitudes of Curie temperature $T_\mathrm{C}$ by the cumulant crossing method. The theoretical values of $T_\mathrm{C}(x)$ are in quantitative agreement with the experimental data that are available for Ga$_{1-x}$Mn$_x$N with randomly distributed Mn$^{3+}$ ions with the concentrations $0.01 \leq x \leq 0.1$. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 4.5 pages 3 figures

Journal ref: European Physical Journal Web of Conferences 75, 01003 (2014)

Magnetooptical properties of (Ga,Fe)N layers

Authors: J. Papierska, J. -G. Rousset, W. Pacuski, P. Kossacki, A. Golnik, M. Nawrocki, J. A. Gaj, J. Suffczyński, I. Kowalik, W. Stefanowicz, M. Sawicki, T. Dietl, A. Navarro-Quezada, B. Faina, Tian Li, A. Bonanni

Abstract: Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals,… ▽ More Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed. △ Less

Submitted 15 August, 2013; originally announced August 2013.

Comments: 4 pages, 3 figures

Journal ref: Acta Physica Polonica A 120, 921 (2011)

Characterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Authors: A. Kovacs, B. Schaffer, M. S. Moreno, J. R. **schek, A. J. Craven, T. Dietl, A. Bonanni, R. E. Dunin-Borkowski

Abstract: Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled e… ▽ More Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth. △ Less

Submitted 30 July, 2013; originally announced July 2013.

Journal ref: Journal of Applied Physics 114, 033530 (2013)

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells

Authors: G. Grabecki, J. Wróbel, M. Czapkiewicz, Ł. Cywiński, S. Gierałtowska, E. Guziewicz, M. Zholudev, V. Gavrilenko, N. N. Mikhailov, S. A. Dvoretski, F. Teppe, W. Knap, T. Dietl

Abstract: We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the… ▽ More We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is ~100 micrometers. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance fluctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled. △ Less

Submitted 22 October, 2013; v1 submitted 23 July, 2013; originally announced July 2013.

Comments: 8 pages, 4 figures, published version

Journal ref: Phys. Rev. B 88, 165309 (2013)

Dilute ferromagnetic semiconductors: Physics and spintronic structures

Authors: Tomasz Dietl, Hideo Ohno

Abstract: This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, V_2-VI_3, IV-VI, I-II-V, and elemental group IV semiconductors are described paying p… ▽ More This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, V_2-VI_3, IV-VI, I-II-V, and elemental group IV semiconductors are described paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and non-trivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities. △ Less

Submitted 1 April, 2014; v1 submitted 12 July, 2013; originally announced July 2013.

Comments: 72 pages, 55 figures, this version contains referees' recommendations and is (virtually) identical to the printed one

Journal ref: Rev. Mod. Phys. 86, 187-251 (2014)

Phase diagram and critical behavior of the random ferromagnet $Ga_{1-x}Mn_xN$

Authors: S. Stefanowicz, G. Kunert, C. Simserides, J. A. Majewski, W. Stefanowicz, C. Kruse, S. Figge, Tian Li, R. Jakiela, K. N. Trohidou, A. Bonanni, D. Hommel, M. Sawicki, T. Dietl

Abstract: Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong dev… ▽ More Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong deviations from the magnetically clean case (x = 1), in particular, (i) an apparent breakdown of the Harris criterion; (ii) a non-monotonic crossover in the values of the susceptibility critical exponent gamma_eff between the high temperature and critical regimes, and (iii) a smearing of the critical region, which can be explained either by the Griffiths effects or by macroscopic inhomogeneities in the spin distribution with a variance Delta x = (0.2 +/- 0.1)%. △ Less

Submitted 21 June, 2013; originally announced June 2013.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 88, 081201(R) (2013)

Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N

Authors: J. -G. Rousset, J. Papierska, W. Pacuski, A. Golnik, M. Nawrocki, W. Stefanowicz, S. Stefanowicz, M. Sawicki, R. Jakiela, T. Dietl, A. Navarro-Quezada, B. Faina, T. Li, A. Bonanni, J. Suffczynski

Abstract: The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Op… ▽ More The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined. △ Less

Submitted 9 October, 2014; v1 submitted 31 May, 2013; originally announced May 2013.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 88, 115208 (2013)

Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands

Authors: Joanna Papierska, Bartłomiej S. Witkowski, Anastasiya Derkachova, Krzysztof P. Korona, Johannes Binder, Krzysztof Gałkowski, Łukasz Wachnicki, Marek Godlewski, Tomasz Dietl, Jan Suffczyński

Abstract: A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found t… ▽ More A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory. △ Less

Submitted 31 January, 2013; originally announced January 2013.

Comments: 14 pages, 5 figures

Journal ref: Plasmonics 8, 913 (2013)

Thickness dependence of magnetic properties of (Ga,Mn)As

Authors: O. Proselkov, D. Sztenkiel, W. Stefanowicz, M. Aleszkiewicz, J. Sadowski, T. Dietl, M. Sawicki

Abstract: We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We… ▽ More We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular. △ Less

Submitted 22 May, 2012; originally announced May 2012.

Comments: 4 pages, 4 figures and supplementary information 2 pages, 1 figure

Journal ref: Appl. Phys. Lett. 100, 262405 (2012)

GaMnN epitaxial films with high magnetization

Authors: Gerd Kunert, Sylwia Dobkowska, Tian Li, Helfried Reuther, Carsten Kruse, Stephan Figge, Rafal Jakiela, Alberta Bonanni, Jörg Grenzer, Wiktor Stefanowicz, Maciej Sawicki, Tomasz Dietl, Detlef Hommel

Abstract: We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribu… ▽ More We report on the fabrication of pseudomorphic wurtzite GaMnN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm^3. △ Less

Submitted 17 May, 2012; v1 submitted 15 May, 2012; originally announced May 2012.

Comments: 5 pages, 5 postscript figures, typo corrected, to appear in Applied Physics Letters Journal

Journal ref: Appl. Phys. Lett. 101, 022413 (2012)

Origin of low-temperature magnetic ordering in Ga1-xMnxN

Authors: M. Sawicki, T. Devillers, S. Gałȩski, C. Simserides, S. Dobkowska, B. Faina, A. Grois, A. Navarro-Quezada, K. N. Trohidou, J. A. Majewski, T. Dietl, A. Bonanni

Abstract: By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy… ▽ More By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators. △ Less

Submitted 29 February, 2012; v1 submitted 28 February, 2012; originally announced February 2012.

Comments: 4+ pages, 3 figures

Journal ref: Phys. Rev. B 85, 205204 (2012)

Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

Authors: M. Birowska, C. Sliwa, J. A. Majewski, T. Dietl

Abstract: It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a p… ▽ More It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Comments: 5 pages, 1 figure

Journal ref: Phys. Rev. Lett 108, 237203 (2012)

Homogenous and heterogeneous magnetism in (Zn,Co)O

Authors: M. Sawicki, E. Guziewicz, M. I. Lukasiewicz, O. Proselkov, I. A. Kowalik, W. Lisowski, P. Dluzewski, A. Wittlin, M. Jaworski, A. Wolska, W. Paszkowicz, R. Jakiela, B. S. Witkowski, L. Wachnicki, M. T. Klepka, F. J. Luque, D. Arvanitis, J. W. Sobczak, M. Krawczyk, A. Jablonski, W. Stefanowicz, D. Sztenkiel, M. Godlewski, T. Dietl

Abstract: A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough t… ▽ More A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough to homogenize the Co content along the growth direction results in the formation of (Zn,Co)O films with spatially modulated Co concentrations. All structures deposited at 160\circC show magnetic properties specific to dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short range antiferromagnetic interactions that lead to low temperature spin-glass freezing. It is demonstrated that ferromagnetic-like features, visible exclusively in layers grown at 200\circC and above, are associated with an interfacial mesh of metallic Co granules residing between the substrate and the (Zn,Co)O layer. This explains why the magnitude of ferromagnetic signal is virtually independent of the film thickness as well as elucidates the origin of magnetic anisotropy. Our conclusions have been derived for layers in which the Co concentration, distribution, and aggregation have been determined by: secondary-ion mass spectroscopy, electron probe micro-analysis, high-resolution transmission electron microscopy with capabilities allowing for chemical analysis; x-ray absorption near-edge structure; extended x-ray absorption fine-structure; x-ray photoemission spectroscopy, and x-ray circular magnetic dichroism. Macroscopic properties of these layers have been investigated by superconducting quantum interference device magnetometery and microwave dielectric losses allowing to confirm the important role of metallic inclusions. △ Less

Submitted 25 January, 2012; originally announced January 2012.

Comments: 23 pages, 22 figures

Journal ref: Phys. Rev. B 88, 085204 (2013)