Showing 1–14 of 14 results for author: Dianov, E M

Absorption and emission cross section of Yb3+ ions in Al2O3 and P2O5 doped fibers

Authors: M. A. Melkumov, I. A. Bufetov, K. S. Kravtsov, A. V. Shubin, E. M. Dianov

Abstract: The results of measurements of the emission and absorption cross section for the transition 2F5/2 -> 2F7/2 of Yb3+ ions in Al2O3 and P2O5 doped silica fibers are presented. Different techniques based on spectroscopic data, and more direct technique involving optical saturation of the transition are employed. The data obtained indicate an essential difference in cross section spectra of Yb3+ ions i… ▽ More The results of measurements of the emission and absorption cross section for the transition 2F5/2 -> 2F7/2 of Yb3+ ions in Al2O3 and P2O5 doped silica fibers are presented. Different techniques based on spectroscopic data, and more direct technique involving optical saturation of the transition are employed. The data obtained indicate an essential difference in cross section spectra of Yb3+ ions in alumosilicate and phosphosilicate fibers. △ Less

Submitted 10 February, 2015; originally announced February 2015.

Comments: 58 pages, in Russian, 19 figures

First-principle study of the near-IR luminescence centers in Bi2O3-GeO2 andBi2O3-SiO2 glasses

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and Bi$_2$O$_3$-Al$_2$O$_3$-SiO$_2$ hosts is performed. A comparison of calculated spectral properties of the centers with the experimental data on luminescence emi… ▽ More First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and Bi$_2$O$_3$-Al$_2$O$_3$-SiO$_2$ hosts is performed. A comparison of calculated spectral properties of the centers with the experimental data on luminescence emission and excitation spectra suggests that luminescence in the 1.2-1.3 $μ$m and 1.8-3.0 $μ$m ranges in Bi$_2$O$_3$-GeO$_2$ glasses and crystals is likely caused by $=$Bi$\cdots$Ge$\equiv$ and $=$Bi$\cdots$Bi$=$ centers, respectively, and the luminescence near 1.1 $μ$m in Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$ glasses and crystals may be caused by $=$Bi$\cdots$Ge$\equiv$ center with (AlO$_4$)$^-$ center in the second coordination shell of Ge atom. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 5 pages, 3 figures, 25 references

Journal ref: Optical Materials Express, Vol.5, Issue 1, pp. 163-168 (2015)

Infrared luminescence in Bi-doped Ge-S and As-Ge-S chalcogenide glasses and fibers

Authors: V. G. Plotnichenko, D. V. Philippovskiy, V. O. Sokolov, M. V. Sukhanov, A. P. Velmuzhov, M. F. Churbanov, E. M. Dianov

Abstract: Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$μ$m range with a lifetime about 6~$μ$s is discovered. Similar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistanc… ▽ More Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$μ$m range with a lifetime about 6~$μ$s is discovered. Similar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistance to crystallization and the intensity of the luminescence. Computer modeling of Bi-related centers shows that interstitial Bi$^+$ ions adjacent to negatively charged S vacancies are most likely responsible for the IR luminescence. △ Less

Submitted 30 January, 2014; originally announced January 2014.

Comments: 7 pages, 4 figures

Journal ref: Optical Materials Express, 4 366 (2014)

Near-IR luminescence in bismuth-doped AgCl crystals

Authors: V. G. Plotnichenko, D. V. Philippovskiy, V. O. Sokolov, V. F. Golovanov, G. V. Polyakova, I. S. Lisitsky, E. M. Dianov

Abstract: Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two exponential components corresponding to the lifetimes of 1.5 and 10.3mks is excited mainly by 0.39--0.44mkm radiation. Computer modeling of probable Bi-related… ▽ More Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two exponential components corresponding to the lifetimes of 1.5 and 10.3mks is excited mainly by 0.39--0.44mkm radiation. Computer modeling of probable Bi-related centers in AgCl lattice is performed. On the basis of experimental and calculation data a conclusion is drawn that the IR luminescence can be caused by Bi^+ ion centers substituted for Ag^+ ions. △ Less

Submitted 2 August, 2013; originally announced August 2013.

Comments: 5 pages, 5 figures

Journal ref: Optics Letters 38, 2965-2968 (2013)

Centers of near-IR luminescence in Bi-doped SiO2 and GeO2: First-principle modeling and experimental data analysis

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO interstitial molecule; interstitial ion, Bi^+, and atom, Bi^0; Bi...Si-Si and Bi...Ge-Ge complexes formed by interstitial Bi atoms and glass intrinsic defects,… ▽ More First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO interstitial molecule; interstitial ion, Bi^+, and atom, Bi^0; Bi...Si-Si and Bi...Ge-Ge complexes formed by interstitial Bi atoms and glass intrinsic defects, Si-Si or Ge-Ge oxygen vacancies; interstitial dimers, Bi0 and Bi_2^-. Experimental data available on bismuth-related IR luminescence in SiO2:Bi and GeO2:Bi glasses, visible (red) luminescence in SiO2:Bi glass and the luminescence excitation are analyzed. Comparison of the calculated spectral properties of the bismuth-related centers with the experimental data shows that IR luminescence in SiO2:Bi and GeO2:Bi is most likely caused by Bi...Si-Si and Bi...Ge-Ge complexes and divalent Bi substitutional center is probably responsible for the red luminescence in SiO2:Bi. △ Less

Submitted 22 May, 2013; v1 submitted 19 May, 2013; originally announced May 2013.

Comments: 12 pages, 7 figures

Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chl… ▽ More A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi. △ Less

Submitted 10 April, 2013; originally announced April 2013.

Comments: 8 pages, 4 figures

Journal ref: V.O.Sokolov, V.G.Plotnichenko, E.M.Dianov, "Centers of near-IR luminescence in bismuth-doped TlCl and CsI crystals," Optics Express 21, 9324--9332 (2013)

Mid-infrared supercontinuum generation in tapered chalcogenide fiber for producing octave-spanning frequency comb around 3 μm

Authors: Alireza Marandi, Charles W. Rudy, Victor G. Plotnichenko, Evgeny M. Dianov, Konstantin L. Vodopyanov, Robert L. Byer

Abstract: We demonstrate mid-infrared (mid-IR) supercontinuum generation (SCG) with instantaneous bandwidth from 2.2 to 5 μm at 40 dB below the peak, covering the wavelength range desirable for molecular spectroscopy and numerous other applications. The SCG occurs in a tapered As2S3 fiber prepared by in-situ tapering and is pumped by femtosecond pulses from the subharmonic of a mode-locked Er-doped fiber la… ▽ More We demonstrate mid-infrared (mid-IR) supercontinuum generation (SCG) with instantaneous bandwidth from 2.2 to 5 μm at 40 dB below the peak, covering the wavelength range desirable for molecular spectroscopy and numerous other applications. The SCG occurs in a tapered As2S3 fiber prepared by in-situ tapering and is pumped by femtosecond pulses from the subharmonic of a mode-locked Er-doped fiber laser. Interference with a narrow linewidth c.w. laser verifies that the coherence properties of the near-IR frequency comb have been preserved through these cascaded nonlinear processes. With this approach stable broad mid-IR frequency combs can be derived from commercially available near-IR frequency combs without an extra stabilization mechanism. △ Less

Submitted 20 August, 2012; originally announced August 2012.

Thermal behavior of NIR active centers in Bi-doped optical fibers

Authors: D. A. Dvoretsky, I. A. Bufetov, V. V. Vel'miskin, A. S. Zlenko, V. F. Khopin, S. L. Semenov, A. N. Guryanov, L. K. Denisov, E. M. Dianov

Abstract: The temperature dependences of optical loss and luminescence spectra have been measured in visible and NIR spectral range for Bi-doped silica and Bi-doped germanosilicate fibers for the first time. The temperature dependence of luminescence lifetime for Si-associated active bismuth centers in germanosilicate fiber was measured. It has been revealed, that distribution of Bi3+ ions across the fiber… ▽ More The temperature dependences of optical loss and luminescence spectra have been measured in visible and NIR spectral range for Bi-doped silica and Bi-doped germanosilicate fibers for the first time. The temperature dependence of luminescence lifetime for Si-associated active bismuth centers in germanosilicate fiber was measured. It has been revealed, that distribution of Bi3+ ions across the fiber preform is essentially different as compared to that of NIR active bismuth centers. Data received indicates that NIR-active centers are associated with the low oxidation state of bismuth ion and/or oxygen deficient center of the glass structure. △ Less

Submitted 27 January, 2012; originally announced January 2012.

Comments: 22 pages, 8 figures

Interstitial BiO molecule as a center of broadband IR luminescence in bismuth-doped silica glass

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: IR luminescence and absorption in bismuth-doped silica glass-core fibers observed recently (see [arXiv:1106.2969v1 [physics.optics]) are argued to be caused by transitions in interstitial BiO molecules IR luminescence and absorption in bismuth-doped silica glass-core fibers observed recently (see [arXiv:1106.2969v1 [physics.optics]) are argued to be caused by transitions in interstitial BiO molecules △ Less

Submitted 22 July, 2011; originally announced July 2011.

Comments: 4 pages, 3 figures, 8 references

Journal ref: V.O.Sokolov, V.G.Plotnichenko, E.M.Dianov, "Interstitial BiO molecule as a broadband IR luminescence centre in bismuth-doped silica glass", Quantum Electron., 2011, 41 (12), 1080-1082

IR Bismuth active centers in optical fibers: Combined excitation-emission spectroscopy

Authors: S. V. Firstov, V. F. Khopin, I. A. Bufetov, E. G. Firstova, A. N. Guryanov, E. M. Dianov

Abstract: 3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and for Bi-doped Al- or P-codoped silica fibers (at room and liquid nitrogen temperatures). The energy level schemes of IR bismuth active centers in pure silica and… ▽ More 3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and for Bi-doped Al- or P-codoped silica fibers (at room and liquid nitrogen temperatures). The energy level schemes of IR bismuth active centers in pure silica and germania core fibers were derived from spectra obtained. The energy level schemes similarity of bismuth active centers in these two types of fibers was revealed. △ Less

Submitted 15 June, 2011; originally announced June 2011.

Comments: 12pages, 7 figures, 5 tables

Journal ref: Firstov S. V., Khopin V. F., Bufetov I. A., Firstova E. G., Guryanov A. N., Dianov E. M. Optics Express, 19, 19551 (2011)

Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data. Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data. △ Less

Submitted 27 July, 2011; v1 submitted 8 June, 2011; originally announced June 2011.

Comments: 9 pages, 8 figures, 50 references

Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals

Authors: V. G. Plotnichenko, V. O. Nazaryants, E. B. Kryukova, V. V. Koltashev, V. O. Sokolov, E. M. Dianov, A. V. Gusev, V. A. Gavva, T. V. Kotereva, M. F. Churbanov

Abstract: Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of… ▽ More Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied. △ Less

Submitted 4 May, 2011; originally announced May 2011.

Journal ref: Applied Optics, Vol. 50, Issue 23, pp. 4633-4641 (2011)

Interstitial bismuth dimers and single atoms as possible centres of broadband near-IR luminescence in bismuth-doped glasses

Authors: V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov

Abstract: Absorption, luminescence and Raman spectra of interstitial bismuth atoms, $\mathrm{Bi}^{0}$, and negatively charged dimers, $\mathrm{Bi}^{2-}$, in alumosilicate, germanosilicate, phosphosilicate and phosphogermanate glasses networks are calculated by time-dependent density functional method. On grounds of this calculation an extension of our previously suggested model of broadband near-IR luminesc… ▽ More Absorption, luminescence and Raman spectra of interstitial bismuth atoms, $\mathrm{Bi}^{0}$, and negatively charged dimers, $\mathrm{Bi}^{2-}$, in alumosilicate, germanosilicate, phosphosilicate and phosphogermanate glasses networks are calculated by time-dependent density functional method. On grounds of this calculation an extension of our previously suggested model of broadband near-IR luminescence in bismuth-doped glasses is put forward. △ Less

Submitted 8 January, 2011; originally announced January 2011.

Comments: 14 pages, 5 figures, 1 table

2.1 um CW Raman Laser in GeO2 Fiber

Authors: B. A. Cumberland, S. V. Popov, J. R. Taylor, O. I. Medvedkov, S. A. Vasiliev, E. M. Dianov

Abstract: We report on 33 % efficient generation of the first Stokes in a high concentration GeO2 fiber Raman laser pumped by a 22 W Thulium doped fiber laser. An output power of 4.6 W at 2.105 um is demonstrated. We report on 33 % efficient generation of the first Stokes in a high concentration GeO2 fiber Raman laser pumped by a 22 W Thulium doped fiber laser. An output power of 4.6 W at 2.105 um is demonstrated. △ Less

Submitted 21 June, 2007; v1 submitted 7 March, 2007; originally announced March 2007.

Comments: 6 pages, 4 figures. Final version in line with published paper. Includes one extra reference, minor changes to text and additional results as a note at the end

Journal ref: Optics Letters, Vol. 32, Issue 13, pp. 1848-1850 (2007)