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Orbital selective switching of ferromagnetism in an oxide quasi two-dimensional electron gas
Authors:
R. Di Capua,
M. Verma,
M. Radovic,
V. N. Strocov,
C. Piamonteze,
E. B. Guedes,
N. Plumb,
Yu Chen,
M. D'Antuono,
G. M. De Luca,
E. Di Gennaro,
D. Stornaiuolo,
D. Preziosi,
B. Jouault,
F. Miletto Granozio,
A. Sambri,
R. Pentcheva,
G. Ghiringhelli,
M. Salluzzo
Abstract:
Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By us…
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Multi-orbital physics in quasi-two-dimensional electron gases (q2DEGs) triggers unique phenomena not observed in bulk materials, such as unconventional superconductivity and magnetism. Here, we investigate the mechanism of orbital selective switching of the spin-polarization in the oxide q2DEG formed at the (001) interface between the LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ band insulators. By using density functional theory calculations, transport, magnetic and x-ray spectroscopy measurements, we find that the filling of titanium-bands with 3d$_{xz,yz}$ orbital character in the EuTiO3 layer and at the interface with SrTiO$_{3}$ induces an antiferromagnetic to ferromagnetic switching of the exchange interaction between Eu-4f$^{7}$ magnetic moments. The results explain the observation of the carrier density dependent ferromagnetic correlations and anomalous Hall effect in this q2DEG, and demonstrate how combined theoretical and experimental approaches can lead to a deeper understanding of novel electronic phases and serve as a guide for the materials design for advanced electronic applications.
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Submitted 13 September, 2021;
originally announced September 2021.
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Multiple-magnon excitations shape the spin spectrum of cuprate parent compounds
Authors:
Davide Betto,
Roberto Fumagalli,
Leonardo Martinelli,
Matteo Rossi,
Riccardo Piombo,
Kazuyoshi Yoshimi,
Daniele Di Castro,
Emiliano Di Gennaro,
Alessia Sambri,
Doug Bonn,
George A. Sawatzky,
Lucio Braicovich,
Nicholas B. Brookes,
Jose Lorenzana,
Giacomo Ghiringhelli
Abstract:
Thanks to high resolution and polarization analysis, resonant inelastic x-ray scattering (RIXS) magnetic spectra of La2CuO4, Sr2CuO2Cl2 and CaCuO2 reveal a rich set of properties of the spin 1/2 antiferromagnetic square lattice of cuprates. The leading single-magnon peak energy dispersion is in excellent agreement with the corresponding inelastic neutron scattering measurements. However, the RIXS…
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Thanks to high resolution and polarization analysis, resonant inelastic x-ray scattering (RIXS) magnetic spectra of La2CuO4, Sr2CuO2Cl2 and CaCuO2 reveal a rich set of properties of the spin 1/2 antiferromagnetic square lattice of cuprates. The leading single-magnon peak energy dispersion is in excellent agreement with the corresponding inelastic neutron scattering measurements. However, the RIXS data unveil an asymmetric lineshape possibly due to odd higher order terms. Moreover, a sharp bimagnon feature emerges from the continuum at (1/2,0), coincident in energy with the bimagnon peak detected in optical spectroscopy. These findings show that the inherently complex spin spectra of cuprates, an exquisite manifestation of quantum magnetism, can be effectively explored by exploiting the richness of RIXS cross sections.
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Submitted 8 February, 2021;
originally announced February 2021.
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Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes
Authors:
Alessia Sambri,
Mario Scuderi,
Anita Guarino,
Emiliano Di Gennaro,
Ricci Erlandsen,
Rasmus T. Dahm,
Anders V. Bjørlig,
Dennis V. Christensen,
Roberto Di Capua,
Bartolomeo Della Ventura,
Umberto Scotti di Uccio,
Salvatore Mirabella,
Giuseppe Nicotra,
Corrado Spinella,
Thomas S. Jespersen,
Fabio Miletto Granozio
Abstract:
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi…
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Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.
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Submitted 17 September, 2020; v1 submitted 15 September, 2020;
originally announced September 2020.
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Large polarons as key quasiparticles in SrTiO3 and SrTiO3-based heterostructures
Authors:
Andrey Geondzhian,
Alessia Sambri,
Gabriella M. De Luca,
Roberto Di Capua,
Emiliano Di Gennaro,
Davide Betto,
Matteo Rossi,
Ying Ying Peng,
Roberto Fumagalli,
Nicholas B. Brookes,
Lucio Braicovich,
Keith Gilmore,
Giacomo Ghiringhelli,
Marco Salluzzo
Abstract:
Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in the nature of the quasiparticles sha** the electronic and conduction properties of STO is needed. We studied the low energy excitations of bulk STO and of the…
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Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in the nature of the quasiparticles sha** the electronic and conduction properties of STO is needed. We studied the low energy excitations of bulk STO and of the LaAlO$_{3}$/SrTiO$_{3}$ two dimensional electron gas (2DEG) by Ti L$_3$ edge resonant inelastic x-ray scattering. In all samples, we find the hallmark of polarons in the form of intense $dd$+phonon excitations, and a decrease of the LO3-mode electron-phonon coupling when going from insulating to highly conducting STO single crystals and heterostructures. Both results are attributed to the dynamic screening of the large polaron self-induced polarization, showing that the low temperature physics of STO and STO-based 2DEGs is dominated by large polaron quasiparticles.
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Submitted 5 May, 2020;
originally announced May 2020.
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Symmetry breaking at the (111) interfaces of SrTiO${_3}$ hosting a 2D-electron system
Authors:
G. M. De Luca,
R. Di Capua,
E. Di Gennaro,
A. Sambri,
F. Miletto Granozio,
G. Ghiringhelli,
D. Betto,
C. Piamonteze,
N. B. Brookes,
M. Salluzzo
Abstract:
We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$…
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We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$${_h}$ crystal field is turned into trigonal D${_3}$${_d}$ crystal field in all cases. The symmetry adapted a${_1}$${_g}$ and e${^π_g}$ orbitals are non-degenerate in energy and their splitting, Δ, is positive at the bare STO surface but negative in the heterostructures, where the a${_1}$${_g}$ orbital is lowest in energy. These results demonstrate that the interfacial symmetry breaking induced by epitaxial engineering of oxide interfaces has a dramatic effect on their electronic properties, and it can be used to manipulate the ground state of the q2DES.
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Submitted 10 September, 2018; v1 submitted 27 June, 2018;
originally announced June 2018.
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Free-space graphene/silicon photodetectors operating at 2 micron
Authors:
M. Casalino,
R. Russo,
C. Russo,
A. Ciajolo,
E. Di Gennaro,
M. Iodice,
G. Coppola
Abstract:
This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device shows a non ideal behaviour with the increasing temperature and the interfacial trap density has been measured as 1.1x10^14 eV^-1cm^-2. Photodetectors are charact…
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This paper presents the design, the fabrication and the characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron and room temperature. The graphene/silicon junction has been carefully: characterized device shows a non ideal behaviour with the increasing temperature and the interfacial trap density has been measured as 1.1x10^14 eV^-1cm^-2. Photodetectors are characterized by an internal (external) responsivity of 10.3 mA/W (0.16 mA/W) in an excellent agreement with the theory. Our devices pave the way for develo** hybrid graphene-Si free-space illuminated PDs operating at 2 micron, for free-space optical communications, optical coherence tomography and light-radars.
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Submitted 15 November, 2017;
originally announced December 2017.
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Non-volatile, reversible metal-insulator transition in oxide interfaces controlled by gate voltage and light
Authors:
Mian Akif Safeen,
Musa Mutlu Can,
Amit Khare,
Emiliano Di Gennaro,
Alessia Sambri,
Antonio Leo,
Nicola. Scopigno,
Umberto Scotti di Uccio,
Fabio Miletto Granozio
Abstract:
The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron…
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The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with crystalline and with amorphous overlayers have been considered. We show that the "naïve" standard scenario, in which the back electrode and the 2-dimensional electron gas are simply modeled as capacitor plates, dramatically fails in describing the observed phenomenology. Anomalies appearing after the first low-temperature application of a positive gate bias, and causing a non-volatile perturbation of sample properties, are observed in all our samples. Such anomalies are shown to drive low-carrier density samples to a persistent insulating state. Recovery of the pristine metallic state can be either obtained by a long room-temperature field annealing, or, instantaneously, by a relatively modest dose of visible-range photons. Illumination causes a sudden collapse of the electron system back to the metallic ground state, with a resistivity drop exceeding four orders of magnitude. The data are discussed and interpreted on the base of the analogy with floating-gate MOSFET devices, which sheds a new light on the effects of back-gating on oxide-based 2-dimensional electron gases. A more formal approach, allowing for a semi-quantitative estimate of the relevant surface carrier densities for different samples and under different back-gate voltages, is proposed in the Appendix.
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Submitted 13 January, 2017;
originally announced January 2017.
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Octahedral rotation patterns in strained EuFeO3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity
Authors:
A. K. Choquette,
C. R. Smith,
R. J. Sichel-Tissot,
E. J. Moon,
M. D. Scafetta,
E. Di Gennaro,
F. Miletto Granozio,
E. Karapetrova,
S. J. May
Abstract:
We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compa…
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We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures.
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Submitted 9 June, 2016;
originally announced June 2016.
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Transport in strongly-coupled graphene-LaAlO3/SrTiO3 hybrid systems
Authors:
I. Aliaj,
I. Torre,
V. Miseikis,
E. di Gennaro,
A. Sambri,
A. Gamucci,
C. Coletti,
F. Beltram,
F. M. Granozio,
M. Polini,
V. Pellegrini,
S. Roddaro
Abstract:
We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed fo…
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We report on the transport properties of hybrid devices obtained by depositing graphene on a LaAlO3/SrTiO3 oxide junction hosting a 4 nm-deep two-dimensional electron system. At low graphene-oxide inter-layer bias the two electron systems are electrically isolated, despite their small spatial separation, and very efficient reciprocal gating is shown. A pronounced rectifying behavior is observed for larger bias values and ascribed to the interplay between electrostatic depletion and tunneling across the LaAlO3 barrier. The relevance of these results in the context of strongly-coupled bilayer systems is discussed.
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Submitted 24 February, 2016;
originally announced February 2016.
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Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces
Authors:
Francesca Telesio,
Luca Pellegrino,
Ilaria Pallecchi,
Daniele Marré,
Emanuela Esposito,
Emiliano di Gennaro,
Amit Khare,
Fabio Miletto Granozio
Abstract:
The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epi…
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The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, the authors propose a procedure to obtain patterns with resolution around 100 nm on (La,Sr)MnO3/LaAlO3/SrTiO3 heterostructures. Our method is based on a multistep technique, which includes wet and dry etching, epitaxial masking, and e-beam lithography. Our procedure is devised to define independent patterns on the interfacial two dimensional electron gas and on the metallic top electrode, while preserving an all-in situ approach for the heterostructure growth. The authors show results on nano-scale devices based on (La,Sr)MnO3/LaAlO3/SrTiO3, suitable for oxide spintronics applications.
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Submitted 12 February, 2016;
originally announced February 2016.
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Photoresponse dynamics in amorphous-LaAlO$_{3}$/SrTiO$_{3}$ interfaces
Authors:
Emiliano Di Gennaro,
Ubaldo Coscia,
Giuseppina Ambrosone,
Amit Khare,
Fabio Miletto Granozio,
Umberto Scotti di Uccio
Abstract:
The time-resolved photoconductance of amorphous and crystalline LaAlO$_3$/SrTiO$_3$ interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet photons. Unlike bare SrTiO$_3$ single crystals, showing relatively small photoconductance effects, both kinds of interfaces exhibit an intense and highly persistent p…
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The time-resolved photoconductance of amorphous and crystalline LaAlO$_3$/SrTiO$_3$ interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet photons. Unlike bare SrTiO$_3$ single crystals, showing relatively small photoconductance effects, both kinds of interfaces exhibit an intense and highly persistent photoconductance with extraordinarily long characteristic times. The temporal behaviour of the extra photoinduced conductance persisting after light irradiation shows a complex dependence on interface type (whether amorphous or crystalline), sample history and irradiation wavelength. \textcolor{black}{The experimental results indicate that different mechanisms of photoexcitation are responsible for the photoconductance of crystalline and amorphous LaAlO$_3$/SrTiO$_3$ interfaces under visible light. We propose that the response of crystalline samples is mainly due to the promotion of electrons from the valence bands of both SrTiO$_3$ and LaAlO$_3$. This second channel is less relevant in amorphous LaAlO$_3$/SrTiO$_3$, where the higher density of point defects plays instead a major role.
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Submitted 14 January, 2015;
originally announced January 2015.
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Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure
Authors:
S. Zhou,
S. Kim,
E. Di Gennaro,
Y. Hu,
C. Gong,
X. Lu,
C. Berger,
W. de Heer,
E. Riedo,
Y. J. Chabal,
C. Aruta,
A. Bongiorno
Abstract:
Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer stru…
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Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of intercalated water, and unexpectedly large interlayer separations of about 9.35 Å. Density functional theory calculations show that the apparent contradiction of "little water but large interlayer spacing in the graphene oxide films" can be explained by considering a multilayer film formed by carbon layers presenting, at the nanoscale, a non-homogenous oxidation, where non-oxidized and highly oxidized nano-domains coexist and where a few water molecules trapped between oxidized regions of the stacked layers are sufficient to account for the observed large inter-layer separations. This work sheds light on both the vertical and intra-layer structure of graphene oxide films grown on silicon carbide, and more in general, it provides novel insight on the relationship between inter-layer spacing, water content, and structure of graphene/graphite oxide materials.
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Submitted 18 March, 2014;
originally announced March 2014.
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Growth and characterization of conducting LaAlO3/EuTiO3/SrTiO3 het-erostructures
Authors:
G. M. De Luca,
R. Di Capua,
E. Di Gennaro,
F. Miletto Granozio,
M. Salluzzo,
A. Gadaleta,
I. Pallecchi,
D. Marrè,
C. Piamonteze,
M. Radovic,
Z. Ristic,
S. Rusponi
Abstract:
We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the orderi…
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We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the ordering of Eu2+ spins, even in samples characterized by just two EuTiO3 unit cells. A finite metallic conductivity is observed only in the case of samples composed by one or two EuTiO3 unit cells and, simultaneously, by a LaAlO3 thickness equal or above 4 unit cells. The role of ferromagnetic EuTiO3 on the transport properties of delta-doped LaAlO3/EuTiO3/SrTiO3 is critically discussed.
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Submitted 1 March, 2014;
originally announced March 2014.
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Observation of strontium segregation in LaAlO$_{3}$/SrTiO$_{3}$ and NdGaO$_{3}$/SrTiO$_{3}$ oxide heterostructures by X-ray photoemission spectroscopy
Authors:
Uwe Treske,
Nadine Heming,
Stefan Krause,
Martin Knupfer,
Bernd Büchner,
Emiliano Di Gennaro,
Umberto Scotti di Uccio,
Fabio Miletto Granozio,
Andreas Koitzsch
Abstract:
LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line sh…
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LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.
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Submitted 31 January, 2014;
originally announced January 2014.
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Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface
Authors:
C. Barone,
F. Romeo,
S. Pagano,
E. Di Gennaro,
F. Miletto Granozio,
I. Pallecchi,
D. Marre,
U. Scotti di Uccio
Abstract:
The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuation…
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The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trap** mechanism of the 2-dimensional electron gas.
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Submitted 8 December, 2013;
originally announced December 2013.
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Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces
Authors:
Emiliano Di Gennaro,
Umberto Scotti di Uccio,
Carmela Aruta,
Claudia Cantoni,
Alessandro Gadaleta,
Andrew R. Lupini,
Davide Maccariello,
Daniele Marré,
Ilaria Pallecchi,
Domenico Paparo,
Paolo Perna,
Muhammad Riaz,
Fabio Miletto Granozio
Abstract:
We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface st…
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We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion.
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Submitted 22 February, 2014; v1 submitted 12 September, 2013;
originally announced September 2013.
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Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface
Authors:
Umberto Scotti di Uccio,
Carmela Aruta,
Claudia Cantoni,
Emiliano Di Gennaro,
Alessandro Gadaleta,
Andrew R. Lupini,
Davide Maccariello,
Daniele Marré,
Ilaria Pallecchi,
Domenico Paparo,
Paolo Perna,
Muhammad Riaz,
Fabio Miletto Granozio
Abstract:
The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrT…
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The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed.
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Submitted 22 June, 2012;
originally announced June 2012.
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Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure
Authors:
Carmela Aruta,
Salvarore Amoruso,
Giovanni Ausanio,
Riccardo Bruzzese,
Emiliano Di Gennaro,
Marco Lanzano,
Fabio Miletto Granozio,
Muhammad Riaz,
Alessia Sambri,
Umberto Scotti di Uccio,
Xuan Wang
Abstract:
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the inte…
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We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.
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Submitted 6 April, 2012; v1 submitted 2 January, 2012;
originally announced January 2012.
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Isotropic properties of the photonic band gap in quasicrystals with low-index contrast
Authors:
Priya Rose,
E. Di Gennaro,
G. Abbate,
A. Andreone
Abstract:
We report on the formation and development of the photonic band gap in two-dimensional 8-, 10- and 12-fold symmetry quasicrystalline lattices of low index contrast. Finite size structures made of dielectric cylindrical rods were studied and measured in the microwave region, and their properties compared with a conventional hexagonal crystal. Band gap characteristics were investigated by changing t…
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We report on the formation and development of the photonic band gap in two-dimensional 8-, 10- and 12-fold symmetry quasicrystalline lattices of low index contrast. Finite size structures made of dielectric cylindrical rods were studied and measured in the microwave region, and their properties compared with a conventional hexagonal crystal. Band gap characteristics were investigated by changing the direction of propagation of the incident beam inside the crystal. Various angles of incidence from 0 \degree to 30\degree were used in order to investigate the isotropic nature of the band gap. The arbitrarily high rotational symmetry of aperiodically ordered structures could be practically exploited to manufacture isotropic band gap materials, which are perfectly suitable for hosting waveguides or cavities.
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Submitted 26 February, 2011;
originally announced February 2011.
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Experimental evidence of cut-wire-induced enhanced transmission of transverse-electric fields through sub-wavelength slits in a thin metallic screen
Authors:
Emiliano Di Gennaro,
Ilaria Gallina,
Antonello Andreone,
Giuseppe Castaldi,
Vincenzo Galdi
Abstract:
Recent numerical studies have demonstrated the possibility of achieving substantial enhancements in the transmission of transverse-electric-polarized electromagnetic fields through subwavelength slits in a thin metallic screen by placing single or paired metallic cut-wire arrays at a close distance from the screen. In this Letter, we report on the first experimental evidence of such extraordinary…
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Recent numerical studies have demonstrated the possibility of achieving substantial enhancements in the transmission of transverse-electric-polarized electromagnetic fields through subwavelength slits in a thin metallic screen by placing single or paired metallic cut-wire arrays at a close distance from the screen. In this Letter, we report on the first experimental evidence of such extraordinary transmission phenomena, via microwave (X/Ku-band) measurements on printed-circuit-board prototypes. Experimental results agree very well with full-wave numerical predictions, and indicate an intrinsic robustness of the enhanced transmission phenomena with respect to fabrication tolerances and experimental imperfections.
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Submitted 28 October, 2010; v1 submitted 26 August, 2010;
originally announced August 2010.
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Paired cut-wire arrays for enhanced transmission of transverse-electric fields through sub-wavelength slits in a thin metallic screen
Authors:
Ilaria Gallina,
Giuseppe Castaldi,
Vincenzo Galdi,
Emiliano Di Gennaro,
Antonello Andreone
Abstract:
It has recently been shown that the transmission of electromagnetic fields through sub-wavelength slits (parallel to the electric field direction) in a thin metallic screen can be greatly enhanced by covering one side of the screen with a metallic cut-wire array laid on a dielectric layer. In this Letter, we show that a richer phenomenology (which involves both electric- and magnetic-type resonanc…
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It has recently been shown that the transmission of electromagnetic fields through sub-wavelength slits (parallel to the electric field direction) in a thin metallic screen can be greatly enhanced by covering one side of the screen with a metallic cut-wire array laid on a dielectric layer. In this Letter, we show that a richer phenomenology (which involves both electric- and magnetic-type resonances) can be attained by pairing a second cut-wire array at the other side of the screen. Via a full-wave comprehensive parametric study, we illustrate the underlying mechanisms and explore the additional degrees of freedom endowed, as well as their possible implications in the engineering of enhanced transmission phenomena.
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Submitted 18 June, 2010; v1 submitted 21 December, 2009;
originally announced December 2009.
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Hybrid photonic-bandgap accelerating cavities
Authors:
E. Di Gennaro,
C. Zannini,
S. Savo,
A. Andreone,
M. R. Masullo,
G. Castaldi,
I. Gallina,
V. Galdi
Abstract:
In a recent investigation, we studied two-dimensional point-defected photonic bandgap cavities composed of dielectric rods arranged according to various representative periodic and aperiodic lattices, with special emphasis on possible applications to particle acceleration (along the longitudinal axis). In this paper, we present a new study aimed at highlighting the possible advantages of using h…
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In a recent investigation, we studied two-dimensional point-defected photonic bandgap cavities composed of dielectric rods arranged according to various representative periodic and aperiodic lattices, with special emphasis on possible applications to particle acceleration (along the longitudinal axis). In this paper, we present a new study aimed at highlighting the possible advantages of using hybrid structures based on the above dielectric configurations, but featuring metallic rods in the outermost regions, for the design of extremely-high quality factor, bandgap-based, accelerating resonators. In this framework, we consider diverse configurations, with different (periodic and aperiodic) lattice geometries, sizes, and dielectric/metal fractions. Moreover, we also explore possible improvements attainable via the use of superconducting plates to confine the electromagnetic field in the longitudinal direction. Results from our comparative studies, based on numerical full-wave simulations backed by experimental validations (at room and cryogenic temperatures) in the microwave region, identify the candidate parametric configurations capable of yielding the highest quality factor.
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Submitted 2 October, 2009; v1 submitted 3 August, 2009;
originally announced August 2009.
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Bandgap properties of low index contrast aperiodically ordered photonic quasicrystals
Authors:
Gianluigi Zito,
T. Priya Rose,
Emiliano Di Gennaro,
Antonello Andreone,
Enrico Santamato,
Giancarlo Abbate
Abstract:
We numerically analyze, using Finite Difference Time Domain simulations, the bandgap properties of photonic quasicrystals with a low index contrast. We compared 8-, 10- and 12-fold symmetry aperiodically ordered lattices with different spatial tiling. Our results show that tiling design, more than symmetry, determines the transmission properties of these structures.
We numerically analyze, using Finite Difference Time Domain simulations, the bandgap properties of photonic quasicrystals with a low index contrast. We compared 8-, 10- and 12-fold symmetry aperiodically ordered lattices with different spatial tiling. Our results show that tiling design, more than symmetry, determines the transmission properties of these structures.
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Submitted 22 July, 2009;
originally announced July 2009.
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Superlensing properties of one-dimensional dielectric photonic crystals
Authors:
Salvatore Savo,
Emiliano Di Gennaro,
Antonello Andreone
Abstract:
We present the experimental observation of the superlensing effect in a slab of a one-dimensional photonic crystal made of tilted dielectric elements. We show that this flat lens can achieve subwavelength resolution in different frequency bands. We also demonstrate that the introduction of a proper corrugation on the lens surface can dramatically improve both the transmission and the resolution…
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We present the experimental observation of the superlensing effect in a slab of a one-dimensional photonic crystal made of tilted dielectric elements. We show that this flat lens can achieve subwavelength resolution in different frequency bands. We also demonstrate that the introduction of a proper corrugation on the lens surface can dramatically improve both the transmission and the resolution of the imaged signal.
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Submitted 22 July, 2009;
originally announced July 2009.
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Mode Confinement in Photonic Quasi-Crystal Point-Defect Cavities for Particle Accelerators
Authors:
E. Di Gennaro,
S. Savo,
A. Andreone,
V. Galdi,
G. Castaldi,
V Pierro,
M. R. Masullo
Abstract:
In this Letter, we present a study of the confinement properties of point-defect resonators in finite-size photonic-bandgap structures composed of aperiodic arrangements of dielectric rods, with special emphasis on their use for the design of cavities for particle accelerators. Specifically, for representative geometries, we study the properties of the fundamental mode (as a function of the fill…
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In this Letter, we present a study of the confinement properties of point-defect resonators in finite-size photonic-bandgap structures composed of aperiodic arrangements of dielectric rods, with special emphasis on their use for the design of cavities for particle accelerators. Specifically, for representative geometries, we study the properties of the fundamental mode (as a function of the filling fraction, structure size, and losses) via 2-D and 3-D full-wave numerical simulations, as well as microwave measurements at room temperature. Results indicate that, for reduced-size structures, aperiodic geometries exhibit superior confinement properties by comparison with periodic ones.
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Submitted 29 September, 2008;
originally announced September 2008.
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Pendellosung effect in photonic crystals
Authors:
S. Savo,
E. Di Gennaro,
C. Miletto,
A. Andreone,
P. Dardano,
L. Moretti,
V. Mocella
Abstract:
At the exit surface of a photonic crystal, the intensity of the diffracted wave can be periodically modulated, showing a maximum in the "positive" (forward diffracted) or in the "negative" (diffracted) direction, depending on the slab thickness. This thickness dependence is a direct result of the so-called Pendellosung phenomenon, consisting of the periodic exchange inside the crystal of the ene…
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At the exit surface of a photonic crystal, the intensity of the diffracted wave can be periodically modulated, showing a maximum in the "positive" (forward diffracted) or in the "negative" (diffracted) direction, depending on the slab thickness. This thickness dependence is a direct result of the so-called Pendellosung phenomenon, consisting of the periodic exchange inside the crystal of the energy between direct and diffracted beams. We report the experimental observation of this effect in the microwave region at about 14 GHz by irradiating 2D photonic crystal slabs of different thickness and detecting the intensity distribution of the electromagnetic field at the exit surface and inside the crystal itself.
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Submitted 10 April, 2008;
originally announced April 2008.
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Evidence of local effects in anomalous refraction and focusing properties of dodecagonal photonic quasicrystals
Authors:
Emiliano Di Gennaro,
Carlo Miletto,
Salvatore Savo,
Antonello Andreone,
Davide Morello,
Vincenzo Galdi,
Giuseppe Castaldi,
Vincenzo Pierro
Abstract:
We present the key results from a comprehensive study of the refraction and focusing properties of a two-dimensional dodecagonal photonic ``quasicrystal'' (PQC), carried out via both full-wave numerical simulations and microwave measurements on a slab made of alumina rods inserted in a parallel-plate waveguide. We observe anomalous refraction and focusing in several frequency regions, confirming…
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We present the key results from a comprehensive study of the refraction and focusing properties of a two-dimensional dodecagonal photonic ``quasicrystal'' (PQC), carried out via both full-wave numerical simulations and microwave measurements on a slab made of alumina rods inserted in a parallel-plate waveguide. We observe anomalous refraction and focusing in several frequency regions, confirming some recently published results. However, our interpretation, based on numerical and experimental evidence, differs substantially from the one in terms of ``effective negative refractive-index'' that was originally proposed. Instead, our study highlights the critical role played by short-range interactions associated with local order and symmetry.
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Submitted 11 April, 2008; v1 submitted 10 April, 2008;
originally announced April 2008.
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A parametric study of the lensing properties of dodecagonal photonic quasicrystals
Authors:
E. Di Gennaro,
D. Morello,
C. Miletto,
S. Savo,
A. Andreone,
G. Castaldi,
V. Galdi,
V. Pierro
Abstract:
We present a study of the lensing properties of two-dimensional (2-D) photonic quasicrystal (PQC) slabs made of dielectric cylinders arranged according to a 12-fold-symmetric square-triangle aperiodic tiling. Our full-wave numerical analysis confirms the results recently emerged in the technical literature and, in particular, the possibility of achieving focusing effects within several frequency…
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We present a study of the lensing properties of two-dimensional (2-D) photonic quasicrystal (PQC) slabs made of dielectric cylinders arranged according to a 12-fold-symmetric square-triangle aperiodic tiling. Our full-wave numerical analysis confirms the results recently emerged in the technical literature and, in particular, the possibility of achieving focusing effects within several frequency regions. However, contrary to the original interpretation, such focusing effects turn out to be critically associated to local symmetry points in the PQC slab, and strongly dependent on its thickness and termination. Nevertheless, our study reveals the presence of some peculiar properties, like the ability to focus the light even for slabs with a reduced lateral width, or beaming effects, which render PQC slabs potentially interesting and worth of deeper investigation. Key words: Photonic quasicrystals; negative refraction; superlensing.
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Submitted 5 December, 2007; v1 submitted 27 November, 2007;
originally announced November 2007.
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Linear and nonlinear electrodynamic response of bulk CaC6 in the microwave regime
Authors:
A. Andreone,
G. Cifariello,
E. Di Gennaro,
G. Lamura,
N. Emery,
C. Herold,
J. F. Mareche,
P. Lagrange
Abstract:
The linear and nonlinear response to a microwave electromagnetic field of two c-axis oriented polycrystalline samples of the newly discovered superconductor CaC6 (Tc = 11.5 K) is studied in the superconducting state down to 2 K. The surface resistance Rs and the third order intermodulation distortion, arising from a two-tone excitation, have been measured as a function of temperature and microwa…
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The linear and nonlinear response to a microwave electromagnetic field of two c-axis oriented polycrystalline samples of the newly discovered superconductor CaC6 (Tc = 11.5 K) is studied in the superconducting state down to 2 K. The surface resistance Rs and the third order intermodulation distortion, arising from a two-tone excitation, have been measured as a function of temperature and microwave circulating power. Experiments are carried out using a dielectrically loaded copper cavity operating at 7 GHz in a "hot finger" configuration. The results confirm recent experimental findings that CaC6 behaves as a weakly-coupled, fully gapped, superconductor. The weak power dependence of Rs encourages a further investigation of this novel superconductor as a possible alternative to Nb in specific microwave applications.
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Submitted 18 October, 2006;
originally announced October 2006.
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Microwave losses of bulk CaC6
Authors:
G. Cifariello,
E. Di Gennaro,
G. Lamura,
A. Andreone,
N. Emery,
C. Herold,
J. F. Mareche,
P. Lagrange
Abstract:
We report a study of the temperature dependence of the surface resistance RS in the graphite intercalated compound (GIC) CaC6, where superconductivity at 11.5 K was recently discovered. Experiments are carried out using a copper dielectrically loaded cavity operating at 7 GHz in a "hot finger" configuration. Bulk CaC6 samples have been synthesized from highly oriented pyrolytic graphite. Microwa…
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We report a study of the temperature dependence of the surface resistance RS in the graphite intercalated compound (GIC) CaC6, where superconductivity at 11.5 K was recently discovered. Experiments are carried out using a copper dielectrically loaded cavity operating at 7 GHz in a "hot finger" configuration. Bulk CaC6 samples have been synthesized from highly oriented pyrolytic graphite. Microwave data allows to extract unique information on the quasiparticle density and on the nature of pairing in superconductors. The analysis of RS(T) confirms our recent experimental findings that CaC6 behaves as a weakly-coupled, fully gapped, superconductor.
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Submitted 23 June, 2006;
originally announced June 2006.
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Microwave Harmonic Emission in MgB2 Superconductor: Comparison with YBaCuO
Authors:
A. Agliolo Gallitto,
G. Bonsignore,
E. Di Gennaro,
G. Giunchi,
M. Li Vigni,
P. Manfrinetti
Abstract:
We report results of microwave second-harmonic generation in ceramic samples of MgB2, prepared by different methods. The SH signal has been investigated as a function of the temperature and the static magnetic field. The results are discussed in the framework of models reported in the literature. We show that the peculiarities of the SH signal are related to the specific properties of the sample…
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We report results of microwave second-harmonic generation in ceramic samples of MgB2, prepared by different methods. The SH signal has been investigated as a function of the temperature and the static magnetic field. The results are discussed in the framework of models reported in the literature. We show that the peculiarities of the SH signal are related to the specific properties of the sample. A comparison with the results obtained in ceramic and crystalline YBa(2)Cu(3)O(7) shows that the second-harmonic emission in MgB2 is weaker than that observed in ceramic YBa(2)Cu(3)O(7).
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Submitted 24 March, 2006;
originally announced March 2006.
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Critical-state effects on microwave losses in type-II superconductors
Authors:
M. Bonura,
E. Di Gennaro,
A. Agliolo Gallitto,
M. Li Vigni
Abstract:
We discuss the microwave energy losses in superconductors in the critical state. The field-induced variations of the surface resistance are determined, in the framework of the Coffey and Clem model, by taking into account the distribution of the vortex magnetic field inside the sample. It is shown that the effects of the critical state cannot generally be disregarded to account for the experimen…
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We discuss the microwave energy losses in superconductors in the critical state. The field-induced variations of the surface resistance are determined, in the framework of the Coffey and Clem model, by taking into account the distribution of the vortex magnetic field inside the sample. It is shown that the effects of the critical state cannot generally be disregarded to account for the experimental data. Results obtained in bulk niobium at low temperatures are quantitatively justified.
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Submitted 28 July, 2006; v1 submitted 24 March, 2006;
originally announced March 2006.
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Intrinsic nonlinearity probed by intermodulation distortion microwave measurements on high quality MgB2 thin films
Authors:
G. Cifariello,
M. Aurino,
E. Di Gennaro,
G. Lamura,
A. Andreone,
P. Orgiani,
X. X. Xi,
J. -C. Villegier
Abstract:
The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41…
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The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41 K, very low resistivity values, and residual resistivity ratio larger than 10, are shown. The dependence of the nonlinear surface losses and of the third order intermodulation products on the power feeding the cavity and on the temperature is analyzed. At low power, the signal arising from distortion versus temperature shows the intrinsic s-wave behavior expected for this compound. Data are compared with measurements performed on Nb and YBCO thin films using the same technique.
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Submitted 14 February, 2006;
originally announced February 2006.
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Experimental evidence of s-wave superconductivity in bulk CaC$_{6}$
Authors:
G. Lamura,
M. Aurino,
G. Cifariello,
E. Di Gennaro,
A. Andreone,
N. Emery,
C. Herold,
J. -F. Mareche,
P. Lagrange
Abstract:
The temperature dependence of the in-plane magnetic penetration depth, $λ_{ab}(T)$, has been measured in a c-axis oriented polycrystalline CaC$_{6}$ bulk sample using a high-resolution mutual inductance technique. A clear exponential behavior of $λ_{ab}(T)$ has been observed at low temperatures, strongly suggesting isotropic s-wave pairing. Data fit using the standard BCS theory yields…
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The temperature dependence of the in-plane magnetic penetration depth, $λ_{ab}(T)$, has been measured in a c-axis oriented polycrystalline CaC$_{6}$ bulk sample using a high-resolution mutual inductance technique. A clear exponential behavior of $λ_{ab}(T)$ has been observed at low temperatures, strongly suggesting isotropic s-wave pairing. Data fit using the standard BCS theory yields $λ_{ab}(0)=(720\pm 80)$ Angstroem and $Δ(0)=(1.79\pm 0.08)$ meV. The ratio $2Δ(0)/k_{_B}T_{c}=(3.6\pm 0.2)$ gives indication for a conventional weakly coupled superconductor.
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Submitted 16 January, 2006;
originally announced January 2006.
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Discrete model analysis of the critical current density measurements in superconducting thin films by a single coil inductive method
Authors:
M. Aurino,
E. Di Gennaro,
F. Di Iorio,
A. Gauzzi,
G. Lamura,
A. Andreone
Abstract:
The critical current density of a superconducting film can be easily determined by an inductive and contactless method. Driving a sinusoidal current in a single coil placed in front of a superconducting sample, a non zero third harmonic voltage V_3 is induced in it when the sample goes beyond the Bean critical state. The onset of V_3 marks the value of current beyond which the sample response to…
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The critical current density of a superconducting film can be easily determined by an inductive and contactless method. Driving a sinusoidal current in a single coil placed in front of a superconducting sample, a non zero third harmonic voltage V_3 is induced in it when the sample goes beyond the Bean critical state. The onset of V_3 marks the value of current beyond which the sample response to the magnetic induction is no more linear. To take into account, in a realistic way, the magnetic coupling between the film and the coil we have developed a discrete model of the inducing and induced currents distribution. In the framework of this model the magnetic field profile on the sample surface and the coefficient linking the current flowing in the coil and the critical current density J_C of superconducting thin films is evaluated. The numerical results are checked measuring J_C of several thin films of YBa_2Cu_3O_(7-d) of known superconducting properties, used as a control material.
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Submitted 21 November, 2005;
originally announced November 2005.
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Microwave intermodulation distortion of MgB2 thin films
Authors:
G. Lamura,
A. J. Purnell,
L. F. Cohen,
A. Andreone,
F. Chiarella,
E. Di Gennaro,
R. Vaglio,
L. Hao,
J. Gallop
Abstract:
The two tone intermodulation arising in MgB2 thin films deposited in-situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterised using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behaviour can be un…
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The two tone intermodulation arising in MgB2 thin films deposited in-situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterised using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behaviour can be understood introducing a mechanism of vortex penetration in grain boundaries as the most plausible source of non linearities in these films. This assumption is confirmed by the analysis of the field dependence of the surface resistance, that show a linear behaviour at all temperatures under test.
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Submitted 9 May, 2003; v1 submitted 8 May, 2003;
originally announced May 2003.
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Electrodynamic response of MgB2 sintered pellets and thin films
Authors:
A. Andreone,
G. Ausanio,
E. Di Gennaro,
G. Lamura,
M. Salluzzo,
J. Le Cochec,
A. Gauzzi,
C. Cantoni,
M. Paranthaman,
G. Giunchi,
S. Ceresara
Abstract:
We present a study of the electrodynamic response of MgB2 pellets and thin film samples exhibiting critical temperatures ranging between 26 and 38 K. We have performed accurate measurements of the surface impedance ZS =RS+iXS as a function of the temperature and of the magnitude of the electromagnetic field. The temperature variation and the field dependence of ZS was measured by a dielectric re…
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We present a study of the electrodynamic response of MgB2 pellets and thin film samples exhibiting critical temperatures ranging between 26 and 38 K. We have performed accurate measurements of the surface impedance ZS =RS+iXS as a function of the temperature and of the magnitude of the electromagnetic field. The temperature variation and the field dependence of ZS was measured by a dielectric resonator cavity technique in the microwave region. In particular, the temperature variation of the magnetic penetration depth was also determined in the RF region by a single coil mutual inductance method. In the case of the films, for T<TC/2 a clear exponential behavior of the penetration depth is observed, which can be explained by a simple BCS s-wave model with a reduced value of the energy gap. On the contrary, pellets show no evidence of saturation, and the experimental results strictly follow a quadratic dependence down to the lowest temperatures. This behavior can be induced by the presence of metallic Mg inclusions that may locally depress the gap. The analysis of the field dependence of the surface impedance in the microwave region confirms that the electrodynamic response of MgB2 is dominated by different sources of dissipation, depending on the sample history, likely to be ascribed to the predominance of grain boundaries or normal regions on its surface.
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Submitted 31 October, 2001;
originally announced October 2001.
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Study of the microwave electrodynamic response of MgB2 thin films
Authors:
A. Andreone,
A. Cassinese,
C. Cantoni,
E. Di Gennaro,
G. Lamura,
M. G. Maglione,
M. Paranthaman,
M. Salluzzo,
R. Vaglio
Abstract:
We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering t…
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We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex-situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 C. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power, likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples.
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Submitted 27 September, 2001; v1 submitted 25 September, 2001;
originally announced September 2001.
