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Gas dependent hysteresis in MoS$_2$ field effect transistors
Authors:
F. Urban,
F. Giubileo,
A. Grillo,
L. Iemmo,
G. Luongo,
M. Passacantando,
T. Foller,
L. Madauß,
E. Pollmann,
M. P. Geller,
D. Oing,
M. Schleberger,
A. Di Bartolomeo
Abstract:
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although…
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We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.
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Submitted 27 June, 2023;
originally announced June 2023.
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Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation
Authors:
Stephan Sleziona,
Aniello Pelella,
Enver Faella,
Osamah Kharsah,
Lucia Skopinski,
Andre Maas,
Yossarian Liebsch,
Antonio Di Bartolomeo,
Marika Schleberger
Abstract:
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trap** due to adsorbates, or defects either in the MoS$_2$ lattice or in the underlying substrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Si substrates, irradia…
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Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trap** due to adsorbates, or defects either in the MoS$_2$ lattice or in the underlying substrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Si substrates, irradiated these devices with Xe$^{30+}$ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: While the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude, likely due to the occurence of hop** transport via localized states. We also find a significantly reduced $n$-do** ($\approx$ 10$^{12}$ per cm$^{2}$) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS$_2$ field-effect transistor as a memory device with remarkably longer relaxation times ($\approx$ minutes) compared to previous works.
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Submitted 7 June, 2023;
originally announced June 2023.
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Memory effects in black phosphorus field effect transistors
Authors:
Alessandro Grillo,
Aniello Pelella,
Enver Faella,
Filippo Giubileo,
Stephan Sleziona,
Osamah Kharsah,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with e…
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We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.
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Submitted 15 October, 2021;
originally announced October 2021.
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Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Authors:
Alessandro Grillo,
Enver Faella,
Aniello Pelella,
Filippo Giubileo,
Lida Ansari,
Farzan Gity,
Paul K. Hurley,
Niall McEvoy,
Antonio Di Bartolomeo
Abstract:
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by enviro…
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Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is rised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe_2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe_2 film provides an effective route for modulating the density of carriers and the optical properties of the material.
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Submitted 20 July, 2021;
originally announced July 2021.
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Graphene-silicon device for visible and infrared photodetection
Authors:
Aniello Pelella,
Alessandro Grillo,
Enver Faella,
Giuseppe Luongo,
Mohammad Bagher Askari,
Antonio Di Bartolomeo
Abstract:
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of…
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The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of a $Gr-Si_3N_4-Si$ structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to $10^4$. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, $φ_{b0}=0.24 eV$, the effective Richardson's constant, $A^*=7 \cdot 10^{-10} AK^{-2}cm^{-2}$, and the diode ideality factor n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction. the other for the $Gr-Si_3N_4-Si$ MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
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Submitted 20 May, 2021;
originally announced May 2021.
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A current-voltage model for double Schottky barrier devices
Authors:
Alessandro Grillo,
Antonio Di Bartolomeo
Abstract:
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misun…
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Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misunderstood. In this work, we propose a single equation to describe the current-voltage characteristics of two-terminal semiconductor devices with Schottky contacts. We apply the equation to numerically simulate the electrical behaviour for both ideal and non-ideal Schottky barriers. The proposed model can be used to directly estimate the Schottky barrier height and the ideality factor. We apply it to perfectly reproduce the experimental current-voltage characteristics of ultrathin molybdenum disulphide or tungsten diselenide nanosheets and tungsten disulphide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two-terminal device with Schottky contacts.
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Submitted 13 December, 2020;
originally announced December 2020.
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Gate-controlled field emission current from MoS$_2$ nanosheets
Authors:
Aniello Pelella,
Alessandro Grillo,
Francesca Urban,
Filippo Giubileo,
Maurizio Passacantando,
Erik Pollmann,
Stephan Sleziona,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurem…
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Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.
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Submitted 22 August, 2020;
originally announced August 2020.
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Field emission from AlGaN nanowires with low turn-on field
Authors:
Filippo Giubileo,
Antonio Di Bartolomeo,
Yun Zhong,
Songrui Zhao,
Maurizio Passacantando
Abstract:
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are anal…
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We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are analyzed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as $β$ = 556 and a minimum turn-on field $E_{turn-on}$ = 17 V/$μ$m for a cathode-anode separation distance d = 500 nm. We show that for increasing separation distance, $E_{turn-on}$ increases up to about 35 V/$μ$m and $β$ decreases to 100 at d = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters.
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Submitted 7 August, 2020;
originally announced August 2020.
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Isotropic conduction and negative photoconduction in ultrathin PtSe$_2$ films
Authors:
Francesca Urban,
Farzan Gity,
Paul K. Hurley,
Niall McEvoy,
Antonio Di Bartolomeo
Abstract:
PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electri…
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PtSe$_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe$_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe$_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO$_2$ and at the Si/SiO$_2$ interface.
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Submitted 11 July, 2020;
originally announced July 2020.
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Field emission from two-dimensional GeAs
Authors:
Antonio Di Bartolomeo,
Alessandro Grillo,
Filippo Giubileo,
Luca Camilli,
Jianbo Sun,
Daniele Capista,
Maurizio Passacantando
Abstract:
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron…
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GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/μm and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility.
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Submitted 11 July, 2020;
originally announced July 2020.
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Vacuum gauge from ultrathin MoS2 transistor
Authors:
A. Di Bartolomeo,
A. Pelella,
A. Grillo,
F. Urban,
L. Iemmo,
E. Faella,
N. Martucciello,
F. Giubileo
Abstract:
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-…
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We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-do** of the MoS2 channel.
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Submitted 8 June, 2020;
originally announced June 2020.
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Field emission characteristics of InSb patterned nanowires
Authors:
Filippo Giubileo,
Maurizio Passacantando,
Francesca Urban,
Alessandro Grillo,
Laura Iemmo,
Aniello Pelella,
Curtis Goosney,
Ray LaPierre,
Antonio Di Bartolomeo
Abstract:
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracte…
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InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.
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Submitted 28 April, 2020;
originally announced April 2020.
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Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
Authors:
A. Pelella,
O. Kharsah,
A. Grillo,
F. Urban,
M. Passacantando,
F. Giubileo,
L. Iemmo,
S. Sleziona,
E. Pollmann,
L. Madauß,
M. Schleberger,
A. Di Bartolomeo
Abstract:
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H…
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This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Electron irradiation on multilayer PdSe$_2$ field effect transistors
Authors:
A. Di Bartolomeo,
F. Urban,
A. Pelella,
A. Grillo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drai…
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Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trap** in slow trap states at the Si/SiO_2 interface.
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Submitted 22 February, 2020;
originally announced February 2020.
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Field emission in ultrathin PdSe2 back-gated transistors
Authors:
A. Di Bartolomeo,
A. Pelella,
F. Urban,
A. Grillo,
L. Iemmo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In th…
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We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.
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Submitted 13 February, 2020;
originally announced February 2020.
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Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
Authors:
Francesca Urban,
Grzegorz Lupina,
Alessandro Grillo,
Nadia Martucciello,
Antonio Di Bartolomeo
Abstract:
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channe…
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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of the gate-voltage dependence of the carrier mobility. We find that the gate voltage modulates the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that the raising temperature lowers the carrier mobility, has negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance an be achieved by the zig-zag sha** of the Ni contact.
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Submitted 10 December, 2019;
originally announced December 2019.
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Field Emission Characterization of MoS2 Nanoflowers
Authors:
Filippo Giubileo,
Alessandro Grillo,
Maurizio Passacantando,
Francesca Urban,
Laura Iemmo,
Giuseppe Luongo,
Aniello Pelella,
Melanie Loveridge,
Luca Lozzi,
Antonio Di Bartolomeo
Abstract:
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down…
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Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.
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Submitted 18 June, 2019;
originally announced June 2019.
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Multi-walled carbon nanotube films for the measurement of the alcoholic concentration
Authors:
C. Giordano,
G. Filatrella,
Maria Sarno,
A. Di Bartolomeo
Abstract:
We show that a multi-walled carbon nanotube film can be used as the sensing element of a low-cost sensor for the alcoholic concentration in liquid solutions. To this purpose, we investigate the electrical resistance of the film as a function of the isopropanol concentration in a water solution. The analysis reveals a growing resistance with increasing isopropanol concentration and a fast response.…
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We show that a multi-walled carbon nanotube film can be used as the sensing element of a low-cost sensor for the alcoholic concentration in liquid solutions. To this purpose, we investigate the electrical resistance of the film as a function of the isopropanol concentration in a water solution. The analysis reveals a growing resistance with increasing isopropanol concentration and a fast response. The sensing element is re-usable as the initial resistance value is restored once the solution has evaporated. The electrical resistance increases linearly when the multi-walled carbon nanotube film is exposed to common beverages with increasing alcoholic content. This work paves the way for the development of low-cost, miniaturized MWCNT-based sensors for quality monitoring and control of alcoholic beverages and general liquid solutions.
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Submitted 3 February, 2019;
originally announced February 2019.
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Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Aniello Pelella,
Xiaowei Liu,
Feng Miao,
Maurizio Passacantando,
Filippo Giubileo,
Alessandro Grillo,
Laura Iemmo,
Francesca Urban,
Shi-Jun Liang
Abstract:
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environmen…
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A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.
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Submitted 1 February, 2019;
originally announced February 2019.
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Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
Authors:
Francesca Urban,
Lisanne Peters,
Nadia Martucciello,
Niall McEvoy,
Antonio Di Bartolomeo
Abstract:
We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or decreasing the pressure change the device conductivity from p to n-type. We study the current-voltage characteristics as a function of the temperature and meas…
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We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or decreasing the pressure change the device conductivity from p to n-type. We study the current-voltage characteristics as a function of the temperature and measure a gate-tunable Schottky barrier at the contacts with a height of 60 meV in flat-band condition. We report and discuss a change in the mobility and the subthreshold slope observed with increasing temperature. Finally, we estimate the trap density at the WSe2/SiO2 interface and study the spectral photoresponse of the device, achieving a responsivity of 0.5 AW^-1 at 700 nm wavelength and 0.37 mWcm^-2 optical power.
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Submitted 25 August, 2018;
originally announced August 2018.
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A WSe2 vertical field emission transistor
Authors:
Antonio Di Bartolomeo,
Francesca Urban,
Maurizio Passacantando,
Niall McEvoy,
Lisanne Peters,
Laura Iemmo,
Giuseppe Luongo,
Francesco Romeo,
Filippo Giubileo
Abstract:
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Sch…
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We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. Electron emission occurs under an electric field ~100 V μm^(-1) and exhibit good time stability. Remarkably, the field emission current can be modulated by the back-gate voltage. The first field-emission vertical transistor based on WSe2 monolayer is thus demonstrated and can pave the way to further optimize new WSe2 based devices for use in vacuum electronics.
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Submitted 18 August, 2018; v1 submitted 6 August, 2018;
originally announced August 2018.
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Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Alessandro Grillo,
Francesca Urban,
Laura Iemmo,
Filippo Giubileo,
Giuseppe Luongo,
Giampiero Amato,
Luca Croin,
Linfeng Sun,
Shi-Jun Liang,
Lay Kee Ang
Abstract:
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to…
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We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, we propose a model based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at the electrically forced junction, while the reverse current is due to Schottky-barrier limited injection at the grounded junction. The device achieves a photo responsivity greater than 2.5 AW-1 under 5 mWcm-2 white-LED light. By comparing two- and four-probe measurements, we demonstrate that the hysteresis and persistent photoconductivity exhibited by the transistor are peculiarities of the MoS2 channel rather than effects of the Ti/MoS2 interface.
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Submitted 6 August, 2018;
originally announced August 2018.
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Authors:
Filippo Giubileo,
Laura Iemmo,
Maurizio Passacantando,
Francesca Urban,
Giuseppe Luongo,
Lingfeng Sun,
Giampiero Amato,
Emanuele Enrico,
Antonio Di Bartolomeo
Abstract:
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapp…
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Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of about 20 V/um with a field enhancement factor of about 500 at anode-cathode distance of 1.5um, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
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Submitted 3 August, 2018;
originally announced August 2018.
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Graphene-Silicon Schottky diodes for photodetection
Authors:
Antonio Di Bartolomeo,
Giuseppe Luongo,
Laura Iemmo,
Filippo Giubileo
Abstract:
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the interna…
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We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.
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Submitted 27 October, 2017;
originally announced October 2017.
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Field emission from self-catalyzed GaAs nanowires
Authors:
Filippo Giubileo,
Antonio Di Bartolomeo,
Laura Iemmo,
Giuseppe Luongo,
Maurizio Passacantando,
Eero Koivusalo,
Teemu V. Hakkarainen,
Mircea Guina
Abstract:
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field…
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We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications.
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Submitted 14 September, 2017;
originally announced September 2017.
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Graphene enhanced field emission from InP nanocrystals
Authors:
L. Iemmo,
A. Di Bartolomeo,
F. Giubileo,
G. Luongo,
M. Passacantando,
G. Niu,
F. Hatami,
O. Skibitzki,
T. Schroeder
Abstract:
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find t…
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We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
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Submitted 6 August, 2017;
originally announced August 2017.
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Hysteresis in the transfer characteristics of MoS2 transistors
Authors:
Antonio Di Bartolomeo,
Luca Genovese,
Filippo Giubileo,
Laura Iemmo,
Giuseppe Luongo,
Tobias Foller,
Marika Schleberger
Abstract:
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-fac…
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We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trap** at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trap**, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.
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Submitted 3 August, 2017;
originally announced August 2017.
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The role of contact resistance in graphene field-effect devices
Authors:
Filippo Giubileo,
Antonio Di Bartolomeo
Abstract:
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact…
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The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
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Submitted 11 May, 2017;
originally announced May 2017.
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Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
Authors:
Antonio Di Bartolomeo,
Luca Genovese,
Tobias Foller,
Filippo Giubileo,
Giuseppe Luongo,
Luca Croin,
Shi-Jun Liang,
L. K. Ang,
Marika Schleberger
Abstract:
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity a…
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We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trap** at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 kΩ/μm, ON current as high as 1.25 nA/μm, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W.
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Submitted 24 March, 2017;
originally announced March 2017.
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Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
Authors:
F. Giubileo,
L. Iemmo,
G. Luongo,
N. Martucciello,
M. Raimondo,
L. Guadagno,
M. Passacantando,
K. Lafdi,
A. Di Bartolomeo
Abstract:
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2…
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We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of the conductance shows that transport is mostly due to thermal fluctuation induced tunneling, although to explain the whole temperature range from 4.2 K to 430 K a further linear contribution is necessary. The field emission properties are measured by means of a nanocontrolled metallic tip acting as collector electrode to access local information about buckypaper properties from areas as small as 1 um2. Emitted current up to 10-5A and turn-on field of about 140V/um are recorded. Long operation, stability and robustness of emitters have been probed by field emission intensity monitoring for more than 12 hours at pressure of 10-6 mbar. Finally, no tuning of the emitted current was observed for in plane applied currents in the buckypaper.
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Submitted 26 January, 2017;
originally announced January 2017.
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Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Authors:
Antonio Di Bartolomeo,
Giuseppe Luongo,
Filippo Giubileo,
Nicola Funicello,
Gang Niu,
Thomas Schroeder,
Marco Lisker,
Grzegorz Lupina
Abstract:
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device…
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We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effective Richardson constant A**=4 10^(-5) Acm^(-2) K^(-2) and an ideality factor n=3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.
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Submitted 23 January, 2017;
originally announced January 2017.
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Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Authors:
Antonio Di Bartolomeo,
Maurizio Passacantando,
Gang Niu,
Viktoria Schlykow,
Grzegorz Lupina,
Filippo Giubileo,
Thomas Schroeder
Abstract:
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that f…
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We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that field emission can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.
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Submitted 8 August, 2016;
originally announced August 2016.
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Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
Authors:
F. Giubileo,
A. Di Bartolomeo,
N. Martucciello,
F. Romeo,
L. Iemmo,
P. Romano,
M. Passacantando
Abstract:
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate,…
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We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm$^2$V$^{-1}$s$^{-1}$. By using a highly doped p-Si/SiO$_2$ substrate as back gate, we analyze the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate that low energy irradiation is detrimental on the transistor current capability, resulting in an increase of the contact resistance and a reduction of the carrier mobility even at electron doses as low as 30 $e^-/nm^2$. We also show that the irradiated devices recover by returning to their pristine state after few repeated electrical measurements.
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Submitted 2 August, 2016;
originally announced August 2016.
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Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Giuseppe Luongo,
Laura Iemmo,
Nadia Martucciello,
Gang Niu,
Mirko Fraschke,
Oliver Skibitzki,
Thomas Schroeder,
Grzegorz Lupina
Abstract:
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor ga…
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We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.
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Submitted 22 July, 2016;
originally announced July 2016.
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Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Laura Iemmo,
Francesco Romeo,
Saverio Russo,
Selim Unal,
Maurizio Passacantando,
Valentina Grossi,
Anna Maria Cucolo
Abstract:
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, re…
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We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices.
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Submitted 30 January, 2016; v1 submitted 18 January, 2016;
originally announced January 2016.
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Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Francesco Romeo,
Paolo Sabatino,
Giovanni Carapella,
Laura Iemmo,
Thomas Schroeder,
Grzegorz Lupina
Abstract:
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb…
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We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
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Submitted 4 August, 2015;
originally announced August 2015.
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Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
Authors:
Antonio Di Bartolomeo
Abstract:
In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene…
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In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.
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Submitted 14 October, 2015; v1 submitted 28 May, 2015;
originally announced May 2015.
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Local characterization of ferromagnetic properties in ferromagnet/superconductor bilayer by Point Contact Andreev Reflection Spectroscopy
Authors:
Filippo Giubileo,
Francesco Romeo,
Roberta Citro,
Antonio Di Bartolomeo,
Carmine Attanasio,
Carla Cirillo,
Albino Polcari,
Paola Romano
Abstract:
We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thi…
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We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thickness of ferromagnetic layer, directly on bilayer areas. This is due to the high sensitivity of the Andreev surface states to the physical properties of the ferromagnetic interlayer.
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Submitted 18 July, 2014;
originally announced July 2014.
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Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
Authors:
A. Di Bartolomeo,
S. Santandrea,
F. Giubileo,
F. Romeo,
M. Petrosino,
R. Citro,
P. Barbara,
G. Lupina,
T. Schroeder,
A. Rubino
Abstract:
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure tra…
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We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We show that the contact resistance is a significant contributor to the total source-to-drain resistance and it is modulated by the back-gate voltage. We measure transfer characteristics showing double dip feature that we explain as the effect of do** due to charge transfer from the contacts causing minimum density of states for graphene under the contacts and in the channel at different gate voltage.
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Submitted 9 October, 2012;
originally announced October 2012.
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Impurity effects on Fabry-Perot physics of ballistic carbon nanotubes
Authors:
F. Romeo,
R. Citro,
A. Di Bartolomeo
Abstract:
We present a theoretical model accounting for the anomalous Fabry-Perot pattern observed in the ballistic conductance of a single-wall carbon nanotubes. Using the scattering field theory, it is shown that the presence of a limited number of impurities along the nanotube can be identified by a measurement of the conductance and their position determined. Impurities can be made active or silent depe…
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We present a theoretical model accounting for the anomalous Fabry-Perot pattern observed in the ballistic conductance of a single-wall carbon nanotubes. Using the scattering field theory, it is shown that the presence of a limited number of impurities along the nanotube can be identified by a measurement of the conductance and their position determined. Impurities can be made active or silent depending on the interaction with the substrate via the back-gate. The conceptual steps for designing a bio-molecules detector are briefly discussed.
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Submitted 6 September, 2011;
originally announced September 2011.
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Field emission from single and few-layer graphene flakes
Authors:
S. Santandrea,
F. Giubileo,
V. Grossi,
S. Santucci,
M. Passacantando,
T. Schroeder,
G. Lupina,
A. Di Bartolomeo
Abstract:
We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 μA from the flat pa…
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We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 μA from the flat part of graphene flakes at applied fields of few hundred V/μm. We found that emission process is stable over a period of several hours and that it is well described by a Fowler-Nordheim model for currents over 5 orders of magnitude.
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Submitted 16 February, 2011;
originally announced February 2011.
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Charge transfer and trap** as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
Authors:
Antonio Di Bartolomeo,
Filippo Giubileo,
Salvatore Santandrea,
Francesco Romeo,
Roberta Citro,
Thomas Schroeder,
And Grzegorz Lupina
Abstract:
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel…
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We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops.
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Submitted 11 February, 2011;
originally announced February 2011.
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Field emission properties of as-grown multiwalled carbon nanotube films
Authors:
F. Giubileo,
A. Di Bartolomeo,
M. Sarno,
C. Altavilla,
S. Santandrea,
P. Ciambelli,
A. M. Cucolo
Abstract:
Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sampl…
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Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sample. Buckypapers showed an interesting linear dependence in the Fowler-Nordheim plots demonstrating their suitability as emitters. By precisely tuning the tip-sample distance in the submicron region we found out that the field enhancement factor is not affected by distance variations up to 2um. Finally, the study of current stability showed that the field emission current with intensity of about 3,3*10-5A remains remarkably stable (within 5% fluctuations) for several hours.
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Submitted 9 February, 2011;
originally announced February 2011.
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Field emission from single multi-wall carbon nanotubes
Authors:
M. Passacantando,
F. Bussolotti,
S. Santucci,
A. Di Bartolomeo,
F. Giubileo,
L. Iemmo,
A. M. Cucolo
Abstract:
Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled car…
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Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.
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Submitted 6 March, 2008;
originally announced March 2008.
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Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes
Authors:
F. Giubileo,
A. Di Bartolomeo,
A. Scarfato,
L. Iemmo,
F. Bobba,
M. Passacantando,
S. Santucci,
A. M. Cucolo
Abstract:
Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to me…
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Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes.
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Submitted 29 February, 2008;
originally announced February 2008.
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A local field emission study of partially aligned carbon-nanotubes by AFM probe
Authors:
A. Di Bartolomeo,
A. Scarfato,
F. Giubileo,
F. Bobba,
M. Biasucci,
A. M. Cucolo,
S. Santucci,
M. Passacantando
Abstract:
We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventi…
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We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$μ$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $γ\approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$μ$m at an inter-electrode distance of 1 $μ$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$Ω$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed.
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Submitted 28 February, 2007;
originally announced February 2007.
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Status of Salerno Laboratory (Measurements in Nuclear Emulsion)
Authors:
S. Amendola,
E. Barbuto,
C. Bozza,
C. D'Apolito,
A. Di Bartolomeo,
M. Funaro,
G. Grella,
G. Iovane,
P. Pelosi,
G. Romano
Abstract:
A report on the analysis work in the Salerno Emulsion Laboratory is presented. It is related to the search for nu_mu->nu_tau oscillations in CHORUS experiment, the calibrations in the WANF (West Area Neutrino Facility) at Cern and tests and preparation for new experiments.
A report on the analysis work in the Salerno Emulsion Laboratory is presented. It is related to the search for nu_mu->nu_tau oscillations in CHORUS experiment, the calibrations in the WANF (West Area Neutrino Facility) at Cern and tests and preparation for new experiments.
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Submitted 25 January, 1999;
originally announced January 1999.
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SySal: System of Salerno
Authors:
S. Amendola,
E. Barbuto,
C. Bozza,
C. D'Apolito,
A. Di Bartolomeo,
M. Funaro,
G. Grella,
G. Iovane,
P. Pelosi,
G. Romano
Abstract:
SySal (SYstem of SALerno) is the automatic scanning system developed in the emulsion laboratory of Salerno to take part in the emulsion scanning phase of the CHORUS experiment at CERN. In the following chapters we will present features, results and further developments of this automatic multi-tracking system.
SySal (SYstem of SALerno) is the automatic scanning system developed in the emulsion laboratory of Salerno to take part in the emulsion scanning phase of the CHORUS experiment at CERN. In the following chapters we will present features, results and further developments of this automatic multi-tracking system.
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Submitted 25 January, 1999; v1 submitted 22 January, 1999;
originally announced January 1999.
