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Recrystallization of epitaxial GaN under indentation
Authors:
S. Dhara,
C. R. Das,
H. C. Hsu,
Baldev Raj,
A. K. Bhaduri,
L. C. Chen,
K. H. Chen,
S. K. Albert,
Ayan Ray
Abstract:
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman…
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We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area map** indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.
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Submitted 15 April, 2008; v1 submitted 10 April, 2008;
originally announced April 2008.
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Deformation potential dominated phonons in ZnS quantum dots
Authors:
S. Dhara,
A. K. Arora,
Jay Ghatak,
K. H. Chen,
C. P. Liu,
L. C. Chen,
Y. Tzeng,
Baldev Raj
Abstract:
Strong deformation potential (DP) dominated Raman spectra are reported for quantum confined cubic ZnS nanoclusters under off-resonance conditions allowed only in quantum dots. A flurry of zone boundary phonons is demonstrated in the scattering process. Transverse optic (TO) mode in the multi-phonon process shows only even order overtones suggesting the dominance of a two-phonon process (having l…
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Strong deformation potential (DP) dominated Raman spectra are reported for quantum confined cubic ZnS nanoclusters under off-resonance conditions allowed only in quantum dots. A flurry of zone boundary phonons is demonstrated in the scattering process. Transverse optic (TO) mode in the multi-phonon process shows only even order overtones suggesting the dominance of a two-phonon process (having large DP value in ZnS) and its integral multiples. Two-phonon TO modes corresponding to A1 and B2 symmetries are also demonstrated under off-resonance conditions which are allowed only in quantum dots.
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Submitted 5 July, 2008; v1 submitted 12 September, 2007;
originally announced September 2007.
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Multi-phonon Raman scattering in GaN nanowires
Authors:
S. Dhara,
Sharat Chandra,
G. Mangamma,
S. Kalavathi,
P. Shankar,
K. G. M. Nair,
A. K. Tyagi,
C. W. Hsu,
C. C. Kuo,
L. C. Chen,
K. H. Chen,
K. K. Sriram
Abstract:
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant…
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UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ~3 nm.
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Submitted 16 August, 2007;
originally announced August 2007.
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Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
Authors:
S. Dhara,
P. Magudapathy,
R. Kesavamoorthy,
S. Kalavathi,
V. S. Sastry,
K. G. M. Nair,
G. M. Hsu,
L. C. Chen,
K. H. Chen,
K. Santhakumar,
T. Soga
Abstract:
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at tem…
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InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
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Submitted 16 August, 2007;
originally announced August 2007.
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Ferromagnetism in cobalt doped n-GaN
Authors:
S. Dhara,
B. Sundaravel,
K. G. M. Nair,
R. Kesavamoorthy,
M. C. Valsakumar,
T. V. Chandrasekhar Rao,
L. C. Chen,
K. H. Chen
Abstract:
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordere…
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Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.
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Submitted 16 August, 2007;
originally announced August 2007.
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Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
Authors:
S. Dhara,
P. Magudapathy,
R. Kesavamoorthy,
S. Kalavathi,
K. G. M. Nair,
G. M. Hsu,
L. C. Chen,
K. H. Chen,
K. Santhakumar,
T. Soga
Abstract:
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition…
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Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.
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Submitted 16 August, 2007;
originally announced August 2007.
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Bulk ferromagnetism and large changes in photoluminescence intensity by magnetic field in $β$-Ga$_2$O$_3$
Authors:
V. Sridharan,
Sangam Banerjee,
Manas Sardar,
Sandip Dhara,
N. Gayathri,
V. S. Sastry
Abstract:
In this letter we report observation of room temperature ferromagnetism in bulk Ga$_2$O$_3$ . We also observe large (10-60%) increase/decrease in photoluminescence. In the red(700 nm wavelength)/blue(500 nm), with the application of small magnetic field(0.4 Tesla). We argue, that ferromagnetism occurs entirely due to chains of oxygen(O(3) sites, Fig. 5) vacancies. We propose a simple model to ex…
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In this letter we report observation of room temperature ferromagnetism in bulk Ga$_2$O$_3$ . We also observe large (10-60%) increase/decrease in photoluminescence. In the red(700 nm wavelength)/blue(500 nm), with the application of small magnetic field(0.4 Tesla). We argue, that ferromagnetism occurs entirely due to chains of oxygen(O(3) sites, Fig. 5) vacancies. We propose a simple model to explain, origin and location of moment, formation of ferromagnetic dislocation needles, and strong increase/decrease ofred/blue photoluminescence intensity with magnetic field.
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Submitted 11 January, 2007;
originally announced January 2007.
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Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire
Authors:
S. Mal,
A. Singha,
S. Dhara,
A. Roy
Abstract:
In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we…
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In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for $E_2$(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering.
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Submitted 27 June, 2006; v1 submitted 13 May, 2005;
originally announced May 2005.
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Blue luminescence of Au nanoclusters embedded in silica matrix
Authors:
S. Dhara,
Sharat Chandra,
P. Magudapathy,
S. Kalavathi,
B. K. Panigrahi,
K. G. M. Nair,
V. S. Sastry,
C. W. Hsu,
C. T. Wu,
K. H. Chen,
L. C. Chen
Abstract:
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Ra…
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Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Radiative recombination of sp electrons above Fermi level to occupied d-band holes are assigned for observed luminescence peaks. Peaks at 3.1 eV and 3.4 eV are correlated to energy gaps at the X- and L-symmetry points, respectively, with possible involvement of relaxation mechanism. The blue shift of peak positions at 3.4 eV with decreasing cluster size is reported to be due to the compressive strain in small clusters. A first principle calculation based on density functional theory using the full potential linear augmented plane wave plus local orbitals (FP-LAPW+LO) formalism with generalized gradient approximation (GGA) for the exchange correlation energy is used to estimate the band gaps at the X- and L-symmetry points by calculating the band structures and joint density of states (JDOS) for different strain values in order to explain the blueshift of ~0.1 eV with decreasing cluster size around L-symmetry point.
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Submitted 29 September, 2004;
originally announced September 2004.
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Acoustic vibrations of a silica-embedded gold nanoparticle: elastic anisotropy
Authors:
Daniel B. Murray,
S. Dhara,
T. R. Ravindran,
K. G. M. Nair,
S. Kalavathi,
Lucien Saviot,
Eugene Duval
Abstract:
Spherical gold nanoclusters are grown by 1.8 MeV Au++ ion implantation into an amorphous silica matrix and subsequent air annealing at 873 K. Ultraviolet and visible light absorption confirms the presence of a dipolar surface plasmon peak at the expected location for a gold sphere in silica. Grazing incidence X-ray diffraction shows peaks corresponding to fcc gold with lattice spacing close to t…
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Spherical gold nanoclusters are grown by 1.8 MeV Au++ ion implantation into an amorphous silica matrix and subsequent air annealing at 873 K. Ultraviolet and visible light absorption confirms the presence of a dipolar surface plasmon peak at the expected location for a gold sphere in silica. Grazing incidence X-ray diffraction shows peaks corresponding to fcc gold with lattice spacing close to that of bulk gold, as well as allowing estimation of cluster size using Scherrer's formula. Low frequency Raman scattering reveals a relatively narrow peak, suggesting a narrow distribution of nanocrystal diameters. Acoustic phonon frequencies corresponding to the spheroidal quadrupolar vibrations of a continuum sphere with the anisotropic elasticity of gold are calculated using a novel method of molecular dynamics and extrapolation to the continuum limit using relatively small numbers of point masses. The study confirms high energy ion implantation as a method capable of producing gold nanocrystals with spherical shape and well controlled size.
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Submitted 21 July, 2004;
originally announced July 2004.
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Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+-Implantation
Authors:
Sandip Dhara,
Anindya Datta,
Chi-We Hsu,
Chien-Ting Wu,
Ching-Hsing Shen,
Zon-Huang Lan,
Kuei-Hsien Chen,
Li-Chyong Chen,
Yuh-Lin Wang,
Chia-Chun Chen
Abstract:
Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the s…
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Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Other potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.
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Submitted 3 February, 2004;
originally announced February 2004.
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Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire
Authors:
S. Dhara,
A. Datta,
C. T. Wu,
Z. H. Lan,
K. H. Chen,
Y. L. Wang,
C. W. Hsu,
L. C. Chen,
H. M. Lin,
C. C. Chen,
Y. F. Chen
Abstract:
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduc…
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Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.
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Submitted 2 February, 2004;
originally announced February 2004.
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Blueshift of plasmon resonance with decreasing cluster size in Au nanoclusters embedded in silica matrix
Authors:
S. Dhara,
B. Sundaravel,
T. R. Ravindran,
K. G. M. Nair,
B. K. Panigrahi,
P. Magudapathy
Abstract:
Gold nanoclusters are grown by 1.8 MeV Au++ implantation in silica matrix and subsequent air annealing in the temperature range of 873K-1273K. Post-annealed samples show plasmon resonance in the optical region (~ 2.38-2.51 eV) for average cluster radii ~1.04-1.74 nm. A blueshift of the plasmon peak is observed with decreasing cluster size in the annealed samples. Similar trend of blueshift with…
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Gold nanoclusters are grown by 1.8 MeV Au++ implantation in silica matrix and subsequent air annealing in the temperature range of 873K-1273K. Post-annealed samples show plasmon resonance in the optical region (~ 2.38-2.51 eV) for average cluster radii ~1.04-1.74 nm. A blueshift of the plasmon peak is observed with decreasing cluster size in the annealed samples. Similar trend of blueshift with decreasing cluster size in case of Au nanoclusters embedded in the porous alumina matrix [B. Palpant, et al., Phys. Rev. B 57, 1963 (1998)] has convinced us to assume a possible role of 'rind' like porosity at the Au nanocluster-matrix interface with available open volume defects in the amorphous silica matrix.
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Submitted 30 January, 2004;
originally announced January 2004.
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'Spillout' effect in gold nanoclusters embedded in c-Al2O3(0001) matrix
Authors:
S. Dhara,
B. Sundaravel,
T. R. Ravindran,
K. G. M. Nair,
C. David,
B. K. Panigrahi,
P. Magudapathy,
K. H. Chen
Abstract:
Gold nanoclusters are grown by 1.8 MeV Au^\sup{2+} implantation on c-Al\sub{2}O\sub{3}(0001)substrate and subsequent air annealing at temperatures 1273K. Post-annealed samples show plasmon resonance in the optical (561-579 nm) region for average cluster sizes ~1.72-2.4 nm. A redshift of the plasmon peak with decreasing cluster size in the post-annealed samples is assigned to the 'spillout' effec…
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Gold nanoclusters are grown by 1.8 MeV Au^\sup{2+} implantation on c-Al\sub{2}O\sub{3}(0001)substrate and subsequent air annealing at temperatures 1273K. Post-annealed samples show plasmon resonance in the optical (561-579 nm) region for average cluster sizes ~1.72-2.4 nm. A redshift of the plasmon peak with decreasing cluster size in the post-annealed samples is assigned to the 'spillout' effect (reduction of electron density) for clusters with ~157-427 number of Au atoms fully embedded in crystalline dielectric matrix with increased polarizability in the embedded system.
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Submitted 26 October, 2004; v1 submitted 30 January, 2004;
originally announced January 2004.
