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Atomic engineering of interfacial polarization switching in van der Waals multilayers
Authors:
Madeline Van Winkle,
Nikita Dowlatshahi,
Nikta Khaloo,
Mrinalni Iyer,
Isaac M. Craig,
Rohan Dhall,
Takashi Taniguchi,
Kenji Watanabe,
D. Kwabena Bediako
Abstract:
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. H…
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In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here, we show that introducing interlayer rotations in multilayer vdW heterostructures modulates both the spatial ordering and switching dynamics of polar domains, engendering unique tunability that is unparalleled in conventional bulk ferroelectrics or polar bilayers. Using operando transmission electron microscopy we show how changing the relative rotations of three WSe2 layers produces structural polytypes with distinct arrangements of polar domains, leading to either a global or localized switching response. Introducing uniaxial strain generates structural anisotropy that yields a range of switching behaviors, coercivities, and even tunable biased responses. We also provide evidence of physical coupling between the two interfaces of the trilayer, a key consideration for controlling switching dynamics in polar multilayer structures more broadly.
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Submitted 28 November, 2023;
originally announced November 2023.
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Design of Electrostatic Aberration Correctors for Scanning Transmission Electron Microscopy
Authors:
Stephanie M. Ribet,
Steven E. Zeltmann,
Karen C. Bustillo,
Rohan Dhall,
Peter Denes,
Andrew M. Minor,
Roberto dos Reis,
Vinayak P. Dravid,
Colin Ophus
Abstract:
In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole lenses, but th…
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In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole lenses, but these devices are complex, expensive, and can be difficult to tune. We demonstrate a design for an electrostatic phase plate that can act as an aberration corrector. The corrector is comprised of annular segments, each of which is an independent two-terminal device that can apply a constant or ramped phase shift to a portion of the electron beam. We show the improvement in image resolution using an electrostatic corrector. Engineering criteria impose that much of the beam within the probe-forming aperture be blocked by support bars, leading to large probe tails for the corrected probe that sample the specimen beyond the central lobe. We also show how this device can be used to create other STEM beam profiles such as vortex beams and beams with a high degree of phase diversity, which improve information transfer in ptychographic reconstructions.
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Submitted 16 March, 2023;
originally announced March 2023.
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Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material
Authors:
Silvia Pandolfi,
Shiteng Zhao,
John Turner,
Peter Ercius,
Chengyu Song,
Rohan Dhall,
Nicolas Menguy,
Yann Le Godec,
Alexandre Courac,
Andrew M. Minor,
Jon Eggert,
Leora E. Dresselhaus-Marais
Abstract:
In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi-scale imaging, we reveal a hierarchical structure in the morphology of Si-4H obtained from high-pressure synthesis. We demonstrate discrete structural units, platelets, at an intermediate length-scale between the bul…
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In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using multi-scale imaging, we reveal a hierarchical structure in the morphology of Si-4H obtained from high-pressure synthesis. We demonstrate discrete structural units, platelets, at an intermediate length-scale between the bulk pellets synthesized at high pressures and the flake-like crystallites inferred in previous studies. Direct observation of the platelets reveals their 2D structure, with planar faces spanning hundreds of nanometers to a few micrometers and thicknesses of only tens of nanometers. We separated and dispersed small packets of quasi-single platelets, which enabled us to analyze the crystalline domains within each grain. With this view, we demonstrate that Si-4H platelets represent the smallest crystalline structural units, which can bend at the single-domain level. Our characterization of the quasi-2D, flexible platelets of hexagonal Si-4H and proof of concept that the platelets can be dispersed and manipulated quite simply demonstrate opportunities to design novel optoelectronic and solar devices.
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Submitted 6 October, 2021;
originally announced October 2021.
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Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress
Authors:
Lunjie Zeng,
Jonatan Holmer,
Rohan Dhall,
Christoph Gammer,
Andrew M. Minor,
Eva Olsson
Abstract:
Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowire…
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Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual GaAs nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ~5-20% up to a stress of 1~ 2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ 4D-scanning TEM (STEM) and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.
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Submitted 13 April, 2021;
originally announced April 2021.
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Temperature Driven Transformation of CsPbBr$_3$ Nanoplatelets into Mosaic Nanotiles in Solution through Self-Assembly
Authors:
Zhiya Dang,
Balaji Dhanabalan,
Andrea Castelli,
Rohan Dhall,
Karen C. Bustillo,
Dorwal Marchelli,
Davide Spirito,
Urko Petralanda,
Javad Shamsi,
Liberato Manna,
Roman Krahne,
Milena P. Arciniegas
Abstract:
Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arr…
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Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arrangement of their assemblies remain unclear. Here, we present the transformation of self-assembled stacks of CsPbBr$_3$ nanoplatelets in solution, capturing the different stages of the process by kee** the solutions at room temperature and monitoring the nanocrystal morphology over a period of a few months. Using ex-situ transmission electron microscopy and surface analysis, we demonstrate that the transformation mechanism can be understood as oriented attachment, proceeding through the following steps: i) desorption of the ligands from the particles surfaces, causing the merging of nanoplatelet stacks, which first form nanobelts; ii) merging of neighboring nanobelts that form more extended nanoplates; and iii) attachment of nanobelts and nanoplates, which create objects with an atomic structure that resemble a mosaic made of broken nanotiles. We reveal that the starting nanoplatelets merge seamlessly and defect-free on an atomic scale in small and thin nanobelts. However, aged nanobelts and nanoplates, which are mainly stabilized by amine/ammonium ions, link through a bilayer of CsBr. In this case, the atomic columns of neighboring perovskite lattices shift by a half-unit-cell, forming Ruddlesden-Popper planar faults.
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Submitted 4 May, 2020;
originally announced May 2020.
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Towards a Supply Chain Management System for Counterfeit Mitigation using Blockchain and PUF
Authors:
Leonardo Aniello,
Basel Halak,
Peter Chai,
Riddhi Dhall,
Mircea Mihalea,
Adrian Wilczynski
Abstract:
The complexity of today's supply chain, organised in several tiers and including many companies located in different countries, makes it challenging to assess the history and integrity of procured physical parts, and to make organisations really accountable for their conduct. This enables malicious practices like counterfeiting and insertion of back doors, which are extremely dangerous, especially…
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The complexity of today's supply chain, organised in several tiers and including many companies located in different countries, makes it challenging to assess the history and integrity of procured physical parts, and to make organisations really accountable for their conduct. This enables malicious practices like counterfeiting and insertion of back doors, which are extremely dangerous, especially in supply chains of physical parts for industrial control systems used in critical infrastructures, where a country and human lives can be put at risk. This paper aims at mitigating these issues by proposing an approach where procured parts are uniquely identified and tracked along the chain, across multiple sites, to detect tampering. Our solution is based on consortium blockchain and smart contract technologies, hence it is decentralised, highly available and provides strong guarantees on the integrity of stored data and executed business logic. The unique identification of parts along the chain is implemented by using physically unclonable functions (PUFs) as tamper-resistant IDs. We first define the threat model of an adversary interested in tampering with physical products along the supply chain, then provide the design of the tracking system that implements the proposed anti-counterfeiting approach. We present a security analysis of the tracking system against the designated threat model and a prototype evaluation to show its technical feasibility and assess its effectiveness in counterfeit mitigation. Finally, we discuss several key practical aspects concerning our solution ad its integration with real supply chains.
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Submitted 2 September, 2019; v1 submitted 26 August, 2019;
originally announced August 2019.
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Probing collective oscillation of $d$-orbital electrons at the nanoscale
Authors:
Rohan Dhall,
Derek Vigil-Fowler,
J. Houston Dycus,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
James M. LeBeau
Abstract:
Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin…
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Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin of these spectral features is attributed to 3$d$--electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al$_{1-x}$Ga$_x$N due to the different polarizability of the $d$ electrons. Finally, we study the dependence of observed plasmon modes on Ga content, lending insight into plasmon coupling with electron--hole excitations.
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Submitted 12 August, 2017;
originally announced August 2017.
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Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment
Authors:
Rohan Dhall,
Zhen Li,
Ewa Kosmowska,
Stephen B. Cronin
Abstract:
Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process.…
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Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process. In this study, we demonstrate a simple and reliable oxygen plasma treatment, which mitigates the effects of unintentional do** created by surface defect cites, such as S vacancies, and surface contamination. This plasma treatment restores charge neutrality to the MoS2 and shifts the threshold turn-on voltage towards 0V. Out of the 8 devices measured, all exhibit a shift of the FET turn-on voltage from an average of -18.7V to -0.9V. The oxygen plasma treatment passivates these defects, which reduces surface scattering, causing increased mobility and improved subthreshold swing. For as-prepared devices with low mobilities (~0.01cm2/V.s), we observe up to a 190-fold increase in mobility after exposure to the oxygen plasma. Perhaps the most important aspect of this oxygen plasma treatment is that it reduces the device-to-device variability, which is a crucial factor in realizing any practical application of these devices.
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Submitted 25 July, 2016;
originally announced July 2016.
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Scanning gate microscopy of ultra clean carbon nanotube quantum dots
Authors:
Jiamin Xue,
Rohan Dhall,
Stephen B. Cronin,
Brian J. LeRoy
Abstract:
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlap** multiple sets of Coulomb rings from a single quantum dot. In…
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We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlap** multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.
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Submitted 21 August, 2015;
originally announced August 2015.
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Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
Authors:
Bilu Liu,
Marianne Köpf,
Ahmad A. Abbas,
Xiaomu Wang,
Qiushi Guo,
Yichen Jia,
Fengnian Xia,
Richard Weihrich,
Frederik Bachhuber,
Florian Pielnhofer,
Han Wang,
Rohan Dhall,
Stephen B. Cronin,
Mingyuan Ge,
Xin Fang,
Tom Nilges,
Chongwu Zhou
Abstract:
Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors,…
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Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices.
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Submitted 26 May, 2015;
originally announced May 2015.
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Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators
Authors:
Vibhor Singh,
Shamashis Sengupta,
Hari S. Solanki,
Rohan Dhall,
Adrien Allain,
Sajal Dhara,
Prita Pant,
Mandar M. Deshmukh
Abstract:
We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find th…
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We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300K and 30K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With lowering of temperature, we find that the positively dispersing electromechanical modes evolve to negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature compensated sensors.
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Submitted 25 January, 2010;
originally announced January 2010.
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Tuning mechanical modes and influence of charge screening in nanowire resonators
Authors:
Hari S. Solanki,
Shamashis Sengupta,
Sajal Dhara,
Vibhor Singh,
Sunil Patil,
Rohan Dhall,
Jeevak Parpia,
Arnab Bhattacharya,
Mandar M. Deshmukh
Abstract:
We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We obse…
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We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.
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Submitted 17 January, 2010;
originally announced January 2010.
