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Unveiling Unconventional Ferroelectric Switching in Multiferroic Ga0.6 Fe1.4O3 Thin Films Through Multiscale Electron Microscopy Investigations
Authors:
Anna Demchenko,
Suvidyakumar Homkar,
Corinne Bouillet,
Christophe Lefèvre,
François Roulland,
Daniele Preziosi,
Gilles Versini,
Cédric Leuvrey,
Philippe Boullay,
Xavier Devaux,
Nathalie Viart
Abstract:
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for ferroelectricity in most of the usual displacive ferroelectric materials is too energy-demanding for some newly diagnosed ferroelectric materials such as the Ga2-xFexO3…
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Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for ferroelectricity in most of the usual displacive ferroelectric materials is too energy-demanding for some newly diagnosed ferroelectric materials such as the Ga2-xFexO3 (0.8 < x < 1.4) compounds. Some alternative theoretical propositions have been made and need experimental confirmation. A dual-scale electron microscopy study is performed on thin films of the Ga0.6Fe1.4O3 multiferroic compound. A wide scale precession-assisted electron diffraction tomography study first allows the determination of the structure the compound adopts in thin films, and even permits the refinement of the atomic positions within this structure. Cationic mobility is suggested for two of the atomic positions through the existence of extra electronic density. A local in situ high resolution scanning transmission electron microscopy study then allows confirming these mobilities by directly spotting the cationic displacements on successively acquired images. The whole study confirms an unconventional switching mechanism via local domain wall motion in this compound.
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Submitted 12 July, 2022;
originally announced July 2022.
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Covalent Functionalization of HiPco Single-Walled Carbon Nanotubes: Differences in the Oxidizing Action of H2SO4 and HNO3 during a Soft Oxidation Process
Authors:
Xavier Devaux,
Brigitte Vigolo,
Edward Mcrae,
Fabrice Valsaque,
Naoual Allali,
Victor Mamane,
Yves Fort,
Alexander V. Soldatov,
M. Dossot,
Svetlana Yu. Tsareva
Abstract:
The results of a study on the evolution of HiPco single-walled carbon nanotubes during the oxidizing action of H2SO4 and HNO3 are presented. The process conditions used have been chosen so as to avoid any significant damage to the nanotube structure. The type and level of functionalization, the location of the grafted functions on the surface of the nanotube and the changes in morphological charac…
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The results of a study on the evolution of HiPco single-walled carbon nanotubes during the oxidizing action of H2SO4 and HNO3 are presented. The process conditions used have been chosen so as to avoid any significant damage to the nanotube structure. The type and level of functionalization, the location of the grafted functions on the surface of the nanotube and the changes in morphological characteristics of the samples were examined by using a wide and complementary range of analytical techniques. We propose an explanation for the differences in the oxidizing action of sulfuric and nitric acids. The combined results allow us to suggest possible reaction mechanisms that occur on the surface of the nanotube.
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Submitted 15 November, 2021;
originally announced November 2021.
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Dose-dependent isotherm of Kr adsorption on heterogeneous bundles of closed single-walled carbon nanotubes
Authors:
Svetlana Yu Tsareva,
Edward Mcrae,
Fabrice Valsaque,
Xavier Devaux
Abstract:
We present 77 K isotherms of krypton adsorption on bundles of closed highly-pure HiPco single-walled carbon nanotubes (SWCNTs). Two volumetric adsorption protocols were used, one with an increasing Kr dose per injection (IAD), one with a constant dose (CAD). Detailed microstructural examination showed that the SWCNTs combine into small bundles (of 25-30 SWCNTs) which are heterogeneous in diameter…
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We present 77 K isotherms of krypton adsorption on bundles of closed highly-pure HiPco single-walled carbon nanotubes (SWCNTs). Two volumetric adsorption protocols were used, one with an increasing Kr dose per injection (IAD), one with a constant dose (CAD). Detailed microstructural examination showed that the SWCNTs combine into small bundles (of 25-30 SWCNTs) which are heterogeneous in diameter with a consequential range of interstitial channel (IC) shapes and sizes. The IC-sites are the subnanoscaled pores with alternating enlargements and constrictions along the tube axes. This results in adsorption dosing (AD) dependent characteristics of the low-pressure region of the isotherm. In the IAD protocol the switch-back behavior of the isotherm stemmed from metastable adsorption. Using the CAD protocol, different branches are observed. Well-pronounced substeps were established which we interpret as corresponding to the formation of various phases of confined Kr with different atoms arrangement. The height of a given substep obtained in different measurements depends on the AD value which can strongly influence the population of the site. Some substeps existing only for certain values of AD suggests the existence of a certain selectivity or of a preferential phase formation according to this value.
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Submitted 12 November, 2021;
originally announced November 2021.
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Large perpendicular magnetic anisotropy in Ta/CoFeB/MgO on full coverage monolayer MoS2 and first principle study of its electronic structure
Authors:
Ziqi Zhou,
Paul Marcon,
Xavier Devaux,
Philippe Pigeat,
Alexandre Bouché,
Sylvie Migot,
Abdallah Jaafar,
Remi Arras,
Michel Vergnat,
Lei Ren,
Hans Tornatzky,
Cedric Robert,
Xavier Marie,
Jean-Marie George,
Henri-Yves Jaffrès,
Mathieu Stoffel,
Hervé Rinnert,
Zhongming Wei,
Pierre Renucci,
Lionel Calmels,
Yuan Lu
Abstract:
Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy…
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Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for develo** spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with a large perpendicular magnetic anisotropy (PMA) on full coverage monolayer (ML) MoS2. A large perpendicular interface anisotropy energy of 0.975mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role to establish the large PMA. First principle calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from an indirect bandgap with 7ML-MgO to a direct bandgap with 3ML-MgO. Proximity effect induced by Fe results in a splitting of 10meV in the valence band at the Γ point for the 3ML-MgO structure while it is negligible for the 7ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices on 2D transition-metal dichalcogenide materials.
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Submitted 18 June, 2021;
originally announced June 2021.
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Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field
Authors:
Alaa E. Giba,
Xue Gao,
Mathieu Stoffel,
Xavier Devaux,
Bo Xu,
Xavier Marie,
Pierre Renucci,
Henri Jaffrès,
Jean-Marie George,
Guangwei Cong,
Zhanguo Wang,
Hervé Rinnert,
Yuan Lu
Abstract:
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and…
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We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin relaxation process. The first step occurs when electrons tunnel through the MgO barrier and travel across the GaAs depletion layer. The spin relaxation is dominated by the Dyakonov-Perel mechanism related to the kinetic energy of electrons, which is characterized by a bias dependent Pc. The second step occurs when electrons are captured into QDs prior to their radiative recombination with holes. The temperature dependence of Pc reflects the temperature induced modification of the QDs do**, together with the variation of the ratio between the charge carrier lifetime and the spin relaxation time inside the QDs. The understanding of these spin relaxation mechanisms is essential to improve the performance of spin LED for future spin optoelectronic applications at room temperature under zero applied magnetic field.
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Submitted 14 August, 2020;
originally announced August 2020.
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Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
Authors:
P. Barate,
S. Liang,
T. T. Zhang,
J. Frougier,
M. Vidal,
P. Renucci,
X. Devaux,
B. Xu,
H. Jaffrès,
J. M. George,
X. Marie,
M. Hehn,
S. Mangin,
Y. Zheng,
T. Amand,
B. Tao,
X. F. Han,
Z. Wang,
Y. Lu
Abstract:
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for t…
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An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350°C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.
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Submitted 7 April, 2020;
originally announced April 2020.
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Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions
Authors:
Can Xiao,
Huawei Sun,
Luming Cheng,
Xavier Devaux,
Anthony Ferri,
Weichuan Huang,
Rachel Desfeux,
Xiao-Guang Li,
Sylvie Migot,
Mairbek Chshiev,
Sajid Rauf,
Yajun Qi,
Ruilong Wang,
Tian** Zhang,
Chang** Yang,
Shiheng Liang,
Yuan Lu
Abstract:
Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the F…
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Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.
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Submitted 7 April, 2020;
originally announced April 2020.
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Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions
Authors:
Xue Gao,
Shiheng Liang,
Anthony Ferri,
Weichuan Huang,
Didier Rouxel,
Xavier Devaux,
Xiao-Guang Li,
Hongxin Yang,
Mairbek Chshiev,
Rachel Desfeux,
Antonio Da Costa,
Guichao Hu,
Mathieu Stoffel,
Abir Nachawaty,
Chun** Jiang,
Zhongming Zeng,
Jian-** Liu,
Hui Yang,
Yuan Lu
Abstract:
We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 45…
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We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier.
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Submitted 7 April, 2020;
originally announced April 2020.
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Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers
Authors:
Protyush Sahu,
Yifei Yang,
Yihong Fan,
Henri Jaffres,
Jun-Yang Chen,
Xavier Devaux,
Yannick Fagot-Revurat,
Sylvie Migot,
Enzo Rongione,
Sukdheep Dhillon,
Tongxin Chen,
Pambiang Abel Dainone,
Jean-Marie George,
Yuan Lu,
Jian-** Wang
Abstract:
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two me…
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Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG/CoFeB(5 nm) bilayers with different BSG thicknesses. Firstly, spin pum** is used to generate a spin current in CoFeB and to detect SCC by inverse Edelstein effect. The maximum SCC efficiency (SCE) is measured as large as 0.035 nm in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is the THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until to the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction towards the search for topological systems in the amorphous solids.
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Submitted 30 July, 2023; v1 submitted 8 November, 2019;
originally announced November 2019.
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Evidence of Pure Spin-Current Generated by Spin Pum** in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
Authors:
C. Cerqueira,
J. Y. Qin,
H. Dang,
A. Djeffal,
J. -C. Le Breton,
M. Hehn,
J. -C. Rojas-Sanchez,
X. Devaux,
S. Suire,
S. Migot,
P. Schieffer,
J. -G. Mussot,
P. Laczkowski,
A. Anane,
S. Petit-Watelot,
M. Stoffel,
S. Mangin,
Z. Liu,
B. W. Cheng,
X. F. Han,
H. Jaffrès,
J. -M. George,
Y. Lu
Abstract:
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in…
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Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2μm in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pum** and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pum** action.
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Submitted 10 February, 2019;
originally announced February 2019.
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Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
Authors:
F. Cadiz,
A. Djeffal,
D. Lagarde,
A. Balocchi,
B. S. Tao,
B. Xu,
S. H. Liang,
M. Stoffel,
X. Devaux,
H. Jaffres,
J. M. George,
M. Hehn,
S. Mangin,
H. Carrere,
X. Marie,
T. Amand,
X. F. Han,
Z. G. Wang,
B. Urbaszek,
Y. Lu,
P. Renucci
Abstract:
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device wi…
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The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $μ$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field.
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Submitted 12 March, 2018;
originally announced March 2018.
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Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well
Authors:
B. S. Tao,
H. X. Yang,
Y. L. Zuo,
X. Devaux,
G. Lengaigne,
M. Hehn,
D. Lacour,
S. Andrieu,
M. Chshiev,
T. Hauet,
F. Montaigne,
S. Mangin,
X. F. Han,
Y. Lu
Abstract:
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperatu…
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Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications.
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Submitted 2 September, 2015;
originally announced April 2016.
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Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
Authors:
S. Liang,
T. T. Zhang,
P. Barate,
J. Frougier,
M. Vidal,
P. Renucci,
B. Xu,
H. Jaffrès,
J. M. George,
X. Devaux,
M. Hehn,
X. Marie,
S. Mangin,
H. Yang,
A. Hallal,
M. Chshiev,
T. Amand,
H. Liu,
D. Liu,
X. Han,
Z. Wang,
Y. Lu
Abstract:
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence pola…
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We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.
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Submitted 17 April, 2014;
originally announced April 2014.
