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Symmetry Breaking of the Persistent Spin Helix in Quantum Transport
Authors:
Pirmin J. Weigele,
D. C. Marinescu,
Florian Dettwiler,
Jiyong Fu,
Shawn Mack,
J. Carlos Egues,
David D. Awschalom,
Dominik M. Zumbühl
Abstract:
We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dre…
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We exploit the high-symmetry spin state obtained for equal Rashba and linear Dresselhaus interactions to derive a closed-form expression for the weak localization magnetoconductivity -- the paradigmatic signature of spin-orbit coupling in quantum transport. The small parameter of the theory is the deviation from the symmetry state introduced by the mismatch of the linear terms and by the cubic Dresselhaus term. In this regime, we perform quantum transport experiments in GaAs quantum wells. Top and back gates allow independent tuning of the Rashba and Dresselhaus terms in order to explore the broken-symmetry regime where the formula applies. We present a reliable two-step method to extract all parameters from fits to the new expression, obtaining excellent agreement with recent experiments. This provides experimental confirmation of the new theory, and advances spin-orbit coupling towards a powerful resource in emerging quantum technologies.
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Submitted 17 January, 2018;
originally announced January 2018.
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Stretchable persistent spin helices in GaAs quantum wells
Authors:
Florian Dettwiler,
Jiyong Fu,
Shawn Mack,
Pirmin J. Weigele,
J. Carlos Egues,
David D. Awschalom,
Dominik M. Zumbühl
Abstract:
The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly-oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba $α$ and Dresselhaus $β$ couplin…
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The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly-oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba $α$ and Dresselhaus $β$ couplings to equal $\it{fixed}$ strengths $α=β$, the total SO field becomes unidirectional thus rendering the electron spins immune to dephasing due to momentum scattering. A robust persistent spin helix (PSH) has already been experimentally realized at this singular point $α=β$. Here we employ the suppression of weak antilocalization as a sensitive detector for matched SO fields together with a technique that allows for independent electrical control over the SO couplings via top gate voltage $V_T$ and back gate voltage $V_B$. We demonstrate for the first time the gate control of $β$ and the $\it{continuous\,locking}$ of the SO fields at $α=β$, i.e., we are able to vary both $α$ and $β$ controllably and continuously with $V_T$ and $V_B$, while kee** them locked at equal strengths. This makes possible a new concept: "stretchable PSHs", i.e., helical spin patterns with continuously variable pitches $P$ over a wide parameter range. The extracted spin-diffusion lengths and decay times as a function of $α/β$ show a significant enhancement near $α/β=1$. Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication $\sim 8 - 25$ $μ$m between solid-state spin qubits.
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Submitted 20 February, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics
Authors:
F. Dettwiler,
P. Fallahi,
D. Scholz,
E. Reiger,
D. Schuh,
A. Badolato,
W. Wegscheider,
D. M. Zumbühl
Abstract:
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the do…
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We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.
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Submitted 2 April, 2014; v1 submitted 30 March, 2014;
originally announced March 2014.
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Electrical spin protection and manipulation via gate-locked spin-orbit fields
Authors:
F. Dettwiler,
J. Fu,
S. Mack,
P. J. Weigele,
J. C. Egues,
D. D. Awschalom,
D. M. Zumbühl
Abstract:
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated.…
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The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation. Here, we demonstrate broad, independent control of all relevant SO fields in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO fields while kee** both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms.
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Submitted 14 March, 2014;
originally announced March 2014.
