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Synthesis and study of fcc-Co derived from isostructural Co4N
Authors:
Seema,
Dileep Kumar,
U. P. Deshpande,
Mukul Gupta
Abstract:
This work demonstrates synthesis and study of fcc-Co derived from an isostructural Co4N. Diffusion measurements carried out in this work, reveal that N self-diffusion is the swiftest in Co4N compared to other transition metal nitrides or even the mononitride CoN. By the application of a high substrate temperature (Ts) growth or thermal annealing temperature (Ta); N diffuses out from the fcc-Co4N a…
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This work demonstrates synthesis and study of fcc-Co derived from an isostructural Co4N. Diffusion measurements carried out in this work, reveal that N self-diffusion is the swiftest in Co4N compared to other transition metal nitrides or even the mononitride CoN. By the application of a high substrate temperature (Ts) growth or thermal annealing temperature (Ta); N diffuses out from the fcc-Co4N above 573 K leaving behind a high purity fcc-Co phase. Generally, Co grows in a hcp structure and a (partial) hcp to fcc-Co transformation takes place around 700 K or above 70 GPa. The proposed route through nitridation and diffusion of N not only bring down the phase transition temperature, an impurity present in the form of hcp-Co can be avoided altogether. Oriented Co4N(111) thin films were grown using a CrN(111) template on a quartz substrate using a dc magnetron sputtering. Samples were grown at different Ts or room temperature grown Co4N samples were annealed at different Ta. Analysis using x-ray diffraction, N K-edge x-ray absorption, x-ray photoelectron and secondary ion mass spectroscopy confirmed the formation of fcc-Co4N or fcc-Co phases. It was found that Co-N bonding and N concentration get significantly reduced at a high Ts or Ta. Magnetization measurements combining ex-situ and in-situ magneto-optical Kerr effect showed differences in anisotropy and coercivity of Co4N and fcc-Co samples. Combining structural, electronic and magnetization measurements, it has been observed that a high purity fcc-Co can be conveniently derived from the isostructural Co4N aided by an exceptionally high N self-diffusion in Co4N.
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Submitted 27 May, 2021;
originally announced May 2021.
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Investigation of n-type dilute magnetic semiconductor property observed in amorphous AlNO alloy thin film incorporated with dilute nitrogen at 300K
Authors:
Deena Nath,
U. P. Deshpande,
N. V. Chandra Shekar,
Sujay Chakravarty
Abstract:
In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals th…
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In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals that in the presence of dilute nitrogen, Al prefers to react with residual oxygen to form Al2O3 while the nitrogen is incorporated in it. The stoichiometry of bulk film is Al2N0.38O3.1. Magnetic and electrical properties measurement shows that the film exhibits ntype dilute magnetic semiconductor (DMS) property at 300K. The film has low electrical resistivity of 6.3 Ω-cm and high carrier mobility of 5.7*106 cm2V-1s-1 at 300K. A density functional theory (DFT) calculation was performed to investigate the origin of observed magnetism in the film. From first-principles calculation based on DFT, it is found that for thermodynamic stability dilute nitrogen incorporated in Al2O3 preferred to sit at the interstitial site, which is responsible for observed magnetic property. Present study reported here provides a new insight to prepare rarely observed n-type DMS at room temperature by incorporating nitrogen interstitials in Al2O3, which is desirable for potential application in the field of spintronics.
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Submitted 16 October, 2020;
originally announced October 2020.
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Density and Microstructure of Amorphous Carbon Thin Films
Authors:
Prabhat Kumar,
Mukul Gupta,
U. P. Deshpande,
D. M. Phase,
V. Ganesan,
Jochen Stahn
Abstract:
In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIM…
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In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIMS consist of dense hillocks surrounded by a porous microstructure. The density of $a$-C thin films is a decisive parameter to judge their quality. Often, x-ray reflectivity (XRR) has been used to measure the density of carbon thin films. From the present work, we find that determination of density of carbon thin films, specially those with a thickness of few tens of nm, may not be accurate with XRR due to a poor scattering contrast between the film and substrate. By utilizing neutron reflectivity (NR) in the time of flight mode, a technique not commonly used for carbon thin films, we could accurately measure differences in the densities of $a$-C thin films deposited using dcMS and HiPIMS.
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Submitted 5 January, 2018;
originally announced January 2018.
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Fe and N self-diffusion in amorphous FeN: A SIMS and neutron reflectivity study
Authors:
S. Chakravarty,
M. Gupta,
A. Gupta,
S. Rajagopalan,
A. K. Balamurugan,
A. K. Tyagi,
U. P. Deshpande,
M. Horisberger,
T. Gutberlet
Abstract:
Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum…
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Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum annealing of the films at different temperatures in SIMS measurements. And a decay of the Bragg peak intensity after isothermal annealing was observed in [Fe86N14/57Fe86N14]10 multilayers in NR. Strong structural relaxation of diffusion coefficient was observed below the crystallization temperature of the amorphous phase in both measurements. It was observed from the SIMS measurements that Fe diffusion was about 2 orders of magnitude smaller compared to nitrogen at a given temperature. The NR measurements reveal that the mechanism of Fe self-diffusion is very similar to that in metal-metal type metallic glasses. The structural relaxation time for Fe and N diffusion was found comparable indicating that the obtained relaxation time essentially pertain to the structural relaxation of the amorphous phase.
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Submitted 8 July, 2008;
originally announced July 2008.
