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Electronic structure and magnetism in P4/nmm KCoO2
Authors:
Ozan Dernek,
Santosh Kumar Radha,
Jerome Jackson,
Walter R. L. Lambrecht
Abstract:
KCoO2 has been found in 1975 to exist in a unique structure with P4/nmm spacegroup with Co in a square pyramidal coordination with the Co atoms in the plane linked by O in a square arrangement reminiscent of the cuprates but its electronic structure has not been studied until now. Unlike Co atoms in LiCoO2 and NaCoO2 in octahedral coordination, which are non-magnetic band structure insulators, the…
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KCoO2 has been found in 1975 to exist in a unique structure with P4/nmm spacegroup with Co in a square pyramidal coordination with the Co atoms in the plane linked by O in a square arrangement reminiscent of the cuprates but its electronic structure has not been studied until now. Unlike Co atoms in LiCoO2 and NaCoO2 in octahedral coordination, which are non-magnetic band structure insulators, the unusual coordination of d6 Co^{3+} in KCoO2 is here shown to lead to a magnetic stabilization of an insulating structure with high magnetic moments of 4μB per Co. The electronic band structure is calculated using the quasiparticle self-consistent (QS)GW method and the basic formation of magnetic moments is explained in terms of the orbital decomposition of the bands. The optical dielectric function is calculated using the Bethe-Salpeter equation including only transitions between equal spin bands. The magnetic moments are shown to prefer an antiferromagnetic ordering along the [110] direction. Exchange interactions are calculated from the transverse spin susceptibility and a rigid spin approximation. The Néel temperature is estimated using the mean-field and Tyablikov methods and found to be between approximately 100 and 250 K. The band structure in the AFM ordering can be related to the FM ordering by band folding effects. The optical spectra are similar in both structures and show evidence of excitonic features below the quasiparticle gap of about 4 eV.
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Submitted 16 February, 2024;
originally announced February 2024.
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Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN
Authors:
Ozan Dernek,
Walter R. L. Lambrecht
Abstract:
The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(ω)$ to specific bands and…
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The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(ω)$ to specific bands and {\bf k}-points but does not include excitonic effects, while the latter does. The corresponding changes in the shape of $\varepsilon_2(ω)$ are found to be similar to those in GaN. The screened Coulomb interaction $\hat W$ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as $\varepsilon^\infty$, were calculated separately by extrapolating the wave vector dependent macroscopic $\varepsilon_M({\bf q},ω=0)$ for ${\bf q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the {\bf k}-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. The excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.
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Submitted 24 January, 2024; v1 submitted 28 November, 2023;
originally announced November 2023.
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Quaternary MgSiN_2-GaN alloy semiconductors for deep UV applications
Authors:
Ozan Dernek,
Walter R. L. Lambrecht
Abstract:
Ultra-wide direct band gap semiconductors hold great promise for deep ultraviolet opto-electronic applications. Here we evaluate the potential of MgSiN$_2$-GaN alloys for this purpose. Although MgSiN$_2$ itself has an indirect gap $\sim$0.4 eV below its direct gap of $\sim$6.5 eV, its different sign lattice mismatch from GaN in two different basal plane directions could avoid the tensile strain wh…
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Ultra-wide direct band gap semiconductors hold great promise for deep ultraviolet opto-electronic applications. Here we evaluate the potential of MgSiN$_2$-GaN alloys for this purpose. Although MgSiN$_2$ itself has an indirect gap $\sim$0.4 eV below its direct gap of $\sim$6.5 eV, its different sign lattice mismatch from GaN in two different basal plane directions could avoid the tensile strain which limits Al$_x$Ga$_{1-x}$N on GaN for high $x$. Two octet-rule preserving structures (with space groups $Pmn2_1$ and $P1n1$) of a 50% alloy of MgSiN$_2$ and GaN are investigated and are both found to have gaps larger than 4.75 eV using quasiparticle self-consistent (QS) $GW$ calculations. Both are nearly direct gap in the sense that the indirect gap is less than 0.1 eV lower than the direct gap. Their mixing energies are positive yet small, with values of 8 (31) meV/atom for $Pmn2_1$ ($P1n1$) indicating only a small driving force toward phase separation.
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Submitted 26 December, 2022; v1 submitted 1 August, 2022;
originally announced August 2022.
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Real space representation of the quasiparticle self-consistent $GW$ self-energy and its application to defect calculations
Authors:
Ozan Dernek,
Dmitry Skachkov,
Walter R. L. Lambrecht,
Mark van Schilfgaarde
Abstract:
The quasiparticle self-consistent QS$GW$ approach incorporates the corrections of the quasiparticle energies from their Kohn-Sham density functional theory (DFT) eigenvalues by means of an energy independent and Hermitian self-energy matrix usually given in the basis set of the DFT eigenstates. By expanding these into an atom-centered basis set (specifically here the linearized muffin-tin orbitals…
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The quasiparticle self-consistent QS$GW$ approach incorporates the corrections of the quasiparticle energies from their Kohn-Sham density functional theory (DFT) eigenvalues by means of an energy independent and Hermitian self-energy matrix usually given in the basis set of the DFT eigenstates. By expanding these into an atom-centered basis set (specifically here the linearized muffin-tin orbitals) a real space representation of the self-energy corrections becomes possible. We show that this representation is relatively short-ranged. This offers new opportunities to construct the self-energy of a complex system from parts of the system by a cut-and-paste method. Specifically for a point defect, represented in a large supercell, the self-eneregy can be constructed from those of the host and a smaller defect containing cell. The self-energy of the periodic host can be constructed simply from a $GW$ calculation for the primitive cell. We show for the case of the As$_\mathrm{Ga}$ in GaAs that the defect part can already be well represented by a minimal 8 atom cell and allows us to construct the self-energy for a 64 cell in good agreement with direct QS$GW$ calculations for the large cell. Using this approach to an even larger 216 atom cell shows the defect band approaches an isolated defect level. The calculations also allow to identify a second defect band which appears as a resonance near the conduction band minimum. The results on the extracted defect levels agree well with Green's function calculations for an isolated defect and with experimental data.
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Submitted 18 February, 2022;
originally announced February 2022.
