Showing 1–33 of 33 results for author: Deranlot, C

Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities

Authors: P. Laczkowski, Y. Fu, H. Yang, J. -C. Rojas-Sánchez, P. Noel, V. T. Pham, G. Zahnd, C. Deranlot, S. Collin, C. Bouard, P. Warin, V. Maurel, M. Chshiev, A. Marty, J. -P. Attané, A. Fert, H. Jaffrès, L. Vila, J. -M. George

Abstract: We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for… ▽ More We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 140405 (2017)

Chirality-mediated bistability and strong frequency downshifting of the gyrotropic resonance of a dynamically de-stiffened magnetic vortex

Authors: Manu Sushruth, Jasper Fried, Abdelmadjid Anane, Stephane Xavier, Cyrile Deranlot, Vincent Cros, Peter Metaxas

Abstract: We demonstrate an enhanced, bidirectional, in-plane magnetic field tuning of the gyrotropic resonance frequency of a magnetic vortex within a disk by introducing a flat edge. When the core is in its vicinity, the flat edge locally reduces the core's directional dynamic stiffness for movement parallel to the edge. This strongly reduces the net dynamic core stiffness, leading to the gyrotropic frequ… ▽ More We demonstrate an enhanced, bidirectional, in-plane magnetic field tuning of the gyrotropic resonance frequency of a magnetic vortex within a disk by introducing a flat edge. When the core is in its vicinity, the flat edge locally reduces the core's directional dynamic stiffness for movement parallel to the edge. This strongly reduces the net dynamic core stiffness, leading to the gyrotropic frequency being significantly less than when the core is centered (or located near the round edge). This leads to the measurable range of gyrotropic frequencies being more than doubled and also results in a clear chirality-mediated bistability of the gyrotropic resonance frequency due to what is effectively a chirality-dependence of the core's confining potential. △ Less

Submitted 25 April, 2017; originally announced April 2017.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 96, 060405 (2017)

Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature

Authors: Constance Moreau-Luchaire, Christoforos Moutafis, Nicolas Reyren, José J. Sampaio, Karim Bouzehouane, Cyrile Deranlot, P. Warnicke, C. A. F. Vaz, N. Van Horne, Karin Garcia, P. Wohlhüter, Jean-Marie George, M. Weigand, Jörg Raabe, Vincent Cros, Albert Fert

Abstract: Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriy… ▽ More Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future. △ Less

Submitted 11 July, 2016; originally announced July 2016.

Journal ref: Nature Nanotechnology, Nature Publishing Group, 2016, Graphene bilayers made easy, 11 (5)

Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core

Authors: Manu Sushruth, Jasper P. Fried, Abdelmadjid Anane, Stephane Xavier, Cyrile Deranlot, Mikhail Kostylev, Vincent Cros, Peter J. Metaxas

Abstract: Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamic… ▽ More Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamics and periodic switching of the core polarity induced by the core attaining its critical velocity. We demonstrate that core polarity switching can be impeded by displacing the core towards the disk's edge where an increased core stiffness reduces the maximum attainable core velocity. △ Less

Submitted 6 May, 2016; originally announced May 2016.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 94, 100402 (2016)

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

Authors: P. Laczkowski, H. Jaffrès, W. Savero-Torres, J. -C. Rojas-Sánchez, Y. Fu, N. Reyren, C. Deranlot, L. Notin, C. Beigné, J. -P. Attané, L. Vila, J. -M. George, A. Marty

Abstract: The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current p… ▽ More The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials. △ Less

Submitted 27 October, 2015; v1 submitted 16 July, 2015; originally announced July 2015.

Skyrmions at room temperature : From magnetic thin films to magnetic multilayers

Authors: C. Moreau-Luchaire, C. Moutafis, N. Reyren, J. Sampaio, N. Van Horne, C. A. F. Vaz, K. Bouzehouane, K. Garcia, C. Deranlot, P. Warnicke, P. Wohlhüter, J. M. George, J. Raabe, V. Cros, A. Fert

Abstract: Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interact… ▽ More Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m2 in the case of the Ir/Co/Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavir in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinsskii-Moriya interaction. This discoevry of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future. △ Less

Submitted 27 February, 2015; originally announced February 2015.

Journal ref: Nature Nanotechnology 11, 444 (2016)

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

Authors: Bruno Dlubak, Marie-Blandine Martin, Robert S. Weatherup, Heejun Yang, Cyrile Deranlot, Raoul Blume, Robert Schloegl, Albert Fert, Abdelmadjid Anane, Stephan Hofmann, Pierre Seneor, John Robertson

Abstract: We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference… ▽ More We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices. △ Less

Submitted 13 November, 2014; originally announced November 2014.

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

Authors: P. Laczkowski, J. -C. Rojas-Sánchez, W. Savero-Torres, H. Jaffrès, N. Reyren, C. Deranlot, L. Notin, C. Beigné, A. Marty, J. -P. Attané, L. Vila, J. -M. George, A. Fert

Abstract: We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length… ▽ More We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced dam**, this AuW alloy may find applications in the nearest future. △ Less

Submitted 22 August, 2014; v1 submitted 27 March, 2014; originally announced March 2014.

Journal ref: Applied Physics Letters 104, 142403 (2014)

High-performance ferroelectric memory based on fully patterned tunnel junctions

Authors: S. Boyn, S. Girod, V. Garcia, S. Fusil, S. Xavier, C. Deranlot, H. Yamada, C. Carrétéro, E. Jacquet, M. Bibes, A. Barthélémy, J. Grollier

Abstract: In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared… ▽ More In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications. △ Less

Submitted 6 February, 2014; originally announced February 2014.

Journal ref: Appl. Phys. Lett. 104, 052909 (2014)

Spin Pum** and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

Authors: J. -C. Rojas-Sánchez, N. Reyren, P. Laczkowski, W. Savero, J. -P. Attané, C. Deranlot, M. Jamet, J. -M. George, L. Vila, H. Jaffrès

Abstract: Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface d… ▽ More Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic dam** and the spin Hall effect induced voltage. △ Less

Submitted 17 March, 2014; v1 submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 3 figures (main text) and 8 pages supplementary. Published with small modifications in Phys. Rev. Lett

Journal ref: Physical Review Letters 112, 106602 (2014)

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

Authors: O. d'Allivy Kelly, A. Anane, R. Bernard, J. Ben Youssef, C. Hahn, A-H. Molpeceres, C. Carrétéro, E. Jacquet, C. Deranlot, P. Bortolotti, R. Lebourgois, J-C. Mage, G. de Loubens, O. Klein, V. Cros, A. Fert

Abstract: High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert dam** coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshap… ▽ More High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert dam** coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert dam** when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected. △ Less

Submitted 1 August, 2013; originally announced August 2013.

Journal ref: Appl. Phys. Lett. 103, 082408 (2013)

Highly efficient spin transport in epitaxial graphene on SiC

Authors: Bruno Dlubak, Marie-Blandine Martin, Cyrile Deranlot, Bernard Servet, Stéphane Xavier, Richard Mattana, Mike Sprinkle, Claire Berger, Walt A. De Heer, Frédéric Petroff, Abdelmadjid Anane, Pierre Seneor, Albert Fert

Abstract: Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on h… ▽ More Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. △ Less

Submitted 5 July, 2013; originally announced July 2013.

Journal ref: B. Dlubak et al. Nature Physics 8 (2012) 557

Monoatomic magnetic interfaces in IrMn/Cr/Co thin films probed by grazing incidence X-ray absorption spectroscopy

Authors: I. Garcia-Aguilar, N. M. Souza-Neto, G. M. Azevedo, S. Nicolodi, L. G. Pereira, J. E. Schmidt, J. Geshev, C. Deranlot, F. Petroff

Abstract: We present depth-resolved experimental results on the atomic and electronic structures of the Co-Cr interface on four IrMn/Cr/Co thin films with variable thickness of the Cr layer. Grazing incidence X-ray absorption near edge structure near the Cr K-edge was used, and an Angstrom resolved depth-profile for this layer was obtained. An interdiffusion between chromium and cobalt layers was observed i… ▽ More We present depth-resolved experimental results on the atomic and electronic structures of the Co-Cr interface on four IrMn/Cr/Co thin films with variable thickness of the Cr layer. Grazing incidence X-ray absorption near edge structure near the Cr K-edge was used, and an Angstrom resolved depth-profile for this layer was obtained. An interdiffusion between chromium and cobalt layers was observed in all films, being more pronounced for samples with thinner Cr layers, where Cr behaves as an amorphous material. This causes a contraction in coordination distances in Cr near the interface with Co. In this region, a change in the electronic structure of chromium's 3d orbitals is also observed, and it appears that Cr and Co form a covalent bond resulting in a CrCo alloy. Ab initio numerical simulations support such an interpretation of the obtained experimental results. △ Less

Submitted 9 January, 2013; originally announced January 2013.

Comments: 4 pages, 4 figures

Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys

Authors: Y. Niimi, Y. Kawanishi, D. H. Wei, C. Deranlot, H. X. Yang, M. Chshiev, T. Valet, A. Fert, Y. Otani

Abstract: We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying t… ▽ More We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities. △ Less

Submitted 10 October, 2012; v1 submitted 30 August, 2012; originally announced August 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 109, 156602 (2012)

A ferroelectric memristor

Authors: André Chanthbouala, Vincent Garcia, Ryan O. Cherifi, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Stéphane Xavier, Hiroyuki Yamada, Cyrile Deranlot, Neil D. Mathur, Manuel Bibes, Agnès Barthélémy, Julie Grollier

Abstract: Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain conf… ▽ More Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures. △ Less

Submitted 15 June, 2012; originally announced June 2012.

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

Authors: A. Bernand-Mantel, P. Seneor, K. Bouzehouane, S. Fusil, C. Deranlot, F. Petroff, A. Fert

Abstract: We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects… ▽ More We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device. △ Less

Submitted 24 November, 2011; v1 submitted 23 November, 2011; originally announced November 2011.

Hysteretic magnetic pinning and reversible resistance switching in High-Tc superconductor/ferromagnet multilayers

Authors: C. Visani, P. J. Metaxas, A. Collaudin, B. Calvet, R. Bernard, J. Briatico, C. Deranlot, K. Bouzehouane, J. E. Villegas

Abstract: We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or increase of the mixed-state resistance is observed as magnetization reversal occurs within the Co/Pt multilayer. We demonstrate that stray magnetic fields cause these… ▽ More We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or increase of the mixed-state resistance is observed as magnetization reversal occurs within the Co/Pt multilayer. We demonstrate that stray magnetic fields cause these effects via i) creation of vortices/antivortices and ii) magnetostatic pinning of vortices that are induced by the external field. △ Less

Submitted 6 July, 2011; originally announced July 2011.

Comments: to appear in Physical Review B

Journal ref: Phys. Rev. B 84, 054539 (2011)

Zero-temperature spin-glass freezing in self-organized arrays of Co nanoparticles

Authors: R. López-Ruiz, F. Luis, J. Sesé, J. Bartolomé, C. Deranlot, F. Petroff

Abstract: We study, by means of magnetic susceptibility and magnetic aging experiments, the nature of the glassy magnetic dynamics in arrays of Co nanoparticles, self-organized in N layers from N=1 (two-dimensional limit) up to N=20 (three-dimensional limit). We find no qualitative differences between the magnetic responses measured in these two limits, in spite of the fact that no spin-glass phase is expec… ▽ More We study, by means of magnetic susceptibility and magnetic aging experiments, the nature of the glassy magnetic dynamics in arrays of Co nanoparticles, self-organized in N layers from N=1 (two-dimensional limit) up to N=20 (three-dimensional limit). We find no qualitative differences between the magnetic responses measured in these two limits, in spite of the fact that no spin-glass phase is expected above T=0 in two dimensions. More specifically, all the phenomena (critical slowing down, flattening of the field-cooled magnetization below the blocking temperature and the magnetic memory induced by aging) that are usually associated with this phase look qualitatively the same for two-dimensional and three-dimensional arrays. The activated scaling law that is typical of systems undergoing a phase transition at zero temperature accounts well for the critical slowing down of the dc and ac susceptibilities of all samples. Our data show also that dynamical magnetic correlations achieved by aging a nanoparticle array below its superparamagnetic blocking temperature extend mainly to nearest neighbors. Our experiments suggest that the glassy magnetic dynamics of these nanoparticle arrays is associated with a zero-temperature spin-glass transition. △ Less

Submitted 23 March, 2011; originally announced March 2011.

Comments: 6 pages 6 figures

Journal ref: EPL 89, 67011 (2010)

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

Authors: Y. Niimi, M. Morota, D. H. Wei, C. Deranlot, M. Basletic, A. Hamzic, A. Fert, Y. Otani

Abstract: We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 1… ▽ More We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy. △ Less

Submitted 22 March, 2011; v1 submitted 20 February, 2011; originally announced February 2011.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 106, 126601 (2011)

Unravelling the role of the interface for spin injection into organic semiconductors

Authors: Clément Barraud, Pierre Seneor, Richard Mattana, Stéphane Fusil, Karim Bouzehouane, Cyrile Deranlot, Patrizio Graziosi, Luis Hueso, Ilaria Bergenti, Valentin Dediu, Frédéric Petroff, Albert Fert

Abstract: Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetores… ▽ More Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: Original version. Revised version to appear in Nature Physics.

Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque

Authors: N. Locatelli, V. V. Naletov, J. Grollier, G. de Loubens, V. Cros, C. Deranlot, C. Ulysse, G. Faini, O. Klein, A. Fert

Abstract: We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities… ▽ More We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities of the vortices. It demonstrates the interest of using coupled dynamics in order to increase the coherence of the microwave signal. Emissions exhibit a linear frequency evolution with perpendicular field, with coherence conserved even at zero magnetic field. △ Less

Submitted 28 September, 2010; v1 submitted 3 May, 2010; originally announced May 2010.

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

Authors: M. Tran, H. Jaffres, C. Deranlot, J. -M. George, A. Fert, A. Miard, A. Lemaitre

Abstract: We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a fe… ▽ More We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results. △ Less

Submitted 4 October, 2011; v1 submitted 27 October, 2008; originally announced October 2008.

High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes

Authors: Stefania Pizzini, Vojtech Uhlir, Jan Vogel, Nicolas Rougemaille, Sana Laribi, Vincent Cros, Erika Jimenez, Julio Camarero, Carsten Tieg, Edgar Bonet, Marlio Bonfim, Richard Mattana, Cyrile Deranlot, Frédric Petroff, Christian Ulysse, Giancarlo Faini, Albert Fert

Abstract: Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilaye… ▽ More Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities. △ Less

Submitted 30 January, 2009; v1 submitted 20 October, 2008; originally announced October 2008.

Comments: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003

Journal ref: Applied Physics Express 2 (2009) 023003

Coupling efficiency for phase locking of a spin transfer oscillator to a microwave current

Authors: B. Georges, J. Grollier, M. Darques, V. Cros, C. Deranlot, B. Marcilhac, A. Fert, G. Faini

Abstract: The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators i.e. p… ▽ More The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators i.e. power, linewidth, agility in current, are central to optimize the emitted power in arrays of mutually coupled STNOs. △ Less

Submitted 21 May, 2008; v1 submitted 28 February, 2008; originally announced February 2008.

Microwave excitations associated with a wavy angular dependence of the spin transfer torque : model and experiments

Authors: O. Boulle, V. Cros, J. Grollier, L. G. Pereira, C. Deranlot, F. Petroff, G. Faini, J. Barnas, A. Fert

Abstract: The spin transfer torque (STT) can lead to steady precession of magnetization without any external applied field in magnetic spin valve where the magnetic layer have very different spin diffusion length. This effect is associated with an unusual angular dependence of the STT, called "wavy" (WAD-STT), predicted in the frame of diffusive models of spin transfer. In this article, we present a compl… ▽ More The spin transfer torque (STT) can lead to steady precession of magnetization without any external applied field in magnetic spin valve where the magnetic layer have very different spin diffusion length. This effect is associated with an unusual angular dependence of the STT, called "wavy" (WAD-STT), predicted in the frame of diffusive models of spin transfer. In this article, we present a complete experimental characterization of the magnetization dynamics in the presence of a WAD-STT. The results are compared to the prediction of the magnetization dynamics obtained by single domain magnetic simulations (macrospin approximation). The macrospin simulations well reproduced the main static and dynamical experimental features (phase diagram, R(I) curves, dependence of frequency with current and field) and suggest that the dynamical excitations observed experimentally are associated with a large angle out-of-plane precession mode. The present work validates the diffusive models of the spin transfer and underlines the role of the spin accumulation and the spin relaxation effects on the STT. △ Less

Submitted 4 December, 2007; originally announced December 2007.

Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, F. Ott, B. Dupe, X. -H. Zhu, S. Petit, S. Fusil, C. Deranlot, K. Bouzehouane, A. Barthelemy

Abstract: We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to m… ▽ More We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoff's model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3. △ Less

Submitted 10 October, 2007; originally announced October 2007.

Comments: submitted to Phys. Rev. Lett

Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers

Authors: A. V. Ramos, M. -J. Guittet, J. -B. Moussy, R. Mattana, C. Deranlot, F. Petroff, C. Gatel

Abstract: We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurement… ▽ More We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurements reveal significant TMR values of -18% at 2 K and -3% at 290 K. In addition, the TMR ratio follows a unique bias voltage dependence that has been theoretically predicted to be the signature of spin filtering in MTJs containing magnetic barriers. CoFe2O4 tunnel barriers therefore provide a model system to investigate spin filtering in a wide range of temperatures. △ Less

Submitted 27 July, 2007; v1 submitted 26 July, 2007; originally announced July 2007.

Comments: 6 pages, 3 figures

High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives

Authors: G. Herranz, M. Basletic, M. Bibes, C. Carretero, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, A. Hamzic, J. -M. Broto, A. Barthelemy, A. Fert

Abstract: We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experi… ▽ More We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics. △ Less

Submitted 19 April, 2007; originally announced April 2007.

Comments: 4 pages, 4 figures. Accepted for publication in Phys. Rev. Lett

Shaped angular dependence of the spin transfer torque and microwave generation without magnetic field

Authors: O. Boulle, V. Cros, J. Grollier, L. G. Pereira, C. Deranlot, F. Petroff, G. Faini, J. Barnas, A. Fert

Abstract: The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on specially designed nanopillars for which a non-standard angular dependence of the spin transfer torque (wavy variation) is predicted by theoretical models. We ob… ▽ More The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on specially designed nanopillars for which a non-standard angular dependence of the spin transfer torque (wavy variation) is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field, as this is also predicted by simulation with such a wavy angular dependence of the torque. This type of non-standard nanopillars can represent an interesting way for the implementation of spin transfer oscillators since they are able to generate microwave oscillations without applied magnetic field. We also emphasize the theoretical implications of our results on the angular dependence of the torque. △ Less

Submitted 3 April, 2007; originally announced April 2007.

Electrical spin injection into p-doped quantum dots through a tunnel barrier

Authors: L. Lombez, P. Renucci, P. Gallo, P. F. Braun, H. Carrere, P. H. Binh, X. Marie, T. Amand, B. Urbaszek, J. L. Gauffier, T. Camps, A. Arnoult, C. Fontaine, C. Deranlot, R. Mattana, H. Jaffres, J. M. George

Abstract: We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminesc… ▽ More We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the p-doped quantum dots are characterized independently by optical measurements (time and polarization resolved photoluminescence). The measured electroluminescence circular polarization is about 15 % at low temperature in a 2T magnetic field, leading to an estimation of the electrical spin injection yield of 35%. Moreover, this electroluminescence circular polarization is stable up to 70 K. △ Less

Submitted 8 January, 2007; v1 submitted 16 October, 2006; originally announced October 2006.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett., 87, 252115 (2005)

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, S. Cherifi, F. Nolting, B. Warot-Fonrose, S. Fusil, G. Herranz, C. Deranlot, E. Jacquet, K. Bouzehouane, A. Barthelemy

Abstract: We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferro… ▽ More We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training. △ Less

Submitted 27 September, 2006; v1 submitted 21 July, 2006; originally announced July 2006.

Comments: 15 pages, 4 figures

Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures

Authors: G. Herranz, M. Basletic, M. Bibes, C. Carretero, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, J. -L. Maurice, A. Hamzic, J. -P. Contour, A. Barthelemy, A. Fert

Abstract: LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigat… ▽ More LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the do** of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices. △ Less

Submitted 7 June, 2006; originally announced June 2006.

Comments: 17 pages, 3 figures

Spin injection in a single metallic nanoparticle: a step towards nanospintronics

Authors: A. Bernand-Mantel, P. Seneor, N. Lidgi, M. Munoz, V. Cros, S. Fusil, K. Bouzehouane, C. Deranlot, A. Vaures, F. Petroff, A. Fert

Abstract: We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a no… ▽ More We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a non magnetic cluster. △ Less

Submitted 19 January, 2006; originally announced January 2006.

Comments: 3 pages