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Robust Parallel Laser Driving of Quantum Dots for Multiplexing of Quantum Light Sources
Authors:
Ajan Ramachandran,
Grant R. Wilbur,
Reuble Mathew,
Allister Mason,
Sabine ONeal,
Dennis G. Deppe,
Kimberley C. Hall
Abstract:
Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms hav…
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Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms have large dipole moments and a quantum confined energy level structure, enabling the realization of single photon sources with high repetition rates and high single photon purity. Quantum dots may also be triggered using a laser pulse for on-demand operation. The naturally-occurring size variations in ensembles of quantum dots offers the potential to increase the bandwidth of quantum communication systems through wavelength-division multiplexing, but conventional laser triggering schemes based on Rabi rotations are ineffective when applied to inequivalent emitters. Here we report the demonstration of the simultaneous triggering of >10 quantum dots using adiabatic rapid passage. We show that high-fidelity quantum state inversion is possible in a system of quantum dots with a 15~meV range of optical transition energies using a single broadband, chirped laser pulse, laying the foundation for high-bandwidth, multiplexed quantum networks.
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Submitted 28 November, 2023;
originally announced November 2023.
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Spectrally-modified frequency-swept pulses for optically-driven quantum light sources
Authors:
G. R. Wilbur,
A. Binai-Motlagh,
A. Clarke,
A. Ramachandran,
N. Milson,
J. P. Healey,
S. O'Neal,
D. G. Deppe,
K. C. Hall
Abstract:
We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of th…
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We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of the adiabaticity condition to variations in the experimental parameters. Our resonant driving approach could be combined with spectral filtering of the scattered pump light and photonic devices for enhanced collection efficiency to realize simultaneous high indistinguishability and brightness in single photon source applications.
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Submitted 2 March, 2022;
originally announced March 2022.
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Suppression of Decoherence tied to Electron-Phonon Coupling in Telecom-Compatible Quantum Dots: Low-threshold Reappearance Regime for Quantum State Inversion
Authors:
A. Ramachandran,
G. R. Wilbur,
S. O'Neal,
D. G. Deppe,
K. C. Hall
Abstract:
We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$μ$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of th…
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We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$μ$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of the QD, we demonstrate a four-fold reduction in the threshold pulse area required to enter the decoupled regime for exciton inversion using adiabatic rapid passage (ARP). Our calculations of the quantum state dynamics provide good agreement with our experimental results and indicate that the symmetry of the QD wave function provides an additional means to engineer the electron-phonon interaction. Our findings will support the development of solid-state quantum emitters in future distributed quantum networks using semiconductor QDs.
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Submitted 4 December, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors
Authors:
G. Zhao,
Y. Zhang,
D. G. Deppe,
K. Konthasinghe,
A. Muller
Abstract:
We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain mediu…
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We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($λ_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$.
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Submitted 25 August, 2012;
originally announced August 2012.
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Coherently driven non-classical light emission from a quantum dot
Authors:
A. Muller,
E. B. Flagg,
P. Bianucci,
D. G. Deppe,
W. Ma,
J. Zhang,
G. J. Salamo,
C. K. Shih
Abstract:
Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have relied on incoherent pum**, which limits the desirable properties of the emission. In contrast, coherent excitation was recognized to be necessary fo…
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Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have relied on incoherent pum**, which limits the desirable properties of the emission. In contrast, coherent excitation was recognized to be necessary for providing both improved photon indistinguishability and high efficiency, and offers the quantum control capabilities required for basic qubit manipulations. Here we achieve, for the first time, resonant and coherent excitation of a quantum dot with simultaneous collection of the non-classical photon emission. Second-order correlation measurements show the unique signature of a coherently-driven two-level quantum emitter: the photon statistics become oscillatory at high driving fields, reflecting the coherent evolution of the excitonic ground state of the quantum dot.
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Submitted 25 July, 2007;
originally announced July 2007.
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Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity
Authors:
Andreas Muller,
Edward B. Flagg,
Pablo Bianucci,
Xiaoyong Wang,
Dennis G. Deppe,
Wenquan Ma,
Jiayu Zhang,
Min Xiao,
Gregory J. Salamo,
Chih-Kang Shih
Abstract:
We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emerg…
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We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emergence of oscillations in the first-order correlation function of the fluorescence, g(t), as measured by interferometry. The measurements correspond to a Mollow triplet with a Rabi splitting of up to 13.3 micro eV. Second-order-correlation measurements further confirm non-classical light emission.
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Submitted 4 July, 2007;
originally announced July 2007.
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Efficient electron spin detection with positively charged quantum dots
Authors:
K. Gundogdu,
K. C. Hall,
Thomas F. Boggess,
O. B. Shchekin,
D. G. Deppe
Abstract:
We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggest…
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We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode (LED) spin detectors for spintronics applications.
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Submitted 2 November, 2003;
originally announced November 2003.
