Showing 1–1 of 1 results for author: Denlinger, M M J

Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy

Authors: H. Kohlstedt, A. Petraru, M. Meier J. Denlinger, J. Guo, Y. Wanli, A. Scholl, B. Freelon, T. Schneller, R. Waser, P. Yu, R. Ramesh, T. Learmonth, P. -A. Glans, K. E. Smith

Abstract: We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr… ▽ More We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected] △ Less

Submitted 23 October, 2008; originally announced October 2008.