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Quasiparticle and superfluid dynamics in Magic-Angle Graphene
Authors:
Elías Portolés,
Marta Perego,
Pavel A. Volkov,
Mathilde Toschini,
Yana Kemna,
Alexandra Mestre-Torà,
Giulia Zheng,
Artem O. Denisov,
Folkert K. de Vries,
Peter Rickhaus,
Takashi Taniguchi,
Kenji Watanabe,
J. H. Pixley,
Thomas Ihn,
Klaus Ensslin
Abstract:
Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconve…
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Magic-Angle Twisted Bilayer Graphene shows a wide range of correlated phases which are electrostatically tunable. Despite a growing knowledge of the material, there is yet no consensus on the microscopic mechanisms driving its superconducting phase. In particular, elucidating the symmetry and formation mechanism of the superconducting phase may provide key insights for the understanding of unconventional, strongly coupled and topological superconductivity. A major obstacle to progress in this direction is that key thermodynamic properties, such as specific heat, electron-phonon coupling and superfluid stiffness, are extremely challenging to measure due to the 2D nature of the material and its relatively low energy scales. Here, we use a gate-defined, radio frequency-biased, Josephson junction to probe the electronic dynamics of magic-angle twisted bilayer graphene (MATBG). We reveal both the electronic quasiparticle dynamics, driven by their thermalization through phonon scattering, as well as the condensate dynamics, driven by the inertia of Cooper pairs. From these properties we recover the evolution of thermalization rates, and the superfluid stiffness across the phase diagram. Our findings favor an anisotropic or nodal pairing state and allow to estimate the strength of electron-phonon coupling. These results contribute to understanding the underlying mechanisms of superconductivity in MATBG while establishing an easy-to-implement method for characterizing thermal and superfluid properties of superconducting 2D materials.
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Submitted 10 May, 2024;
originally announced May 2024.
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Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
Authors:
Efe Cakar,
H. Ekmel Ercan,
Gordian Fuchs,
Artem O. Denisov,
Christopher R. Anderson,
Mark F. Gyure,
Jason R. Petta
Abstract:
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum…
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A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlap** gate structure combined with an approximate solution to the three-dimensional Schrödinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected.
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Submitted 6 May, 2024;
originally announced May 2024.
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Ultra-long relaxation of a Kramers qubit formed in a bilayer graphene quantum dot
Authors:
Artem O. Denisov,
Veronika Reckova,
Solenn Cances,
Max J. Ruckriegel,
Michele Masseroni,
Christoph Adam,
Chuyao Tong,
Jonas D. Gerber,
Wei Wister Huang,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin,
Hadrien Duprez
Abstract:
The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubi…
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The intrinsic valley degree of freedom makes bilayer graphene a unique platform for emerging types of semiconducting qubits. The single-carrier quantum dot ground state exhibits a two-fold degeneracy where the two states have opposite spin and valley quantum numbers. By breaking the time-reversal symmetry of this ground state with an out-of-plane magnetic field, a novel type of qubit (Kramers qubit), encoded in the two-dimensional spin-valley subspace, becomes accessible. The Kramers qubit is robust against known spin- and valley-mixing mechanisms, as it requires a simultaneous change of both quantum numbers, potentially resulting in long relaxation and coherence times. We measure the relaxation time of a single carrier in the excited states of a bilayer graphene quantum dot at small ($\sim \mathrm{mT}$) and zero magnetic fields. We demonstrate ultra-long spin-valley relaxation times of the Kramers qubit exceeding $30~\mathrm{s}$, which is about two orders of magnitude longer than the spin relaxation time of $400~\mathrm{ms}$. The demonstrated high-fidelity single-shot readout and long relaxation times are the foundation for novel, long-lived semiconductor qubits.
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Submitted 12 March, 2024;
originally announced March 2024.
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Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
Authors:
Artem O. Denisov,
Gordian Fuchs,
Seong W. Oh,
Jason R. Petta
Abstract:
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM). Charge stability diagrams are obtained in the phase response of the reflected rf signal. We demonstrate single-electron dot-to-lead and dot-to-dot charge transi…
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We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM). Charge stability diagrams are obtained in the phase response of the reflected rf signal. We demonstrate single-electron dot-to-lead and dot-to-dot charge transitions with a signal-to-noise ratio (SNR) of 2 and integration time of $τ~=~2.7~\mathrm{ms}$ and $τ~=~6.4~\mathrm{ms}$, respectively. The charge sensing SNR compares favorably with results obtained on conventional devices. Moreover, the small size of the floating gates largely eliminates the coupling to parasitic charge traps that can complicate the interpretation of the dispersive charge sensing data.
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Submitted 9 May, 2023;
originally announced May 2023.
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Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate
Authors:
Artem O. Denisov,
Gordian Fuchs,
Seong W. Oh,
Jason R. Petta
Abstract:
We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by withdrawing the tip. Biasing with an AFM tip allows us to reduce the size of a quantum dot floating gat…
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We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by withdrawing the tip. Biasing with an AFM tip allows us to reduce the size of a quantum dot floating gate electrode down to $\sim100~\mathrm{nm}$. Measurements of the conductance through a quantum dot formed beneath the floating gate indicate that its charge changes in discrete steps. From the statistics of the single-electron leakage events, we determine the floating gate leakage resistance $R \sim 10^{19}~ \mathrm{Ohm}$ - a value immeasurable by conventional means.
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Submitted 15 February, 2023;
originally announced February 2023.
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Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
Authors:
Artem O. Denisov,
Seong W. Oh,
Gordian Fuchs,
Adam R. Mills,
Pengcheng Chen,
Christopher R. Anderson,
Mark F. Gyure,
Arthur W. Barnard,
Jason R. Petta
Abstract:
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution of the local electronic density of states, but often at the expense of speed. Working to combine the spatial resolution and energy sensitivity of sc…
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Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution of the local electronic density of states, but often at the expense of speed. Working to combine the spatial resolution and energy sensitivity of scanning probe microscopy with the speed of microwave measurements, we couple a metallic probe tip to a Si/SiGe double quantum dot that is integrated with a local charge detector. We first demonstrate that a dc-biased tip can be used to change the charge occupancy of the double dot. We then apply microwave excitation through the scanning tip to drive photon-assisted tunneling transitions in the double dot. We infer the double dot energy level diagram from the frequency and detuning dependence of the photon-assisted tunneling resonance condition. These measurements allow us to resolve $\sim$65 $μ$eV excited states, an energy scale consistent with typical valley splittings in Si/SiGe. Future extensions of this approach may allow spatial map** of the valley splitting in Si devices, which is of fundamental importance for spin-based quantum processors.
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Submitted 11 March, 2022;
originally announced March 2022.
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Cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at milli-Kelvin temperatures
Authors:
Seong Woo Oh,
Artem O. Denisov,
Pengcheng Chen,
Jason R. Petta
Abstract:
Silicon can be isotopically enriched, allowing for the fabrication of highly coherent semiconductor spin qubits. However, the conduction band of bulk Si exhibits a six-fold valley degeneracy, which may adversely impact the performance of silicon quantum devices. To date, the spatial characterization of valley states in Si remains limited. Moreover, techniques for probing valley states in functiona…
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Silicon can be isotopically enriched, allowing for the fabrication of highly coherent semiconductor spin qubits. However, the conduction band of bulk Si exhibits a six-fold valley degeneracy, which may adversely impact the performance of silicon quantum devices. To date, the spatial characterization of valley states in Si remains limited. Moreover, techniques for probing valley states in functional electronic devices are needed. We describe here a cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at mK temperatures. The microscope is based on the Pan-walker design, with coarse positioning piezo stacks and a fine scanning piezo tube. A tungsten microscope tip is attached to a tuning fork for active control of the tip-to-sample distance. To reduce vibration noise from the pulse tube cooler, we utilize both active and passive vibration isolation mechanisms, and achieve a root-mean-square noise in $z$ of $\sim$ 2 nm. Our microscope is designed to characterize fully functioning Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices. As a proof of concept, we use the microscope to manipulate the charge occupation of a Si quantum dot, opening up a range of possibilities for the exploration of quantum devices and materials.
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Submitted 12 May, 2021;
originally announced May 2021.
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Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot n…
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Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot noise measurement delivers a missing puzzle piece in NSN InAs nanowire-based devices. We demonstrate that in a trivial superconducting phase quasiparticle response is practically charge-neutral, dominated by the heat transport component with a thermal conductance being on the order of conductance quantum. This is qualitatively explained by numerous Andreev reflections of a diffusing quasiparticle, that makes its charge completely uncertain. Consistently, strong fluctuations and sign reversal are observed in the sub-gap nonlocal conductance, including occasional Andreev rectification signals. Our results prove conductance and noise as complementary measurements to characterize quasiparticle transport in superconducting proximity devices.
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Submitted 2 August, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Heat-mode excitation in a proximity superconductor
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much…
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Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of $G_\mathrm{th}\sim e^2/h$, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.
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Submitted 25 April, 2022; v1 submitted 17 June, 2020;
originally announced June 2020.
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Spatial and energy resolution of electronic states by shot noise
Authors:
E. S. Tikhonov,
A. O. Denisov,
S. U. Piatrusha,
I. N. Khrapach,
J. P. Pekola,
B. Karimi,
R. N. Jabdaraghi,
V. S. Khrapai
Abstract:
Shot noise measurements are widely used for the characterization of nonequilibrium configurations in electronic conductors. The recently introduced quantum tomography approach was implemented for the studies of electronic wavefunctions of few-electron excitations created by periodic voltage pulses in phase-coherent ballistic conductors based on the high-quality GaAs two-dimensional electron gas. S…
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Shot noise measurements are widely used for the characterization of nonequilibrium configurations in electronic conductors. The recently introduced quantum tomography approach was implemented for the studies of electronic wavefunctions of few-electron excitations created by periodic voltage pulses in phase-coherent ballistic conductors based on the high-quality GaAs two-dimensional electron gas. Still relying on the manifestation of Fermi correlations in noise, we focus on the simpler and more general approach beneficial for the local measurements of energy distribution (ED) in electronic systems with arbitrary excitations with well-defined energies and random phases. Using biased diffusive metallic wire as a testbed, we demonstrate the power of this approach and extract the well-known double-step ED from the shot noise of a weakly coupled tunnel junction. Our experiment paves the way for the local measurements of generic nonequilibrium configurations applicable to virtually any conductor.
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Submitted 17 July, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
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Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Authors:
A. V. Bubis,
A. O. Denisov,
S. U. Piatrusha,
I. E. Batov,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmüller,
V. S. Khrapai
Abstract:
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap va…
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We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $Δ_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.
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Submitted 1 May, 2017;
originally announced May 2017.
