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The 4D Camera: an 87 kHz direct electron detector for scanning/transmission electron microscopy
Authors:
Peter Ercius,
Ian J. Johnson,
Philipp Pelz,
Benjamin H. Savitzky,
Lauren Hughes,
Hamish G. Brown,
Steven E. Zeltmann,
Shang-Lin Hsu,
Cassio C. S. Pedroso,
Bruce E. Cohen,
Ramamoorthy Ramesh,
David Paul,
John M. Joseph,
Thorsten Stezelberger,
Cory Czarnik,
Matthew Lent,
Erin Fong,
Jim Ciston,
Mary C. Scott,
Colin Ophus,
Andrew M. Minor,
and Peter Denes
Abstract:
We describe the development, operation, and application of the 4D Camera -- a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at approximately 480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10 - 700…
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We describe the development, operation, and application of the 4D Camera -- a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at approximately 480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10 - 700 Gigabyte-sized raw datasets. The back illuminated detector provides the ability to detect single electron events at accelerating voltages from 30 - 300 keV. Through electron counting, the resulting sparse data sets are reduced in size by 10 - 300x compared to the raw data, and open-source sparsity-based processing algorithms offer rapid data analysis. The high frame rate allows for large and complex 4D-STEM experiments to be accomplished with typical STEM scanning parameters.
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Submitted 19 May, 2023;
originally announced May 2023.
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Design of Electrostatic Aberration Correctors for Scanning Transmission Electron Microscopy
Authors:
Stephanie M. Ribet,
Steven E. Zeltmann,
Karen C. Bustillo,
Rohan Dhall,
Peter Denes,
Andrew M. Minor,
Roberto dos Reis,
Vinayak P. Dravid,
Colin Ophus
Abstract:
In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole lenses, but th…
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In a scanning transmission electron microscope (STEM), producing a high-resolution image generally requires an electron beam focused to the smallest point possible. However, the magnetic lenses used to focus the beam are unavoidably imperfect, introducing aberrations that limit resolution. Modern STEMs overcome this by using hardware aberration correctors comprised of many multipole lenses, but these devices are complex, expensive, and can be difficult to tune. We demonstrate a design for an electrostatic phase plate that can act as an aberration corrector. The corrector is comprised of annular segments, each of which is an independent two-terminal device that can apply a constant or ramped phase shift to a portion of the electron beam. We show the improvement in image resolution using an electrostatic corrector. Engineering criteria impose that much of the beam within the probe-forming aperture be blocked by support bars, leading to large probe tails for the corrected probe that sample the specimen beyond the central lobe. We also show how this device can be used to create other STEM beam profiles such as vortex beams and beams with a high degree of phase diversity, which improve information transfer in ptychographic reconstructions.
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Submitted 16 March, 2023;
originally announced March 2023.
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Big Industry Engagement to Benefit HEP: Microelectronics Support from Large CAD Companies
Authors:
Gabriella Carini,
Marcel Demarteau,
Peter Denes,
Angelo Dragone,
Farah Fahim,
Carl Grace,
Shaorui Li,
F Mitch Newcomer,
Brianna Yi
Abstract:
Microelectronics development is critical to a wide number of DOE projects and mission space. Creating Helpful Incentives to Produce Semiconductors (CHIPS) and manufacturing Application Specific Integrated Circuits (ASIC) are important to DOE, so the infrastructure that allows DOE to carry out its mission needs to exist. This paper discusses the current initiatives and recommends a business model t…
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Microelectronics development is critical to a wide number of DOE projects and mission space. Creating Helpful Incentives to Produce Semiconductors (CHIPS) and manufacturing Application Specific Integrated Circuits (ASIC) are important to DOE, so the infrastructure that allows DOE to carry out its mission needs to exist. This paper discusses the current initiatives and recommends a business model to build an ecosystem for microelectronics design for DOE which includes three main building blocks: the Computer Aided Design (CAD) - Electronic Design Automation (EDA) design tools, basic design IPs, and access to semiconductor fabrication facilities.
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Submitted 16 March, 2022;
originally announced March 2022.
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Small footprint optoelectrodes for simultaneous readout and passive light localization by the use of ring resonators
Authors:
Vittorino Lanzio,
Gregory Telian,
Alexander Koshelev,
Paolo Micheletti,
Gianni Presti,
Elisa D`Arpa,
Paolo De Martino,
Monica Lorenzon,
Peter Denes,
Melanie West,
Simone Sassolini,
Scott Dhuey,
Hillel Adesnik,
Stefano Cabrini
Abstract:
Neural probes are in vivo invasive devices that combine electrophysiology and optogenetics to gain insight into how the brain operates, down to the single neuron and its network activity. Their integration of stimulation sites and sensors allows for recording and manipulating neurons` activity with a high spatiotemporal resolution. State of the art probes are limited by tradeoffs between their lat…
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Neural probes are in vivo invasive devices that combine electrophysiology and optogenetics to gain insight into how the brain operates, down to the single neuron and its network activity. Their integration of stimulation sites and sensors allows for recording and manipulating neurons` activity with a high spatiotemporal resolution. State of the art probes are limited by tradeoffs between their lateral dimension, the number of sensors, and the ability to selectively access independent stimulation sites. Here, we realize a highly scalable probe that features a three-dimensional integration of small footprint arrays of sensors and nanophotonic circuits and scales the density of sensors per cross-section by one order of magnitude with respect to state of the art devices. For the first time, we overcome the spatial limit of the nanophotonic circuit by coupling only one waveguide to numerous optical ring resonators as passive nanophotonic switches. With our strategy, we achieve accurate on-demand light localization while avoiding spatial demanding bundles of waveguides and demonstrate the feasibility of a proof of concept device and its additional scalability, towards high resolution and low damaging neural optoelectrodes.
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Submitted 2 September, 2020;
originally announced September 2020.
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Characterization of the ePix100a and the FastCCD Semiconductor Detectors for the European XFEL
Authors:
I. Klačková,
G. Blaj,
P. Denes,
A. Dragone,
S. Göde,
S. Hauf,
F. Januschek,
J. Joseph,
M. Kuster
Abstract:
The European X-ray Free Electron Laser (EuXFEL) is a research facility providing spatially coherent X-ray flashes in the energy range from 0.25keV to 25keV of unprecedented brilliance and with unique time structure: X-ray pulses with a 4.5 MHz repetition rate arranged in trains with 2700 pulses every 100 ms. The facility operates three photon beamlines called SASE 1, SASE 2 and SASE 3. Each of the…
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The European X-ray Free Electron Laser (EuXFEL) is a research facility providing spatially coherent X-ray flashes in the energy range from 0.25keV to 25keV of unprecedented brilliance and with unique time structure: X-ray pulses with a 4.5 MHz repetition rate arranged in trains with 2700 pulses every 100 ms. The facility operates three photon beamlines called SASE 1, SASE 2 and SASE 3. Each of the beamlines is hosting two scientific experiments. The SASE 1 beamline started its user operation in September 2017, followed by successful first lasing at the SASE 2 beamline in May 2018. Early user experiments are planned to start in 2019 at this beamline, while early user experiments for the SASE 3 beamline are scheduled for the end of 2018. The quality of the experimental data will gain substantial benefits from an accurate characterization and calibration of the X-ray detectors. Supplementing high repetition rate detectors at MHz speeds, slower detectors such as the ePix100a and the FastCCD will be operated at the train repetition rate of 10 Hz. These 2D silicon pixelized detectors use fast parallel column-wise readout implemented as a CCD or as a hybrid pixel detector. In the following, characterization and analysis approaches for the FastCCD and the ePix100a detectors are discussed and the performance of the detectors is evaluated using appropriate state-of-the-art analysis techniques.
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Submitted 12 December, 2018; v1 submitted 4 December, 2018;
originally announced December 2018.
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Three dimensional localization of nanoscale battery reactions using soft X-ray tomography
Authors:
Young-Sang Yu,
Maryam Farmand,
Chunjoong Kim,
Yi** Liu,
Clare P. Grey,
Fiona C. Strobridge,
Tolek Tyliszczak,
Rich Celestre,
Peter Denes,
John Joseph,
Harinarayan Krishnan,
Filipe R. N. C. Maia,
A. L. David Kilcoyne,
Stefano Marchesini,
Talita Perciano Costa Leite,
Tony Warwick,
Howard Padmore,
Jordi Cabana,
David A. Shapiro
Abstract:
Battery function is determined by the efficiency and reversibility of the electrochemical phase transformations at solid electrodes. The microscopic tools available to study the chemical states of matter with the required spatial resolution and chemical specificity are intrinsically limited when studying complex architectures by their reliance on two dimensional projections of thick material. Here…
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Battery function is determined by the efficiency and reversibility of the electrochemical phase transformations at solid electrodes. The microscopic tools available to study the chemical states of matter with the required spatial resolution and chemical specificity are intrinsically limited when studying complex architectures by their reliance on two dimensional projections of thick material. Here, we report the development of soft X-ray ptychographic tomography, which resolves chemical states in three dimensions at 11-nm spatial resolution. We study an ensemble of nano-plates of lithium iron phosphate (LixFePO4) extracted from a battery electrode at 50% state of charge. Using a set of nanoscale tomograms, we quantify the electrochemical state and resolve phase boundaries throughout the volume of individual nano-particles. These observations reveal multiple reaction points and intra-particle heterogeneity that highlights the importance of electrical connectivity, providing novel insight to the design of the next generation of high-performance devices.
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Submitted 9 March, 2018; v1 submitted 4 November, 2017;
originally announced November 2017.
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Performance of the LBNL FastCCD for the European XFEL
Authors:
Friederike Januschek,
Ivana Klackova,
Nord Andresen,
Peter Denes,
Steffen Hauf,
John Joseph,
Markus Kuster,
Craig Tindall
Abstract:
The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berke…
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The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berkeley National Lab (LBNL) specifically for the XFEL.EU requirements. Its sensor has 1920$\times$960 pixels of 30\,$μ$m $\times$30\,$μ$m size with a beam hole in the middle of the sensor. The camera can be operated in full frame and frame store mode. With the FastCCD a frame rate of up to 120~fps can be achieved, but at XFEL.EU the camera settings are optimized for the 10\,Hz XFEL bunch-mode. The detector has been delivered to XFEL.EU. Results of the performance tests and calibration done using the XFEL.EU detector calibration infrastructure are presented quantifying noise level, gain and energy resolution.
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Submitted 12 December, 2016;
originally announced December 2016.
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Femtosecond X-ray magnetic circular dichroism absorption spectroscopy at an X-ray free electron laser
Authors:
Daniel J. Higley,
Konstantin Hirsch,
Georgi L. Dakovski,
Emmanuelle Jal,
Edwin Yuan,
Tianmin Liu,
Alberto A. Lutman,
James P. MacArthur,
Elke Arenholz,
Zhao Chen,
Giacomo Coslovich,
Peter Denes,
Patrick W. Granitzka,
Philip Hart,
Matthias C. Hoffmann,
John Joseph,
Loïc Le Guyader,
Ankush Mitra,
Stefan Moeller,
Hendrik Ohldag,
Matthew Seaberg,
Padraic Shafer,
Joachim Stöhr,
Arata Tsukamoto,
Heinz-Dieter Nuhn
, et al. (3 additional authors not shown)
Abstract:
X-ray magnetic circular dichroism spectroscopy using an X-ray free electron laser is demonstrated with spectra over the Fe L$_{3,2}$-edges. This new ultrafast time-resolved capability is then applied to a fluence-dependent study of all-optical magnetic switching dynamics of Fe and Gd magnetic sublattices in a GdFeCo thin film above its magnetization compensation temperature. At the magnetic switch…
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X-ray magnetic circular dichroism spectroscopy using an X-ray free electron laser is demonstrated with spectra over the Fe L$_{3,2}$-edges. This new ultrafast time-resolved capability is then applied to a fluence-dependent study of all-optical magnetic switching dynamics of Fe and Gd magnetic sublattices in a GdFeCo thin film above its magnetization compensation temperature. At the magnetic switching fuence, we corroborate the existence of a transient ferromagnetic-like state. The timescales of the dynamics, however, are longer than previously observed below the magnetization compensation temperature. Above and below the switching fluence range, we observe secondary demagnetization with about 5 ps timescales. This indicates that the spin thermalization takes longer than 5 ps.
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Submitted 23 November, 2015;
originally announced November 2015.
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Real-time manifestation of strongly coupled spin and charge order parameters in stripe-ordered nickelates via time-resolved resonant x-ray diffraction
Authors:
Y. D. Chuang,
W. S. Lee,
Y. F. Kung,
A. P. Sorini,
B. Moritz,
R. G. Moore,
L. Patthey,
M. Trigo,
D. H. Lu,
P. S. Kirchmann,
M. Yi,
O. Krupin,
M. Langner,
Y. Zhu,
S. Y. Zhou,
D. A. Reis,
N. Huse,
J. S. Robinson,
R. A. Kaindl,
R. W. Schoenlein,
S. L. Johnson,
M. Forst,
D. Doering,
P. Denes,
W. F. Schlotter
, et al. (5 additional authors not shown)
Abstract:
We investigate the order parameter dynamics of the stripe-ordered nickelate, La$_{1.75}$Sr$_{0.25}$NiO$_4$, using time-resolved resonant X-ray diffraction. In spite of distinct spin and charge energy scales, the two order parameters' amplitude dynamics are found to be linked together due to strong coupling. Additionally, the vector nature of the spin sector introduces a longer re-orientation time…
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We investigate the order parameter dynamics of the stripe-ordered nickelate, La$_{1.75}$Sr$_{0.25}$NiO$_4$, using time-resolved resonant X-ray diffraction. In spite of distinct spin and charge energy scales, the two order parameters' amplitude dynamics are found to be linked together due to strong coupling. Additionally, the vector nature of the spin sector introduces a longer re-orientation time scale which is absent in the charge sector. These findings demonstrate that the correlation linking the symmetry-broken states does not unbind during the non-equilibrium process, and the time scales are not necessarily associated with the characteristic energy scales of individual degrees of freedom.
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Submitted 19 February, 2013;
originally announced February 2013.
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R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging
Authors:
M. Battaglia,
C. Da Via,
D. Bortoletto,
R. Brenner,
M. Campbell,
P. Collins,
G. F. Dalla Betta,
P. Denes,
H. Graafsma,
I. M. Gregor,
A. Kluge,
V. Manzari,
C. Parkes,
V. Re,
P. Riedler,
G. Rizzo,
W. Snoeys,
M. Winter
Abstract:
This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science.
This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science.
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Submitted 1 August, 2012;
originally announced August 2012.
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Phase Fluctuations and the Absence of Topological Defects in Photo-excited Charge Ordered Nickelate
Authors:
W. S. Lee,
Y. D. Chuang,
R. G. Moore,
Y. Zhu,
L. Patthey,
M. Trigo,
D. H. Lu,
P. S. Kirchmann,
O. Krupin,
M. Yi,
M. Langner,
N. Huse,
J. S. Robinson,
Y. Chen,
S. Y. Zhou,
G. Coslovich,
B. Huber,
D. A. Reis,
R. A. Kaindl,
R. W. Schoenlein,
D. Doering,
P. Denes,
W. F. Schlotter,
J. J. Turner,
S. L. Johnson
, et al. (10 additional authors not shown)
Abstract:
The dynamics of an order parameter's amplitude and phase determines the collective behaviour of novel states emerged in complex materials. Time- and momentum-resolved pump-probe spectroscopy, by virtue of its ability to measure material properties at atomic and electronic time scales and create excited states not accessible by the conventional means can decouple entangled degrees of freedom by vis…
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The dynamics of an order parameter's amplitude and phase determines the collective behaviour of novel states emerged in complex materials. Time- and momentum-resolved pump-probe spectroscopy, by virtue of its ability to measure material properties at atomic and electronic time scales and create excited states not accessible by the conventional means can decouple entangled degrees of freedom by visualizing their corresponding dynamics in the time domain. Here, combining time-resolved femotosecond optical and resonant x-ray diffraction measurements on striped La1.75Sr0.25NiO4, we reveal unforeseen photo-induced phase fluctuations of the charge order parameter. Such fluctuations preserve long-range order without creating topological defects, unlike thermal phase fluctuations near the critical temperature in equilibrium10. Importantly, relaxation of the phase fluctuations are found to be an order of magnitude slower than that of the order parameter's amplitude fluctuations, and thus limit charge order recovery. This discovery of new aspect to phase fluctuation provides more holistic view for the importance of phase in ordering phenomena of quantum matter.
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Submitted 25 May, 2012;
originally announced May 2012.
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Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders
Authors:
Marco Battaglia,
Devis Contarato,
Peter Denes,
Dietrich Liko,
Serena Mattiazzo,
Devis Pantano
Abstract:
This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at…
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This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders.
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Submitted 13 April, 2012;
originally announced April 2012.
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Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Serena Mattiazzo,
Devis Pantano
Abstract:
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection ef…
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This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.
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Submitted 6 February, 2012;
originally announced February 2012.
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Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation
Authors:
Marco Battaglia,
Dario Bisello,
Richard Celestre,
Devis Contarato,
Peter Denes,
Serena Mattiazzo,
Craig Tindall
Abstract:
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
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Submitted 9 November, 2011;
originally announced November 2011.
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Femtosecond dynamics of the collinear-to-spiral antiferromagnetic phase transition in CuO
Authors:
S. L. Johnson,
R. A. de Souza,
U. Staub,
P. Beaud,
E. Möhr-Vorobeva,
G. Ingold,
A. Caviezel,
V. Scagnoli,
W. F. Schlotter,
J. J. Turner,
O. Krupin,
W. -S. Lee,
Y. -D. Chuang,
L. Patthey,
R. G. Moore,
D. Lu,
M. Yi,
P. S. Kirchmann,
M. Trigo,
P. Denes,
D. Doering,
Z. Hussain,
Z. -X. Shen,
D. Prabhakaran,
A. T. Boothroyd
Abstract:
We report on the ultrafast dynamics of magnetic order in a single crystal of CuO at a temperature of 207 K in response to strong optical excitation using femtosecond resonant x-ray diffraction. In the experiment, a femtosecond laser pulse induces a sudden, nonequilibrium increase in magnetic disorder. After a short delay ranging from 400 fs to 2 ps, we observe changes in the relative intensity of…
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We report on the ultrafast dynamics of magnetic order in a single crystal of CuO at a temperature of 207 K in response to strong optical excitation using femtosecond resonant x-ray diffraction. In the experiment, a femtosecond laser pulse induces a sudden, nonequilibrium increase in magnetic disorder. After a short delay ranging from 400 fs to 2 ps, we observe changes in the relative intensity of the magnetic ordering diffraction peaks that indicate a shift from a collinear commensurate phase to a spiral incommensurate phase. These results indicate that the ultimate speed for this antiferromagnetic re-orientation transition in CuO is limited by the long-wavelength magnetic excitation connecting the two phases.
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Submitted 2 December, 2011; v1 submitted 30 June, 2011;
originally announced June 2011.
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Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Serena Mattiazzo,
Devis Pantano,
Sarah Zalusky
Abstract:
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single poi…
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This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
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Submitted 4 March, 2011;
originally announced March 2011.
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Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope
Authors:
Marco Battaglia,
Devis Contarato,
Peter Denes,
Dionisio Doering,
Thomas Duden,
Brad Krieger,
Piero Giubilato,
Dario Gnani,
Velimir Radmilovic
Abstract:
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are…
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A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.
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Submitted 13 June, 2010;
originally announced June 2010.
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Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy
Authors:
Marco Battaglia,
Devis Contarato,
Peter Denes,
Piero Giubilato
Abstract:
A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron a…
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A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron at 300 keV and of a factor of three in the image contrast, compared to traditional bright field illumination.
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Submitted 22 July, 2009;
originally announced July 2009.
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CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy
Authors:
Marco Battaglia,
Devis Contarato,
Peter Denes,
Dionisio Doering,
Velimir Radmilovic
Abstract:
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.
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Submitted 3 April, 2009;
originally announced April 2009.
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Monolithic Pixel Sensors in Deep-Submicron SOI Technology
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay Glesener,
Serena Mattiazzo,
Chinh Qu Vu
Abstract:
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched…
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Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.
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Submitted 18 March, 2009;
originally announced March 2009.
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Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay Glesener,
Serena Mattiazzo,
Chinh Vu
Abstract:
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics l…
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This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.
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Submitted 27 November, 2008;
originally announced November 2008.
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A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy
Authors:
Marco Battaglia,
Devis Contarato,
Peter Denes,
Dionisio Doering,
Piero Giubilato,
Tae Sung Kim,
Serena Mattiazzo,
Velimir Radmilovic,
Sarah Zalusky
Abstract:
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictio…
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Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation.
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Submitted 17 November, 2008;
originally announced November 2008.
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Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout
Authors:
Marco Battaglia,
Jean-Marie Bussat,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay E. Glesener
Abstract:
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for a future e+e- Linear Collider.
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for a future e+e- Linear Collider.
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Submitted 12 November, 2008;
originally announced November 2008.
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A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay E. Glesener,
Serena Mattiazzo,
Chinh Vu
Abstract:
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. T…
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A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The prototype response has been tested with infrared lasers and with the 1.35 GeV electron beam extracted from the injection booster at the LBNL Advanced Light Source. Results from irradiation tests with low energy protons and neutrons performed at the LBNL 88-inch Cyclotron are also presented.
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Submitted 30 June, 2008;
originally announced July 2008.
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Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout for the ILC
Authors:
Marco Battaglia,
Jean-Marie Bussat,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay E. Glesener
Abstract:
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider.
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider.
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Submitted 17 December, 2007;
originally announced December 2007.
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Monolithic Pixels R&D at LBNL
Authors:
Devis Contarato,
Marco Battaglia,
Jean-Marie Bussat,
Peter Denes,
Piero Giubilato,
Lindsay Glesener,
Benjamin Hooberman,
Chinh Qu Vu
Abstract:
This paper reports recent results from the ongoing R&D on monolithic pixels for the ILC Vertex Tracker at LBNL.
This paper reports recent results from the ongoing R&D on monolithic pixels for the ILC Vertex Tracker at LBNL.
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Submitted 1 October, 2007;
originally announced October 2007.
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A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
Authors:
Marco Battaglia,
Dario Bisello,
Devis Contarato,
Peter Denes,
Piero Giubilato,
Lindsay Glesener,
Chinh Vu
Abstract:
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.
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Submitted 26 September, 2007;
originally announced September 2007.
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Monolithic CMOS Pixel R&D for the ILC at LBNL
Authors:
M. Battaglia,
G. Abrams,
P. Denes,
L. C. Greiner,
B. Hooberman,
L. Tompkins,
H. H. Wieman
Abstract:
An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first semester of the R&D program are reviewed.
An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first semester of the R&D program are reviewed.
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Submitted 19 August, 2005;
originally announced August 2005.
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Beyond the CDMS-II Dark Matter Search: SuperCDMS
Authors:
P. L. Brink,
B. Cabrera,
C. L. Chang,
J. Cooley,
R. W. Ogburn,
D. S. Akerib,
C. N. Bailey,
P. P. Brusov,
M. R. Dragowsky,
D. R. Grant,
R. Hennings-Yeomans,
R. W. Schnee,
M. J. Attisha,
R. J. Gaitskell,
J-P. F. Thompson,
L. Baudis,
T. Saab,
D. A. Bauer,
M. B. Crisler,
D. Holmgren,
E. Ramberg,
J. Yoo,
R. Bunker,
D. O. Caldwell,
R. Mahapatra
, et al. (19 additional authors not shown)
Abstract:
Presently the CDMS-II collaboration's Weakly Interacting Massive Particle (WIMP) search at the Soudan Underground Laboratory sets the most stringent exclusion limits of any WIMP cold dark matter direct-detection experiment. To extend our reach further, to WIMP-nucleon cross sections in the range $10^{-46} - 10^{-44}$cm$^2$, we propose SuperCDMS, which would take advantage of a very deep site. On…
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Presently the CDMS-II collaboration's Weakly Interacting Massive Particle (WIMP) search at the Soudan Underground Laboratory sets the most stringent exclusion limits of any WIMP cold dark matter direct-detection experiment. To extend our reach further, to WIMP-nucleon cross sections in the range $10^{-46} - 10^{-44}$cm$^2$, we propose SuperCDMS, which would take advantage of a very deep site. One promising site is the recently approved SNOLab facility in Canada. In this paper we will present our overall plan, identify primary issues, and set the goals that need to be met prior to embarking upon each phase of SuperCDMS.
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Submitted 27 March, 2005;
originally announced March 2005.
