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Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities
Authors:
O. Del Pozo-Zamudio,
A. Genco,
S. Schwarz,
F. Withers,
P. M. Walker,
T. Godde,
R. C. Schofield,
A. P. Rooney,
E. Prestat,
K. Watanabe,
T. Taniguchi,
C. Clark,
S. J. Haigh,
D. N. Krizhanovskii,
K. S. Novoselov,
A. I. Tartakovskii
Abstract:
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integr…
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Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.
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Submitted 4 June, 2020; v1 submitted 15 November, 2019;
originally announced November 2019.
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Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
Authors:
Daniel Wigger,
Robert Schmidt,
Osvaldo Del Pozo-Zamudio,
Johann A. Preuß,
Philipp Tonndorf,
Robert Schneider,
Paul Steeger,
Johannes Kern,
Yashar Khodaei,
Jaroslaw Sperling,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Tilmann Kuhn
Abstract:
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling…
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Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies ranging over the entire visible spectrum, which renders the identification of the underlying atomic structure challenging. In addition to their eminent properties as quantum light emitters, the coupling to phonons is remarkable. Their photoluminescence exhibits significant side band emission well separated from the zero phonon line (ZPL) and an asymmetric broadening of the ZPL itself. In this combined theoretical and experimental study we show that the phonon side bands can be well described in terms of the coupling to bulk longitudinal optical (LO) phonons. To describe the ZPL asymmetry we show that in addition to the coupling to longitudinal acoustic (LA) phonons also the coupling to local mode oscillations of the defect center with respect to the entire host crystal has to be considered. By studying the influence of the emitter's wave function dimensions on the phonon side bands we find reasonable values for size of the wave function and the deformation potentials. We perform photoluminescence excitation measurements to demonstrate that the excitation of the emitters is most efficient by LO-phonon assisted absorption.
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Submitted 27 March, 2019;
originally announced March 2019.
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MOVPE growth, transmission electron microscopy and magneto-optical spectroscopy of individual InAsP/GaInP quantum dots
Authors:
O. Del Pozo-Zamudio,
J. Puebla,
A. B. Krysa,
R. Toro,
A. M. Sanchez,
R. Beanland,
A. I. Tartakovskii,
M. S. Skolnick,
E. A. Chekhovich
Abstract:
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. I…
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We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an As molar fraction up to x=0.12 is observed. The heavy hole g-factor is found to be strongly dependent on As molar fraction, while the electron g-factor is close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed which allows for further insight into structural properties using nuclear magnetic resonance.
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Submitted 5 May, 2017;
originally announced May 2017.
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Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization
Authors:
D. Schmidt,
T. Godde,
J. Schmutzler,
M. Aßmann,
J. Debus,
F. Withers,
E. M. Alexeev,
O. Del Pozo-Zamudio,
O. V. Skrypka,
K. S. Novoselov,
M. Bayer,
A. I. Tartakovskii
Abstract:
We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also…
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We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied with strong changes in PL including suppression of the trion PL and decrease of the trion PL life-time, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and appearance of a pronounced slow PL decay component. In MoSe2 and WSe2 studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at T~10K. The observed behavior is a result of a complex interplay between influences of the specific energy ordering of bright and dark excitons in MoSe2 and WSe2, sample do**, trion and exciton localization and various temperature-dependent non-radiative processes.
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Submitted 13 August, 2016;
originally announced August 2016.
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WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
Authors:
F. Withers,
O. Del Pozo-Zamudio,
S. Schwarz,
S. Dufferwiel,
P. M. Walker,
T. Godde,
A. P. Rooney,
A. Gholinia,
C. R. Woods,
P. Blake,
S. J. Haigh,
K. Watanabe,
T. Taniguchi,
I. L. Aleiner,
A. K. Geim,
V. I. Falko,
A. I. Tartakovskii,
K. S. Novoselov
Abstract:
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext…
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Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.
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Submitted 19 November, 2015;
originally announced November 2015.
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Photoluminescence and Raman investigation of stability of InSe and GaSe thin films
Authors:
O. Del Pozo-Zamudio,
S. Schwarz,
J. Klein,
R. C. Schofield,
E. A. Chekhovich,
O. Ceylan,
E. Margapoti,
A. I. Dmitriev,
G. V. Lashkarev,
D. N. Borisenko,
N. N. Kolesnikov,
J. J. Finley,
A. I. Tartakovskii
Abstract:
Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when…
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Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.
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Submitted 18 June, 2015;
originally announced June 2015.
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Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities
Authors:
S. Dufferwiel,
S. Schwarz,
F. Withers,
A. A. P. Trichet,
F. Li,
M. Sich,
O. Del Pozo-Zamudio,
C. Clark,
A. Nalitov,
D. D. Solnyshkov,
G. Malpuech,
K. S. Novoselov,
J. M. Smith,
M. S. Skolnick,
D. N. Krizhanovskii,
A. I. Tartakovskii
Abstract:
Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microc…
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Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised.
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Submitted 17 May, 2015;
originally announced May 2015.
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Optical properties of two-dimensional gallium chalcogenide films
Authors:
O. Del Pozo-Zamudio,
S. Schwarz,
M. Sich,
I. A. Akimov,
M. Bayer,
R. C. Schofield,
E. A. Chekhovich,
B. J. Robinson,
N. D. Kay,
O. V. Kolosov,
A. I. Dmitriev,
G. V. Lashkarev,
D. N. Borisenko,
N. N. Kolesnikov,
A. I. Tartakovskii
Abstract:
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we p…
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Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
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Submitted 17 March, 2015; v1 submitted 9 January, 2015;
originally announced January 2015.
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Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
Authors:
F. Withers,
O. Del Pozo-Zamudio,
A. Mishchenko,
A. P. Rooney,
A. Gholinia,
K. Watanabe,
T. Taniguchi,
S. J. Haigh,
A. K. Geim,
A. I. Tartakovskii,
K. S. Novoselov
Abstract:
The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waal…
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The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality.
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Submitted 24 December, 2014;
originally announced December 2014.
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Optical investigation of the natural electron do** in thin MoS2 films deposited on dielectric substrates
Authors:
D. Sercombe,
S. Schwarz,
O. Del Pozo-Zamudio,
F. Liu,
B. J. Robinson,
E. A. Chekhovich,
I. I. Tartakovskii,
O. Kolosov,
A. I. Tartakovskii
Abstract:
Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment…
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Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional cap** of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.
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Submitted 21 January, 2014; v1 submitted 26 April, 2013;
originally announced April 2013.
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III-V quantum light source and cavity-QED on Silicon
Authors:
Isaac J. Luxmoore,
Romain Toro,
Osvaldo Del Pozo-Zamudio,
Nicholas A. Wasley,
Evgeny A. Chekhovich,
Ana M. Sanchez,
Richard Beanland,
A. Mark Fox,
Maurice S. Skolnick,
Huiyun Y. Liu,
Alexander I. Tartakovskii
Abstract:
Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sour…
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Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.
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Submitted 22 November, 2012;
originally announced November 2012.
